Showing 1–50 of 213 results for author: Hwang, J

Directional Thermal Emission Across Both Polarizations in Planar Photonic Architectures

Authors: David E. Abraham, Daniel Cui, Baolai Liang, Jae S. Hwang, Parthiban Santhanam, Linus Kim, Rayen Lin, Aaswath P. Raman

Abstract: Directional and spectral control of thermal emission is essential for applications in energy conversion, imaging, and sensing. Existing planar, lithography-free epsilon-near-zero (ENZ) films only support transverse-magnetic (TM) control of thermal emission via the Berreman mode and cannot address transverse-electric (TE) waves due to the absence of natural optical magnetism over optical and infrar… ▽ More Directional and spectral control of thermal emission is essential for applications in energy conversion, imaging, and sensing. Existing planar, lithography-free epsilon-near-zero (ENZ) films only support transverse-magnetic (TM) control of thermal emission via the Berreman mode and cannot address transverse-electric (TE) waves due to the absence of natural optical magnetism over optical and infrared wavelengths Here, we introduce a hyperbolic metamaterial comprising alternating layers of degenerately-doped and intrinsic InAs that exhibits an epsilon-and-mu-near-zero (EMNZ) response, enabling dual-polarized, directionally and spectrally selective thermal emission. We first theoretically demonstrate that a mu-near-zero (MNZ) film on a perfect magnetic conductor supports a magnetic Berreman mode, absorbing TE-polarized radiation in analogy to the conventional Berreman mode supported in TM polarization. Using genetic and gradient-descent optimization, we design a dual-polarized emitter with independently tunable spectral peaks and emission angles. Parameter retrieval via homogenization confirms simultaneous EMNZ points at the target wavelengths and angles. Finally, experimental measurement of a sample fabricated via molecular beam epitaxy exhibits high absorptivity peaks for both polarizations in close agreement with simulations. This work realizes lithography-free, dual-polarized, spectrally and directionally selective emitters, offering a versatile platform for advanced infrared thermal management and device integration. △ Less

Submitted 6 May, 2025; originally announced May 2025.

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films

Authors: Chenxi Hu, Abdul Mukit, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Kathleen Kash, Hongping Zhao

Abstract: Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV nitride closely lattice matched to GaN and AlN has a band gap suitable for photonic applications in the UV-C wavelength region. MgSiN2 is also a promising candi… ▽ More Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV nitride closely lattice matched to GaN and AlN has a band gap suitable for photonic applications in the UV-C wavelength region. MgSiN2 is also a promising candidate to exhibit ferroelectricity, which has only been observed in very few nitride materials. This study builds on our previous work on the metal-organic chemical vapor deposition (MOCVD) of MgSiN2 thin films grown on GaN-on-sapphire and c-plane sapphire substrates by exploring higher growth temperature windows, resulting in higher crystalline quality and improved interfaces. Correlations between the growth conditions (Mg:Si precursor molar flow rate ratio, reactor pressure, and growth temperatures from 900C to 960C) and the resultant film quality are investigated for films grown on GaN-on-sapphire. High-resolution transmission electron microscopy (HR-TEM) reveals high-quality orthorhombic single-crystal MgSiN2, confirming successful epitaxial growth on GaN. Optical transmittance measurements indicate the direct band gap is 6.34-6.36 eV and indirect band gap is 5.77-5.81 eV, affirming the realization of an ultrawide-band gap II-IV nitride semiconductor that is structurally compatible with existing III-nitride device platforms. △ Less

Submitted 1 April, 2025; originally announced April 2025.

Comments: 28 pages, 3 tables, 10 figures

Revealing Actual Viscoelastic Relaxation Times in Capillary Breakup

Authors: Nan Hu, Jonghyun Hwang, Tachin Ruangkriengsin, Howard A. Stone

Abstract: We use experiments and theory to elucidate the size effect in capillary breakup rheometry, where pre-stretching in the visco-capillary stage causes the apparent relaxation time to be consistently smaller than the actual value. We propose a method accounting for both the experimental size and the finite extensibility of polymers to extract the actual relaxation time. A phase diagram characterizes t… ▽ More We use experiments and theory to elucidate the size effect in capillary breakup rheometry, where pre-stretching in the visco-capillary stage causes the apparent relaxation time to be consistently smaller than the actual value. We propose a method accounting for both the experimental size and the finite extensibility of polymers to extract the actual relaxation time. A phase diagram characterizes the expected measurement variability and delineates scaling law conditions. The results refine capillary breakup rheometry for viscoelastic fluids and advance the understanding of breakup dynamics across scales. △ Less

Submitted 22 March, 2025; v1 submitted 7 March, 2025; originally announced March 2025.

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

Authors: Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Ilteris K. Turan, Nichole Hoven, Walter R. L. Lambrecht, Jinwoo Hwang, Yumi Ijiri, Hongping Zhao, Kathleen Kash

Abstract: MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energ… ▽ More MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive X-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 +- 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the band gap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Comments: submitted to APL Materials

Metal-organic chemical vapor deposition of MgSiN$_{2}$ thin films

Authors: Vijay Gopal Thirupakuzi Vangipuram, Chenxi Hu, Abdul Mukit Majumder, Christopher Chae, Kaitian Zhang, Jinwoo Hwang, Kathleen Kash, Hongping Zhao

Abstract: Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN$_{2}$ stands out due to its close compatibility with GaN and AlN and its theoretically predicted ultrawide direct band gap of 6.28 eV. In this work, the growth of… ▽ More Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN$_{2}$ stands out due to its close compatibility with GaN and AlN and its theoretically predicted ultrawide direct band gap of 6.28 eV. In this work, the growth of MgSiN$_{2}$ thin films on GaN-on-sapphire and c-plane sapphire substrates was investigated using metal-organic chemical vapor deposition (MOCVD). MOCVD growth conditions were correlated with film quality and crystallinity for samples grown on GaN-on-sapphire substrates. The effects of Mg:Si precursor molar flow rate ratios and growth pressure at two different temperatures, 745$^{\circ}$C and 850$^{\circ}$C, were studied comprehensively. High-resolution scanning transmission electron microscopy (STEM) imaging confirmed the formation of high-quality, single-crystal MgSiN$_{2}$ films. Optical band gap extraction from transmittance measurements yielded direct band gap values ranging from 6.13 eV to 6.27 eV for samples grown under various conditions, confirming the realization of an ultrawide-band gap, III-nitride-compatible, II-IV-nitride material. △ Less

Submitted 24 February, 2025; originally announced February 2025.

Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

Authors: Philip Y. Mai, Pedro H. Pereira, Lucas Andrade Alonso, Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Daniel Dunmore, Julien Camirand Lemyre, Tuomo Tanttu, Wister Huang, Kok Wai Chan, Kuan Yen Tan, Jesús D. Cifuentes, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Christopher C. Escott, MengKe Feng, Reinaldo de Melo e Souza, Andrew Dzurak, Andre Saraiva

Abstract: Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipo… ▽ More Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies. △ Less

Submitted 3 February, 2025; v1 submitted 2 February, 2025; originally announced February 2025.

