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Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
Authors:
Alla Chikina,
Dennis V. Christensen,
Vladislav Borisov,
Marius-Adrian Husanu,
Yunzhong Chen,
Xiaoqiang Wang,
Thorsten Schmitt,
Milan Radovic,
Naoto Nagaosa,
Andrey S. Mishchenko,
Roser Valentí,
Nini Pryds,
Vladimir N. Strocov
Abstract:
Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the…
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Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite/perovskite LaAlO3/SrTiO3. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top STO layer. This rearrangement of the mobile electron system pushes the electron density away from the interface that reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. The band-order engineering exploiting the fundamental symmetry properties emerges as another route to boost the performance of oxide devices.
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Submitted 1 April, 2021;
originally announced April 2021.
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Electron-polaron dichotomy of charge carriers in perovskite oxides
Authors:
Marius-Adrian Husanu,
Lorenzo Vistoli,
Carla Verdi,
Anke Sander,
Vincent Garcia,
Julien Rault,
Federico Bisti,
Leonid L. Lev,
Thorsten Schmitt,
Feliciano Giustino,
Andrey S. Mishchenko,
Manuel Bibes,
Vladimir N. Strocov
Abstract:
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,…
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Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.
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Submitted 15 April, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO$_3$/SrTiO$_3$ interfaces
Authors:
V. N. Strocov,
M. -A. Husanu,
A. Chikina,
L. L. Lev,
V. A. Rogalev,
T. Schmitt,
F. Lechermann
Abstract:
Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At thi…
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Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At this temperature the oxygen out-diffusion is suppressed, and the VOs are expected to appear mostly in the top STO layer. However, we observe a pronounced three-dimensional (3D) character of the X-ray generated MES in our samples, indicating its large extension into the STO depth, which contrasts to the purely two-dimensional (2D) character of the MES in standard stoichiometric LAO/STO samples. Based on self-interaction-corrected DFT calculations of the MES induced by VOs at the interface and in STO bulk, we discuss possible mechanisms of this puzzling three-dimensionality. They may involve VOs remnant in the deeper STO layers, photoconductivity-induced metallic states as well as more exotic mechanisms such as X-ray induced formation of Frenkel pairs.
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Submitted 23 September, 2021; v1 submitted 9 September, 2019;
originally announced September 2019.
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Electronic phase separation at LaAlO3/SrTiO3 interfaces tunable by oxygen deficiency
Authors:
V. N. Strocov,
A. Chikina,
M. Caputo,
M. -A. Husanu,
F. Bisti,
D. Bracher,
T. Schmitt,
F. Miletto Granozio,
C. A. F. Vaz,
F. Lechermann
Abstract:
Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation all…
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Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation allow access to fundamental electronic structure characteristics (momentum-resolved spectral function, dispersions and ordering of energy bands, Fermi surface) of buried interfaces. Our experiment uses X-ray irradiation of the LAO/STO interface to tune its oxygen deficiency, building up a dichotomic system where mobile weakly correlated Ti t2g-electrons co-exist with localized strongly correlated Ti eg-ones. The ARPES spectra dynamics under X-ray irradiation shows a gradual intensity increase under constant Luttinger count of the Fermi surface. This fact identifies electronic phase separation (EPS) where the mobile electrons accumulate in conducting puddles with fixed electronic structure embedded in an insulating host phase, and allows us to estimate the lateral fraction of these puddles. We discuss the physics of EPS invoking a theoretical picture of oxygen-vacancy clustering, promoted by the magnetism of the localized Ti eg-electrons, and repelling of the mobile t2g-electrons from these clusters. Our results on the irradiation-tuned EPS elucidate the intrinsic one taking place at the stoichiometric LAO/STO interfaces.
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Submitted 17 August, 2019;
originally announced August 2019.
