Showing 1–15 of 15 results for author: Horibe, Y

Growth and anisotropy evaluation of NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals

Authors: Masanori Nagao, Akira Miura, Yoichi Horibe, Yuki Maruyama, Satoshi Watauchi, Yoshihiko Takano, Isao Tanaka

Abstract: NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition… ▽ More NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe$_3$ single crystals grown from the stoichiometry composition (NbBiSe$_3$) was 2.3 K. Sharp decreases in electric resistivity and magnetic susceptibility at approximately 3 K suggested a possible superconducting transition temperature of NbBiSe$_3$. The normal-state anisotropy values of grown NbBiS$_3$ and NbBiSe$_3$ single crystals were 2.2-2.4 and 1.5-1.6, respectively. △ Less

Submitted 21 August, 2020; originally announced August 2020.

Comments: 4 figures + 3 figures (Supplementary Materials)

Journal ref: Solid State Communications 321 (2020) 114051

Charged domain walls and crystallographic microstructures in hybrid improper ferroelectric Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$

Authors: Hiroshi Nakajima, Koji Shigematsu, Yoichi Horibe, Shigeo Mori, Yasukazu Murakami

Abstract: The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the [001] axis, the wavy charged domain walls are observed over a wide range ($>$5 $μ$m). In contrast, short charged-domain-wall fragments (from 10 to 200 nm long) oc… ▽ More The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the [001] axis, the wavy charged domain walls are observed over a wide range ($>$5 $μ$m). In contrast, short charged-domain-wall fragments (from 10 to 200 nm long) occur because they are intercepted and truncated by the conventional 180$^°$ domain walls. These results reveal the unusual charged domain structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ and will be useful for understanding their formation process. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 18 pages, 6 figures

Journal ref: MATERIALS TRANSACTIONS 60, 2103 (2019)

Color theorems, chiral domain topology and magnetic properties of FexTaS2

Authors: Yoichi Horibe, Junjie Yang, Yong-Heum Cho, Xuan Luo, Sung Baek Kim, Yoon Seok Oh, Fei-Ting Huang, Toshihiro Asada, Makoto Tanimura, Dalyoung Jeong, Sang-Wook Cheong

Abstract: Common mathematical theory can have profound applications in understanding real materials. The intrinsic connection between aperiodic orders observed in the Fibonacci sequence, Penrose tiling, and quasicrystals is a well-known example. Another example is the self-similarity in fractals and dendrites. From transmission electron microscopy experiments, we found that FexTaS2 crystals with x=1/4 and 1… ▽ More Common mathematical theory can have profound applications in understanding real materials. The intrinsic connection between aperiodic orders observed in the Fibonacci sequence, Penrose tiling, and quasicrystals is a well-known example. Another example is the self-similarity in fractals and dendrites. From transmission electron microscopy experiments, we found that FexTaS2 crystals with x=1/4 and 1/3 exhibit complicated antiphase and chiral domain structures related to ordering of intercalated Fe ions with 2a*2a and sqrt3a*sqrt3a superstructures, respectively. These complex domain patterns are found to be deeply related with the four color theorem, stating that four colors are sufficient to identify the countries on a planar map with proper coloring, and its variations for two-step proper coloring. Furthermore, the domain topology is closely relevant to their magnetic properties. Our discovery unveils the importance of understanding the global topology of domain configurations in functional materials. △ Less

Submitted 22 May, 2014; originally announced May 2014.

