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Edge-Dependent Step-Flow Growth Mechanism in $β$-Ga$_{2}$O$_{3}$ (100) Facet at the Atomic Level
Authors:
Qi Li,
Junlei Zhao,
Na Lin,
Xiufeng Cheng,
Xian Zhao,
Zhaojun Liu,
Zhitai Jia,
Mengyuan Hua
Abstract:
Homoepitaxial step-flow growth of high-quality $β$-Ga$_{2}$O$_{3}$ thin films is essential for the advancement of high-performance Ga$_{2}$O$_{3}$-based devices. In this work, the step-flow growth mechanism of $β$-Ga$_{2}$O$_{3}$ (100) facet is explored by machine-learning molecular dynamics simulations and density functional theory calculations. Our results reveal that Ga adatoms and Ga-O adatom…
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Homoepitaxial step-flow growth of high-quality $β$-Ga$_{2}$O$_{3}$ thin films is essential for the advancement of high-performance Ga$_{2}$O$_{3}$-based devices. In this work, the step-flow growth mechanism of $β$-Ga$_{2}$O$_{3}$ (100) facet is explored by machine-learning molecular dynamics simulations and density functional theory calculations. Our results reveal that Ga adatoms and Ga-O adatom pairs, with their high mobility, are the primary atomic species responsible for efficient surface migration on the (100) facet. The asymmetric monoclinic structure of $β$-Ga$_{2}$O$_{3}$ induces a distinct two-stage Ehrlich-Schwoebel barrier for Ga adatoms at the [00$\overline{1}$] step edge, contributing to the suppression of double-step and hillock formation. Furthermore, a miscut towards [00$\overline{1}$] does not induce the nucleation of stable twin boundaries, whereas a miscut towards [001] leads to the spontaneous formation of twin boundaries. This research provides meaningful insights not only for high-quality $β$-Ga$_{2}$O$_{3}$ homoepitaxy but also the step-flow growth mechanism of other similar systems.
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Submitted 16 January, 2025;
originally announced January 2025.
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Deterministic Creation of Identical Monochromatic Quantum Emitters in Hexagonal Boron Nitride
Authors:
Muchuan Hua,
Wei-Ying Chen,
Hanyu Hou,
Venkata Surya Chaitanya Kolluru,
Maria K. Y. Chan,
HaiHua Liu,
Thomas E. Gage,
Jian-Min Zuo,
Benjamin T. Diroll,
Jianguo Wen
Abstract:
Deterministic creation of quantum emitters with high single-photon-purity and excellent indistinguishability is essential for practical applications in quantum information science. Many successful attempts have been carried out in hexagonal boron nitride showing its capability of hosting room temperature quantum emitters. However, most of the existing methods produce emitters with heterogeneous op…
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Deterministic creation of quantum emitters with high single-photon-purity and excellent indistinguishability is essential for practical applications in quantum information science. Many successful attempts have been carried out in hexagonal boron nitride showing its capability of hosting room temperature quantum emitters. However, most of the existing methods produce emitters with heterogeneous optical properties and unclear creation mechanisms. Here, the authors report a deterministic creation of identical room temperature quantum emitters using masked-carbon-ion implantation on freestanding hBN flakes. Quantum emitters fabricated by our approach showed thermally limited monochromaticity with an emission center wavelength distribution of 590.7 +- 2.7 nm, a narrow full width half maximum of 7.1 +- 1.7 nm, excellent brightness (1MHz emission rate), and extraordinary stability. Our method provides a reliable platform for characterization and fabrication research on hBN based quantum emitters, helping to reveal the origins of the single-photon-emission behavior in hBN and favoring practical applications, especially the industrial-scale production of quantum technology.
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Submitted 16 October, 2024;
originally announced October 2024.
