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Purely two-dimensional vortex matter in infinite-layer nickelates
Authors:
D. Sanchez-Manzano,
V. Humbert,
A. Gutiérrez-Llorente,
D. Zhang,
J. Santamaria,
M. Bibes,
L. Iglesias,
Javier E. Villegas
Abstract:
Characterizing the dimensionality of the superconducting state in the infinite-layer (IL) nickelates is crucial to understand its nature. Most studies have addressed the problem by studying the anisotropy of the upper critical fields. Yet, the dominance of Pauli-paramagnetism effects over orbital ones makes it challenging to interpret the experiments in terms of dimensionality. Here we address the…
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Characterizing the dimensionality of the superconducting state in the infinite-layer (IL) nickelates is crucial to understand its nature. Most studies have addressed the problem by studying the anisotropy of the upper critical fields. Yet, the dominance of Pauli-paramagnetism effects over orbital ones makes it challenging to interpret the experiments in terms of dimensionality. Here we address the question from a different perspective, by investigating the vortex phase diagram in the mixed-state. We demonstrate that superconducting Pr0.8Sr0.2NiO2 thin films present a vortex liquid-to-glass transition of a purely two-dimensional nature. The obtained results suggest that bidimensionality is an intrinsic property, and that superconductivity resides in fully-decoupled NiO2 planes. In this scenario, the coherence length along the c-axis must be shorter than the distance between those planes, while Josephson and magnetostatic coupling between them must be negligible. We believe that these conclusions are relevant for theories on the origin of superconductivity in the IL-nickelates.
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Submitted 18 October, 2024;
originally announced October 2024.
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Disentangling photodoping, photoconductivity, and photosuperconductivity in the cuprates
Authors:
R. El Hage,
D. Sánchez-Manzano,
V. Humbert,
S. J. Carreira,
V. Rouco,
A Sander,
F. Cuellar,
K. Seurre,
A. Lagarrigue,
J. Briatico,
J. Trastoy,
J. Santamaría,
Javier E. Villegas
Abstract:
The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa2Cu3O7-x can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects -- termed persistent photoconductivity (PPC) and photosuperconductivity (PPS) -- has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of h…
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The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa2Cu3O7-x can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects -- termed persistent photoconductivity (PPC) and photosuperconductivity (PPS) -- has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms since they present different wavelength and oxygen-content dependencies as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, PPC, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.
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Submitted 4 October, 2023;
originally announced October 2023.
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Memristive effects in YBa2Cu3O7-x devices with transistor-like structure
Authors:
Aurélien Lagarrigue,
Carolina de Dios,
Salvatore Mesoraca,
Santiago Carreira,
Vincent Humbert,
Javier Briatico,
Juan Trastoy,
Javier E. Villegas
Abstract:
Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produc…
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Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produce memory effects. These effects are triggered electrically in a three-terminal device whose structure is reminiscent of a transistor, consisting of a YBCO channel and an Al gate. The Al/YBCO interface, which controls the gate conductance, displays a giant, bipolar, reversible switching across a continuum of non-volatile conductance states that span over two Decades. This phenomenon is controlled by the gate voltage magnitude and is caused by oxygen exchange between YBCO and Al. Concomitantly, the channel shows a gradual, irreversible superconductor-to-insulator transition that retains a memory of the power dissipated in the device, and can be explained by induced bulk disorder. The observed effects, and the understanding of the interplay between the underlying mechanisms, constitute interesting ingredients for the design and realization of novel memristors and switches for superconducting electronics.
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Submitted 21 June, 2023;
originally announced June 2023.
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Superconducting bimodal ionic photo-memristor
Authors:
Ralph El Hage,
Vincent Humbert,
Victor Rouco,
Anke Sander,
Jérôme Charliac,
Salvatore Mesoraca,
Juan Trastoy,
Javier Briatico,
Jacobo Santamaría,
Javier E. Villegas
Abstract:
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develop…
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Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to developing devices that present an analogous response to optical excitation. Here we realize a new class of device, a tunnelling photo-memristor, whose behaviour is bimodal: both electrical and optical stimuli can trigger the switching across resistance states in a way determined by the dual optical-electrical history. This unique behaviour is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The microscopic mechanism at play is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. Oxygen exchange is controlled here via illumination by exploiting a competition between electrochemistry, photovoltaic effects and photo-assisted ion migration. In addition to their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, beyond facilitating the high connectivity required in neuromorphic circuits, brings photo-memristive effects to the realm of superconducting electronics.
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Submitted 20 April, 2022;
originally announced April 2022.
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Overactivated transport in the localized phase of the superconductor-insulator transition
Authors:
V. Humbert,
M. Ortũno,
A. M. Somoza,
L. Bergé,
L. Dumoulin,
C. A Marrache-Kikuchi
Abstract:
Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb_{x}Si_{1-x} close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that elec…
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Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb_{x}Si_{1-x} close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that electronic transport is activated and dominated by charging energies. The sample thickness variation results in a large spread of activation temperatures, fine-tuned via disorder. We show numerically and experimentally that the localization length varies exponentially with thickness. At the lowest temperatures, overactivated behavior is observed in the vicinity of the SIT and the increase in the activation energy can be attributed to the superconducting gap. We derive a relation between the increase in activation energy and the temperature below which overactivated behavior is observed. This relation is verified by many different quasi-2D systems.
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Submitted 17 February, 2021;
originally announced February 2021.
