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Silicon oxide nanoparticles grown on graphite by codeposition of the atomic constituents
Authors:
Steffen Friis Holleufer,
Alfred Hopkinson,
Duncan S. Sutherland,
Zheshen Li,
Jeppe V. Lauritsen,
Liv Hornekær,
Andrew Cassidy
Abstract:
Nanoscale silicate dust particles are the most abundant refractory component observed in the interstellar medium and thought to play a key role in catalysing the formation of complex organic molecules in the star forming regions of space. We present a method to synthesise a laboratory analogue of nanoscale silicate dust particles on highly oriented pyrolytic graphite (HOPG) substrates by co-deposi…
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Nanoscale silicate dust particles are the most abundant refractory component observed in the interstellar medium and thought to play a key role in catalysing the formation of complex organic molecules in the star forming regions of space. We present a method to synthesise a laboratory analogue of nanoscale silicate dust particles on highly oriented pyrolytic graphite (HOPG) substrates by co-deposition of the atomic constituents. The resulting nanoparticulate films are sufficiently thin and conducting to allow for surface science investigations, and are characterised here, in situ under UHV, using X-ray photoelectron spectroscopy, near-edge X-ray absorption atomic fine spectroscopy and scanning tunnelling microscopy, and, ex situ, using scanning electron microscopy. We compare SiO$_{x}$ film growth with and without the use of atomic O beams during synthesis and conclude that exposure of the sample to atomic O leads to homogeneous films of interconnected nanoparticle networks. The networks covers the graphite substrate and demonstrate superior thermal stability, up to 1073 K, when compared to oxides produced without exposure to atomic O. In addition, control over the flux of atomic O during growth allows for control of the average oxidation state of the film produced. Photoelectron spectroscopy measurements demonstrate that fully oxidised films have an SiO$_{2}$ stoichiometry very close to bulk SiO$_{2}$ and scanning tunnelling microscopy images show the basic cluster building unit to have a radius of approximately 2.5 nm. The synthesis of SiO$_{x}$ films with adjustable stoichiometry and suitable for surface science experiments that require conducting substrates will be of great interest to the astrochemistry community, and will allow for nanoscale-investigation of the chemical processes thought to be catalysed at the surface of dust grains in space.
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Submitted 19 February, 2025;
originally announced February 2025.
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High Crystallinity and Decoupling of Graphene on a Metal: Reduced Coulomb Screening and Tunable pn-Junctions
Authors:
Søren Ulstrup,
Mie Andersen,
Marco Bianchi,
Lucas Barreto,
Bjørk Hammer,
Liv Hornekær,
Philip Hofmann
Abstract:
High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy and density functional theory we demonstrate that oxygen intercalated epitaxial graphene on…
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High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy and density functional theory we demonstrate that oxygen intercalated epitaxial graphene on Ir(111) has high structural quality, is quasi free-standing, and shows signatures of many-body interactions. Using this system as a template, we show that tunable pn-junctions can be patterned by adsorption and intercalation of rubidium, and that the n-doped graphene regions exhibit a reduced Coulomb screening via enhanced electron-plasmon coupling. These findings are central for understanding and tailoring the properties of graphene-metal contacts e.g. for realizing quantum tunneling devices.
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Submitted 24 April, 2014;
originally announced April 2014.
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Electron-phonon coupling in quasi free-standing graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Marco Bianchi,
Richard Hatch,
Dandan Guan,
Federico Mazzola,
Liv Hornekær,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investig…
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Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.
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Submitted 5 October, 2012;
originally announced October 2012.
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High-temperature behaviour of supported graphene: electron-phonon coupling and substrate-induced doping
Authors:
Søren Ulstrup,
Marco Bianchi,
Richard Hatch,
Dandan Guan,
Alessandro Baraldi,
Dario Alfè,
Liv Hornekær,
Philip Hofmann
Abstract:
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-depen…
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One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-dependent mobility reduction could be explained by scattering of carriers with phonons, but this is expected to be weak for pristine, weakly-doped graphene. The mobility reduction has therefore been ascribed to the interaction with confined ripples or substrate phonons. Here we study the temperature-dependent electronic structure of supported graphene by angle-resolved photoemission spectroscopy, a technique that can reveal the origin of the phenomena observed in transport measurements. We show that the electron-phonon coupling for weakly-doped, supported graphene on a metal surface is indeed extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier type and density that is relevant for transport. Using ab initio molecular dynamics simulations, we show that these changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.
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Submitted 9 March, 2012;
originally announced March 2012.
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Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering
Authors:
Richard C. Hatch,
Marco Bianchi,
Dandan Guan,
Shining Bao,
Jianli Mi,
Bo Brummerstedt Iversen,
Louis Nilsson,
Liv Hornekaer,
Philip Hofmann
Abstract:
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitu…
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The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.