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Operando Ultrafast Damage-free Diffraction-Enhanced X-ray Absorption Spectroscopy for Chemical Reactivity of Polymer in Solvents
Authors:
Zhengxing Peng,
Antoine Lainé,
Ka Chon Ng,
Mutian Hua,
Brett A. Helms,
Miquel B. Salmeron,
Cheng Wang
Abstract:
Chemical recycling of plastics to its constituent monomers is a promising solution to develop a sustainable circular plastic economy. An in-situ X-ray absorption spectra (XAS) characterization is an important way to understand the deconstruction process. However, radiation damage, and long acquisition time, prevent such characterization for fast chemical process. Here, we present a novel experimen…
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Chemical recycling of plastics to its constituent monomers is a promising solution to develop a sustainable circular plastic economy. An in-situ X-ray absorption spectra (XAS) characterization is an important way to understand the deconstruction process. However, radiation damage, and long acquisition time, prevent such characterization for fast chemical process. Here, we present a novel experimental technique, which we name Diffraction-Enhanced X-ray Absorption Spectroscopy (DE-XAS), where the plastic material is supported on a graphene layer covering a periodic pattern of holes in a perforated SiNx membrane. The XAS is obtained by measuring the energy-dependent intensity of the X-ray diffracted beams going through the plastic film over the holes in the SiNx membrane. Our method decreases beam damage by orders of magnitude while providing good signal/noise ratio data. We demonstrate the suppression of beam damage with samples of polymethyl methacrylate (PMMA) and the operando characterization of polymer deconstruction process in acid with polydiketoenamine (PDK). This proof-of-concept of the DE-XAS technique shows its great potential for studying fast chemical processes, picoseconds to nanoseconds, using fast CCD detectors with short readout time. We believe the DE-XAS technique offers opportunities for studies of chemical reactions, e.g., photoresist, and many others.
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Submitted 30 September, 2024;
originally announced October 2024.
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Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations
Authors:
Taiqiao Liu,
Zeyuan Li,
Junlei Zhao,
Xiaoyu Fei,
Jiaren Feng,
Yijing Zuo,
Mengyuan Hua,
Yuzheng Guo,
Sheng Liu,
Zhaofu Zhang
Abstract:
Ultrawide bandgap semiconductor $β$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage under extreme conditions. In this study, we investigate the orientation-dependent mechanisms of radiation damage on four experimentally relevant $β$-Ga2O3 surface fac…
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Ultrawide bandgap semiconductor $β$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage under extreme conditions. In this study, we investigate the orientation-dependent mechanisms of radiation damage on four experimentally relevant $β$-Ga2O3 surface facets, namely, (100), (010), (001), and (-201), at various temperatures. We employ a multiscale atomic simulation approach, combining machine-learning-driven molecular dynamics (ML-MD) simulations and density functional theory (DFT) calculations. The results reveal that Ga vacancies and O interstitials are the predominant defects across all four surfaces, with the formation of many antisite defects Ga_O and few O_Ga observed. Among the two Ga sites and three O sites, the vacancy found in the O2 site is dominant, while the interstitials at the Ga1 and O1 sites are more significant. Interestingly, the (010) surface exhibits the lowest defect density, owing to its more profound channeling effect leading to a broader spread of defects. The influence of temperature on surface irradiation damage of $β$-Ga2O3 should be evaluated based on the unique crystal surface characteristics. Moreover, the formation energy and defect concentration calculated by DFT corroborate the results of the MD simulations. Comprehending surface radiation damage at the atomic level is crucial for assessing the radiation tolerance and predicting the performance changes of $β$-Ga2O3-based device in high-radiation environments.
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Submitted 13 August, 2024;
originally announced August 2024.