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k-Resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES
Authors:
V. N. Strocov,
L. L. Lev,
M. Kobayashi,
C. Cancellieri,
M. -A. Husanu,
A. Chikina,
N. B. M. Schröter,
X. Wang,
J. A. Krieger,
Z. Salman
Abstract:
Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission.…
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Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the heart of current and future electronics. These applications are illustrated here with a few pioneering results, including buried quantum-well states in semiconductor and oxide heterostructures, their bosonic coupling critically affecting electron transport, magnetic impurities in diluted magnetic semiconductors and topological materials, etc. High photon flux and detection efficiency are crucial for pushing the SX-ARPES experiment to these most photon-hungry cases.
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Submitted 26 June, 2019;
originally announced June 2019.
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Electronic structure of a graphene-like artificial crystal of $NdNiO_3$
Authors:
Arian Arab,
Xiaoran Liu,
O. Köksal,
W. Yang,
R. U. Chandrasena,
S. Middey,
M. Kareev,
S. Kumar,
M. -A. Husanu,
Z. Yang,
L. Gu,
V. N. Strocov,
T. -L. Lee,
J. Minár,
R. Pentcheva,
J. Chakhalian,
A. X. Gray
Abstract:
Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an imme…
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Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
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Submitted 27 May, 2019;
originally announced May 2019.
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Do topology and ferromagnetism cooperate at the EuS/Bi$_2$Se$_3$ interface?
Authors:
J. A. Krieger,
Y. Ou,
M. Caputo,
A. Chikina,
M. Döbeli,
M. -A. Husanu,
I. Keren,
T. Prokscha,
A. Suter,
C. -Z. Chang,
J. S. Moodera,
V. N. Strocov,
Z. Salman
Abstract:
We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer…
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We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer and cause a complete depolarization of the muons. However, in both Bi$_2$Se$_3$ and titanium we measure similar local magnetic fields, implying that their origin is mostly independent of the topological properties of the interface electronic states. In addition, we use resonant soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) to probe the electronic band structure at the interface between EuS and Bi$_2$Se$_3$. By tuning the photon energy to the Eu anti-resonance at the Eu $M_5$ pre-edge we are able to detect the Bi$_2$Se$_3$ conduction band, through a protective Al$_2$O$_3$ capping layer and the EuS layer. Moreover, we observe a signature of an interface-induced modification of the buried Bi$_2$Se$_3$ wave functions and/or the presence of interface states.
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Submitted 31 January, 2019;
originally announced January 2019.
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Probing single unit-cell resolved electronic structure modulations in oxide superlattices with standing-wave photoemission
Authors:
W. Yang,
R. U. Chandrasena,
M. Gu,
R. M. S. dos Reis,
E. J. Moon,
Arian Arab,
M. -A. Husanu,
J. Ciston,
V. N. Strocov,
J. M. Rondinelli,
S. J. May,
A. X. Gray
Abstract:
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomen…
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Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy, in conjunction with scanning transmission electron microscopy, to probe the depth-dependent and single-unit-cell resolved electronic structure of an isovalent manganite superlattice [Eu0.7Sr0.3MnO3/La0.7Sr0.3MnO3]x15 wherein the electronic-structural properties are intentionally modulated with depth via engineered oxygen octahedra rotations/tilts and A-site displacements. Our unit-cell resolved measurements reveal significant transformations in the local chemical and electronic valence-band states, which are consistent with the layer-resolved first-principles theoretical calculations, thus opening the door for future depth-resolved studies of a wide variety of hetero-engineered material systems.
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Submitted 11 January, 2019;
originally announced January 2019.
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k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
Authors:
L. L. Lev,
I. O. Maiboroda,
M. -A. Husanu,
E. S. Grichuk,
N. K. Chumakov,
I. S. Ezubchenko,
I. A. Chernykh,
X. Wang,
B. Tobler,
T. Schmitt,
M. L. Zanaveskin,
V. G. Valeyev,
V. N. Strocov
Abstract:
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D elect…
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Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic structure is accessed with angle-resolved photoelectron spectroscopy whose probing depth is pushed to a few nm using soft-X-ray synchrotron radiation. The experiment yields direct k-space images of the electronic structure fundamentals of this system: the Fermi surface, band dispersions and occupancy, and the Fourier composition of wavefunctions encoded in the k-dependent photoemission intensity. We discover significant planar anisotropy of the electron Fermi surface and effective mass connected with relaxation of the interfacial atomic positions, which translates into non-linear (high-field) transport properties of the GaN/AlGaN heterostructures as an anisotropy of the saturation drift velocity of the 2D electrons.