Comments: Main: 5 pages, 4 figures Supp: 4 pages

Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs

Authors: A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu, Sushovan Dhara, Hsien-Lien Huang, Vijay Gopal Thirupakuzi Vangipuram, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao

Abstract: This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.… ▽ More This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.5 V) were observed, with breakdown fields of 5.01 MV/cm in Al$_2$O$_3$ and 4.11 MV/cm in $β$-Ga$_2$O$_3$. At 650$^\circ$C, higher hysteresis ($\sim$3.44 V) and lower reverse breakdown voltage (38.8 V) were observed, with breakdown fields of 3.69 MV/cm in Al$_2$O$_3$ and 2.87 MV/cm in $β$-Ga$_2$O$_3$. However, forward breakdown fields improved from 5.62 MV/cm (900$^\circ$C) to 7.25 MV/cm (650$^\circ$C). STEM revealed improved crystallinity and sharper interfaces at 900$^\circ$C, enhancing reverse breakdown performance. For Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs, increasing Al composition ($x$ = 5.5\% to 9.2\%) reduced carrier concentration and improved reverse breakdown fields from 2.55 to 2.90 MV/cm in $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ and 2.41 to 3.13 MV/cm in Al$_2$O$_3$. Forward breakdown fields in Al$_2$O$_3$ improved from 5.0 to 5.4 MV/cm as Al composition increased. STEM confirmed compositional homogeneity and excellent stoichiometry of Al$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ layers. These findings highlight the robust electrical performance, high breakdown fields, and structural quality of Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs for high-power applications. △ Less

Submitted 22 May, 2025; v1 submitted 17 January, 2025; originally announced January 2025.

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Authors: Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan, Gabriel Calderon Ortiz, Ahmed Ibreljic, Jinwoo Hwang, A F M Anhar Uddin Bhuiyan

Abstract: In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose… ▽ More In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose gamma irradiation on the structural and superconducting properties of NbN films grown on GaN via reactive DC magnetron sputtering. The as-deposited cubic δ-NbN (111) films exhibited a high-intensity XRD peak, high Tc of 12.82K, and an atomically flat surface. Annealing at 500 and 950 °C for varying durations revealed notable structural and surface changes. High-resolution STEM indicated improved local ordering, while AFM showed reduced surface roughness after annealing. XPS revealed a gradual increase in the Nb/N ratio with higher annealing temperatures and durations. High-resolution XRD and STEM analyses showed lattice constant modifications in δ-NbN films, attributed to residual stress changes following annealing. Additionally, XRD phi-scans revealed sixfold symmetry in NbN films due to rotational domains relative to GaN. While Tc remained stable after annealing at 500 °C, increasing the annealing temperature to 950 °C degraded Tc to ~8K and reduced the residual resistivity ratio from 0.85 in as-deposited films to 0.29 after 30 minutes. The effects of gamma radiation (5 Mrad (Si)) were also studied, demonstrating minimal changes to crystallinity and superconducting performance, indicating excellent radiation resilience. These findings highlight the potential of NbN superconductors for integration into advanced quantum devices and their suitability for applications in radiation-intensive environments such as space, satellites, and nuclear power plants. △ Less

Submitted 28 May, 2025; v1 submitted 13 January, 2025; originally announced January 2025.

Journal ref: J. Vac. Sci. Technol. A 43, 042701 (2025)

Dynamic realization of emergent high-dimensional optical vortices

Authors: Dongha Kim, Geonhyeong Park, Yun-Seok Choi, Arthur Baucour, Jisung Hwang, Sanghyeok Park, Hee Seong Yun, Jonghwa Shin, Haiwen Wang, Shanhui Fan, Dong Ki Yoon, Min-Kyo Seo

Abstract: The dimensionality of vortical structures has recently been extended beyond two dimensions, providing higher-order topological characteristics and robustness for high-capacity information processing and turbulence control. The generation of high-dimensional vortical structures has mostly been demonstrated in classical systems through the complex interference of fluidic, acoustic, or electromagneti… ▽ More The dimensionality of vortical structures has recently been extended beyond two dimensions, providing higher-order topological characteristics and robustness for high-capacity information processing and turbulence control. The generation of high-dimensional vortical structures has mostly been demonstrated in classical systems through the complex interference of fluidic, acoustic, or electromagnetic waves. However, natural materials rarely support three- or higher-dimensional vortical structures and their physical interactions. Here, we present a high-dimensional gradient thickness optical cavity (GTOC) in which the optical coupling of planar metal-dielectric multilayers implements topological interactions across multiple dimensions. Topological interactions in high-dimensional GTOC construct non-trivial topological phases, which induce high-dimensional vortical structures in generalized parameter space in three, four dimensions, and beyond. These emergent high-dimensional vortical structures are observed under electro-optic tomography as optical vortex dynamics in two-dimensional real-space, employing the optical thicknesses of the dielectric layers as synthetic dimensions. We experimentally demonstrate emergent vortical structures, optical vortex lines and vortex rings, in a three-dimensional generalized parameter space and their topological transitions. Furthermore, we explore four-dimensional vortical structures, termed optical vortex sheets, which provide the programmability of real-space optical vortex dynamics. Our findings hold significant promise for emulating high-dimensional physics and developing active topological photonic devices. △ Less

Submitted 2 January, 2025; originally announced January 2025.

Comments: 21 pages,5 figures

Nano-confinement induced nucleation of ice-VII at room temperature

Authors: Jonggeun Hwang, Dongha Shin, Brendan T. Deveney, Manhee Lee, Xingcai Zhang, Wonho Jhe

Abstract: The hydrogen bond (HB) network of water under confinement has been predicted to have distinct structures from that of bulk water. However, direct measurement of the structure has not been achieved. Here, we present experimental evidence of confinement-induced ice formation in water. We directly probe the HB network of a water nano-meniscus formed and confined between a mica substrate and a precise… ▽ More The hydrogen bond (HB) network of water under confinement has been predicted to have distinct structures from that of bulk water. However, direct measurement of the structure has not been achieved. Here, we present experimental evidence of confinement-induced ice formation in water. We directly probe the HB network of a water nano-meniscus formed and confined between a mica substrate and a precisely-controlled-plasmonically active silver tip. By employing tip-enhanced Raman spectroscopy (TERS), we observe a novel double donor-double acceptor (DDAA) peak that emerges in the OH stretching band of water molecules at room temperature and at sub-nanometer confinement. This Raman peak indicates the presence of a solid phase of water, namely ice-VII with the body-centered cubic (bcc) unit. Interestingly, we observe a structural transition from bcc DDAA (ice-VII) to tetrahedral DDAA as the confinement is weakened. Moreover, by identifying the spatial distribution of the HB network, we find that the bcc DDAA network of ice-VII is predominantly present within the interior of the confined water, rather than at air/water or at solid/water interfaces. This suggest the possibility that the appearance of ice-VII in the strongly confined space could be a general characteristic of water under extreme confinement. △ Less

Submitted 19 November, 2024; originally announced November 2024.

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN

Authors: Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with deg… ▽ More We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with degenerate doping and proper interfacial engineering considering bandgap-narrowing-induced band offset between channel and contact layer. This represents orders-of-magnitude of lower contact resistivity than that obtained in similar MOCVD-grown structures. A detailed, layer-by-layer analysis of the reverse graded contact and TCAD simulation of the bandgap narrowing effect highlighted that the reverse graded contact layer itself is extremely conductive and interfacial resistance due to bandgap-narrowing-induced barrier between contact and channel dominates the contact resistance. △ Less

Submitted 15 November, 2024; originally announced November 2024.