Unfolding of vortices into topological stripes in a multiferroic material

Authors: Xueyun Wang, Maxim Mostovoy, Myung-Geun Han, Yoichi Horibe, T. Aoki, Yimei Zhu, Sang-Wook Cheong

Abstract: Multiferroic hexagonal RMnO3 (R=rare earths) crystals exhibit dense networks of vortex lines at which six domain walls merge. While the domain walls can be readily moved with an applied electric field, the vortex cores were so far impossible to control. Our experiments demonstrate that shear strain induces a Magnus-type force pulling vortices and antivortices in opposite directions and unfolding t… ▽ More Multiferroic hexagonal RMnO3 (R=rare earths) crystals exhibit dense networks of vortex lines at which six domain walls merge. While the domain walls can be readily moved with an applied electric field, the vortex cores were so far impossible to control. Our experiments demonstrate that shear strain induces a Magnus-type force pulling vortices and antivortices in opposite directions and unfolding them into a topological stripe domain state. We discuss the analogy between this effect and the current-driven dynamics of vortices in superconductors and superfluids. △ Less

Submitted 16 May, 2014; originally announced May 2014.

Transferring MBE-grown topological insulator films to arbitrary substrates and Metal-insulator transition via Dirac gap

Authors: Namrata Bansal, Myung Rae Cho, Matthew Brahlek, Nikesh Koirala, Yoichi Horibe, Jing Chen, Weida Wu, Yun Daniel Park, Seongshik Oh

Abstract: Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaini… ▽ More Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity. △ Less

Submitted 25 February, 2014; originally announced February 2014.

Comments: 12 pages, 4 figures

Evolution of the domain topology in a ferroelectric

Authors: S. C. Chae, Y. Horibe, D. Y. Jeong, N. Lee, K. Iida, M. Tanimura, S. -W. Cheong

Abstract: Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of… ▽ More Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of crystals with a self-poling tendency near surfaces reveal that the partial dislocation (i.e., wall-wall) interaction, not the interaction between vortices and antivortices, is primarily responsible for topological condensation through the macroscopic breaking of the Z2-symmetry. △ Less

Submitted 31 March, 2013; originally announced April 2013.

Is hexagonal InMnO3 ferroelectric?

Authors: F. -T. Huang, X. Wang, Y. S. Oh, K. Kurushima, S. Mori, Y. Horibe, S. -W. Cheong

Abstract: The presence of ferroelectricity in hexagonal (h-)InMnO3 has been highly under debate. The results of our comprehensive experiments of low-temperature (T) polarization, TEM and HAADF-STEM on well-controlled h-InMnO3 reveal that the ground state is ferroelectric with P6_3cm symmetry, but a non-ferroelectric P-3c1 state exists at high T, and can be quenched to room T. We also found that the ferroele… ▽ More The presence of ferroelectricity in hexagonal (h-)InMnO3 has been highly under debate. The results of our comprehensive experiments of low-temperature (T) polarization, TEM and HAADF-STEM on well-controlled h-InMnO3 reveal that the ground state is ferroelectric with P6_3cm symmetry, but a non-ferroelectric P-3c1 state exists at high T, and can be quenched to room T. We also found that the ferroelectric P6_3cm state of h-InMnO3 exhibits the domain configuration of topological vortices, as has been observed in h-REMnO3 (RE=rare earths). △ Less

Submitted 3 April, 2013; v1 submitted 22 March, 2013; originally announced March 2013.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 87 (2013) 184109

Anionic depolymerization transition in IrTe2

Authors: Yoon Seok Oh, J. J. Yang, Y. Horibe, S. -W. Cheong

Abstract: Selenium (Se) substitution drastically increases the transition temperature of iridium ditelluride (IrTe$_{2}$) to a diamagnetic superstructure from 278 K to 560 K. Transmission electron microscopy experiments revealed that this enhancement is accompanied by the evolution of non-sinusoidal structure modulations from $q = 1/5(10\bar{1})$- to $q = 1/6(10\bar{1})$-types. These comprehensive results a… ▽ More Selenium (Se) substitution drastically increases the transition temperature of iridium ditelluride (IrTe$_{2}$) to a diamagnetic superstructure from 278 K to 560 K. Transmission electron microscopy experiments revealed that this enhancement is accompanied by the evolution of non-sinusoidal structure modulations from $q = 1/5(10\bar{1})$- to $q = 1/6(10\bar{1})$-types. These comprehensive results are consistent with the concept of the destabilization of polymeric Te-Te bonds at the transition, the temperature of which is increased by chemical and hydrostatic pressure and by the substitution of Te with the more electronegative Se. This temperature-induced depolymerization transition in IrTe$_{2}$ is unique in crystalline inorganic solids. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 5 pages, 4 figures, Phys. Rev. Lett. in press

