Stable Aqueous Dispersions of Optically and Electronically Active Phosphorene
Authors:
Joohoon Kang,
Spencer A. Wells,
Joshua D. Wood,
Jae-Hyeok Lee,
Xiaolong Liu,
Christopher R. Ryder,
Jian Zhu,
Jeffrey R. Guest,
Chad A. Husko,
Mark C. Hersam
Abstract:
Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limit…
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Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limited exfoliation yield and flake size distribution. Here, we present an alternative phosphorene production method based on surfactant-assisted exfoliation and post-processing of black phosphorus in deoxygenated water. From comprehensive microscopic and spectroscopic analysis, this approach is shown to yield phosphorene dispersions that are stable, highly concentrated, and comparable to micromechanically exfoliated phosphorene in structure and chemistry. Due to the high exfoliation efficiency of this process, the resulting phosphorene flakes are thinner than anhydrous organic solvent dispersions, thus allowing the observation of layer-dependent photoluminescence down to the monolayer limit. Furthermore, to demonstrate preservation of electronic properties following solution processing, the aqueous-exfoliated phosphorene flakes are employed in field-effect transistors with high drive currents and current modulation ratios. Overall, this method enables the isolation and mass production of few-layer phosphorene, which will accelerate ongoing efforts to realize a diverse range of phosphorene-based applications.
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Submitted 19 April, 2016;
originally announced April 2016.
Digital resonance tuning of high-Q/Vm silicon photonic crystal nanocavities by atomic layer deposition
Authors:
Xiaodong Yang,
Charlton J. Chen,
Chad A. Husko,
Chee Wei Wong
Abstract:
We propose and demonstrate the digital resonance tuning of high-Q/Vm silicon photonic crystal nanocavities using a self-limiting atomic layer deposition technique. Control of resonances in discrete steps of 122 +/- 18 pm per hafnium oxide atomic layer is achieved through this post-fabrication process, nearly linear over a full 17 nm tuning range. The cavity Q is maintained in this perturbative p…
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We propose and demonstrate the digital resonance tuning of high-Q/Vm silicon photonic crystal nanocavities using a self-limiting atomic layer deposition technique. Control of resonances in discrete steps of 122 +/- 18 pm per hafnium oxide atomic layer is achieved through this post-fabrication process, nearly linear over a full 17 nm tuning range. The cavity Q is maintained in this perturbative process, and can reach up to its initial values of 49,000 or more. Our results are highly controllable, applicable to many material systems, and particularly critical to matching resonances and transitions involving mesoscopic optical cavities.
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Submitted 16 September, 2007; v1 submitted 16 July, 2007;
originally announced July 2007.