Hidden dormant phase mediating the glass transition in disordered matter

Authors: Eunyoung Park, Sinwoo Kim, Melody M. Wang, Junha Hwang, Sung Yun Lee, Jaeyong Shin, Seung-Phil Heo, Jungchan Choi, Heemin Lee, Dogeun Jang, Minseok Kim, Kyung Sook Kim, Sangsoo Kim, Intae Eom, Daewoong Nam, X. Wendy Gu, Changyong Song

Abstract: Metallic glass is a frozen liquid with structural disorder that retains degenerate free energy without spontaneous symmetry breaking to become a solid. For over half a century, this puzzling structure has raised fundamental questions about how structural disorder impacts glass-liquid phase transition kinetics, which remain elusive without direct evidence. In this study, through single-pulse, time-… ▽ More Metallic glass is a frozen liquid with structural disorder that retains degenerate free energy without spontaneous symmetry breaking to become a solid. For over half a century, this puzzling structure has raised fundamental questions about how structural disorder impacts glass-liquid phase transition kinetics, which remain elusive without direct evidence. In this study, through single-pulse, time-resolved imaging using X-ray free-electron lasers, we visualized the glass-to-liquid transition, revealing a previously hidden dormant phase that does not involve any macroscopic volume change within the crossover regime between the two phases. Although macroscopically inactive, nanoscale redistribution occurs, forming channeld low-density bands within this dormant phase that drives the glass transition. By providing direct microscopic evidence, this work presents a new perspective on the phase transition process in disordered materials, which can be extended to various liquid and solid phases in other complex systems. △ Less

Submitted 4 November, 2024; originally announced November 2024.

Comments: 25 pages, 4 figures

Surface Furrowing Instability in Everting Soft Solids

Authors: Jonghyun Hwang, Mariana Altomare, Howard A. Stone

Abstract: We report a surface instability observed during the extrusion of extremely soft elastic solids in confined geometries. Due to their unique rheological properties, these soft solids can migrate through narrow gaps by continuously everting the bulk material. The extrusion front spontaneously buckles in the direction transverse to the flow, resulting in a furrow-like morphology that deepens over time… ▽ More We report a surface instability observed during the extrusion of extremely soft elastic solids in confined geometries. Due to their unique rheological properties, these soft solids can migrate through narrow gaps by continuously everting the bulk material. The extrusion front spontaneously buckles in the direction transverse to the flow, resulting in a furrow-like morphology that deepens over time. We characterize the distinct features of this instability using experiments and theory and contrast the results with known elastic surface instabilities. Our study may provide insights into various processes involving the extrusion-like deformations of soft solids, including biomaterials. △ Less

Submitted 2 January, 2025; v1 submitted 18 October, 2024; originally announced October 2024.

Journal ref: Phys. Rev. Lett. 134, (2025) 058205

Photoinduced surface plasmon control of ultrafast melting modes in Au nanorods

Authors: Eunyoung Park, Chulho Jung, Junha Hwang, Jaeyong Shin, Sung Yun Lee, Heemin Lee, Seung Phil Heo, Daewoong Nam, Sangsoo Kim, Min Seok Kim, Kyung Sook Kim, In Tae Eom, Do Young Noh, Changyong Song

Abstract: Photoinduced ultrafast phenomena in materials exhibiting nonequilibrium behavior can lead to the emergence of exotic phases beyond the limits of thermodynamics, presenting opportunities for femtosecond photoexcitation. Despite extensive research, the ability to actively control quantum materials remains elusive owing to the lack of clear evidence demonstrating the explicit control of phase-changin… ▽ More Photoinduced ultrafast phenomena in materials exhibiting nonequilibrium behavior can lead to the emergence of exotic phases beyond the limits of thermodynamics, presenting opportunities for femtosecond photoexcitation. Despite extensive research, the ability to actively control quantum materials remains elusive owing to the lack of clear evidence demonstrating the explicit control of phase-changing kinetics through light-matter interactions. To address this drawback, we leveraged single-pulse time-resolved X-ray imaging of Au nanorods undergoing photoinduced melting to showcase control over the solid-to-liquid transition process through the use of localized surface plasmons. Our study uncovers transverse or longitudinal melting processes accompanied by characteristic oscillatory distortions at different laser intensities. Numerical simulations confirm that the localized surface plasmons, excited by polarized laser fields, dictate the melting modes through anharmonic lattice deformations. These results provide direct evidence of photoinduced surface plasmon-mediated ultrafast control of matter, establishing a foundation for the customization of material kinetics using femtosecond laser fields. △ Less

Submitted 24 September, 2024; originally announced September 2024.

Comments: 17 pages, 3 figures

Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

Authors: Ji-Eun Lee, Aifeng Wang, Shuzhang Chen, Minseong Kwon, Jinwoong Hwang, Minhyun Cho, Ki-Hoon Son, Dong-Soo Han, Jun Woo Choi, Young Duck Kim, Sung-Kwan Mo, Cedomir Petrovic, Choongyu Hwang, Se Young Park, Chaun Jang, Hyejin Ryu

Abstract: The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLH… ▽ More The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds. △ Less

Submitted 21 August, 2024; originally announced August 2024.

Journal ref: Nature Communications 15, 3971 (2024)

Modified Dirac fermions in the crystalline xenon and graphene Moiré heterostructure

Authors: Hayoon Im, Suji Im, Kyoo Kim, Ji-Eun Lee, Jinwoong Hwang, Sung-Kwan Mo, Choongyu Hwang

Abstract: The interface between two-dimensional (2D) crystals often forms a Moire superstructure that imposes a new periodicity, which is a key element in realizing complex electronic phases as evidenced in twisted bilayer graphene. A combined angle resolved photoemission spectroscopy measurements and first-principles calculations reveal the formation of a Moire superstructure between a 2D Dirac semi-metall… ▽ More The interface between two-dimensional (2D) crystals often forms a Moire superstructure that imposes a new periodicity, which is a key element in realizing complex electronic phases as evidenced in twisted bilayer graphene. A combined angle resolved photoemission spectroscopy measurements and first-principles calculations reveal the formation of a Moire superstructure between a 2D Dirac semi-metallic crystal, graphene, and a 2D insulating crystal of noble gas, xenon. Incommensurate diffraction pattern and folded Dirac cones around the Brillouin zone center imply the formation of hexagonal crystalline array of xenon atoms. The velocity of Dirac fermions increases upon the formation of the 2D xenon crystal on top of graphene due to the enhanced dielectric screening by the xenon over-layer. These findings not only provide a novel method to produce a Moire superstructure from the adsorption of noble gas on 2D materials, but also to control the physical properties of graphene by the formation of a graphene-noble gas interface. △ Less

Submitted 27 July, 2024; originally announced July 2024.

Comments: 15 pages, 4 figures

Journal ref: Advance Physics Research 2, 2200091 (2023)

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Authors: Hyobeom Lee, Hayoon Im, Byoung Ki Choi, Kyoungree Park, Yi Chen, Wei Ruan, Yong Zhong, Ji-Eun Lee, Hyejin Ryu, Michael F. Crommie, Zhi-Xun Shen, Choongyu Hwang, Sung-Kwan Mo, Jinwoong Hwang

Abstract: Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a contr… ▽ More Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties. △ Less

Submitted 27 July, 2024; originally announced July 2024.

Comments: 23 pages, 4 figures

Journal ref: Nano Convergence 11, 14 (2024)

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Authors: Manisha Muduli, Yongkang Xia, Seunghyun Lee, Nathan Gajowski, Chris Chae, Siddharth Rajan, Jinwoo Hwang, Shamsul Arafin, Sanjay Krishna

Abstract: There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer prin… ▽ More There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface. △ Less

Submitted 26 July, 2024; v1 submitted 24 July, 2024; originally announced July 2024.

