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Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride
Authors:
Yu-Chiang Hsieh,
Zhen-You Lin,
Shin-Ji Fung,
Wen-Shin Lu,
Sheng-Chin Ho,
Siang-Ping Hong,
Sheng-Zhu Ho,
Chiu-Hua Huang,
Kenji Watanabe,
Takashi Taniguchi,
Yang-Hao Chan,
Yi-Chun Chen,
Chung-Lin Wu,
Tse-Ming Chen
Abstract:
Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality m…
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Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.
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Submitted 2 January, 2024;
originally announced January 2024.
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Ultrahigh Photoresponsivity of Gold Nanodisk Array/CVD MoS$_2$-based Hybrid Phototransistor
Authors:
Shyam Narayan Singh Yadav,
Po-Liang Chen,
Yu-Chi Yao,
Yen-Yu Wang,
Der-Hsien Lien,
Yu-Jung Lu,
Ya-Ping Hsieh,
Chang-Hua Liu,
Ta-Jen Yen
Abstract:
Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor optoelectronic performances, mainly limited by their low optical absorption. In this work, we hybridized CVD-grown monolayer MoS$_2$ with a gold nanodisk (AuND) array to…
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Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor optoelectronic performances, mainly limited by their low optical absorption. In this work, we hybridized CVD-grown monolayer MoS$_2$ with a gold nanodisk (AuND) array to demonstrate a superior visible photodetector through a synergetic effect. It is evident from our experimental results that there is a strong light-matter interaction between AuNDs and monolayer MoS$_2$, which results in better photodetection due to a surface trap state passivation with a longer charge carrier lifetime compared to pristine MoS$_2$. In particular, the AuND/MoS$_2$ system demonstrated a photoresponsivity of $8.7 \times 10^{4}$ A/W, specific detectivity of $6.9 \times 10^{13}$ Jones, and gain $1.7 \times 10^{5}$ at $31.84 μW/cm^{2}$ illumination power density of 632 nm wavelength with an applied voltage of 4.0 V for an AuND/MoS$_2$-based photodetector. To our knowledge, these optoelectronic responses are one order higher than reported results for CVD MoS$_2$-based photodetector in the literature.
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Submitted 28 August, 2023;
originally announced August 2023.
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Heterogeneous relational message passing networks for molecular dynamics simulations
Authors:
Zun Wang,
Chong Wang,
Sibo Zhao,
Yong Xu,
Shaogang Hao,
Chang Yu Hsieh,
Bing-Lin Gu,
Wenhui Duan
Abstract:
With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecula…
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With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecular systems in terms of homogeneous graph, which severely limits the expressive power for representing diverse interactions. In practice, graph data with multiple node and edge types is ubiquitous and more appropriate for molecular systems. Thus, we propose the heterogeneous relational message passing network (HermNet), an end-to-end heterogeneous graph neural networks, to efficiently express multiple interactions in a single model with {\it ab initio} accuracy. HermNet performs impressively against many top-performing models on both molecular and extended systems. Specifically, HermNet outperforms other tested models in nearly 75\%, 83\% and 94\% of tasks on MD17, QM9 and extended systems datasets, respectively. Finally, we elucidate how the design of HermNet is compatible with quantum mechanics from the perspective of the density functional theory. Besides, HermNet is a universal framework, whose sub-networks could be replaced by other advanced models.
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Submitted 2 September, 2021;
originally announced September 2021.
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Generating extreme electric fields in 2D materials by dual ionic gating
Authors:
Benjamin I. Weintrub,
Yu-Ling Hsieh,
Jan N. Kirchhof,
Kirill I. Bolotin
Abstract:
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below i…
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We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields.
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Submitted 5 July, 2022; v1 submitted 11 August, 2021;
originally announced August 2021.
