Showing 1–25 of 25 results for author: Hong, M

1/ f noise and two-level systems in MBE-grown Al thin films

Authors: Shouray Kumar Sahu, Yen-Hsun Glen Lin, Kuan-Hui Lai, Chao-Kai Cheng, Chun-Wei Wu, Elica Anne Heredia, Ray-Tai Wang, Yen-Hsiang Lin, Juainai Kwo, Minghwei Hong, Juhn-Jong Lin, Sheng-Shiuan Yeh

Abstract: Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We studied the energy distributions of TLS densities, g(E), in 10-nm-thick MBE-grown and electron-beam evaporated Al films through 1/f noise measurements between… ▽ More Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We studied the energy distributions of TLS densities, g(E), in 10-nm-thick MBE-grown and electron-beam evaporated Al films through 1/f noise measurements between 80 and 360 K. At 300 K, the noise magnitudes in MBE-grown films are about three times lower than in the electron-beam evaporated films, corresponding to the g(E) values about ten times lower in the former than in the latter. Compared with previously established observations, we identified that the 1/f noise was generated by thermally activated TLS at grain boundaries. △ Less

Submitted 2 July, 2025; originally announced July 2025.

Comments: 6 pages, 5 figures

Room temperature quantum metric effect in TbMn6Sn6

Authors: Weiyao Zhao, Kaijian Xing, Yufei Zhao, Lei Chen, Min Hong, Yuefeng Yin, Yang Liu, Khoa Dang Le, Jacob Gayles, Fang Tang, Yong Fang, Binghai Yan, Julie Karel

Abstract: Quantum geometry, including Berry curvature and the quantum metric, of the electronic Bloch bands has been studied via nonlinear responses in topological materials. Naturally, these material systems with intrinsic strong nonlinear responses also form the key component in nonlinear electronic devices. However, the previous reported quantum geometry effects are mainly observed at cryogenic temperatu… ▽ More Quantum geometry, including Berry curvature and the quantum metric, of the electronic Bloch bands has been studied via nonlinear responses in topological materials. Naturally, these material systems with intrinsic strong nonlinear responses also form the key component in nonlinear electronic devices. However, the previous reported quantum geometry effects are mainly observed at cryogenic temperatures, hindering their application in practical devices. Here we report the tuneable strong room-temperature second-harmonic transport response in a quantum magnet, TbMn6Sn6, which is governed by the quantum metric and can be tuned with applied magnetic fields. We show that around room temperature, which is close to the spontaneous spin-reorientation transition, the magnetic configurations, and therefore the related symmetry breaking phases, are easily controlled via magnetic fields. Our results also show that manipulation of the symmetries of the magnetic structure presents an effective route to tuneable quantum-geometry-based devices. △ Less

Submitted 12 June, 2025; v1 submitted 18 November, 2024; originally announced November 2024.

Comments: 12 pages, 3 figures

Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet

Authors: Jyun-Fong Wong, Ko-Hsuan Mandy Chen, Jui-Min Chia, Zih-Ping Huang, Sheng-Xin Wang, Pei-Tze Chen, Lawrence Boyu Young, Yen-Hsun Glen Lin, Shang-Fan Lee, Chung-Yu Mou, Minghwei Hong, Jueinai Kwo

Abstract: Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be fully understood. In this work, we report a large THE of ~10 ohm (~4 micro-ohm*cm) at 2 K with an e… ▽ More Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be fully understood. In this work, we report a large THE of ~10 ohm (~4 micro-ohm*cm) at 2 K with an electrically reversible sign in a top-gated 4 nm TI (Bi0.3Sb0.7)2Te3 (BST) grown on a ferrimagnetic insulator (FI) europium iron garnet (EuIG). Temperature, external magnetic field angle, and top gate bias dependences of magnetotransport properties were investigated and consistent with a skyrmion-driven THE. Most importantly, a sign change in THE was discovered as the Fermi level was tuned from the upper to the lower parts of the gapped Dirac cone and vice versa. This discovery is anticipated to impact technological applications in ultralow power skyrmion-based spintronics. △ Less

Submitted 13 April, 2023; v1 submitted 31 December, 2022; originally announced January 2023.

Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet

Authors: Jong Hyuk Kim, Hyun Jun Shin, Mi Kyung Kim, Jae Min Hong, Ki Won Jeong, Jin Seok Kim, Kyungsun Moon, Nara Lee, Young Jai Choi

Abstract: The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the potential of implementing spintronic functionality in non-collinear antiferromagnets has not been clarified thus far. Here, we propose an AFM helimagnet of EuCo2… ▽ More The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the potential of implementing spintronic functionality in non-collinear antiferromagnets has not been clarified thus far. Here, we propose an AFM helimagnet of EuCo2As2 as a novel single-phase spintronic material that exhibits a remarkable sign reversal of anisotropic magnetoresistance (AMR). The contrast in the AMR arises from two electrically distinctive magnetic phases with spin reorientation driven by magnetic field lying on the easy-plane, which switches the sign of the AMR from positive to negative. Further, various AFM memory states associated with the evolution of the spin structure under magnetic fields were identified theoretically, based on an easy-plane anisotropic spin model. These results reveal that non-collinear antiferromagnets hold potential for developing spintronic devices. △ Less

Submitted 21 March, 2022; originally announced March 2022.

Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet

Authors: Dong Gun Oh, Jong Hyuk Kim, Mi Kyung Kim, Ki Won Jeong Hyun Jun Shin, Jae Min Hong, Jin Seok Kim, Kyungsun Moon, Nara Lee, Young Jai Choi

Abstract: A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase materials solely governs dynamic transport, and antiferromagnets are considered promising candidates for spintronic technology. In this work, we demonstrated ant… ▽ More A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase materials solely governs dynamic transport, and antiferromagnets are considered promising candidates for spintronic technology. In this work, we demonstrated antiferromagnet-based spintronic functionality on an itinerant Ising antiferromagnet of Ca0.9Sr0.1Co2As2 by integrating nanoscale spin-valve-type structure and investigating anisotropic magnetic properties driven by spin-flips. Multiple stacks of 1 nm thick spin-valve-like unit are intrinsically embedded in the antiferromagnetic spin structure. In the presence of a rotating magnetic field, a new type of the spin-valve-like operation was observed for large anomalous Hall conductivity and anisotropic magnetoresistance, whose effects are maximized above the spin-flip transition. In addition, a joint experimental and theoretical study provides an efficient tool to read out various spin states, which scheme can be useful for implementing extensive spintronic applications. △ Less

Submitted 21 March, 2022; originally announced March 2022.

Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties

Authors: M. X. Guo, C. K. Cheng, Y. C. Liu, C. N. Wu, W. N. Chen, T. Y Chen, C. T. Wu, C. H. Hsu, S. Q. Zhou, C. F. Chang, L. H. Tjeng, S. F. Lee, C. F. Pai, M. Hong, J. Kwo

Abstract: Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part… ▽ More Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Comments: 29 pages, 9 figures, 1 table

Enormous Berry-Curvature-Driven Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K

Authors: Wei-Jhih Zou, Meng-Xin Guo, Jyun-Fong Wong, Zih-Ping Huang, Jui-Min Chia, Wei-Nien Chen, Sheng-Xin Wang, Keng-Yung Lin, Lawrence Boyu Young, Yen-Hsun Glen Lin, Mohammad Yahyavi, Chien-Ting Wu, Horng-Tay Jeng, Shang-Fan Lee, Tay-Rong Chang, Minghwei Hong, Jueinai Kwo

Abstract: To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate phenomenally large anomalous Hall… ▽ More To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate phenomenally large anomalous Hall resistance (RAHE) exceeding 8 Ω (\r{ho}AHE of 3.2 μΩ*cm) at 300 K and sustaining to 400 K in 35 BST/EuIG samples, surpassing the past record of 0.28 Ω (\r{ho}AHE of 0.14 μΩ*cm) at 300 K. The remarkably large RAHE as attributed to an atomically abrupt, Fe-rich interface between BST and EuIG. Importantly, the gate dependence of the AHE loops shows no sign change with varying chemical potential. This observation is supported by our first-principles calculations via applying a gradient Zeeman field plus a contact potential on BST. Our calculations further demonstrate that the AHE in this heterostructure is attributed to the intrinsic Berry curvature. Furthermore, for gate-biased 4 nm BST on EuIG, a pronounced topological Hall effect (THE) coexisting with AHE is observed at the negative top-gate voltage up to 15 K. Interface tuning with theoretical calculations has opened up new opportunities to realize topologically distinct phenomena in tailored magnetic TI-based heterostructures. △ Less

Submitted 30 September, 2021; v1 submitted 30 March, 2021; originally announced March 2021.