Comments: 14 pages, 5 figures, Pages 15-16 supplementary information

Long-lived magnetization in an atomic spin chain tuned to a diabolic point

Authors: R. J. G. Elbertse, D. Borodin, J. Oh, T. Ahn, J. Hwang, J. C. Rietveld, A. J. Heinrich, F. Delgado, S. Otte, Y. Bae

Abstract: Scaling magnets down to where quantum size effects become prominent triggers quantum tunneling of magnetization (QTM), profoundly influencing magnetization dynamics. Measuring magnetization switching in an Fe atomic chain under a carefully tuned transverse magnetic field, we observe a non-monotonic variation of magnetization lifetimes around a level crossing, known as the diabolic point (DP). Near… ▽ More Scaling magnets down to where quantum size effects become prominent triggers quantum tunneling of magnetization (QTM), profoundly influencing magnetization dynamics. Measuring magnetization switching in an Fe atomic chain under a carefully tuned transverse magnetic field, we observe a non-monotonic variation of magnetization lifetimes around a level crossing, known as the diabolic point (DP). Near DPs, local environment effects causing QTM are efficiently suppressed, enhancing lifetimes by three orders of magnitude. Adjusting interatomic interactions further facilitates multiple DPs. Our study provides a deeper understanding of quantum dynamics near DPs and enhances our ability to engineer a quantum magnet. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Comments: Main text and Supplementary

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

Authors: Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Linus Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna

Abstract: The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they… ▽ More The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies. △ Less

Submitted 24 June, 2024; v1 submitted 20 June, 2024; originally announced June 2024.

Comments: 14 pages, 6 figures

Frustrated phonon with charge density wave in vanadium Kagome metal

Authors: Seung-Phil Heo, Choongjae Won, Heemin Lee, Hanbyul Kim, Eunyoung Park, Sung Yun Lee, Junha Hwang, Hyeongi Choi, Sang-Youn Park, Byungjune Lee, Woo-Suk Noh, Hoyoung Jang, Jae-Hoon Park, Dongbin Shin, Changyong Song

Abstract: The formation of a star of David CDW superstructure, resulting from the coordinated displacements of vanadium ions on a corner sharing triangular lattice, has garnered significant attention to comprehend the influence of electron phonon interaction within geometrically intricate lattice of Kagome metals, specifically AV3Sb5 (where A represents K, Rb, or Cs). However, understanding of the underlyin… ▽ More The formation of a star of David CDW superstructure, resulting from the coordinated displacements of vanadium ions on a corner sharing triangular lattice, has garnered significant attention to comprehend the influence of electron phonon interaction within geometrically intricate lattice of Kagome metals, specifically AV3Sb5 (where A represents K, Rb, or Cs). However, understanding of the underlying mechanism behind CDW formation, coupled with symmetry protected lattice vibrations, remains elusive. Here, from femtosecond time resolved X ray scattering experiments, we reveal that the phonon mode, associated with Cs ions out-of-plane motion, becomes frustrated in the CDW phase. Furthermore, we observed the photoinduced emergence of a metastable CDW phase, facilitated by alleviating the frustration. By not only elucidating the longstanding puzzle surrounding the intervention of phonons but introducing the phononic frustration, this research offers fresh insights into the competition between phonons and periodic lattice distortions, a phenomenon widespread in other correlated quantum materials including layered high TC superconductors. △ Less

Submitted 5 March, 2025; v1 submitted 10 June, 2024; originally announced June 2024.

Comments: Manuscript: 23 pages, 4 figures, SI: 17 pages, 11 figures

Journal ref: Nat. Commun. 16, 4861 (2025)

Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from Strain-induced Spin-State Transition

Authors: Menglin Zhu, Joseph Lanier, Sevim Polat Genlik, Jose G. Flores, Victor da Cruz Pinha Barbosa, Mohit Randeria, Patrick M. Woodward, Maryam Ghazisaeidi, Fengyuan Yang, Jinwoo Hwang

Abstract: Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the characterization and understanding of atomic structure as well as electronic, magnetic, and orbital degrees of freedom at the interface. Here, we report a novel i… ▽ More Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the characterization and understanding of atomic structure as well as electronic, magnetic, and orbital degrees of freedom at the interface. Here, we report a novel interfacial insulating ferromagnetic order in antiferromagnetic LaFeO3 grown on SrTiO3, characterized by a combination of electron microscopy and spectroscopy, magnetometry, and density functional theory. The epitaxial strain drives a spin-state disproportionation in the interfacial layer of LaFeO3, which leads to a checkerboard arrangement of low- and high-spin Fe3+ ions inside smaller and larger FeO6 octahedra, respectively. Ferromagnetism at the interface arises from superexchange interactions between the low- and high-spin Fe3+. The detailed understanding of creation of emergent magnetism illustrates the potential of designing and controlling orbital degrees of freedom at the interface to realize novel phases and functionalities for future spin-electronic applications. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Authors: I-Hsuan Kao, Junyu Tang, Gabriel Calderon Ortiz, Menglin Zhu, Sean Yuan, Rahul Rao, Jiahan Li, James H. Edgar, Jiaqiang Yan, David G. Mandrus, Kenji Watanabe, Takashi Taniguchi, Jinwoo Hwang, Ran Cheng, Jyoti Katoch, Simranjeet Singh

Abstract: Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and ma… ▽ More Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies. △ Less

Submitted 17 May, 2024; originally announced May 2024.

Strain-dependent Insulating State and Kondo Effect in Epitaxial SrIrO$_{3}$ Films

Authors: Gaurab Rimal, Tanzila Tasnim, Gabriel Calderon Ortiz, George E. Sterbinsky, Jinwoo Hwang, Ryan B. Comes

Abstract: The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavio… ▽ More The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO$_3$ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films. △ Less

Submitted 16 April, 2024; originally announced April 2024.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. Materials 8, L071201 (2024)

An inversion problem for optical spectrum data via physics-guided machine learning

Authors: Hwiwoo Park, Jun H. Park, Jungseek Hwang

Abstract: We propose the regularized recurrent inference machine (rRIM), a novel machine-learning approach to solve the challenging problem of deriving the pairing glue function from measured optical spectra. The rRIM incorporates physical principles into both training and inference and affords noise robustness, flexibility with out-of-distribution data, and reduced data requirements. It effectively obtains… ▽ More We propose the regularized recurrent inference machine (rRIM), a novel machine-learning approach to solve the challenging problem of deriving the pairing glue function from measured optical spectra. The rRIM incorporates physical principles into both training and inference and affords noise robustness, flexibility with out-of-distribution data, and reduced data requirements. It effectively obtains reliable pairing glue functions from experimental optical spectra and yields promising solutions for similar inverse problems of the Fredholm integral equation of the first kind. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 19 pages, 4 figures

Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$

Authors: Ji-Eun Lee, Shaohua Yan, Sehoon Oh, Jinwoong Hwang, Jonathan D. Denlinger, Choongyu Hwang, Hechang Lei, Sung-Kwan Mo, Se Young Park, Hyejin Ryu

Abstract: Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy an… ▽ More Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($\textit{J}$$_{ex}$) and magnetic anisotropy energy to the development of the high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 25 pages, 4 figures

Journal ref: Nano Lett. 23 (2023) 11526-11532

Experimentally informed structure optimization of amorphous TiO2 films grown by atomic layer deposition

Authors: Jun Meng, Mehrdad Abbasi, Yutao Dong, Corey Carlosa, Xudong Wang, Jinwoo Hwang, Dane Morgan

