Showing 1–3 of 3 results for author: Hurni, C A

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

Authors: Aurelien David, Nathan G. Young, Christophe A. Hurni, Michael D. Craven

Abstract: Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two contributions which scale with the cube of the carrier density: an intrinsic recombination --most likely standard Auger scattering-- and an extrinsic recombination which is proportional to the density of point defects. Th… ▽ More Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two contributions which scale with the cube of the carrier density: an intrinsic recombination --most likely standard Auger scattering-- and an extrinsic recombination which is proportional to the density of point defects. This second droop mechanism, which hasn't previously been observed, is likely caused by an impurity-assisted Auger process. Further, it is shown that longer-wavelength emitters suffer from higher point defect recombinations, in turn causing an increase in the extrinsic droop process. It is proposed that this effect leads to the green gap, and that point defect reduction is a strategy to both vanquish the green gap and more generally improve quantum efficiency at high current. △ Less

Submitted 6 April, 2019; v1 submitted 20 November, 2018; originally announced November 2018.

Comments: Second version: minor edits and figure updates, to match version published in Phys. Rev. Applied

Journal ref: Phys. Rev. Applied 11, 031001 (2019)

Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells

Authors: Aurelien David, Christophe A. Hurni, Nathan G. Young, Michael D. Craven

Abstract: The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole wavefunctions and show weak temperature dependence, in contrast with common empirical expectations for Shockley-Read-Hall recombinations. A model of field-assisted mult… ▽ More The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole wavefunctions and show weak temperature dependence, in contrast with common empirical expectations for Shockley-Read-Hall recombinations. A model of field-assisted multiphonon point defect recombination in quantum wells is introduced, and shown to quantitatively explain the data. This study provides insight on the high efficiency of III-Nitride light emitters. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Journal ref: Appl. Phys. Lett. 111, 233501 (2017)

Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

Authors: Aurelien David, Christophe A. Hurni, Nathan G. Young, Michael D. Craven

Abstract: The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electri… ▽ More The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined. △ Less

Submitted 31 August, 2016; v1 submitted 30 June, 2016; originally announced June 2016.

Journal ref: Appl. Phys. Lett. 109, 083501 (2016)