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Machine Learning-based Automatic Graphene Detection with Color Correction for Optical Microscope Images
Authors:
Hui-Ying Siao,
Siyu Qi,
Zhi Ding,
Chia-Yu Lin,
Yu-Chiang Hsieh,
Tse-Ming Chen
Abstract:
Graphene serves critical application and research purposes in various fields. However, fabricating high-quality and large quantities of graphene is time-consuming and it requires heavy human resource labor costs. In this paper, we propose a Machine Learning-based Automatic Graphene Detection Method with Color Correction (MLA-GDCC), a reliable and autonomous graphene detection from microscopic imag…
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Graphene serves critical application and research purposes in various fields. However, fabricating high-quality and large quantities of graphene is time-consuming and it requires heavy human resource labor costs. In this paper, we propose a Machine Learning-based Automatic Graphene Detection Method with Color Correction (MLA-GDCC), a reliable and autonomous graphene detection from microscopic images. The MLA-GDCC includes a white balance (WB) to correct the color imbalance on the images, a modified U-Net and a support vector machine (SVM) to segment the graphene flakes. Considering the color shifts of the images caused by different cameras, we apply WB correction to correct the imbalance of the color pixels. A modified U-Net model, a convolutional neural network (CNN) architecture for fast and precise image segmentation, is introduced to segment the graphene flakes from the background. In order to improve the pixel-level accuracy, we implement a SVM after the modified U-Net model to separate the monolayer and bilayer graphene flakes. The MLA-GDCC achieves flake-level detection rates of 87.09% for monolayer and 90.41% for bilayer graphene, and the pixel-level accuracy of 99.27% for monolayer and 98.92% for bilayer graphene. MLA-GDCC not only achieves high detection rates of the graphene flakes but also speeds up the latency for the graphene detection process from hours to seconds.
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Submitted 24 March, 2021;
originally announced March 2021.
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Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene
Authors:
Sheng-Chin Ho,
Ching-Hao Chang,
Yu-Chiang Hsieh,
Shun-Tsung Lo,
Botsz Huang,
Thi-Hai-Yen Vu,
Carmine Ortix,
Tse-Ming Chen
Abstract:
The ability to engineer the electronic band structure and, more strikingly, to access new exotic phase of matter has been the cornerstone of the advance of science and technology. Twisting van der Waals materials to form moiré superlattice is a powerful paradigm and can drive graphene from a normal metallic state into an insulating, superconducting, or ferromagnetic states. Here, we present a new…
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The ability to engineer the electronic band structure and, more strikingly, to access new exotic phase of matter has been the cornerstone of the advance of science and technology. Twisting van der Waals materials to form moiré superlattice is a powerful paradigm and can drive graphene from a normal metallic state into an insulating, superconducting, or ferromagnetic states. Here, we present a new route to create non-trivial band structure and consequently an exotic phase of matter via lithographically patterned strain (lattice deformation). This method is used to realize an artificially corrugated bilayer graphene wherein the real-space and momentum-space pseudo-magnetic fields (Berry curvatures) coexist and have nontrivial properties, namely, the Berry curvature dipole. This new class of condensed-matter systems enables us to observe the so-called nonlinear anomalous Hall effect and a new type of Hall effect without breaking the time-reversal symmetry. Such artificial material system and our approach to unconventional electronic states may open an avenue of geometrical and/or topological quantum phenomena as well as that of band engineering in van der Waals crystals.
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Submitted 5 March, 2021; v1 submitted 16 October, 2019;
originally announced October 2019.
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Non-Markovianity, information backflow and system-environment correlation for open-quantum-system processes
Authors:
Yun-Yi Hsieh,
Zheng-Yao Su,
Hsi-Sheng Goan
Abstract:
A Markovian process of a system is defined classically as a process in which the future state of the system is fully determined by only its present state, not by its previous history. There have been several measures of non-Markovianity to quantify the degrees of non-Markovian effect in a process of an open quantum system based on information backflow from the environment to the system. However, t…
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A Markovian process of a system is defined classically as a process in which the future state of the system is fully determined by only its present state, not by its previous history. There have been several measures of non-Markovianity to quantify the degrees of non-Markovian effect in a process of an open quantum system based on information backflow from the environment to the system. However, the condition for the witness of the system information backflow does not coincide with the classical definition of a Markovian process. Recently, a new measure with a condition that coincides with the classical definition in the relevant limit has been proposed. Here, we focus on the new definition (measure) for quantum non-Markovian processes, and characterize the Markovian condition as a quantum process that has no information backflow through the reduced environment state (IBTRES) and no system-environment correlation effect (SECE). The action of IBTRES produces non-Markovian effects by flowing the information of quantum operations performed by an experimenter at earlier times back to the system through the environment, while the SECE can produce non-Markovian effect without carrying any earlier quantum operation information. We give the necessary and sufficient conditions for no IBTRES and no SECE, respectively, and show that a process is Markovian if and only if it has no IBTRES and no SECE. The quantitative measures and algorithms for calculating non-Markovianity, IBTRES and soly-SECE are explicitly presented.