Abstract: Amorphous titanium dioxide TiO2 (a-TiO2) has been widely studied, particularly as a protective coating layer on semiconductors to prevent corrosion and promote electron-hole conduction in photoelectrochemical reactions. The stability and longevity of a-TiO2 is strongly affected by the thickness and structural heterogeneity, implying that understanding the structure properties of a-TiO2 is crucial… ▽ More Amorphous titanium dioxide TiO2 (a-TiO2) has been widely studied, particularly as a protective coating layer on semiconductors to prevent corrosion and promote electron-hole conduction in photoelectrochemical reactions. The stability and longevity of a-TiO2 is strongly affected by the thickness and structural heterogeneity, implying that understanding the structure properties of a-TiO2 is crucial for improving the performance. This study characterized the structural and electronic properties of a-TiO2 thin films (~17nm) grown on Si by Atomic Layer Deposition (ALD). Fluctuation spectra V(k) and angular correlation functions were determined with 4-dimensional scanning transmission electron microscopy (4D-STEM), which revealed the distinctive medium-range ordering in the a-TiO2 film. A realistic atomic model of a-TiO2 was established guided by the medium-range ordering and the previously reported short-range ordering of a-TiO2 film, as well as the interatomic potential. The structure was optimized by the StructOpt code using a genetic algorithm that simultaneously minimizes energy and maximizes match to experimental short- and medium-range ordering. The StructOpt a-TiO2 model presents an improved agreements with the medium-range ordering and the k-space location of the dominant 2-fold angular correlations compared with a traditional melt-quenched model. The electronic structure of the StructOpt a-TiO2 model was studied by ab initio calculation and compared to the crystalline phases and experimental results. This work uncovered the medium-range ordering in a-TiO2 thin film and provided a realistic a-TiO2 structure model for further investigation of structure-property relationships and materials design. In addition, the improved multi-objective optimization package StructOpt was provided for structure determination of complex materials guided by experiments and simulations. △ Less

Submitted 15 January, 2024; originally announced January 2024.

Comments: 11 pages, 8 figures, submitted to Nanoscale

Journal ref: Nanoscale, 2023, 15, 718

NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature

Authors: Kingsley Egbo, Emily M. Garrity, William A. Callahan, Chris Chae, Cheng-Wei Lee, Brooks Tellekamp, Jinwoo Hwang, Vladan Stevanovic, Andriy Zakutayev

Abstract: NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at… ▽ More NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at $550^{\circ}$C. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO-Ga$_{2}$O$_{3}$ interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO-Ga$_{2}$O$_{3}$ interface forms ternary compounds at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa$_{2}$O$_{4}$ layer between NiO and Ga$_{2}$O$_{3}$. First-principles defect calculations find that NiGa$_{2}$O$_{4}$ shows low p-type intrinsic doping, and hence can also serve to limit electric field crowding at the interface. Vertical NiO/Ga$_{2}$O$_{3}$ diodes with intentionally grown 5 nm thin spinel-type NiGa$_{2}$O$_{4}$ interfacial layers show excellent device ON/OFF ratio of > 10$^{10}$($\pm$3 V), V$_{ON}$ of ~1.9 V, and breakdown voltage of ~ 1.2 kV for an initial unoptimized 300-micron diameter device. These p-n heterojunction diodes are promising for high-voltage, high-temperature applications. △ Less

Submitted 12 January, 2024; originally announced January 2024.

Comments: 16 pages, 5 figures

From Stoner to Local Moment Magnetism in Atomically Thin Cr2Te3

Authors: Yong Zhong, Cheng Peng, Haili Huang, Dandan Guan, Jinwoong Hwang, Kuan H. Hsu, Yi Hu, Chunjing Jia, Brian Moritz, Donghui Lu, Jun-Sik Lee, Jin-Feng Jia, Thomas P. Devereaux, Sung-Kwan Mo, Zhi-Xun Shen

Abstract: The field of two-dimensional (2D) ferromagnetism has been proliferating over the past few years, with ongoing interests in basic science and potential applications in spintronic technology. However, a high-resolution spectroscopic study of the 2D ferromagnet is still lacking due to the small size and air sensitivity of the exfoliated nanoflakes. Here, we report a thickness-dependent ferromagnetism… ▽ More The field of two-dimensional (2D) ferromagnetism has been proliferating over the past few years, with ongoing interests in basic science and potential applications in spintronic technology. However, a high-resolution spectroscopic study of the 2D ferromagnet is still lacking due to the small size and air sensitivity of the exfoliated nanoflakes. Here, we report a thickness-dependent ferromagnetism in epitaxially grown Cr2Te3 thin films and investigate the evolution of the underlying electronic structure by synergistic angle-resolved photoemission spectroscopy, scanning tunneling microscopy, x-ray absorption spectroscopy, and first-principle calculations. A conspicuous ferromagnetic transition from Stoner to Heisenberg-type is directly observed in the atomically thin limit, indicating that dimensionality is a powerful tuning knob to manipulate the novel properties of 2D magnetism. Monolayer Cr2Te3 retains robust ferromagnetism, but with a suppressed Curie temperature, due to the drastic drop in the density of states near the Fermi level. Our results establish atomically thin Cr2Te3 as an excellent platform to explore the dual nature of localized and itinerant ferromagnetism in 2D magnets. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Comments: 32 pages, 4 + 10 figures

Journal ref: Nature Communications 14, 5340 (2023)

Electrically Driven Spin Resonance of 4f Electrons in a Single Atom on a Surface

Authors: Stefano Reale, Jiyoon Hwang, Jeongmin Oh, Harald Brune, Andreas J. Heinrich, Fabio Donati, Yujeong Bae

Abstract: A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to this dilemma if provided with a rational design for manipulation and detection. Here we construct tailored spin structures to perform electron spin resonance on… ▽ More A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to this dilemma if provided with a rational design for manipulation and detection. Here we construct tailored spin structures to perform electron spin resonance on a single lanthanide atom using a scanning tunneling microscope. A magnetically coupled structure made of an erbium and a titanium atom enables us to both drive the erbium's 4f electron spins and indirectly probe them through the titanium's 3d electrons. In this coupled configuration, the erbium spin states exhibit a five-fold increase in the spin relaxation time and a two-fold increase in the driving efficiency compared to the 3d electron counterparts. Our work provides a new approach to accessing highly protected spin states, enabling their coherent control in an all-electric fashion. △ Less

Submitted 26 September, 2023; v1 submitted 5 September, 2023; originally announced September 2023.

Comments: Version 2: revised text and figures, updated reference list, notations and figures

Doping-dependent superconducting physical quantities of K-doped BaFe$_2$As$_2$ obtained through infrared spectroscopy

Authors: Seokbae Lee, Yu-Seong Seo, Seulki Roh, Dongjoon Song, Hiroshi Eisaki, Jungseek Hwang

Abstract: We investigated four single crystals of K-doped BaFe$_2$As$_2$ (Ba-122), Ba$_{1-x}$K$_x$Fe$_2$As$_2$ with $x$ = 0.29, 0.36, 0.40, and 0.51, using infrared spectroscopy. We explored a wide variety of doping levels, from under- to overdoped. We obtained the superfluid plasma frequencies ($Ω_{\mathrm{sp}}$) and corresponding London penetration depths ($λ_{\mathrm{L}}$) from the measured optical condu… ▽ More We investigated four single crystals of K-doped BaFe$_2$As$_2$ (Ba-122), Ba$_{1-x}$K$_x$Fe$_2$As$_2$ with $x$ = 0.29, 0.36, 0.40, and 0.51, using infrared spectroscopy. We explored a wide variety of doping levels, from under- to overdoped. We obtained the superfluid plasma frequencies ($Ω_{\mathrm{sp}}$) and corresponding London penetration depths ($λ_{\mathrm{L}}$) from the measured optical conductivity spectra. We also extracted the electron-boson spectral density (EBSD) functions using a two-parallel charge transport channel approach in the superconducting (SC) state. From the extracted EBSD functions, the maximum SC transition temperatures ($T_c^{\mathrm{Max}}$) were determined using a generalized McMillan formula and the SC coherence lengths ($ξ_{\mathrm{SC}}$) were calculated using the timescales encoded in the EBSD functions and reported Fermi velocities. We identified some similarities and differences in the doping-dependent SC quantities between the K-doped Ba-122 and the hole-doped cuprates. We expect that the various SC quantities obtained across the wide doping range will provide helpful information for establishing the microscopic pairing mechanism in Fe-pnictide superconductors. △ Less

Submitted 13 August, 2023; originally announced August 2023.

