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Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions
Authors:
Jonathan M. Goodwill,
Nitin Prasad,
Brian D. Hoskins,
Matthew W. Daniels,
Advait Madhavan,
Lei Wan,
Tiffany S. Santos,
Michael Tran,
Jordan A. Katine,
Patrick M. Braganca,
Mark D. Stiles,
Jabez J. McClelland
Abstract:
The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magn…
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The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.
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Submitted 6 May, 2022; v1 submitted 16 December, 2021;
originally announced December 2021.
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In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges
Authors:
Slavomír Nemšák,
Evgheni Strelcov,
Hongxuan Guo,
Brian D. Hoskins,
Tomáš Duchoň,
David N. Mueller,
Alexander Yulaev,
Ivan Vlassiouk,
Alexander Tselev,
Claus M. Schneider,
Andrei Kolmakov
Abstract:
Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as X-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), and scanning electron microscopy (SEM) to be applied to study solid-liquid and liquid-gas interfaces. Here, we focus on the experimental i…
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Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as X-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), and scanning electron microscopy (SEM) to be applied to study solid-liquid and liquid-gas interfaces. Here, we focus on the experimental implementation of PEEM to probe electrified graphene-liquid interfaces using electrolyte-filled microchannel arrays as a new sample platform. We demonstrate the important methodological advantage of these multi-sample arrays: they enable the combination of the wide field of view hyperspectral imaging capabilities from PEEM with the use of powerful data mining algorithms to reveal spectroscopic and temporal behaviors at the level of the individual microsample or the entire array ensemble
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Submitted 7 February, 2018;
originally announced February 2018.
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Stateful characterization of resistive switching TiO2 with electron beam induced currents
Authors:
Brian D. Hoskins,
Gina C. Adam,
Evgheni Strelcov,
Nikolai Zhitenev,
Andrei Kolmakov,
Dmitri B. Strukov,
Jabez J. McClelland
Abstract:
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By…
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Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By comparing beam-energy dependent electron beam induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam induced current microscopy it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.
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Submitted 30 October, 2017; v1 submitted 5 April, 2017;
originally announced April 2017.
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Three-Dimensional Stateful Material Implication Logic
Authors:
Gina C. Adam,
Brian D. Hoskins,
Mirko Prezioso,
Dmitri B. Strukov
Abstract:
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration, including highly scalable metal-oxide resistive switching devices (memristors), yet integration of logic circuits proves to be much more challenging. Here we demonstrat…
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Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration, including highly scalable metal-oxide resistive switching devices (memristors), yet integration of logic circuits proves to be much more challenging. Here we demonstrate memory and logic functionality in a monolithic three-dimensional circuit by adapting recently proposed memristor-based stateful material implication logic. Though such logic has been already implemented with a variety of memory devices, prohibitively large device variability in the most prospective memristor-based circuits has limited experimental demonstrations to simple gates and just a few cycles of operations. By developing a low-temperature, low-variability fabrication process, and modifying the original circuit to increase its robustness to device imperfections, we experimentally show, for the first time, reliable multi-cycle multi-gate material implication logic operation within a three-dimensional stack of monolithically integrated memristors. The direct data manipulation in three dimensions enables extremely compact and high-throughput logic-in-memory computing and, remarkably, presents a viable solution for the Feynman grand challenge of implementing an 8-bit adder at the nanoscale.
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Submitted 9 September, 2015;
originally announced September 2015.
