Showing 1–50 of 71 results for author: Hofmann, S

The role of non-equilibrium populations in dark exciton formation

Authors: Paul Werner, Wiebke Bennecke, Jan Philipp Bange, Giuseppe Meneghini, David Schmitt, Marco Merboldt, Anna M. Seiler, AbdulAziz AlMutairi, Kenji Watanabe, Takashi Taniguchi, G. S. Matthijs Jansen, Junde Liu, Daniel Steil, Stephan Hofmann, R. Thomas Weitz, Ermin Malic, Stefan Mathias, Marcel Reutzel

Abstract: In two-dimensional transition metal dichalcogenide structures, the optical excitation of a bright exciton may be followed by the formation of a plethora of lower energy dark states. In these formation and relaxation processes between different exciton species, non-equilibrium exciton and phonon populations play a dominant role, but remain so far largely unexplored as most states are inaccessible b… ▽ More In two-dimensional transition metal dichalcogenide structures, the optical excitation of a bright exciton may be followed by the formation of a plethora of lower energy dark states. In these formation and relaxation processes between different exciton species, non-equilibrium exciton and phonon populations play a dominant role, but remain so far largely unexplored as most states are inaccessible by regular spectroscopies. Here, on the example of homobilayer 2H-MoS$_2$, we realize direct access to the full exciton relaxation cascade from experiment and theory. By measuring the energy- and in-plane momentum-resolved photoemission spectral function, we reveal a distinct fingerprint for dark excitons in a non-equilibrium excitonic occupation distribution. In excellent agreement with microscopic many-particle calculations, we quantify the timescales for the formation of a non-equilibrium dark excitonic occupation and its subsequent thermalization to 85~fs and 150~fs, respectively. Our results provide a previously inaccessible view of the complete exciton relaxation cascade, which is of paramount importance for the future characterization of non-equilibrium excitonic phases and the efficient design of optoelectronic devices based on two-dimensional materials. △ Less

Submitted 9 May, 2025; originally announced May 2025.

The 2D Materials Roadmap

Authors: Wencai Ren, Peter Bøggild, Joan Redwing, Kostya Novoselov, Luzhao Sun, Yue Qi, Kaicheng Jia, Zhongfan Liu, Oliver Burton, Jack Alexander-Webber, Stephan Hofmann, Yang Cao, Yu Long, Quan-Hong Yang, Dan Li, Soo Ho Choi, Ki Kang Kim, Young Hee Lee, Mian Li, Qing Huang, Yury Gogotsi, Nicholas Clark, Amy Carl, Roman Gorbachev, Thomas Olsen , et al. (48 additional authors not shown)

Abstract: Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and developme… ▽ More Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials. △ Less

Submitted 28 April, 2025; v1 submitted 28 March, 2025; originally announced March 2025.

Comments: 97 pages, to be published in 2D Materials

Localisation of hexagonal boron nitride colour centres using patterned dielectric layers on graphene

Authors: M. K. Prasad, V. Babenko, A. W. Tadbier, S. Hofmann, J. P. Goss, J. D. Mar

Abstract: One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron nitride (hBN). However, a significant requirement for the realisation of such devices towards scalable technologies is the deterministic localisation of hBN colo… ▽ More One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron nitride (hBN). However, a significant requirement for the realisation of such devices towards scalable technologies is the deterministic localisation of hBN colour centres. Here, we demonstrate a novel approach to the localisation of hBN colour centre emission by using patterned dielectric layers grown on graphene via atomic layer deposition (ALD). While colour centre emission is quenched within areas where hBN is deposited directly on graphene due to charge transfer, it is maintained where hBN is deposited on micron-sized Al2O3 pillars which act as barriers to charge transfer. Importantly, our approach allows for device architectures where graphene layers are used as top and bottom electrodes for the application of vertical electric fields, such as for carrier injection in electroluminescent devices, Stark shifting of colour centre emission, and charge state control of defect colour centres. Furthermore, the use of ALD to grow dielectric layers directly on graphene allows for the control of tunnel barrier thicknesses with atomic layer precision, which is crucial for many of these device applications. Our work represents an important step towards the realisation of a wide range of scalable device applications based on the determinsitic localisation of electrically controlled hBN colour centres △ Less

Submitted 12 March, 2025; originally announced March 2025.