Journal ref: Phys. Rev. Lett. 110, 127209 (2013)

Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs

Authors: S. C. Chae, N. Lee, Y. Horibe, M. Tanimura, S. Mori, B. Gao, S. Carr, S. -W. Cheong

Abstract: We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to… ▽ More We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to vortex-antivortex domain patterns through a freezing process when crystals cross Tc even though the phase transition appears not to be Kosterlitz-Thouless-type. The experimental systematics are compared with the results of our six-state clock model simulation and also the Kibble-Zurek Mechanism for trapped topological defects. △ Less

Submitted 23 March, 2012; originally announced March 2012.

Conduction of topologically-protected charged ferroelectric domain walls

Authors: Weida Wu, Y. Horibe, N. Lee, S. -W. Cheong, J. R. Guest

Abstract: We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO3 protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and kelvin-probe force microscopy at low temperatures. In addition to previously observed Schottky-like rectification at low bias [Phys. Rev. Lett., 104, 217601 (20… ▽ More We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO3 protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and kelvin-probe force microscopy at low temperatures. In addition to previously observed Schottky-like rectification at low bias [Phys. Rev. Lett., 104, 217601 (2010)], conductance spectra reveal that negatively charged tail-to-tail walls exhibit enhanced conduction at high forward bias, while positively charged head-to-head walls exhibit suppressed conduction at high reverse bias. Our results pave the way for understanding the semiconducting properties of the domains and domain walls in small-gap ferroelectrics. △ Less

Submitted 28 December, 2011; originally announced December 2011.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Lett. 108, 077203 (2012)

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Authors: Namrata Bansal, Yong Seung Kim, Eliav Edrey, Matthew Brahlek, Yoichi Horibe, Keiko Iida, Makoto Tanimura, Guo-Hong Li, Tian Feng, Hang-Dong Lee, Torgny Gustafsson, Eva Andrei, Seongshik Oh

Abstract: Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to… ▽ More Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by RHEED (Reflection High Energy Electron Diffraction), TEM (Transmission Electron Microscopy) and XRD (X-Ray Diffraction). The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer. △ Less

Submitted 19 April, 2011; v1 submitted 18 April, 2011; originally announced April 2011.

Comments: 20 pages, 7 figures

Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

Authors: Yong Seung Kim, Matthew Brahlek, Namrata Bansal, Eliav Edrey, Gary A. Kapilevich, Keiko Iida, Makoto Tanimura, Yoichi Horibe, Sang-Wook Cheong, Seongshik Oh

Abstract: We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick li… ▽ More We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states. △ Less

Submitted 11 May, 2011; v1 submitted 5 April, 2011; originally announced April 2011.

Comments: 16 pages, 4 figures

Journal ref: Physical Review B 84, 073109 (2011)

Universality in one dimensional orbital wave ordering in spinel and related compounds: an experimental perspective