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Submitted 19 June, 2019;
originally announced June 2019.
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Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods
Authors:
Yu-Sheng Huang,
Yu-Hsin Weng,
Yung-Sheng Chen,
Shih-Wei Feng,
Chie-Tong Kuo,
Ming-Yen Lu,
Yung-Chen Cheng,
Ya-Ping Hsieh,
Hsiang-Chen Wang
Abstract:
We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the…
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We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.
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Submitted 13 December, 2016;
originally announced December 2016.
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Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation
Authors:
Kelvin J. A. Ooi,
Hong Son Chu,
Chang Yu Hsieh,
Dawn T. H. Tan,
Lay Kee Ang
Abstract:
Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavel…
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Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.
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Submitted 27 August, 2015;
originally announced August 2015.
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Observation of pseudogap-like feature above Tc in LiFeAs and (Ba0.6K0.4)Fe2As2 by ultrafast optical measurement
Authors:
Kung-Hsuan Lin,
Kuan-Jen Wang,
Chung-Chieh Chang,
Yu-Chieh Wen,
Dzung-Han Tsai,
Yu-Ruei Wu,
Yao-Tsung Hsieh,
Ming-Jye Wang,
Bing Lv,
Paul Ching-Wu Chu,
Maw-Kuen Wu
Abstract:
We utilize ultrafast optical measurement to study the quasiparticle relaxation in stoichiometric LiFeAs and nearly optimally doped (BaK)Fe2As2 crystals. According to our temperature-dependent studies of LiFeAs, we have observed pseudogap-like feature at onset temperature of ~ 55 K, which is above Tc = 15 K. In addition, the onset temperature of pseudogap ~90K was also observed in Ba0.6K0.4Fe2As2 (…
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We utilize ultrafast optical measurement to study the quasiparticle relaxation in stoichiometric LiFeAs and nearly optimally doped (BaK)Fe2As2 crystals. According to our temperature-dependent studies of LiFeAs, we have observed pseudogap-like feature at onset temperature of ~ 55 K, which is above Tc = 15 K. In addition, the onset temperature of pseudogap ~90K was also observed in Ba0.6K0.4Fe2As2 (Tc = 36 K). Our findings seem implying that the pseudogap feature, which is due to antiferromagnetic fluctuations, is universal for the largely studied 11, 111, 122, and 1111 iron-based superconductors.
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Submitted 14 July, 2014;
originally announced July 2014.
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Quantum Impurity in Luttinger Liquid: Universal Conductance with Entanglement Renormalization
Authors:
Ya-Lin Lo,
Yun-Da Hsieh,
Chang-Yu Hou,
Pochung Chen,
Ying-Jer Kao
Abstract:
We study numerically the universal conductance of Luttinger liquids wire with a single impurity via the Muti-scale Entanglement Renormalization Ansatz (MERA). The scale invariant MERA provides an efficient way to extract scaling operators and scaling dimensions for both the bulk and the boundary conformal field theories. By utilizing the key relationship between the conductance tensor and ground-s…
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We study numerically the universal conductance of Luttinger liquids wire with a single impurity via the Muti-scale Entanglement Renormalization Ansatz (MERA). The scale invariant MERA provides an efficient way to extract scaling operators and scaling dimensions for both the bulk and the boundary conformal field theories. By utilizing the key relationship between the conductance tensor and ground-state correlation function, the universal conductance can be evaluated within the framework of the boundary MERA. We construct the boundary MERA to compute the correlation functions and scaling dimensions for the Kane-Fisher fixed points by modeling the single impurity as a junction (weak link) of two interacting wires. We show that the universal behavior of the junction can be easily identified within the MERA and argue that the boundary MERA framework has tremendous potential to classify the fixed points in general multi-wire junctions.
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Submitted 3 September, 2014; v1 submitted 21 February, 2014;
originally announced February 2014.