Comments: 66 pages, 16 figures

A new representation for the Landau-de Gennes energy of nematic liquid crystals

Authors: Zhewen Feng, Min-Chun Hong

Abstract: In the Landau-de Gennes theory on nematic liquid crystals, the well-known Landau-de Gennes energy depends on four elastic constants; $L_1$, $L_2$, $L_3$, $L_4$. For the general case of $L_4\neq 0$, Ball-Majumdar \cite {BM} found an example that the Landau-de Gennes energy functional from physics literature \cite{MN} does not satisfy a coercivity condition, which causes a problem in mathematics to… ▽ More In the Landau-de Gennes theory on nematic liquid crystals, the well-known Landau-de Gennes energy depends on four elastic constants; $L_1$, $L_2$, $L_3$, $L_4$. For the general case of $L_4\neq 0$, Ball-Majumdar \cite {BM} found an example that the Landau-de Gennes energy functional from physics literature \cite{MN} does not satisfy a coercivity condition, which causes a problem in mathematics to establish existence of energy minimizers. In order to solve this problem, we observe that the original third order term on $L_4$, proposed by Schiele and Trimper \cite{ST} in physics, is a linear combination of a fourth order term and a second order term. Therefore, we can propose a new Landau-de Gennes energy, which is equal to the original for uniaxial nematic $Q$-tensors. The new Landau-de Gennes energy with general elastic constants satisfies the coercivity condition for all $Q$-tensors, which establishes a new link between mathematical and physical theory. Similarly to the work of Majumdar-Zarnescu \cite{MZ}, we prove existence and convergence of minimizers of the new Landau-de Gennes energy. Moreover, we find a new way to study the limiting problem of the Landau-de Gennes system since the cross product method \cite{Chen} on the Ginzburg-Landau equation does not work for the Landau-de Gennes system. △ Less

Submitted 6 January, 2021; v1 submitted 21 July, 2020; originally announced July 2020.

Comments: corrects several typos

MSC Class: 35J20; 35Q35; 76A15

Resonant Gold Nanoparticles Achieve Plasmon-Enhanced Pan-Microbial Pathogen Inactivation in the Shockwave Regime

Authors: Mina Nazari, Min Xi, Mark Aronson, Mi K. Hong, Suryaram Gummuluru, Allyson E. Sgro, Lawrence D. Ziegler, Christopher Gillespie, Kathleen Souza, Nhung Nguyen, Robert M. Smith, Edward Silva, Ayako Miura, Shyamsunder Erramilli, Björn M. Reinhard

Abstract: Pan-microbial inactivation technologies that do not require high temperatures, reactive chemical compounds, or UV radiation could address gaps in current infection control strategies and provide efficient sterilization of biologics in the biotechnological industry. Here, we demonstrate that femtosecond (fs) laser irradiation of resonant gold nanoparticles (NPs) under conditions that allow for E-fi… ▽ More Pan-microbial inactivation technologies that do not require high temperatures, reactive chemical compounds, or UV radiation could address gaps in current infection control strategies and provide efficient sterilization of biologics in the biotechnological industry. Here, we demonstrate that femtosecond (fs) laser irradiation of resonant gold nanoparticles (NPs) under conditions that allow for E-field mediated cavitation and shockwave generation achieve an efficient plasmon-enhanced photonic microbial pathogen inactivation. We demonstrate that this NP-enhanced, physical inactivation approach is effective against a diverse group of pathogens, including both enveloped and non-enveloped viruses, and a variety of bacteria and mycoplasma. Photonic inactivation is wavelength-dependent and in the absence of plasmonic enhancement from NPs, negligible levels of microbial inactivation are observed in the near-infrared (NIR) at 800 nm. This changes upon addition of resonant plasmonic NPs, which provide a strong enhancement of inactivation of viral and bacterial contaminants. Importantly, the plasmon-enhanced 800 nm femtosecond (fs)-pulse induced inactivation was selective to pathogens. No measurable damage was observed for antibodies included as representative biologics under identical conditions. △ Less

Submitted 27 November, 2018; originally announced November 2018.