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Submitted 6 May, 2018; v1 submitted 24 April, 2018;
originally announced April 2018.
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Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators
Authors:
Jonas A. Krieger,
Cui-Zu Chang,
Marius-Adrian Husanu,
Daria Sostina,
Arthur Ernst,
Mikhail M. Otrokov,
Thomas Prokscha,
Thorsten Schmitt,
Andreas Suter,
Maia Garcia Vergniory,
Evgueni V. Chulkov,
Jagadeesh S. Moodera,
Vladimir N. Strocov,
Zaher Salman
Abstract:
We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16. The observed magnetic transi…
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We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.
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Submitted 28 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Dimensionality-driven metal-insulator-transition in spin-orbit coupled SrIrO$_3$
Authors:
P. Schütz,
D. Di Sante,
L. Dudy,
J. Gabel,
M. Stübinger,
M. Kamp,
Y. Huang,
M. Capone,
M. -A. Husanu,
V. Strocov,
G. Sangiovanni,
M. Sing,
R. Claessen
Abstract:
Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, a…
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Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr$_2$IrO$_4$ opens new avenues to unconventional superconductivity by "clean" electron doping through electric field gating.
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Submitted 29 June, 2017;
originally announced June 2017.
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Double Band Inversion in $ α$-Sn: Appearance of Topological Surface States and the Role of Orbital Composition
Authors:
Victor A. Rogalev,
Tomáš Rauch,
Markus R. Scholz,
Felix Reis,
Lenart Dudy,
Andrzej Fleszar,
Marius-Adrian Husanu,
Vladimir N. Strocov,
Jürgen Henk,
Ingrid Mertig,
Jörg Schäfer,
Ralph Claessen
Abstract:
The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of t…
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The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of this state, which is a surface resonance, is confirmed by unravelling the band inversion and by calculating the topological invariants. In agreement with experiment, electronic structure calculations show the maximum density of states in the subsurface region, while the already established TSS near the Fermi level is strongly localized at the surface. Such varied behavior is explained by the differences in orbital composition between the specific TSS and its associated bulk states, respectively. This provides an orbital protection mechanism for topological states against mixing with the background of bulk bands.
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Submitted 16 February, 2017; v1 submitted 12 January, 2017;
originally announced January 2017.
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Discovery of Lorentz-violating Weyl fermion semimetal state in LaAlGe materials
Authors:
Su-Yang Xu,
Nasser Alidoust,
Guoqing Chang,
Hong Lu,
Bahadur Singh,
Ilya Belopolski,
Daniel Sanchez,
Xiao Zhang,
Guang Bian,
Hao Zheng,
Marius-Adrian Husanu,
Yi Bian,
Shin-Ming Huang,
Chuang-Han Hsu,
Tay-Rong Chang,
Horng-Tay Jeng,
Arun Bansil,
Vladimir N. Strocov,
Hsin Lin,
Shuang Jia,
M. Zahid Hasan
Abstract:
We report theoretical and experimental discovery of Lorentz-violating Weyl fermion semimetal type-II state in the LaAlGe class of materials. Previously type-II Weyl state was predicted in WTe2 materials which remains unrealized in surface experiments. We show theoretically and experimentally that LaAlGe class of materials are the robust platforms for the study of type-II Weyl physics.
We report theoretical and experimental discovery of Lorentz-violating Weyl fermion semimetal type-II state in the LaAlGe class of materials. Previously type-II Weyl state was predicted in WTe2 materials which remains unrealized in surface experiments. We show theoretically and experimentally that LaAlGe class of materials are the robust platforms for the study of type-II Weyl physics.
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Submitted 27 March, 2016; v1 submitted 23 March, 2016;
originally announced March 2016.