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Detection of symmetry-protected topological phases in one dimension with multiscale entanglement renormalization
Authors:
Hsueh-Wen Chang,
Yun-Da Hsieh,
Ying-Jer Kao
Abstract:
Symmetry-protected topological (SPT) phases are short-range entangled quantum phases with symmetry, which have gapped excitations in the bulk and gapless modes at the edge. In this paper, we study the SPT phases in the spin-1 Heisenberg chain with a single-ion anisotropy D, which has a quantum phase transition between a Haldane phase and a large-D phase. Using symmetric multiscale entanglement ren…
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Symmetry-protected topological (SPT) phases are short-range entangled quantum phases with symmetry, which have gapped excitations in the bulk and gapless modes at the edge. In this paper, we study the SPT phases in the spin-1 Heisenberg chain with a single-ion anisotropy D, which has a quantum phase transition between a Haldane phase and a large-D phase. Using symmetric multiscale entanglement renormalization ansatz (MERA) tensor networks, we study the nonlocal order parameters for time-reversal and inversion symmetry. For the inversion symmetric MERA, we propose a brick-and-rope representation that gives a geometrical interpretation of inversion symmetric tensors. Finally, we study the symmetric renormalization group (RG) flow of the inversion symmetric string-order parameter, and show that entanglement renormalization with symmetric tensors produces proper behavior of the RG fixed-points.
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Submitted 12 May, 2013;
originally announced May 2013.
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Finite-size scaling method for the Berezinskii-Kosterlitz-Thouless transition
Authors:
Yun-Da Hsieh,
Ying-Jer Kao,
A. W. Sandvik
Abstract:
We test an improved finite-size scaling method for reliably extracting the critical temperature $T_{\rm BKT}$ of a Berezinskii-Kosterlitz-Thouless (BKT) transition. Using known single-parameter logarithmic corrections to the spin stiffness $ρ_s$ at $T_{\rm BKT}$ in combination with the Kosterlitz-Nelson relation between the transition temperature and the stiffness,…
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We test an improved finite-size scaling method for reliably extracting the critical temperature $T_{\rm BKT}$ of a Berezinskii-Kosterlitz-Thouless (BKT) transition. Using known single-parameter logarithmic corrections to the spin stiffness $ρ_s$ at $T_{\rm BKT}$ in combination with the Kosterlitz-Nelson relation between the transition temperature and the stiffness, $ρ_s(T_{\rm BKT})=2T_{\rm BKT}/π$, we define a size dependent transition temperature $T_{\rm BKT}(L_1,L_2)$ based on a pair of system sizes $L_1,L_2$, e.g., $L_2=2L_1$. We use Monte Carlo data for the standard two-dimensional classical XY model to demonstrate that this quantity is well behaved and can be reliably extrapolated to the thermodynamic limit using the next expected logarithmic correction beyond the ones included in defining $T_{\rm BKT}(L_1,L_2)$. For the Monte Carlo calculations we use GPU (graphical processing unit) computing to obtain high-precision data for $L$ up to 512. We find that the sub-leading logarithmic corrections have significant effects on the extrapolation. Our result $T_{\rm BKT}=0.8935(1)$ is several error bars above the previously best estimates of the transition temperature; $T_{\rm BKT} \approx 0.8929$. If only the leading log-correction is used, the result is, however, consistent with the lower value, suggesting that previous works have underestimated $T_{\rm BKT}$ because of neglect of sub-leading logarithms. Our method is easy to implement in practice and should be applicable to generic BKT transitions.
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Submitted 17 June, 2013; v1 submitted 12 February, 2013;
originally announced February 2013.
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High-precision Monte Carlo study of the three-dimensional XY model on GPU
Authors:
Ti-Yen Lan,
Yun-Da Hsieh,
Ying-Jer Kao
Abstract:
We perform large-scale Monte Carlo simulations of the classical XY model on a three-dimensional $L\times L \times L$ cubic lattice using the graphics processing unit (GPU). By the combination of Metropolis single-spin flip, over-relaxation and parallel-tempering methods, we simulate systems up to L=160. Performing the finite-size scaling analysis, we obtain estimates of the critical exponents for…
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We perform large-scale Monte Carlo simulations of the classical XY model on a three-dimensional $L\times L \times L$ cubic lattice using the graphics processing unit (GPU). By the combination of Metropolis single-spin flip, over-relaxation and parallel-tempering methods, we simulate systems up to L=160. Performing the finite-size scaling analysis, we obtain estimates of the critical exponents for the three-dimensional XY universality class: $α=-0.01293(48)$ and $ν=0.67098(16)$. Our estimate for the correlation-length exponent $ν$, in contrast to previous theoretical estimates, agrees with the most recent experimental estimate $ν_{\rm exp}=0.6709(1)$ at the superfluid transition of $^4$He in a microgravity environment.
