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Elastic properties and electronic structures of antiperovskite-type InNCo3 and InNNi3
Authors:
Z. F. Hou
Abstract:
We have performed the first-principles calculations to study the elasticity, electronic structure, and magnetism of InNCo3 and InNNi3. The independent elastic constants are derived from the second derivative of total energy as a function of strain, and the elastic modulus are predicted according to the Voigt-Reuss-Hill approximation. Our calculations show that the bulk modulus of InNCo3 is sligh…
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We have performed the first-principles calculations to study the elasticity, electronic structure, and magnetism of InNCo3 and InNNi3. The independent elastic constants are derived from the second derivative of total energy as a function of strain, and the elastic modulus are predicted according to the Voigt-Reuss-Hill approximation. Our calculations show that the bulk modulus of InNCo3 is slightly larger than that of InNNi3. For InNCo3 the ferromagnetic state is energetically preferable to the paramagnetic state, while the ground state of InNNi3 is a stable paramagnetic (non-magnetic) state. This is due to the different strength of 2p-3d hybridization for the N-Co and N-Ni atoms in InNCo3 and InNNi3.
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Submitted 5 February, 2010;
originally announced February 2010.
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Ab Initio Study on Electronic Structure of ZrB12 under High Hydrostatic Pressure
Authors:
Z. F. Hou
Abstract:
Using projector augmented wave approach within the generalized gradient approximation, we have studied the structural property and electronic structure of ZrB12. The calculated lattice constants and bulk modulus are in good agreement with the available experimental values. A detailed study of the electronic structure and the charge-density redistribution reveals the features of strong covalent B…
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Using projector augmented wave approach within the generalized gradient approximation, we have studied the structural property and electronic structure of ZrB12. The calculated lattice constants and bulk modulus are in good agreement with the available experimental values. A detailed study of the electronic structure and the charge-density redistribution reveals the features of strong covalent B-B and weak covalent Zr-B bondings in ZrB12. The states at the Fermi level mainly come from the $σ$-$p_{y}$ and $π$-$p_{z}$ orbitals of boron atoms, which are slightly hybridized with the $t_{2g}$-$d_{xz}$ and $t_{2g}$-$d_{yz}$ orbitals of Zr atoms. As the increased hydrostatic pressure on ZrB12, the total density of states at the Fermi level decreases.
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Submitted 7 July, 2006;
originally announced July 2006.
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First-Principles Study of Elasticity and Electronic Structure of Incompressible Osmium Diboride
Authors:
Z. F. Hou
Abstract:
Recently, osmium diboride (OsB2) has attracted considerable attention as an incompressible and hard material. We investigate the structural property, elastic constants, and electronic structure of orthorhombic OsB2 by the first-principles total energy calculations. The calculations are performed within the density functional framework using the projector augmented plane wave method. The structur…
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Recently, osmium diboride (OsB2) has attracted considerable attention as an incompressible and hard material. We investigate the structural property, elastic constants, and electronic structure of orthorhombic OsB2 by the first-principles total energy calculations. The calculations are performed within the density functional framework using the projector augmented plane wave method. The structural properties and bulk modulus of OsB2 compare well with experimental data. The nine independent elastic constants of orthorhombic OsB2 at zero-pressure have also been calculated by symmetry-general least-squares extraction method. We have analyzed the mechanical stability of orthorhombic OsB2 in term of the calculated elastic constants. A detailed study of the electronic structure and the charge-density redistribution reveal the features of strong covalent B-B and Os-B bondings in orthorhombic OsB2. The orbital hybridization and the characteristics of bonding orbitals in OsB2 are identified. Orthorhombic OsB2 exhibits a metallic character and the states at Fermi level mainly come from the $d$ orbital of Os atoms.
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Submitted 26 February, 2006; v1 submitted 11 January, 2006;
originally announced January 2006.
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Effects of Al Addition on the Native Defects in Hafnia
Authors:
Quan Li,
K. M. Koo,
W. M. Lau,
P. F. Lee,
J. Y. Dai,
Z. F. Hou,
X. G. Gong
Abstract:
Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al additio…
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Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al addition, that of the later one remains rather unaffected. Our first principles studies of the system attribute the two bands to the charged oxygen vacancy, and the oxygen interstitial related defect states of the HfO2, respectively. We further demonstrate that the observed evolution of the defect bands originates from the interaction in-between the added Al and the native defects of pure HfO2, which effectively passivates the VO+ induced mid-gap states but has little effect on other aspects of the electronic structure of the material.
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Submitted 26 June, 2005;
originally announced June 2005.
