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Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking
Authors:
K. Fredrik Karlsson,
Daniel Y. Oberli,
Marc-André Dupertuis,
Valentina Troncale,
Marcin Byszewski,
Emanuele Pelucchi,
Alok Rudra,
Per Olof Holtz,
E. Kapon
Abstract:
A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in inverted tetrahedral pyramids. The studied QDs reveal signatures of one confined electron level, one heavy-hole-like level and one light-hole-like level. The va…
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A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in inverted tetrahedral pyramids. The studied QDs reveal signatures of one confined electron level, one heavy-hole-like level and one light-hole-like level. The various heavy-light-hole hybrid exciton complexes formed in these QDs are studied by polarization resolved spectroscopy, excitation power dependence, crystal temperature dependence and temporal single photon correlation measurements. The presented approach, which only requires a minimal theoretical input, enables strict spectral identification of the fine structure patterns including weak and spectrally overlapping emission lines. Furthermore, it allows the involved electron-hole and hole-hole exchange interaction energies to be deduced from measurements. Intricate fine structure patterns are qualitatively understood by group theory and shown to be very sensitive to the exact symmetry of the QD. Emission patterns influenced by hole-hole exchange interactions are found to be particularly useful for identifying QDs with high $C_{3v}$ symmetry and for probing symmetry breaking.
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Submitted 15 July, 2014;
originally announced July 2014.
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III-nitride based quantum dots for photon emission with controlled polarization switching
Authors:
Supaluck Amloy,
K. Fredrik Karlsson,
P. O Holtz
Abstract:
Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear polarization of the ground-state related transitions for asymmetric QDs of a material with small split-off energy. It is demonstrated that a moderate externally applied…
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Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear polarization of the ground-state related transitions for asymmetric QDs of a material with small split-off energy. It is demonstrated that a moderate externally applied electric field can be used to induce a linear polarization and to control its direction. InN is found to be the most efficient choice for dynamic polarization switching controlled by an electric field, with potential for polarization control on a photon-by-photon level.
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Submitted 22 November, 2013;
originally announced November 2013.
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Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
Authors:
T. V. Shubina,
S. V. Ivanov,
V. N. Jmerik,
D. D. Solnyshkov,
N. A. Cherkashin,
P. S. Kop'ev,
A. Vasson,
J. Leymarie,
K. F. Karlsson,
P. O. Holtz,
B. Monemar
Abstract:
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior…
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We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
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Submitted 9 November, 2003;
originally announced November 2003.