Comments: 5 pages, 8 figures

Selective synthesis of large-area monolayer tin sulfide from simple substances

Authors: Kazuki Koyama, Jun Ishihara, Takeshi Odagawa, Makito Aoyama, Chaoliang Zhang, Shiro Entani, Ye Fan, Atsuhiko Mori, Ibuki Kitakami, Sota Yamamoto, Toshihiro Omori, Yasuo Cho, Stephan Hofmann, Makoto Kohda

Abstract: Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. However, creating atomic-thickness crystals of SnS is… ▽ More Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. However, creating atomic-thickness crystals of SnS is challenging owing to the enhanced interlayer interactions caused by lone pair electrons, unlike to SnS2. Here, we demonstrate that p-type SnS can be selectively grown by simply varying the sulfur vapor concentration relative to tin using single-element precursors. We show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be easily and safely obtained by high-temperature etching of bulk SnS in a pure nitrogen gas atmosphere. These findings pave the way for device applications based on high-quality tin sulfide. △ Less

Submitted 26 November, 2024; originally announced November 2024.

Fusing matrix-product states with quantum Monte Carlo: reducing entanglement and sign problem at the same time

Authors: Gunnar Bollmark, Sam Mardazad, Johannes S. Hofmann, Adrian Kantian

Abstract: Systems of correlated quantum matter can be a steep challenge to any would-be method of solution. Matrix-product state (MPS)-based methods can describe 1D systems quasiexactly, but often struggle to retain sufficient bipartite entanglement to accurately approximate 2D systems already. Conversely, Quantum Monte Carlo (QMC) approaches, based on sampling a probability distribution, can generally appr… ▽ More Systems of correlated quantum matter can be a steep challenge to any would-be method of solution. Matrix-product state (MPS)-based methods can describe 1D systems quasiexactly, but often struggle to retain sufficient bipartite entanglement to accurately approximate 2D systems already. Conversely, Quantum Monte Carlo (QMC) approaches, based on sampling a probability distribution, can generally approximate 2D and 3D systems with an error that decays systematically with growing sampling size. However, QMC can suffer from the so-called sign problem, that makes the approach prohibitively costly for many systems of interest, such as repulsively interacting fermions away from commensurate densities and frustrated systems. In this article, we introduce a new hybrid approach, that combines auxiliary-field QMC (AFQMC) with MPS-based algorithms. This hybrid technique removes or reduces the sign problem (depending on the specific model) while also needing to retain much lower bipartite entanglement than brute-force application of a MPS-algorithm, without the use of uncontrolled approximations. We present two use-cases of the algorithm that would be challenging or impossible to address with any other approach, and quantify the extent of any remaining sign problem. △ Less

Submitted 1 November, 2024; originally announced November 2024.

Closing the reproducibility gap: 2D materials research

Authors: Peter Bøggild, Timothy John Booth, Nolan Lassaline, Bjarke Sørensen Jessen, Abhay Shivayogimath, Stephan Hofmann, Kim Daasbjerg, Anders Smith, Kasper Nørgaard, Amaia Zurutuza, Inge Asselberghs, Terrance Barkan, Rafael Taboryski, Andrew J. Pollard

Abstract: 2D materials research has reached significant scientific milestones, accompanied by a rapidly growing industrial sector in the two decades since the field's inception. Such rapid progress requires pushing past the boundary of what is technically and scientifically feasible and carries the risk of disseminating irreproducible research results. This Expert Recommendation addresses the need for enhan… ▽ More 2D materials research has reached significant scientific milestones, accompanied by a rapidly growing industrial sector in the two decades since the field's inception. Such rapid progress requires pushing past the boundary of what is technically and scientifically feasible and carries the risk of disseminating irreproducible research results. This Expert Recommendation addresses the need for enhanced reproducibility in 2D materials science and physics. Through a comprehensive examination of the factors that affect reproducibility the authors present a set of concrete guidelines designed to improve the reliability of research results. The introduction of a Standardised Template for Experimental Procedures (STEP) offers a novel approach to documenting experimental details that are crucial for replication and troubleshooting. We emphasise the importance of involving stakeholders from research, industry, publishing, funding agencies, and policymaking to foster a culture of transparency, reliability, and trust without blind angles and critical oversights. By addressing systemic issues that hinder reproducibility and presenting actionable steps for improvement, we aim to pave the way for more robust research practices in 2D materials science, contributing to the field's scientific maturation and the subsequent development of beneficial technologies. △ Less

Submitted 18 September, 2024; originally announced September 2024.

Comments: 24 pages, 3 textboxes, 1 figure, 2 tables

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Authors: Aferdita Xhameni, AbdulAziz AlMutairi, Xuyun Guo, Irina Chircă, Tianyi Wen, Stephan Hofmann, Valeria Nicolosi, Antonio Lombardo

Abstract: We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^{o}$C) thermal oxidation of HfS$_2$ in dry conditions, carefully controlling process parameters. The resulting HfO… ▽ More We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^{o}$C) thermal oxidation of HfS$_2$ in dry conditions, carefully controlling process parameters. The resulting HfO$_x$S$_y$/HfS$_2$ heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an R$_{ON}$/ R$_{OFF}$ of 102, programmable by 80ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60ns, $<$ 20pJ operation. This demonstrates the capability of these devices for low - energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150$^o$C over 10$^4$s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated in vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfO$_x$ - based devices. △ Less

Submitted 22 October, 2024; v1 submitted 14 August, 2024; originally announced August 2024.