Comments: 16 pages, 4 figures, 1 table

Journal ref: Scientific Reports 12, 19950 (2022)

Bosonic spectrum of a correlated multiband system, BaFe1.80Co0.20As2, obtained via infrared spectroscopy

Authors: Chandan Kumar Panda, Hong Gu Lee, Hwiwoo Park, Soon-Gil Jung, Ki-Young Choi, Jungseek Hwang

Abstract: We investigated a single crystal BaFe(2-x)CoxAs2 (Co-doped BaFe2As2: Co-doped Ba122) with x = 0.20 using infrared spectroscopy. We obtained the bosonic spectrum from the measured spectrum using an extended Drude-Lorentz model for the normal state and a two-parallel-channel approach for the superconducting (SC) state, based on the generalized Allen formula. The coupling constant, maximum SC transit… ▽ More We investigated a single crystal BaFe(2-x)CoxAs2 (Co-doped BaFe2As2: Co-doped Ba122) with x = 0.20 using infrared spectroscopy. We obtained the bosonic spectrum from the measured spectrum using an extended Drude-Lorentz model for the normal state and a two-parallel-channel approach for the superconducting (SC) state, based on the generalized Allen formula. The coupling constant, maximum SC transition temperature, SC coherence length, and upper critical field were extracted from the bosonic spectrum. The superfluid plasma frequency and the London penetration depth were obtained from the optical conductivity. We compared the physical quantities of Co-doped Ba122 and K-doped Ba122 and found some interesting differences. Our results may be helpful for understanding superconductivity in doped Ba122 systems and may provide useful information on doped Ba122 systems for their applications. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Comments: 18 pages, 6 figures

Journal ref: Results in Physics 50, 106572 (2023)

Planckian behavior of cuprates at the pseudogap critical point simulated via flat electron-boson spectral density

Authors: Hwiwoo Park, Jun H. Park, Jungseek Hwang

Abstract: Planckian behavior has been recently observed in La1.76Sr0.24CuO4 at the pseudogap critical point. The Planckian behavior takes place in an intriguing quantum metallic state at a quantum critical point. Here, the Planckian behavior was simulated with an energy-independent (or flat) and weakly temperature-dependent electron-boson spectral density (EBSD) function by using a generalized Allen's (Shul… ▽ More Planckian behavior has been recently observed in La1.76Sr0.24CuO4 at the pseudogap critical point. The Planckian behavior takes place in an intriguing quantum metallic state at a quantum critical point. Here, the Planckian behavior was simulated with an energy-independent (or flat) and weakly temperature-dependent electron-boson spectral density (EBSD) function by using a generalized Allen's (Shulga's) formula. We obtained various optical quantities from the flat EBSD function, such as the optical scattering rate, the optical effective mass, and the optical conductivity. These quantities are well fitted with the recently observed Planckian behavior. Fermi-liquid behavior was also simulated with an energy-linear and temperature-independent EBSD function. The EBSD functions agree well with the overall doping- and temperature-dependent trends of the EBSD function obtained from the optically measured spectra of cuprate systems, which can be crucial for understanding the microscopic electron-pairing mechanism for high-Tc superconductivity in cuprates. △ Less

Submitted 4 April, 2024; v1 submitted 9 August, 2023; originally announced August 2023.

Comments: 19 pages, 5 figures

Journal ref: Heliyon 10, e28056 (2024)

Fermi liquid-like behaviour of cuprates in the pseudogap phase simulated via T-dependent electron-boson spectral density

Authors: Hwiwoo Park, Jungseek Hwang

Abstract: We investigated the temperature- and frequency-dependent optical scattering rates in the pseudogap phase of cuprates using model pseudogap and electron-boson spectral density (EBSD) functions. We obtained the scattering rates at various temperatures below and above a given pseudogap temperature using a generalized Allen's (or Sharapov's) formula, which has been used to analyse the measured optical… ▽ More We investigated the temperature- and frequency-dependent optical scattering rates in the pseudogap phase of cuprates using model pseudogap and electron-boson spectral density (EBSD) functions. We obtained the scattering rates at various temperatures below and above a given pseudogap temperature using a generalized Allen's (or Sharapov's) formula, which has been used to analyse the measured optical spectra of correlated electron systems with a non-constant density of states at finite temperatures. The pseudogap and EBSD functions should be temperature dependent to simulate the Fermi liquid-like behaviour of underdoped cuprate systems observed in optical studies. Therefore, the observed Fermi liquid-like behaviour can be understood by considering the combined contribution from the T-dependent EBSD function and the T-dependent pseudogap. We also obtained the optical conductivity spectra from the optical scattering rates and analyzed them to investigate intriguing electronic properties. We expect that our results will aid in understanding the Fermi liquid-like optical response in the pseudogap phase and in revealing the microscopic pairing mechanism for superconductivity in cuprates. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Comments: 22 pages, 8 figures

Journal ref: Scientific Reports 13, 2527 (2023)

Emergence of flat bands and ferromagnetic fluctuations via orbital-selective electron correlations in Mn-based kagome metal

Authors: Subhasis Samanta, Hwiwoo Park, Chanhyeon Lee, Sungmin Jeon, Hengbo Cui, Yong-Xin Yao, Jungseek Hwang, Kwang-Yong Choi, Heung-Sik Kim

Abstract: Kagome lattice has been actively studied for the possible realization of frustration-induced two-dimensional flat bands and a number of correlation-induced phases. Currently, the search for kagome systems with a nearly dispersionless flat band close to the Fermi level is ongoing. Here, by combining theoretical and experimental tools, we present Sc$_3$Mn$_3$Al$_7$Si$_5$ as a novel realization of co… ▽ More Kagome lattice has been actively studied for the possible realization of frustration-induced two-dimensional flat bands and a number of correlation-induced phases. Currently, the search for kagome systems with a nearly dispersionless flat band close to the Fermi level is ongoing. Here, by combining theoretical and experimental tools, we present Sc$_3$Mn$_3$Al$_7$Si$_5$ as a novel realization of correlation-induced almost-flat bands in the kagome lattice in the vicinity of the Fermi level. Our magnetic susceptibility, $^{27}$Al nuclear magnetic resonance, transport, and optical conductivity measurements provide signatures of a correlated metallic phase with tantalizing ferromagnetic instability. Our dynamical mean-field calculations suggest that such ferromagnetic instability observed originates from the formation of nearly flat dispersions close to the Fermi level, where electron correlations induce strong orbital-selective renormalization and manifestation of the kagome-frustrated bands. In addition, a significant negative magnetoresistance signal is observed, which can be attributed to the suppression of flat-band-induced ferromagnetic fluctuation, which further supports the formation of flat bands in this compound. These findings broaden a new prospect to harness correlated topological phases via multiorbital correlations in 3$d$-based kagome systems. △ Less

Submitted 25 June, 2024; v1 submitted 10 April, 2023; originally announced April 2023.