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Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide
Authors:
Junlei Zhao,
Javier García Fernández,
Alexander Azarov,
Ru He,
Øystein Prytz,
Kai Nordlund,
Mengyuan Hua,
Flyura Djurabekova,
Andrej Kuznetsov
Abstract:
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this…
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Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this Letter, we focused on such crystallization instead of amorphization in collision cascades in gallium oxide (\ce{Ga2O3}). We determined the disorder threshold for irreversible $β$-to-$γ$ polymorph transition and explained why it results in elevating energy to that of the $γ$-polymorph, which exhibits the highest polymorph energy in the system below the amorphous state. Specifically, we demonstrate that upon reaching the disorder transition threshold, the \ce{Ga}-sublattice kinetically favors transitioning to the $γ$-like configuration, requiring significantly less migration for \ce{Ga} atoms to reach the lattice sites during post-cascade processes. As such, our data provide a consistent explanation of this remarkable phenomenon and can serve as a toolbox for predictive multi-polymorph fabrication.
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Submitted 7 March, 2024; v1 submitted 15 January, 2024;
originally announced January 2024.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
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Orientation-Dependent Atomic-Scale Mechanism of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth
Authors:
Jun Zhang,
Junlei Zhao,
Junting Chen,
Mengyuan Hua
Abstract:
$β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a fundamental and vital role in the $\mathrm{Ga}_{2}\mathrm{O}_{3}$-based device fabrication. In this work, epitaxial growth mechanisms of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}…
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$β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a fundamental and vital role in the $\mathrm{Ga}_{2}\mathrm{O}_{3}$-based device fabrication. In this work, epitaxial growth mechanisms of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ with four low Miller-index facets, namely (100), (010), (001), and ($\overline{2}$01), are systematically explored using large-scale machine-learning molecular dynamics simulations at the atomic scale. The simulations reveal that the migration of the face-centered cubic stacking O sublattice plays a predominant role in rationalizing the different growth mechanisms between (100)/(010)/(001) and ($\overline{2}$01) orientations. The resultant complex combinations of the stacking faults and twin boundaries are carefully identified, and shows a good agreement with the experimental observation and ab initio calculation. Our results provide useful insights into the gas-phase epitaxial growth of the $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin films and suggest possible ways to tailor its properties for specific applications.
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Submitted 18 September, 2023;
originally announced September 2023.
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Efficient Training of Energy-Based Models Using Jarzynski Equality
Authors:
Davide Carbone,
Mengjian Hua,
Simon Coste,
Eric Vanden-Eijnden
Abstract:
Energy-based models (EBMs) are generative models inspired by statistical physics with a wide range of applications in unsupervised learning. Their performance is best measured by the cross-entropy (CE) of the model distribution relative to the data distribution. Using the CE as the objective for training is however challenging because the computation of its gradient with respect to the model param…
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Energy-based models (EBMs) are generative models inspired by statistical physics with a wide range of applications in unsupervised learning. Their performance is best measured by the cross-entropy (CE) of the model distribution relative to the data distribution. Using the CE as the objective for training is however challenging because the computation of its gradient with respect to the model parameters requires sampling the model distribution. Here we show how results for nonequilibrium thermodynamics based on Jarzynski equality together with tools from sequential Monte-Carlo sampling can be used to perform this computation efficiently and avoid the uncontrolled approximations made using the standard contrastive divergence algorithm. Specifically, we introduce a modification of the unadjusted Langevin algorithm (ULA) in which each walker acquires a weight that enables the estimation of the gradient of the cross-entropy at any step during GD, thereby bypassing sampling biases induced by slow mixing of ULA. We illustrate these results with numerical experiments on Gaussian mixture distributions as well as the MNIST dataset. We show that the proposed approach outperforms methods based on the contrastive divergence algorithm in all the considered situations.
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Submitted 11 December, 2023; v1 submitted 30 May, 2023;
originally announced May 2023.
