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Electronic structure and thermoelectric properties of epitaxial Sc1-xVxNy thin films grown on MgO(001)
Authors:
Susmita Chowdhury,
Niraj Kumar Singh,
Sanath Kumar Honnali,
Grzegorz Greczynski,
Per Eklund,
Arnaud le Febvrier,
Martin Magnuson
Abstract:
The electronic structure of Sc1-xVxNy epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on Sc0.75V0.25N indicate that V 3d states lie in the band gap of the parent ScN compound in the vicinity of the Fermi level. Thus, theoretically the presence of light (dispersive) bands at the Γ-point wi…
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The electronic structure of Sc1-xVxNy epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on Sc0.75V0.25N indicate that V 3d states lie in the band gap of the parent ScN compound in the vicinity of the Fermi level. Thus, theoretically the presence of light (dispersive) bands at the Γ-point with band multiplicity is expected to lead to lower electrical resistivity while flat (heavy) bands at X-W-K symmetry points are associated with higher Seebeck coefficient than that of ScN. With this aim, epitaxial Sc1-xVxNy thin film samples were deposited on MgO(001) substrates. All the samples showed N substoichiometry and pseudocubic crystal structure. The N-vacancy-induced states were visible in the Sc 2p XAS spectra. The reference ScN and Sc1-xVxNy samples up to x = 0.12 were n type, exhibiting carrier concentration of 1021 cm-3, typical for degenerate semiconductors. For the highest V alloying of x = 0.15, holes became the majority charge carrier as indicated by the positive Seebeck coefficient. The underlying electronic structure and bonding mechanism in Sc1-xVxNy influence the electrical resistivity, Seebeck coefficient, and Hall effect. Thus, the work contributes to the fundamental understanding of the correlated defects and thermoelectric properties to the electronic structure in Sc-N system with V alloying.
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Submitted 1 April, 2024;
originally announced April 2024.
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Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films
Authors:
Niraj Kumar Singh,
Victor Hjort,
Sanath Kumar Honnali,
Davide Gambino,
Arnaud le Febvrier,
Ganpati Ramanath,
Björn Alling,
Per Eklund
Abstract:
CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient…
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CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient α, and hence the thermoelectric power factor α^2σ. To investigate this possibility, epitaxial CrWxNz films were grown on c-plane sapphire by dc-magnetron sputtering. However, even films with the lowest W concentration (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high α. Nevertheless, the films exhibit a sizeable power factor of α^2σ~ 4.7 x 10-4 Wm-1K-2 due to high σ~ 700 Scm-1, and a moderate α~ -25 ~{^^^^00b5}V/K. Increasing h-Cr2N fractions in the 0.03 < x \le 0.19 range monotonically increases σ, but severely diminishes αleading to two orders of magnitude decrease in α^2σ. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN is important for realizing high thermoelectric power factor in CrWxNz alloy films.
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Submitted 25 June, 2024; v1 submitted 4 November, 2023;
originally announced November 2023.
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Enhanced Thermoelectric Properties By Embedding Fe Nanoparticles Into CrN Films For Energy Harvesting Applications
Authors:
Daria Pankratova,
Khabib Yusupov,
Alberto Vomiero,
Sanath Kumar Honnali,
Robert Boyd,
Sebastian Ekeroth,
Ulf Helmersson,
Clio Azina,
Arnaud le Febvrier
Abstract:
Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the F…
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Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the Fe nanoparticles remained intact without intermixing with the matrix. The electrical and thermal transport properties of the nanocomposites were investigated and compared to a monolithic CrN film. The measured thermoelectric properties revealed an increase in the Seebeck coefficient, with a decrease of hall carrier concentration and an increase of the electron mobility which could be explained by energy filtering by internal phases created at the NP/matrix interface. The thermal conductivity of the final nanocomposite was reduced from 4.8 W m-1K-1 to a minimum of 3.0 W m-1K-1 W. This study shows prospects for the nanocomposite synthesis process using nanoparticles and its use in improving the thermoelectric properties of coatings.
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Submitted 8 January, 2024; v1 submitted 15 April, 2023;
originally announced April 2023.
