Showing 1–10 of 10 results for author: Holman, N

Two-dimensional Si spin qubit arrays with multilevel interconnects

Authors: Sieu D. Ha, Edwin Acuna, Kate Raach, Zachery T. Bloom, Teresa L. Brecht, James M. Chappell, Maxwell D. Choi, Justin E. Christensen, Ian T. Counts, Dominic Daprano, J. P. Dodson, Kevin Eng, David J. Fialkow, Christina A. C. Garcia, Wonill Ha, Thomas R. B. Harris, nathan holman, Isaac Khalaf, Justine W. Matten, Christi A. Peterson, Clifford E. Plesha, Matthew J. Ruiz, Aaron Smith, Bryan J. Thomas, Samuel J. Whiteley , et al. (4 additional authors not shown)

Abstract: The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semi… ▽ More The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies. △ Less

Submitted 12 February, 2025; originally announced February 2025.

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling

Authors: Benjamin Harpt, J. Corrigan, Nathan Holman, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, Rusko Ruskov, Charles Tahan, William D. Oliver, R. McDermott, Mark Friesen, M. A. Eriksson

Abstract: We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. △ Less

Submitted 1 January, 2025; v1 submitted 11 July, 2024; originally announced July 2024.

Comments: Main text and Supplementary Information; 13 pages, 7 figures

Journal ref: npj Quantum Information 11, 5 (2025)

Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator

Authors: J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, William D. Oliver, R. McDermott, Charles Tahan, Mark Friesen, M. A. Eriksson

Abstract: Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled… ▽ More Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled to a high-impedance resonator via a "flip-chip" design geometry. By applying an adiabatic ac drive to the qubit through two different channels, and studying the effects of qubit energy detuning, interdot tunneling, and driving strength, we are able to unequivocally confirm the presence of a longitudinal coupling between the qubit and cavity, while the qubit remains in its ground state. Since this coupling is proportional to the driving amplitude, and is therefore switchable, it has the potential to become a powerful new tool in qubit experiments. △ Less

Submitted 14 September, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: Main text and Supplementary Materials, 16 pages, 10 figures

Journal ref: Physical Review Applied 20, 064005 (2023)

How valley-orbit states in silicon quantum dots probe quantum well interfaces

Authors: J. P. Dodson, H. Ekmel Ercan, J. Corrigan, Merritt Losert, Nathan Holman, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration int… ▽ More The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface. △ Less

Submitted 6 April, 2022; v1 submitted 26 March, 2021; originally announced March 2021.

Comments: 9 pages, 5 figures

Journal ref: Physical Review Letters (Vol. 128, Issue 14), (2022)

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator

Authors: Nathan Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, William D. Oliver, R. McDermott, M. A. Eriksson

Abstract: Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing… ▽ More Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3D integration. To prove the viability of this approach, we demonstrate 3D integration of a high-impedance TiN resonator coupled to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36 limited by the resonator-dot capacitance. Characterization of the dot and resonator systems shows such integration can be done while maintaining low charge noise metrics for the quantum dots and with improved loaded quality factors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowing for high-sensitivity charge detection and the potential for high fidelity 2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 12 pages, 7 figures

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

Authors: J. Corrigan, J. P. Dodson, H. Ekmel Ercan, J. C. Abadillo-Uriel, Brandur Thorgrimsson, T. J. Knapp, Nathan Holman, Thomas McJunkin, Samuel F. Neyens, E. R. MacQuarrie, Ryan H. Foote, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do… ▽ More Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Lett. 127, 127701 (2021)

Microwave Engineering for Semiconductor Quantum Dots in a cQED Architecture

Authors: Nathan Holman, J. P. Dodson, L. F. Edge, S. N. Coppersmith, M. Friesen, R. McDermott, M. A. Eriksson

Abstract: We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the chara… ▽ More We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Fabrication process and failure analysis for robust quantum dots in silicon

Authors: J. P. Dodson, Nathan Holman, Brandur Thorgrimsson, Samuel F. Neyens, E. R. MacQuarrie, Thomas McJunkin, Ryan H. Foote, L. F. Edge, S. N. Coppersmith, M. A. Eriksson

Abstract: We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetti… ▽ More We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure. △ Less

Submitted 15 September, 2020; v1 submitted 12 April, 2020; originally announced April 2020.

Comments: 5 figures, 9 pages

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Authors: E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson, J. Corrigan, Brandur Thorgrimsson, Nathan Holman, M. Palma, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously dr… ▽ More Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed. △ Less

Submitted 15 March, 2020; originally announced March 2020.

Comments: Main text plus supplemental information, 24 pages, 13 figures total)

Measurements of capacitive coupling within a quadruple quantum dot array

Authors: Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson, J. Corrigan, Nathan Holman, Brandur Thorgrimsson, M. Palma, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract… ▽ More We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 6 pages + supplementary information, 4 figures

Journal ref: Phys. Rev. Applied 12, 064049 (2019)