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Complex $\mathrm{Ga}_{2}\mathrm{O}_{3}$ Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials
Authors:
Junlei Zhao,
Jesper Byggmästar,
Huan He,
Kai Nordlund,
Flyura Djurabekova,
Mengyuan Hua
Abstract:
$\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}…
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$\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}$ polymorphs and low-symmetry disordered structures is missing. In this work, we develop two types of kernel-based machine-learning Gaussian approximation potentials (ML-GAPs) for $\mathrm{Ga}_{2}\mathrm{O}_{3}$ with high accuracy for $β$/$κ$/$α$/$δ$/$γ$ polymorphs and generality for disordered stoichiometric structures. We release two versions of interatomic potentials in parallel, namely soapGAP and tabGAP, for excellent accuracy and exceeding speedup, respectively. We systematically show that both the soapGAP and tabGAP can reproduce the structural properties of all the five polymorphs in an exceptional agreement with ab initio results, meanwhile boost the computational efficiency with $5\times10^{2}$ and $2\times10^{5}$ computing speed increases compared to density functional theory, respectively. The results show that the liquid-solid phase transition proceeds in three different stages, a "slow transition", "fast transition" and "only Ga migration". We show that this complex dynamics can be understood in terms of different behavior of O and Ga sublattices in the interfacial layer.
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Submitted 4 May, 2023; v1 submitted 6 December, 2022;
originally announced December 2022.
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First principles study on the mechanism of abnormal viscosity change of pure Al & Pb melts based on Wulff cluster model
Authors:
Anchen Shao,
Lina Hu,
Lin Song,
Minghao Hua,
Jiajia Xue,
Shuang Wu,
Xuelei Tian,
Xiaohang Lin
Abstract:
In this paper, the Wulff cluster model combined phonon calculation is used to investigate the relationship between the structure of metallic melts (Pb/Al) and the abnormal viscosity change. Although absolute value of the surface energy does not change significantly with temperature, the Wulff shape changed evidently. When temperature raise to 975K, Pb(321) surface that has the highest interaction…
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In this paper, the Wulff cluster model combined phonon calculation is used to investigate the relationship between the structure of metallic melts (Pb/Al) and the abnormal viscosity change. Although absolute value of the surface energy does not change significantly with temperature, the Wulff shape changed evidently. When temperature raise to 975K, Pb(321) surface that has the highest interaction strength completely disappears, while the abnormal viscosity drop happens at the same temperature range. Oppositely, Al(100) surface that has the lowest interaction strength disappears when temperature is higher than 1075K, and at the same temperature range, the abnormal viscosity rise has been observed. The abnormal viscosity drop corresponds to the disappearance of surface with the highest interaction strength (Pb(321) surface), while the rise one corresponds to the disappearance of surface with the lowest adsorption energy (Al(100) surface). All evidence indicates that the uniformity between abnormal viscosity change and the change of Wulff shape is not a coincidence. A possible mechanism of the abnormal viscosity change is that it caused by the significant structure change of cluster (short range ordering) in the metallic melts.
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Submitted 22 October, 2022; v1 submitted 13 October, 2022;
originally announced October 2022.
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Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension
Authors:
Junting Chen,
Junlei Zhao,
Sirui Feng,
Li Zhang,
Yan Cheng,
Hang Liao,
Zheyang Zheng,
Xiaolong Chen,
Zhen Gao,
Kevin J. Chen,
Mengyuan Hua
Abstract:
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the development of GaN-based devices, especially regarding device stability and reliability. Here, we overcome this challenge by converting the GaN surface into a gallium…
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Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the development of GaN-based devices, especially regarding device stability and reliability. Here, we overcome this challenge by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in-situ two-step "oxidation-reconfiguration" process. The oxygen plasma treatment overcomes the chemical inertness of the GaN surface, and the sequential thermal annealing manipulates the kinetic-thermodynamic reaction pathways to create a metastable GaON nanolayer with wurtzite lattice. This GaN-derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including wide bandgap, high thermodynamic stability, and large valence band offset with GaN substrate. These enhanced physical properties can be further leveraged to enable GaN-based applications in new scenarios, such as complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion, making GaON a versatile functionality extender.
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Submitted 28 September, 2022;
originally announced September 2022.