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

Authors: C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu, M. X. Guo, C. K. Cheng, C. T. Wu, M. Hong, J. Kwo

Abstract: The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with… ▽ More The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 17 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 031601 (2019)

Fundamental and Progress of Bi2Te3-based Thermoelectric Materials

Authors: Min Hong, Zhi-Gang Chen, Jin Zou

Abstract: Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experime… ▽ More Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Large second harmonic generation of LiCs2PO4 caused by the metal-cation-centered groups

Authors: Xiyue Cheng, Myung-Hwan Whangbo, Guo-Cong Guo, Maochun Hong, Shuiquan Deng

Abstract: We evaluated the individual atom contributions to the second harmonic generation (SHG) coefficients of LiCs2PO4 (LCPO) by introducing the partial response functionals on the basis of first principles calculations. The SHG response of LCPO is dominated by the metal-cation-centered groups CsO6 and LiO4, not by the nonmetal-cation-centered groups PO4 one expects from the existing models and theories.… ▽ More We evaluated the individual atom contributions to the second harmonic generation (SHG) coefficients of LiCs2PO4 (LCPO) by introducing the partial response functionals on the basis of first principles calculations. The SHG response of LCPO is dominated by the metal-cation-centered groups CsO6 and LiO4, not by the nonmetal-cation-centered groups PO4 one expects from the existing models and theories. The SHG coefficients of LCPO are determined mainly by the occupied orbitals O-2p and Cs-5p as well as by the unoccupied orbitals Cs-5d and Li-2p. For the SHG response of a material, the polarizable atomic orbitals of the occupied and the unoccupied states are both important. △ Less

Submitted 2 March, 2018; originally announced March 2018.

Limit of zT enhancement in rock-salt structured chalcogenides by band convergence?

Authors: Min Hong, Zhi-Gang Chen, Yanzhong Pei, Lei Yang, Jin Zou

Abstract: Rock-salt structured chalcogenides, such as PbTe, PbSe, and SnTe, are the top candidates for mid-temperature thermoelectric applications, and their p-type thermoelectric efficiencies can be enhanced via aligning the valence bands. Here, we provided comprehensive numerical investigations on the effects of band convergence on electronic properties. We found that the extra valance band can indeed sig… ▽ More Rock-salt structured chalcogenides, such as PbTe, PbSe, and SnTe, are the top candidates for mid-temperature thermoelectric applications, and their p-type thermoelectric efficiencies can be enhanced via aligning the valence bands. Here, we provided comprehensive numerical investigations on the effects of band convergence on electronic properties. We found that the extra valance band can indeed significantly enhance the power factor. Nevertheless, the extra valance band can also increase the electronic thermal conductivity, which partially offsets the enhanced power factor for the overall figure-of-merit. Finally, we predicted that the maximum figure-of-merit for PbTe, PbSe, and SnTe can reach to 2.2, 1.8, and 1.6, re-spectively, without relying on the reduction in lattice thermal conductivity. △ Less

Submitted 28 June, 2016; originally announced June 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 161201 (2016)

Sub-diffractional, volume-confined polaritons in a natural hyperbolic material: hexagonal boron nitride

Authors: Joshua D. Caldwell, Andrey Kretinin, Yiguo Chen, Vincenzo Giannini, Michael M. Fogler, Yan Francescato, Chase T. Ellis, Joseph G. Tischler, Colin R. Woods, Alexander J. Giles, Minghui Hong, Kenji Watanabe, Takashi Taniguchi, Stefan A. Maier, Kostya S. Novoselov

Abstract: Strongly anisotropic media where the principal components of the dielectric tensor have opposite signs are called hyperbolic. Such materials length exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic los… ▽ More Strongly anisotropic media where the principal components of the dielectric tensor have opposite signs are called hyperbolic. Such materials length exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces the size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material, hexagonal boron nitride is an attractive alternative. We observe four series of multiple (up to seven) 'hyperbolic polariton' modes in boron nitride nanocones in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit record-high quality factors (Q up to 283) in the strong confinement regime (lambda/86 in the smallest structures). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering. △ Less

Submitted 18 August, 2014; v1 submitted 2 April, 2014; originally announced April 2014.