Authors: M. Croft, V. Kiryukhin, Y. Horibe, S-W. Cheong

Abstract: Recent state-of-the-art crystallographic investigations of transition metal spinel compounds have revealed that the d- orbital charge carriers undergo ordering transitions with the formation of local "molecular bonding" units such as dimers in MgTi2O4, octomers in CuIr2S4, and heptamers in AlV2O4. Herein, we provide a unifying scheme involving one- dimensional orbital wave ordering applicable to… ▽ More Recent state-of-the-art crystallographic investigations of transition metal spinel compounds have revealed that the d- orbital charge carriers undergo ordering transitions with the formation of local "molecular bonding" units such as dimers in MgTi2O4, octomers in CuIr2S4, and heptamers in AlV2O4. Herein, we provide a unifying scheme involving one- dimensional orbital wave ordering applicable to all of these spinels. The relative phase of the orbitals in the chains is shown to be crucial to the formation of different local units, and thus both the amplitude and phase of the orbital wave play important roles. Examination of Horibe et al.'s [1] structure for AlV2O4 serves as the vehicle for developing the general behavior for such orbital wave ordering. Ordered AlV2O4 will be seen to organize into three equivalent chains in 2D Kagome planes coupled so as to form units of three dimer bonds. Three additional equivalent chains manifest a more complex tetramerization with three different charge states and two different bonding schemes. The orbital wave ordering scheme developed is extended to other spinel and related compounds with local triangular transition metal coordination and partial filling of the t2g-d orbitals. △ Less

Submitted 20 March, 2007; v1 submitted 21 December, 2006; originally announced December 2006.

Inhomogeneous CuO_{6} Tilt Distribution and Charge/Spin Correlations in La_{2-x-y}Nd_{y}Sr_{x}CuO$_{4} around commensurate hole concentration

Authors: A. Gozar, B. S. Dennis, T. Siegrist, Y. Horibe, G. Blumberg

Abstract: Phononic and magnetic Raman scattering are studied in La$_{2-x-y}$Nd$_{y}$Sr$_{x}$CuO$_{4}$ with three doping concentrations: x ~ 1/8, y = 0; x ~ 1/8, y = 0.4; and x = 0.01, y = 0. We observe strong disorder in the tilt pattern of the CuO_{6} octahedra in both the orthorhombic and tetragonal phases which persist down to 10 K and are coupled to bond disorder in the cation layers around 1/8 doping… ▽ More Phononic and magnetic Raman scattering are studied in La$_{2-x-y}$Nd$_{y}$Sr$_{x}$CuO$_{4}$ with three doping concentrations: x ~ 1/8, y = 0; x ~ 1/8, y = 0.4; and x = 0.01, y = 0. We observe strong disorder in the tilt pattern of the CuO_{6} octahedra in both the orthorhombic and tetragonal phases which persist down to 10 K and are coupled to bond disorder in the cation layers around 1/8 doping independent of Nd concentration. The weak magnitude of existing charge/spin modulations in the Nd doped structure does not allow us to detect the specific Raman signatures on lattice dynamics or two-magnon scattering around 2200 cm-1. △ Less

Submitted 14 August, 2003; originally announced August 2003.

Comments: to be published in Phys. Rev. B

X-ray-induced disordering of the dimerization pattern and apparent low-temperature enhancement of lattice symmetry in spinel CuIr$_2$S$_4$

Authors: H. Ishibashi, T. Y. Koo, Y. S. Hor, A. Borissov, Y. Horibe, P. G. Radaelli, S-W. Cheong, V. Kiryukhin

Abstract: At low temperatures, spinel CuIr$_2$S$_4$ is a charge-ordered spin-dimerized insulator with triclinic lattice symmetry. We find that x-rays induce a structural transition in which the local triclinic structure is preserved, but the average lattice symmetry becomes tetragonal. These structural changes are accompanied by a thousandfold reduction in the electrical resistivity. The transition is per… ▽ More At low temperatures, spinel CuIr$_2$S$_4$ is a charge-ordered spin-dimerized insulator with triclinic lattice symmetry. We find that x-rays induce a structural transition in which the local triclinic structure is preserved, but the average lattice symmetry becomes tetragonal. These structural changes are accompanied by a thousandfold reduction in the electrical resistivity. The transition is persistent, but the original state can be restored by thermal annealing. We argue that x-ray irradiation disorders the lattice dimerization pattern, producing a state in which the orientation of the dimers is preserved, but the translational long-range order is destroyed. △ Less

Submitted 3 September, 2002; originally announced September 2002.

Comments: 5 pages, 4 embedded figures