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Submitted 26 April, 2011;
originally announced April 2011.
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Structure and stability of small H clusters on graphene
Authors:
Zeljko Sljivancanin,
Mie Andersen,
Liv Hornekaer,
Bjork Hammer
Abstract:
The structure and stability of small hydrogen clusters adsorbed on graphene is studied by means of Density Functional Theory (DFT) calculations. Clusters containing up to six H atoms are investigated systematically -- the clusters having either all H atoms on one side of the graphene sheet (\textit{cis}-clusters) or having the H atoms on both sides in an alternating manner (\textit{trans}-cluster)…
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The structure and stability of small hydrogen clusters adsorbed on graphene is studied by means of Density Functional Theory (DFT) calculations. Clusters containing up to six H atoms are investigated systematically -- the clusters having either all H atoms on one side of the graphene sheet (\textit{cis}-clusters) or having the H atoms on both sides in an alternating manner (\textit{trans}-cluster). The most stable cis-clusters found have H atoms in ortho- and para-positions with respect to each other (two H's on neighboring or diagonally opposite carbon positions within one carbon hexagon) while the most stable trans-clusters found have H atoms in ortho-trans-positions with respect to each other (two H's on neighboring carbon positions, but on opposite sides of the graphene). Very stable trans-clusters with 13-22 H atoms were identified by optimizing the number of H atoms in ortho-trans-positions and thereby the number of closed, H-covered carbon hexagons. For the cis-clusters, the associative H$_2$ desorption was investigated. Generally, the desorption with the lowest activation energy proceeds via para-cis-dimer states, i.e.\ involving somewhere in the H clusters two H atoms that are positioned on opposite sites within one carbon hexagon. H$_2$ desorption from clusters lacking such H pairs is calculated to occur via hydrogen diffusion causing the formation of para-cis-dimer states. Studying the diffusion events showed a strong dependence of the diffusion energy barriers on the reaction energies and a general odd-even dependence on the number of H atoms in the cis-clusters.
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Submitted 28 February, 2011; v1 submitted 24 February, 2011;
originally announced February 2011.
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Electron-phonon coupling in potassium-doped graphene: Angle-resolved photoemission spectroscopy
Authors:
M. Bianchi,
E. D. L. Rienks,
S. Lizzit,
A. Baraldi,
R. Balog,
L. Hornekaer,
Ph. Hofmann
Abstract:
The electron-phonon coupling in potassium-doped graphene on Ir(111) is studied via the renormalization of the pi* band near the Fermi level, using angle-resolved photoemission spectroscopy. The renormalization is found to be fairly weak and almost isotropic, with a mass enhancement parameter of lambda= 0.28(6) for both the K-M and the K-G direction. These results are found to agree well with rec…
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The electron-phonon coupling in potassium-doped graphene on Ir(111) is studied via the renormalization of the pi* band near the Fermi level, using angle-resolved photoemission spectroscopy. The renormalization is found to be fairly weak and almost isotropic, with a mass enhancement parameter of lambda= 0.28(6) for both the K-M and the K-G direction. These results are found to agree well with recent first principles calculations.
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Submitted 16 December, 2009; v1 submitted 21 October, 2009;
originally announced October 2009.
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Kinetic Monte Carlo Studies of Hydrogen Abstraction from Graphite
Authors:
H. M. Cuppen,
L. Hornekaer
Abstract:
We present Monte Carlo simulations on Eley-Rideal abstraction reactions of atomic hydrogen chemisorbed on graphite. The results are obtained via a hybrid approach where energy barriers derived from density functional theory calculations are used as input to Monte Carlo simulations. By comparing with experimental data, we discriminate between contributions from different Eley-Rideal mechanisms. A…
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We present Monte Carlo simulations on Eley-Rideal abstraction reactions of atomic hydrogen chemisorbed on graphite. The results are obtained via a hybrid approach where energy barriers derived from density functional theory calculations are used as input to Monte Carlo simulations. By comparing with experimental data, we discriminate between contributions from different Eley-Rideal mechanisms. A combination of two different mechanisms yields good quantitative and qualitative agreement between the experimentally derived and the simulated Eley-Rideal abstraction cross sections and surface configurations. These two mechanisms include a direct Eley-Rideal reaction with fast diffusing H atoms and a dimer mediated Eley-Rideal mechanism with increased cross section at low coverage. Such a dimer mediated Eley-Rideal mechanism has not previously been proposed and serves as an alternative explanation to the steering behavior often given as the cause of the coverage dependence observed in Eley-Rideal reaction cross sections.
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Submitted 1 July, 2008;
originally announced July 2008.