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Submitted 5 November, 2012;
originally announced November 2012.
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Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface
Authors:
Ying-Hui Hsieh,
Jia-Ming Liou,
Bo-Chao Huang,
Chen-Wei Liang,
Qing He,
Qian Zhan,
Ya-Ping Chiu,
Yi-Chun Chen,
Ying-Hao Chu
Abstract:
In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, we went back to examine the existing oxide heterostructures and found the local conduction at the BiFeO3-CoFe2O4 vertical interface. In such hetero-nanostructure…
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In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, we went back to examine the existing oxide heterostructures and found the local conduction at the BiFeO3-CoFe2O4 vertical interface. In such hetero-nanostructure, the tubular interface, surrounding BiFeO3-CoFe2O4 vertical interface, can not only be the medium to the coupling between phases, but also be a new state of the matter. Our study demonstrates a novel concept on oxide interface design and opens a pathway alternative for the explorations of diverse functionalities in complex oxide interfaces.
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Submitted 7 August, 2012; v1 submitted 25 June, 2012;
originally announced June 2012.
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Magnetic Interaction between Surface Engineered Rare-earth Atomic Spins
Authors:
Chiung-Yuan Lin,
Jheng-Lian Li,
Yao-Hsien Hsieh,
B. A. Jones
Abstract:
We report the ab initio study of rare-earth adatoms (Gd) on an insulating surface. This surface is of interest because of previous studies by scanning tunneling microscopy showing spin excitations of transition metal adatoms. The present work is the first study of rare-earth spin-coupled adatoms, as well as the geometry effect of spin coupling, and the underlying mechanism of ferromagnetic couplin…
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We report the ab initio study of rare-earth adatoms (Gd) on an insulating surface. This surface is of interest because of previous studies by scanning tunneling microscopy showing spin excitations of transition metal adatoms. The present work is the first study of rare-earth spin-coupled adatoms, as well as the geometry effect of spin coupling, and the underlying mechanism of ferromagnetic coupling. The exchange coupling between Gd atoms on the surface is calculated to be antiferromagnetic in a linear geometry and ferromagnetic in a diagonal geometry, by considering their collinear spins and using the PBE+U exchange correlation. We also find the Gd dimers in these two geometries are similar to the nearest-neighbor (NN) and the next-NN Gd atoms in GdN bulk. We analyze how much direct exchange, superexchange, and RKKY interactions contribute to the exchange coupling for both geometries by additional first-principles calculations of related model systems.
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Submitted 2 March, 2012;
originally announced March 2012.
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Coexistence of isotropic s-wave and extended s-wave order parameters in FeSe as revealed by the low-temperature specific heat
Authors:
J. -Y. Lin,
Y. S. Hsieh,
D. A. Chareev,
A. N. Vasiliev,
Y. Parsons,
H. D. Yang
Abstract:
The comprehensive low-temperature specific heat C(T) data identify both an isotropic s-wave and an extended s-wave order parameters coexisting in a superconducting single crystal FeSe with Tc=8.11 K. The isotropic gap Δ0=1.33 meV on the hole Fermi sheets and the extended s-wave gap Δ=Δe(1+α*cos2_theta) with Δe=1.13 meV and α=0.78 on the electron Fermi sheets. The extended s-wave is rather anisotro…
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The comprehensive low-temperature specific heat C(T) data identify both an isotropic s-wave and an extended s-wave order parameters coexisting in a superconducting single crystal FeSe with Tc=8.11 K. The isotropic gap Δ0=1.33 meV on the hole Fermi sheets and the extended s-wave gap Δ=Δe(1+α*cos2_theta) with Δe=1.13 meV and α=0.78 on the electron Fermi sheets. The extended s-wave is rather anisotropic but the low energy quasiparticle excitations demonstrate no sign of the accidental nodes. The coefficient γ(H) manifesting the quasiparticle contribution to C is a non-linear function of the applied magnetic field H in the mixed state in accord with the anisotropic multi-order parameters.
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Submitted 31 December, 2011; v1 submitted 23 September, 2011;
originally announced September 2011.