Comments: 14 pages, 7 figures

Journal ref: Nat. Commun. 15, 5376 (2024)

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Authors: J. Casamento, K. Nomoto, T. S. Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. C. M. Hwang, H. G. Xing, D. Jena

Abstract: We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high… ▽ More We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 4 pages, 8 figures, appeared in IEEE IEDM, December 2022

Journal ref: IEEE IEDM Technical Digest, December 2022

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Authors: A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao

Abstract: Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction (XRD). The asymmetrical… ▽ More Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction (XRD). The asymmetrical reciprocal space mapping confirms the growth of coherent \b{eta}-(AlxGa1-x)2O3 films (x < 25%) on (001) \b{eta}-Ga2O3 substrates. While the films show smooth surface morphologies, the alloy inhomogeneity with local segregation of Al along (-201) plane is observed from atomic resolution STEM imaging, resulting in wavy and inhomogeneous interfaces in \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 superlattice structure. Room temperature Raman spectra of \b{eta}-(AlxGa1-x)2O3 films show similar characteristics peaks as (001) \b{eta}-Ga2O3 substrate without obvious Raman shifts for films with different Al compositions. Atom probe tomography (APT) was used to investigate the atomic level structural chemistry with increasing Al content in the \b{eta}-(AlxGa1-x)2O3 films. A monotonous increase in chemical heterogeneity is observed from the in-plane Al/Ga distributions which was further confirmed via statistical frequency distribution analysis (FDA). Although the films exhibit alloy fluctuations, n-type doping with good electrical properties are demonstrated for films with various Al compositions. The determined valence and conduction band offsets at \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 heterojunctions using x-ray photoelectron spectroscopy (XPS) reveal the formation of type-II (staggered) band alignment. △ Less

Submitted 11 January, 2025; v1 submitted 25 January, 2023; originally announced January 2023.

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$

Authors: Qile Li, Iolanda Di Bernardo, Johnathon Maniatis, Daniel McEwen, Liam Watson, Benjamin Lowe, Thi-Hai-Yen Vu, Chi Xuan Trang, Jinwoong Hwang, Sung-Kwan Mo, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stab… ▽ More Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realising QAH effect at higher temperatures. Here we use a scanning tunnelling microscope to directly map the size of the exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi$_2$Te$_4$. We observe long-range fluctuations of Eg,ex with values ranging between 0 (gapless) and 70 meV, uncorrelated to individual point defects. We directly image the breakdown of topological protection, showing that the chiral edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless metallic regions in the bulk. Finally, we unambiguously demonstrate that the gapless regions originate in magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. Our results indicate that overcoming magnetic disorder is key to exploiting the unique properties of QAH insulators. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Metal to Mott Insulator Transition in Two-dimensional 1T-TaSe$_2$

Authors: Ning Tian, Zhe Huang, Bo Gyu Jang, Shuaifei Guo, Ya-Jun Yan, Jingjing Gao, Yijun Yu, Jinwoong Hwang, Meixiao Wang, Xuan Luo, Yu Ping Sun, Zhongkai Liu, Dong-Lai Feng, Xianhui Chen, Sung-Kwan Mo, Minjae Kim, Young-Woo Son, Dawei Shen, Wei Ruan, Yuanbo Zhang

Abstract: When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional superconductivity, represent a major research frontier and a constant source of inspiration. Central to strongly correlated physics is the concept of Mott insul… ▽ More When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional superconductivity, represent a major research frontier and a constant source of inspiration. Central to strongly correlated physics is the concept of Mott insulator, from which various other correlated phases derive. The advent of two-dimensional (2D) materials brings unprecedented opportunities to the study of strongly correlated physics in the 2D limit. In particular, the enhanced correlation and extreme tunability of 2D materials enables exploring strongly correlated systems across uncharted parameter space. Here, we discover an intriguing metal to Mott insulator transition in 1T-TaSe$_2$ as the material is thinned down to atomic thicknesses. Specifically, we discover, for the first time, that the bulk metallicity of 1T-TaSe$_2$ arises from a band crossing Fermi level. Reducing the dimensionality effectively quenches the kinetic energy of the initially itinerant electrons and drives the material into a Mott insulating state. The dimensionality-driven Metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1T-TaSe$_2$. Our results additionally establish 1T-TaSe$_2$ as an ideal variable system for exploring various strongly correlated phenomena. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs

Authors: Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi

Abstract: Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O… ▽ More Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches. △ Less

Submitted 21 February, 2023; v1 submitted 13 October, 2022; originally announced October 2022.

Comments: 17 pages, 9 figures

A novel $\sqrt{19}\times\sqrt{19}$ superstructure in epitaxially grown 1T-TaTe$_2$

Authors: Jinwoong Hwang, Yeongrok Jin, Canxun Zhang, Tiancong Zhu, Kyoo Kim, Yong Zhong, Ji-Eun Lee, Zongqi Shen, Yi Chen, Wei Ruan, Hyejin Ryu, Choongyu Hwang, Jaekwang Lee, Michael F. Crommie, Sung-Kwan Mo, Zhi-Xun Shen

Abstract: The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe me… ▽ More The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the $\sqrt{19}\times\sqrt{19}$ order persists in 1T-TaTe$_2$ films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Journal ref: Advanced materials 34, 2204579 (2022)

Development of a Scanning Tunneling Microscope for Variable Temperature Electron Spin Resonance

Authors: Jiyoon Hwang, Denis Krylov, Robertus J. G. Elbertse, Sangwon Yoon, Taehong Ahn, Jeongmin Oh, Lei Fang, Won-jun Jang, Franklin H. Cho, Andreas J. Heinrich, Yujeong Bae

Abstract: Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet.… ▽ More Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet. Our STM design allows for the deposition of atoms and molecules directly into the cold STM, eliminating the need to extract the sample for deposition. In addition, we adopt two methods to apply radio-frequency (RF) voltages to the tunnel junction, the early design of wiring to the STM tip directly, and a more recent idea to use an RF antenna. Direct comparisons of ESR results measured using the two methods and simulations of electric field distribution around the tunnel junction show that, despite their different designs and capacitive couplings to the tunnel junction, there is no discernible difference in the driving and detection of ESR. Furthermore, at a magnetic field of 1.6 T, we observe ESR signals (near 40 GHz) sustained up to 10 K, which is the highest temperature for ESR-STM measurement reported to date, to the best of our knowledge. Although the ESR intensity exponentially decreases with increasing temperature, our ESR-STM system with low noise at the tunnel junction allows us to measure weak ESR signals with intensities in the sub-fA range. Our new design of ESR-STM, which is operational in a large frequency and temperature range, can broaden the use of ESR spectroscopy in STM and enable the simple modification of existing STM systems, which will hopefully accelerate a generalized use of ESR-STM. △ Less

Submitted 23 August, 2022; originally announced August 2022.

In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films

Authors: A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao

Abstract: The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanni… ▽ More The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanning transmission electron microscopy (HR-STEM) imaging, which indicate the growth of high quality amorphous Al$_2$O$_3$ dielectrics with abrupt interfaces on (010), (100) and (-201) oriented $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The surface stoichiometries of Al$_2$O$_3$ deposited on all orientations of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al$_2$O$_3$ dielectrics. The evolution of band offsets at both in-situ MOCVD and ex-situ ALD deposited Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ interfaces for (010) and (100) orientations, whereas type I band alignments with relatively lower conduction band offsets are observed along (-201) orientation. Results from this work revealed that the in-situ MOCVD deposited high quality Al$_2$O$_3$ dielectrics with sharp interfaces can be considered as a viable alternative of commonly used ex-situ deposited (ALD) Al$_2$O$_3$ for developing high performance $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ based devices. △ Less

Submitted 11 January, 2025; v1 submitted 26 July, 2022; originally announced July 2022.

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Authors: A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao

Abstract: Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on… ▽ More Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment. △ Less

Submitted 11 January, 2025; v1 submitted 25 July, 2022; originally announced July 2022.