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Net energy up-conversion processes in CdSe/CdS (core/shell) quantum dots, a possible pathway to towards optical cooling
Authors:
Muchuan Hua,
Ricardo S. Decca
Abstract:
The investigation of the possibility of optical refrigeration (OR) on zinc-blende cadmium selenide/cadmium sulfide (CdSe/CdS) core/shell structure quantum dots (QDs) has been carried out. Quality samples were synthesized in our lab, and significant energy up-conversion photoluminescence (UCPL) was observed in these samples, showing the potential of generating net cooling effects. To better underst…
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The investigation of the possibility of optical refrigeration (OR) on zinc-blende cadmium selenide/cadmium sulfide (CdSe/CdS) core/shell structure quantum dots (QDs) has been carried out. Quality samples were synthesized in our lab, and significant energy up-conversion photoluminescence (UCPL) was observed in these samples, showing the potential of generating net cooling effects. To better understand and predict the UCPL characteristics of the QDs, a semi-empirical model has been developed, showing good agreement with our experimental results. The model takes into account the corresponding quantum yield and cooling efficiency, predicting the possibility of realizing optical refrigeration on a CdSe QDs system.
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Submitted 28 March, 2022;
originally announced March 2022.
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Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions
Authors:
Junlei Zhao,
Xinyu Wang,
Haohao Chen,
Zhaofu Zhang,
Mengyuan Hua
Abstract:
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane ferroelectricity have attracted substantial attentions. In this work, the structural, electronic and optical properties of 2D ferroelectric Ga2O3 bilayer system are systema…
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Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane ferroelectricity have attracted substantial attentions. In this work, the structural, electronic and optical properties of 2D ferroelectric Ga2O3 bilayer system are systematically studied using ab-initio computational method. Intrinsic dipoles of the two freestanding monolayers lead to three distinct dipole models (one ferroelectric and two antiferroelectric models). The stable stacking configurations of ferroelectric and antiferroelectric dipole models can be transferred with polarization reversal transition of the monolayers without additional operation. Interlayer perturbation effects combined with biaxial-strain engineering lead to high tunablility of the electronic and optical properties of the bilayer systems. Surprisingly, the results reveal a phase transition from vdW to ionic interlayer interaction induced by in-plane biaxial tensile strain. Detailed analyses suggest a transition mechanism based on the ionic bonding nature of the Ga2O3 system, involving interlayer rearrangement of anions to compensate the symmetry breaking of the heavily distorted ionic folding configurations. These insights can open new prospects for future experimental synthesis, characterization and application of 2D Ga2O3 atomic-thin layered systems.
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Submitted 10 December, 2021;
originally announced December 2021.
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Bridging the gap between atomically thin semiconductors and metal leads
Authors:
Xiangbin Cai,
Zefei Wu,
Xu Han,
Shuigang Xu,
Jiangxiazi Lin,
Tianyi Han,
Pingge He,
Xuemeng Feng,
Liheng An,
Run Shi,
Jingwei Wang,
Zhehan Ying,
Yuan Cai,
Mengyuan Hua,
Junwei Liu,
Ding Pan,
Chun Cheng,
Ning Wang
Abstract:
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearl…
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Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.
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Submitted 1 July, 2021;
originally announced July 2021.
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Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study
Authors:
Junlei Zhao,
Jesper Byggmastar,
Zhaofu Zhang,
Flyura Djurabekova,
Kai Nordlund,
Mengyuan Hua
Abstract:
Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and promising applications. In this paper, we study phase transitions among three low-energy stable Ga2O3 monolayer configurations using density functional theory and a…
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Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and promising applications. In this paper, we study phase transitions among three low-energy stable Ga2O3 monolayer configurations using density functional theory and a newly developed machine-learning Gaussian approximation potential, together with solid-state nudged elastic band calculations. Kinetic minimum energy paths involving direct atomic jump as well as concerted layer motion are investigated. The low phase transition barriers indicate feasible tunability of the phase transition and orientation via strain engineering and external electric fields. Large-scale calculations using the newly trained machine-learning potential on the thermally activated single-atom jumps reveal the clear nucleation and growth processes of different domains. The results provide useful insights to future experimental synthesis and characterization of 2D Ga2O3 monolayers.