Journal ref: Nature Communications 5, 5221 (2014)

X-ray tomography of a crumpled plastoelastic thin sheet

Authors: Yen-Chih Lin, J. M. Sun, H. W. Yang, C. L. Wang, Yeukuang Hwu, T. M. Hong

Abstract: A three-dimensional X-ray tomography is performed to investigate the internal structure and its evolution of a crumpled aluminum foil. The upper and lower bounds of the internal geometric fractal dimension are determined, which increase with the compression. Contrary to the simulation results, we find that the mass distribution changes from being inhomogeneous to uniform. Corroborated with the e… ▽ More A three-dimensional X-ray tomography is performed to investigate the internal structure and its evolution of a crumpled aluminum foil. The upper and lower bounds of the internal geometric fractal dimension are determined, which increase with the compression. Contrary to the simulation results, we find that the mass distribution changes from being inhomogeneous to uniform. Corroborated with the evidence from previous experiments, these findings support the physical picture that the elastic property precedes the plastic one at dominating the deformation and mechanical response for all crumpled structures. We show that the interior of a crumpled ball at the plastic regime can be mapped to the compact packing of a granular system. △ Less

Submitted 18 December, 2009; v1 submitted 18 May, 2009; originally announced May 2009.

Journal ref: Physical Review E 80, 066114 (2009)

Spin-glass-like behavior caused by Mn-rich Mn(Ga)As nanoclusters in GaAs

Authors: Ching-Hao Chang, T. M. Hong

Abstract: We simulate the indirect exchange interaction between Mn-rich Mn(Ga)As nanoclusters in GaAs by analytical means. In contrast to the conventional Ruderman-Kittel-Kasuya-Yosida (RKKY) formula which considers the mediation by the carriers in the medium, we also include the contribution from those inside the clusters. Since the carrier concentration is higher in the clusters, this modification allow… ▽ More We simulate the indirect exchange interaction between Mn-rich Mn(Ga)As nanoclusters in GaAs by analytical means. In contrast to the conventional Ruderman-Kittel-Kasuya-Yosida (RKKY) formula which considers the mediation by the carriers in the medium, we also include the contribution from those inside the clusters. Since the carrier concentration is higher in the clusters, this modification allows the RKKY oscillation to change sign. Consequently, while the previous approach only favors ferromagnetism for this system, an antiferromagnetic coupling is in fact possible. Since the Mn-rich Mn(Ga)As nanoclusters are naturally formed and bound to have different sizes, their spin orientation is likely to be frustrated due to mixed preferences from different neighbors. We argue that this is likely the source of the spin-glass-like behavior which plagues this system. By tuning the size and narrowing its distribution, normal ferromagnetism can be restored with an Curie temperature higher than previously thought. △ Less

Submitted 7 January, 2009; originally announced January 2009.

Comments: 3 pages, 3figures

Journal ref: Appl. Phys. Lett. 93, 212106(2008)

Crumpling wires in two dimensions

Authors: Y. C. Lin, Y. W. Lin, T. M. Hong

Abstract: An energy-minimal simulation is proposed to study the patterns and mechanical properties of elastically crumpled wires in two dimensions. We varied the bending rigidity and stretching modulus to measure the energy allocation, size-mass exponent, and the stiffness exponent. The mass exponent is shown to be universal at value $D_{M}=1.33$. We also found that the stiffness exponent $α=-0.25$ is uni… ▽ More An energy-minimal simulation is proposed to study the patterns and mechanical properties of elastically crumpled wires in two dimensions. We varied the bending rigidity and stretching modulus to measure the energy allocation, size-mass exponent, and the stiffness exponent. The mass exponent is shown to be universal at value $D_{M}=1.33$. We also found that the stiffness exponent $α=-0.25$ is universal, but varies with the plasticity parameters $s$ and $θ_{p}$. These numerical findings agree excellently with the experimental results. △ Less

Submitted 12 September, 2008; originally announced September 2008.

Crumpling under an ambient pressure

Authors: Y. C. Lin, Y. L. Wang, Y. Liu, T. M. Hong

Abstract: A pressure chamber is designed to study the crumpling process under an ambient force. The compression force and its resulting radius for the ball obey a power law with an exponent that is independent of the thickness and initial size of the sheet. However, the exponent is found to be material-dependent and less than the universal value, 0.25, claimed by the previous simulations. The power law be… ▽ More A pressure chamber is designed to study the crumpling process under an ambient force. The compression force and its resulting radius for the ball obey a power law with an exponent that is independent of the thickness and initial size of the sheet. However, the exponent is found to be material-dependent and less than the universal value, 0.25, claimed by the previous simulations. The power law behavior disappears at high pressure when the compressibility drops discontinuously, which is suggestive of a jammed state. △ Less

Submitted 30 April, 2008; originally announced April 2008.

