Showing 1–1 of 1 results for author: Horsche, A

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Authors: R. Jany, M. Breitschaft, G. Hammerl, A. Horsche, C. Richter, S. Paetel, J. Mannhart, N. Stucki, N. Reyren, S. Gariglio, P. Zubko, A. D. Caviglia, J. -M. Triscone

Abstract: Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. △ Less

Submitted 6 May, 2010; originally announced May 2010.