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Submitted 27 May, 2021;
originally announced May 2021.
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Quantum simulation of clustered photosynthetic light harvesting in a superconducting quantum circuit
Authors:
Ming-Jie Tao,
Ming Hua,
Na-Na Zhang,
Wan-Ting He,
Qing Ai,
Fu-Guo Deng
Abstract:
We propose a scheme to simulate the exciton energy transfer (EET) of photosynthetic complexes in a quantum superconducting circuit system. Our system is composed of two pairs of superconducting charge qubits coupled to two separated high-Q superconducting transmission line resonators (TLRs) connected by a capacitance. When the frequencies of the qubits are largely detuned with those of the TLRs, w…
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We propose a scheme to simulate the exciton energy transfer (EET) of photosynthetic complexes in a quantum superconducting circuit system. Our system is composed of two pairs of superconducting charge qubits coupled to two separated high-Q superconducting transmission line resonators (TLRs) connected by a capacitance. When the frequencies of the qubits are largely detuned with those of the TLRs, we simulate the process of the EET from the first qubit to the fourth qubit. By tuning the couplings between the qubits and the TLRs, and the coupling between the two TLRs, we can modify the effective coupling strengths between the qubits and thus demonstrate the geometric effects on the EET. It is shown that a moderate clustered geometry supports optimal EET by using exciton delocalization and energy matching condition. And the population loss during the EET has been trapped in the two TLRs.
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Submitted 27 August, 2020; v1 submitted 13 October, 2018;
originally announced October 2018.
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Classification of stable Dirac and Weyl semimetals with reflection and rotational symmetry
Authors:
Zihao Gao,
Meng Hua,
Haijun Zhang,
Xiao Zhang
Abstract:
Three dimensional (3D) Dirac semimetal is a novel state of quantum matter, characterized by the gapless bulk four-fold degeneracy near Fermi energy. Soon after its discovery, the classification of stable 3D Dirac semimetals with inversion and rotational symmetry have been studied. However, only ten out of thirty-two point groups have both inversion and rotational symmetry, and we need a more compl…
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Three dimensional (3D) Dirac semimetal is a novel state of quantum matter, characterized by the gapless bulk four-fold degeneracy near Fermi energy. Soon after its discovery, the classification of stable 3D Dirac semimetals with inversion and rotational symmetry have been studied. However, only ten out of thirty-two point groups have both inversion and rotational symmetry, and we need a more complete classification of stable 3D Dirac semimetals. Here we classify stable 3D Dirac semimetals with reflection symmetry and rotational symmetry in the presence of time reversal symmetry, which belong to seventeen different point groups. These systems include the systems preserving inversion symmetry except $\mathrm{C_{3i}}$. They have two classes of reflection symmetry, with the mirror plane parallel to rotation axis and the mirror plane perpendicular to rotation axis. In both cases two types of Dirac semimetals are determined by four different reflection symmetries. The first type of Dirac semimetals will appear through accidental band crossing (ABC). The second type of Dirac semimetals have a Dirac point at a time reversal invariant momentum (TBC). We show that in both mirror parallel and perpendicular cases, $C_{2,3}$ symmetry can only protect stable Dirac points via TBC, while $C_{4,6}$ symmetry can have stable Dirac points as ABC or TBC. We further discuss that Weyl line nodes and Dirac semimetal can exist in Brillouin zone at the same time using $\mathrm{C_{4v}}$ symmetry as an example. Finally we classify Dirac line nodes and Weyl line nodes to show in which types of mirror plane they can exist.
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Submitted 9 August, 2015; v1 submitted 27 July, 2015;
originally announced July 2015.