Journal ref: Phys. Rev. Lett. 101, 125504 (2008)

Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor

Authors: Xihua Wang, Yu Chen, Mi K. Hong, Shyamsunder Erramilli, Pritiraj Mohanty

Abstract: We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Du… ▽ More We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Due to increased surface-to-volume ratio, these devices show higher transconductance per unit width at smaller width. Our devices with nanoscale channel width demonstrate extreme sensitivity to surface field profile, and therefore can be used as logic elements in computation and as ultrasensitive sensors of surface-charge in chemical and biological species. △ Less

Submitted 15 February, 2008; originally announced February 2008.

Comments: 5 pages, 4 figures, two-column format. Related papers can be found at http://nano.bu.edu

Nanoscale field effect transistor for biomolecular signal amplification

Authors: Yu Chen, Xihua Wang, Mi K. Hong, Shyamsunder Erramilli, Carol Rosenberg, Pritiraj Mohanty

Abstract: We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Nar… ▽ More We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Narrower silicon channels demonstrate higher sensitivity to binding due to increased surface-to-volume ratio. The operation of the device in the negative source-drain region demonstrates signal amplification. The equivalence between protein binding and change in the surface potential is described. △ Less

Submitted 12 February, 2008; originally announced February 2008.

Comments: 4 pages, 3 figures, two-column format. Related papers can be found at http://nano.bu.edu

Journal ref: APPLIED PHYSICS LETTERS 91, 243511 (2007)

Novel oscillation for the indirect coupling between magnetic nanoparticles

Authors: C. H. Chang, T. M. Hong

Abstract: We study the prospect of using magnetic nanoparticles for the diluted magnetic seminconductors. The Ruderman-Kittel-Kasuya-Yosida formula is modified by explicitly taking into account the role of charge carriers inside the nanoparticles in addition to those in the medium. Calculations are done analytically. The final form of the coupling between nanoparticles is similar to the original formula e… ▽ More We study the prospect of using magnetic nanoparticles for the diluted magnetic seminconductors. The Ruderman-Kittel-Kasuya-Yosida formula is modified by explicitly taking into account the role of charge carriers inside the nanoparticles in addition to those in the medium. Calculations are done analytically. The final form of the coupling between nanoparticles is similar to the original formula except for additional phase terms which render a novel oscillatory feature with respect to the particle size - an interesting analogy to the same behavior when we vary their distance. This is to be contrasted to the previous approach which did not include the inner carriers and only favored a ferromagnetic coupling. The effect of inevitable deviations from a perfect sphere is estimated by the Born approximation. Our derivations can be readily generalized to finite temperatures. △ Less

Submitted 23 January, 2008; originally announced January 2008.

Comments: 5 pages, 8 figures

Circular invasion of fluid into a quenched disordered media

Authors: Y. C. Lin, K. Yun, T. M. Hong

Abstract: The Hele-Shaw experiment is performed with a circular invasion to study the scaling and dynamic behavior of the interface. We did not find any universal power law. The time exponent varies with the range of scale, as has been reported in the literature but not captured by existing models. We ascribe this distinct difference from the planar injection to the fact that our interface size grows with… ▽ More The Hele-Shaw experiment is performed with a circular invasion to study the scaling and dynamic behavior of the interface. We did not find any universal power law. The time exponent varies with the range of scale, as has been reported in the literature but not captured by existing models. We ascribe this distinct difference from the planar injection to the fact that our interface size grows with time. This renders the old geometries being constantly pushed apart to leave rooms for new features. As a result, the amplitude of the interface spectrum will decrease with the angular momentum, different from that of a white noise commonly assumed for the planar injection. Due to the moving boundary, the existing Kardar-Parisi-Zhang and Edwards-Wilkinson (EW) equations can no longer be applied. We propose a modified EW equation that not only conserves the fluid volume, but is also capable of predicting all the above features. Two phenomenological coefficients are introduced to represent the competing trend of instability and smoothness. Their dependence on the microscopic parameters are determined from dimensional arguments, and their estimated values conform with the experiments. △ Less

Submitted 9 September, 2007; v1 submitted 6 September, 2007; originally announced September 2007.

