-
Characterization of WSe$_2$ films using reflection Kikuchi diffraction in the scanning electron microscope and multivariate statistical analyses
Authors:
Tianbi Zhang,
Jakub Holzer,
Tomáš Vystavěl,
Miroslav Kolíbal,
Estácio Paiva de Araújo,
Chris Stephens,
T. Ben Britton
Abstract:
The study of thin films and 2D materials, including transition metal dichalcogenides such as WSe$_2$ offers opportunities to leverage their properties in advanced sensors, quantum technologies, and device to optimize functional performance. In this work, we characterize thin WSe$_2$ samples with variable thicknesses using scanning electron microscope (SEM)-based techniques focused on analysis of b…
▽ More
The study of thin films and 2D materials, including transition metal dichalcogenides such as WSe$_2$ offers opportunities to leverage their properties in advanced sensors, quantum technologies, and device to optimize functional performance. In this work, we characterize thin WSe$_2$ samples with variable thicknesses using scanning electron microscope (SEM)-based techniques focused on analysis of backscattered electron signal and Kikuchi diffraction patterns. These data were collected via a pixelated electron-counting direct electron detector positioned below the pole piece primarily configured for reflection Kikuchi diffraction (RKD), and a similar detector placed in the more conventional electron backscatter diffraction geometry. In addition to conventional pattern analysis for orientation microscopy, multivariate statistical methods (MSA) based on principal component analysis were applied to analyze diffraction patterns and differentiate thickness variations and crystal orientations within the thin films through data clustering. These results were compared with atomic force microscopy to validate thickness measurements. Our findings indicate that RKD combined with MSA is highly effective for characterizing 2D materials, enabling simultaneous assessment of thickness and crystallographic orientation. Systematic acceleration voltage variations in RKD experiments and comparisons with EBSD data suggest that the thickness dependency arises from inelastic scattering of diffracted electrons, which affects pattern contrast in the thin film regime. Collection and analysis of patterns obtained from monolayer, bilayer and tri-layer of WSe$_2$ are also demonstrated. This work reinforces the utility of SEM-based techniques, such as RKD, as valuable tools for the materials characterization toolkit, particularly for thin films and 2D materials.
△ Less
Submitted 27 June, 2025;
originally announced June 2025.
-
Comparison of Kikuchi Diffraction Geometries in Scanning Electron Microscope
Authors:
Tianbi Zhang,
Lukas Berners,
Jakub Holzer,
T. Ben Britton
Abstract:
Recent advances in scanning electron microscope (SEM) based Kikuchi diffraction have demonstrated the important potential for reflection and transmission methods, like transmission Kikuchi diffraction (TKD) and electron backscatter diffraction (EBSD). Furthermore, with the advent of compact direct electron detectors (DED) it has been possible to place the detector in a variety of configurations wi…
▽ More
Recent advances in scanning electron microscope (SEM) based Kikuchi diffraction have demonstrated the important potential for reflection and transmission methods, like transmission Kikuchi diffraction (TKD) and electron backscatter diffraction (EBSD). Furthermore, with the advent of compact direct electron detectors (DED) it has been possible to place the detector in a variety of configurations within the SEM chamber. This motivates the present work where we explore the similarities and differences of the different geometries that include on-axis TKD & off-axis TKD using electron transparent samples, as well as more conventional EBSD. Furthermore, we compare these with the newest method called "reflection Kikuchi diffraction" RKD where the sample is placed flat in the chamber and the detector is placed below the pole piece. Through remapping collected diffraction patterns, all these methods can be used to generate an experimental "diffraction sphere" that can be used to explore diffraction from any scattering vector from the unit cell, as well as the ability to perform band profile analysis. This diffraction sphere approach enables us to further probe specific differences between the methods, including for example thickness effects in TKD that can result in the generation of diffraction spots, as well as electron scattering path length effects that result in excess and deficiency variations, as well as inversion of bands in experimental patterns.
△ Less
Submitted 24 January, 2025; v1 submitted 19 November, 2024;
originally announced November 2024.
-
Finite-Size Effects and Dynamical Scaling in Two-Dimensional Josephson Junction Arrays
Authors:
J. Holzer,
R. S. Newrock,
C. J. Lobb,
T. Aouaroun,
S. T. Herbert
Abstract:
In recent years many groups have used Fisher, Fisher, and Huse (FFH) dynamical scaling to investigate and demonstrate details of the superconducting phase transition. Some attention has been focused on two dimensions where the phase transition is of the Kosterlitz-Thouless-Berezinskii (KTB) type. Pierson et al. used FFH dynamical scaling almost exclusively to suggest that the dynamics of the two…
▽ More
In recent years many groups have used Fisher, Fisher, and Huse (FFH) dynamical scaling to investigate and demonstrate details of the superconducting phase transition. Some attention has been focused on two dimensions where the phase transition is of the Kosterlitz-Thouless-Berezinskii (KTB) type. Pierson et al. used FFH dynamical scaling almost exclusively to suggest that the dynamics of the two-dimensional superconducting phase transition may be other than KTB-like. In this work we investigate the ability of scaling behavior by itself to yield useful information on the nature of the transition. We simulate current-voltage (IV) curves for two-dimensional Josephson junction arrays with and without finite-size-induced resistive tails. We find that, for the finite-size effect data, the values of the scaling parameters, specifically the transition temperature and the dynamical scaling exponent z, depend critically on the magnitude of the contribution that the resistive tails make to the IV curves. In effect, the values of the scaling parameters depend on the noise floor of the measuring system.
△ Less
Submitted 10 November, 2000;
originally announced November 2000.