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Long-Range Propagation and Interference of $d$-wave Superconducting Pairs in Graphene
Authors:
D. Perconte,
K. Seurre,
V. Humbert,
C. Ulysse,
A. Sander,
J. Trastoy,
V. Zatko,
F. Godel,
P. R. Kidambi,
S. Hofmann,
X. P. Zhang,
D. Bercioux,
F. S. Bergeret,
B. Dlubak,
P. Seneor,
Javier E. Villegas
Abstract:
Recent experiments have shown that proximity with high-temperature superconductors induces unconventional superconducting correlations in graphene. Here we demonstrate that those correlations propagate hundreds of nanometer, allowing for the unique observation of $d$-wave Andreev pair interferences in YBa$_2$Cu$_3$O$_7$-graphene devices that behave as a Fabry-Pérot cavity. The interferences show a…
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Recent experiments have shown that proximity with high-temperature superconductors induces unconventional superconducting correlations in graphene. Here we demonstrate that those correlations propagate hundreds of nanometer, allowing for the unique observation of $d$-wave Andreev pair interferences in YBa$_2$Cu$_3$O$_7$-graphene devices that behave as a Fabry-Pérot cavity. The interferences show as a series of pronounced conductance oscillations analogous to those originally predicted by de Gennes--Saint-James for conventional metal-superconductor junctions. The present work is pivotal to the study of exotic directional effects expected for nodal superconductivity in Dirac materials.
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Submitted 8 September, 2020; v1 submitted 24 February, 2020;
originally announced February 2020.
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Observation of an antiferromagnetic quantum critical point in high-purity LaNiO$_3$
Authors:
Changjiang Liu,
Vincent F. C. Humbert,
Terence Bretz-Sullivan,
Gensheng Wang,
Deshun Hong,
Friederike Wrobel,
Jianjie Zhang,
Jason D. Hoffman,
John E. Pearson,
J Samuel Jiang,
Clarence Chang,
Alexey Suslov,
Nadya Mason,
M. R. Norman,
Anand Bhattacharya
Abstract:
Amongst the rare-earth perovskite nickelates, LaNiO$_3$ (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic…
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Amongst the rare-earth perovskite nickelates, LaNiO$_3$ (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic quantum critical point (QCP). The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities. We find that the temperature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuations of an antiferromagnetic nature. Furthermore, we find that the introduction of a small concentration of magnetic impurities qualitatively changes the magnetotransport properties of LNO, resembling that found in some heavy-fermion Kondo lattice systems in the vicinity of an antiferromagnetic QCP.
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Submitted 10 February, 2020;
originally announced February 2020.
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Electron glass effects in amorphous NbSi films
Authors:
J. Delahaye,
T. Grenet,
C. A Marrache-Kikuchi,
V. Humbert,
L. Bergé,
L. Dumoulin
Abstract:
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width i…
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We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.
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Submitted 17 March, 2020; v1 submitted 6 January, 2020;
originally announced January 2020.
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Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires
Authors:
S. T. Gill,
J. Damasco,
B. E. Janicek,
M. S. Durkin,
V. Humbert,
S. Gazibegovic,
D. Car,
E. P. A. M. Bakkers,
P. Y. Huang,
N. Mason
Abstract:
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the supercon…
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Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.
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Submitted 11 September, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
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Dissipative phases across the superconductor-to-insulator transition
Authors:
François Couëdo,
Olivier Crauste,
Anne-Aëlle Drillien,
Vincent Humbert,
Laurent Bergé,
Claire. A. Marrache-Kikuchi,
Louis Dumoulin
Abstract:
Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions.…
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Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions. In particular, in 2D, once superconductivity is destroyed by disorder, an insulating ground state is expected to emerge, as a result of a direct superconductor-to-insulator quantum phase transition. In such systems, no metallic state is theoretically expected to survive to the slightest disorder. Here we map out the phase diagram of amorphous NbSi thin films as functions of disorder and film thickness, with two metallic phases in between the superconducting and insulating ones. These two dissipative states, defined by a resistance which extrapolates to a finite value in the zero temperature limit, each bear a specific dependence on disorder. We argue that they originate from an inhomogeneous destruction of superconductivity, even if the system is morphologically homogeneous. Our results suggest that superconducting fluctuations can favor metallic states that would not otherwise exist.
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Submitted 2 November, 2016;
originally announced November 2016.
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Interference between magnetic field and cavity modes in an extended Josephson junction
Authors:
V. Humbert,
M. Aprili,
J. Hammer
Abstract:
An extended Josephson junction consists of two superconducting electrodes that are separated by an insulator and it is therefore also a microwave cavity. The superconducting phase difference across the junction determines the supercurrent as well as its spatial distribution. Both, an external magnetic field and a resonant cavity intrafield produce a spatial modification of the superconducting phas…
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An extended Josephson junction consists of two superconducting electrodes that are separated by an insulator and it is therefore also a microwave cavity. The superconducting phase difference across the junction determines the supercurrent as well as its spatial distribution. Both, an external magnetic field and a resonant cavity intrafield produce a spatial modification of the superconducting phase along the junction. The interplay between these two effects leads to interference in the critical current of the junction and allows us to continuously tune the coupling strength between the first cavity mode and the Josephson phase from 1 to -0.5. This enables static and dynamic control over the junction in the ultra-strong coupling regime.
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Submitted 24 January, 2012;
originally announced January 2012.