Comments: 6 pages, 6 figures

Simple mechanism for a positive exchange bias

Authors: T. M. Hong

Abstract: We argue that the interface coupling, responsible for the positive exchange bias (HE) observed in ferromagnetic/compensated antiferromagnetic (FM/AF) bilayers, favors an antiferromagnetic alignment. At low cooling field this coupling polarizes the AF spins close to the interface, which spin configuration persists after the sample is cooled below the Neel temperature. This pins the FM spins as in… ▽ More We argue that the interface coupling, responsible for the positive exchange bias (HE) observed in ferromagnetic/compensated antiferromagnetic (FM/AF) bilayers, favors an antiferromagnetic alignment. At low cooling field this coupling polarizes the AF spins close to the interface, which spin configuration persists after the sample is cooled below the Neel temperature. This pins the FM spins as in Bean's model and gives rise to a negative HE. When the cooling field increases, it eventually dominates and polarizes the AF spins in an opposite direction to the low field one. This results in a positive HE. The size of HE and the crossover cooling field are estimated. We explain why HE is mostly positive for an AF single crystal, and discuss the role of interface roughness on the magnitude of HE, and the quantum aspect of the interface coupling. △ Less

Submitted 4 March, 1998; originally announced March 1998.

Comments: 10 pages, 2 figures, to be published on May 1 issue of PRB

Effect of Landau Level Mixing for Electrons in Random Magnetic Field

Authors: M. C. Chang, M. F. Yang, T. M. Hong

Abstract: An effective Hamiltonian approach is used to study the effect of Landau-level mixing on the energy spectrum of electrons in a smooth but random magnetic field B(r) with a finite uniform component B_0. It is found that, as opposed to electrostatic disorder, the energy levels of localized electrons shift upward with a rate of order O(1/B_0) when B_0 is decreased, while the extended states remain s… ▽ More An effective Hamiltonian approach is used to study the effect of Landau-level mixing on the energy spectrum of electrons in a smooth but random magnetic field B(r) with a finite uniform component B_0. It is found that, as opposed to electrostatic disorder, the energy levels of localized electrons shift upward with a rate of order O(1/B_0) when B_0 is decreased, while the extended states remain static at the same order. Therefore, there is no indication that the extended states will float out of the Fermi energy and induce a metal-insulator transition as the magnetic disorder is increased. We also find that the Zeeman term may have significant effect on the spectral shift of low-lying Landau levels. △ Less

Submitted 18 March, 1997; originally announced March 1997.

Comments: 4 pages, 1 figure, RevTex, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 56, 3602 (1997)

Correlations between Aharonov-Bohm effects and one-dimensional subband populations in GaAs/Al$_{x}$Ga$_{1-x}$As rings

Authors: J. Liu, W. X. Gao, K. Ismail, K. Y. Lee, J. M. Hong, S. Washburn

Abstract: The Aharonov-Bohm (AB) interference patterns in ring-shaped conductors are usually dominated by random features. The amplitude of the oscillations is random from sample to sample and from point to point on the magnetic field axis owing to random scattering of the electron trajectories by impurities within the wires. We report experiments on new devices made with wet etching and global gates, whi… ▽ More The Aharonov-Bohm (AB) interference patterns in ring-shaped conductors are usually dominated by random features. The amplitude of the oscillations is random from sample to sample and from point to point on the magnetic field axis owing to random scattering of the electron trajectories by impurities within the wires. We report experiments on new devices made with wet etching and global gates, which have shown major progress towards removing the random features. In loops that exhibit ballistic conductance plateaux and cyclotron orbit trapping at $4.2K$, the random pattern of AB oscillations (observed for $T < 0.1K$) can be replaced by much more ordered one -- especially if only a few transverse modes are populated in the ring. The amplitude and shape of the oscillation envelope function change systematically as subbands are populated in the wires forming the loops. Mechanisms governing the AB effect in the ballistic regime are discussed. Correlation has been found between the $G(V_{g},B=0)$ staircase and the ``beating period" of the envelope functions. Quantum oscillations in $G(V_{g},B = 0)$ are consistent with direct interference of paths of unequal length. Both the correlations and the quantum oscillations in gate voltage are signatures of ballistic transport. △ Less

Submitted 15 June, 1993; originally announced June 1993.

Comments: 23 pages. 9 postscripts figures that will be emailed on request