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Authors: Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Kuan Qiao, Ki Seok Kim, Bo-In Park, Junseok Jeong, Menglin Zhu, Jun Min Suh, Yongmin Baek, You Jin Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Haozhe Wang, Lingping Kong, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, Jinwoo Hwang , et al. (4 additional authors not shown)

Abstract: Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to… ▽ More Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Large-gap insulating dimer ground state in monolayer IrTe2

Authors: Jinwoong Hwang, Kyoo Kim, Canxun Zhang, Tiancong Zhu, Charlotte Herbig, Sooran Kim, Bongjae Kim, Yong Zhong, Mohamed Salah, Mohamed M. El-Desoky, Choongyu Hwang, Zhi-Xun Shen, Michael F. Crommie, Sung-Kwan Mo

Abstract: Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 x 1 dimer ground state in m… ▽ More Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 x 1 dimer ground state in monolayer 1T-IrTe2 that has a large band gap in contrast to the metallic bilayer-to-bulk forms of this material. First-principles calculations reveal that phonon and charge instabilities as well as local bond formation collectively enhance and stabilize a charge-ordered ground state. Our findings provide important insights into the subtle balance of interactions having similar energy scales that occurs in the absence of strong interlayer coupling, which offers new opportunities to engineer the properties of 2D monolayers. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Journal ref: Nature communications 13, 906 (2022)

Electron-hole symmetry in quasiparticle spectral weight of cuprates observed via infrared and photoemission spectroscopy

Authors: Myounghoon Lee, Dongjoon Song, Yu-Seong Seo, Seulki Roh, Seokbae Lee, Hirosh Eisaki, Jungseek Hwang

Abstract: We performed an optical spectroscopy study on single crystals of Pr$_{0.85}$LaCe$_{0.15}$CuO$_{4-δ}$ (PLCCO) to revisit the electron-hole asymmetry, which has been understood as a fundamental property of cuprates. Four differently annealed samples - as-grown, reduced, optimally oxygenated, and over-oxygenated samples - were prepared, which have superconducting transition temperatures, $T_c$ = 0, 1… ▽ More We performed an optical spectroscopy study on single crystals of Pr$_{0.85}$LaCe$_{0.15}$CuO$_{4-δ}$ (PLCCO) to revisit the electron-hole asymmetry, which has been understood as a fundamental property of cuprates. Four differently annealed samples - as-grown, reduced, optimally oxygenated, and over-oxygenated samples - were prepared, which have superconducting transition temperatures, $T_c$ = 0, 15, 24, and 18 K, respectively. We observed that low-energy quasiparticle spectral weights of all the PLCCO samples are significantly small in comparison with those of other electron-doped cuprate families. Instead, they are rather close to those of hole-doped counterpart La$_{2-x}$Sr$_x$CuO$_4$ (LSCO). Accordingly, estimated effective carrier numbers per Cu atom ($N_{\mathrm{eff}}$/Cu) of superconducting samples are also considerably small, despite their relatively high critical temperatures. Complementary photoemission study reveals that the low-energy quasiparticle spectral weight of PLCCO is much smaller than that of Nd$_{1.85}$Ce$_{0.15}$CuO$_{4-δ}$ (NCCO), consistent with the optical results. Our observations demonstrate that PLCCO provides the electron-hole symmetry in quasiparticle spectral weight, and highlight the importance of Cu3$d$-O2$p$ hybridization to understand the low-energy spectral weight transfer in doped cuprates. △ Less

Submitted 14 March, 2022; originally announced March 2022.

Comments: 17 pages, 4 figures

Evidence for a spinon Kondo effect in cobalt atoms on single-layer 1T-TaSe$_2$

Authors: Yi Chen, Wen-Yu He, Wei Ruan, Jinwoong Hwang, Shujie Tang, Ryan L. Lee, Meng Wu, Tiancong Zhu, Canxun Zhang, Hyejin Ryu, Feng Wang, Steven G. Louie, Zhi-Xun Shen, Sung-Kwan Mo, Patrick A. Lee, Michael F. Crommie

Abstract: Quantum spin liquids (QSLs) are highly entangled, disordered magnetic states that arise in frustrated Mott insulators and host exotic fractional excitations such as spinons and chargons. Despite being charge insulators some QSLs are predicted to exhibit gapless itinerant spinons that yield metallic behavior in the spin channel. We have deposited isolated magnetic atoms onto single-layer (SL) 1T-Ta… ▽ More Quantum spin liquids (QSLs) are highly entangled, disordered magnetic states that arise in frustrated Mott insulators and host exotic fractional excitations such as spinons and chargons. Despite being charge insulators some QSLs are predicted to exhibit gapless itinerant spinons that yield metallic behavior in the spin channel. We have deposited isolated magnetic atoms onto single-layer (SL) 1T-TaSe$_2$, a gapless QSL candidate, to experimentally probe how itinerant spinons couple to impurity spin centers. Using scanning tunneling spectroscopy we observe the emergence of new, impurity-induced resonance peaks at the 1T-TaSe$_2$ Hubbard band edges when cobalt adatoms are positioned to have maximal spatial overlap with the Hubbard band charge distribution. These resonance peaks disappear when the spatial overlap is reduced or when the magnetic impurities are replaced with non-magnetic impurities. Theoretical simulations using a modified Anderson impurity model integrated with a gapless quantum spin liquid show that these resonance peaks are consistent with a Kondo resonance induced by spinons combined with spinon-chargon binding effects that arise due to QSL gauge-field fluctuations. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Journal ref: Nature Physics 18, 1335 (2022)

Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films

Authors: Wenyi Zhou, Alexander J. Bishop, Menglin Zhu, Igor Lyalin, Robert C. Walko, Jay A. Gupta, Jinwoo Hwang, Roland K. Kawakami

Abstract: We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning… ▽ More We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Comments: 18 pages, 4 figures

Journal ref: ACS Appl. Electron. Mater. 4, 3190 (2022)

Evidences for the exciton gas phase and its condensation in monolayer 1T-ZrTe2

Authors: Yekai Song, Chunjing Jia, Hongyu Xiong, Binbin Wang, Zhicheng Jiang, Kui Huang, Jinwoong Hwang, Zhuojun Li, Choongyu Hwang, Zhongkai Liu, Dawei Shen, Jonathan Sobota, Patrick Kirchmann, Jiamin Xue, Thomas P. Devereaux, Sung-Kwan Mo, Zhi-Xun Shen, Shujie Tang

Abstract: The excitonic insulator (EI) is a Bose-Einstein condensation (BEC) of excitons bound by electron-hole interaction in a solid, which could support high-temperature BEC transition. The material realization of EI has been elusive, which is further challenged by the difficulty of distinguishing it from a conventional charge density wave (CDW) state. In the BEC limit, the pre-condensation exciton gas p… ▽ More The excitonic insulator (EI) is a Bose-Einstein condensation (BEC) of excitons bound by electron-hole interaction in a solid, which could support high-temperature BEC transition. The material realization of EI has been elusive, which is further challenged by the difficulty of distinguishing it from a conventional charge density wave (CDW) state. In the BEC limit, the pre-condensation exciton gas phase is a hallmark to distinguish EI from conventional CDW, yet direct experimental evidence has been lacking. Here we report a distinct correlated phase beyond the $2\times2$ CDW ground state emerging in epitaxially grown monolayer 1T-ZrTe2 and its investigation by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The results show novel band- and energy-dependent folding behavior in a two-step process, evidenced by an exciton gas phase prior to its condensation into the final CDW state. The excellent agreement between experiments and theoretical predictions on the recovery of the pristine band structure by carrier-density-dependent suppression of the CDW state further corroborates the monolayer 1T-ZrTe2 as an EI. Our findings provide a versatile two-dimensional platform that allows tuning of the excitonic effect. △ Less

Submitted 30 March, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 22 pages, 4 figures