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Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Authors:
Connor P Horn,
Christina Wicker,
Antoni Wellisz,
Cyrus Zeledon,
Pavani Vamsi Krishna Nittala,
F Joseph Heremans,
David D Awschalom,
Supratik Guha
Abstract:
We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an ex…
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We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films in the tens-of-microns thickness range are highly desirable to allow for substrate reuse and integration of the separated films. In this work we utilize novel approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness material spalled to date. Additionally, we demonstrate substrate re-use, bonding of the spalled films to carrier substrates, and explore the spin coherence of the spalled films. In preliminary studies we are able to achieve coherent spin control of neutral divacancy ($VV^{0}$) qubit ensembles and measure a quasi-bulk spin $T_{2}$ of 79.7 $μ$s in such spalled films.
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Submitted 30 June, 2024; v1 submitted 30 April, 2024;
originally announced April 2024.
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Cryogenic hybrid magnonic circuits based on spalled YIG thin films
Authors:
Jing Xu,
Connor Horn,
Yu Jiang,
Amin Pishehvar,
Xinhao Li,
Daniel Rosenmann,
Xu Han,
Miguel Levy,
Supratik Guha,
Xufeng Zhang
Abstract:
Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their b…
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Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibits anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling, and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing.
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Submitted 18 December, 2024; v1 submitted 17 December, 2023;
originally announced December 2023.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
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Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities
Authors:
Alan M. Dibos,
Michael T. Solomon,
Sean E. Sullivan,
Manish K. Singh,
Kathryn E. Sautter,
Connor P. Horn,
Gregory D. Grant,
Yulin Lin,
Jianguo Wen,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to d…
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Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
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Submitted 20 April, 2022;
originally announced April 2022.
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Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
Authors:
Yang Xu,
Connor Horn,
Jiacheng Zhu,
Yanhao Tang,
Liguo Ma,
Lizhong Li,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on sp…
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Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor. It relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their environmental dielectric-dependent electronic band structure. We observe optical transitions between moiré bands in monolayer WSe$_{2}$ when it is placed close to small angle-misaligned graphene on hexagonal boron nitride. The moiré bands are a result of long-range Coulomb interactions, strongly gate-tunable, and can have versatile superlattice symmetries independent of the crystal lattice of the host material. Our result also demonstrates that monolayer semiconductors are sensitive local dielectric sensors.
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Submitted 22 July, 2020;
originally announced July 2020.
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Evolutionary Minority Games: the benefits of imitation
Authors:
Richard Metzler,
Christian Horn
Abstract:
In the original Evolutionary Minority Game, a segregation into two populations with opposing preferences is observed under many circumstances. We show that this segregation becomes more pronounced and more robust if the dynamics are changed slightly, such that strategies with above-average fitness become more frequent. Similar effects occur also for a generalization of the EMG to more than two c…
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In the original Evolutionary Minority Game, a segregation into two populations with opposing preferences is observed under many circumstances. We show that this segregation becomes more pronounced and more robust if the dynamics are changed slightly, such that strategies with above-average fitness become more frequent. Similar effects occur also for a generalization of the EMG to more than two choices, and for evolutionary dynamics of a different stochastic strategy for the Minority Game.
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Submitted 19 December, 2002;
originally announced December 2002.