Controlled Fabrication of Native Ultra-Thin Amorphous Gallium Oxide from 2D Gallium Sulfide for Emerging Electronic Applications

Authors: AbdulAziz AlMutairi, Aferdita Xhameni, Xuyun Guo, Irina Chircă, Valeria Nicolosi, Stephan Hofmann, Antonio Lombardo

Abstract: Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($β$-GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few layer form. Its oxide, gallium oxide (Ga$_2$O… ▽ More Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($β$-GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few layer form. Its oxide, gallium oxide (Ga$_2$O$_3$), combines large bandgap (4.4-5.3 eV) with high dielectric constant (~10). Despite the technological potential of both materials, controlled oxidation of atomically-thin $β$-GaS remains under-explored. This study focuses into the controlled oxidation of $β$-GaS using oxygen plasma treatment, achieving ultrathin native oxide (GaS$_x$O$_y$, ~4 nm) and GaS$_x$O$_y$/GaS heterostructures where the GaS layer beneath remains intact. By integrating such structures between metal electrodes and applying electric stresses as voltage ramps or pulses, we investigate their use for resistive random-access memory (ReRAM). The ultrathin nature of the produced oxide enables low operation power with energy use as low as 0.22 nJ per operation while maintaining endurance and retention of 350 cycles and 10$^4$ s, respectively. These results show the significant potential of the oxidation-based GaS$_x$O$_y$/GaS heterostructure for electronic applications and, in particular, low-power memory devices. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Intertwined Magnetism and Superconductivity in Isolated Correlated Flat Bands

Authors: Xuepeng Wang, J. F. Mendez-Valderrama, Johannes S. Hofmann, Debanjan Chowdhury

Abstract: Multi-orbital electronic models hosting a non-trivial band-topology in the regime of strong electronic interactions are an ideal playground for exploring a host of complex phenomenology. We consider here a sign-problem-free and time-reversal symmetric model with isolated topological (chern) bands involving both spin and valley degrees of freedom in the presence of a class of repulsive electronic i… ▽ More Multi-orbital electronic models hosting a non-trivial band-topology in the regime of strong electronic interactions are an ideal playground for exploring a host of complex phenomenology. We consider here a sign-problem-free and time-reversal symmetric model with isolated topological (chern) bands involving both spin and valley degrees of freedom in the presence of a class of repulsive electronic interactions. Using a combination of numerically exact quantum Monte Carlo computations and analytical field-theoretic considerations we analyze the phase-diagram as a function of the flat-band filling, temperature and relative interaction strength. The low-energy physics is described in terms of a set of intertwined orders -- a spin-valley hall (SVH) insulator and a spin-singlet superconductor (SC). Our low-temperature phase diagram can be understood in terms of an effective SO(4) pseudo-spin non-linear sigma model. Our work paves the way for building more refined and minimal models of realistic materials, including moiré systems, to study the universal aspects of competing insulating phases and superconductivity in the presence of non-trivial band-topology. △ Less

Submitted 7 July, 2024; v1 submitted 14 February, 2024; originally announced February 2024.

Comments: 13 pages, 12 figures; published version

Journal ref: Phys. Rev. B 110, L041105 (2024)

A foundation model for atomistic materials chemistry

Authors: Ilyes Batatia, Philipp Benner, Yuan Chiang, Alin M. Elena, Dávid P. Kovács, Janosh Riebesell, Xavier R. Advincula, Mark Asta, Matthew Avaylon, William J. Baldwin, Fabian Berger, Noam Bernstein, Arghya Bhowmik, Samuel M. Blau, Vlad Cărare, James P. Darby, Sandip De, Flaviano Della Pia, Volker L. Deringer, Rokas Elijošius, Zakariya El-Machachi, Fabio Falcioni, Edvin Fako, Andrea C. Ferrari, Annalena Genreith-Schriever , et al. (51 additional authors not shown)

Abstract: Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferabilit… ▽ More Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferability from one chemical system to the next. Here, using the state-of-the-art MACE architecture we introduce a single general-purpose ML model, trained on a public database of 150k inorganic crystals, that is capable of running stable molecular dynamics on molecules and materials. We demonstrate the power of the MACE-MP-0 model - and its qualitative and at times quantitative accuracy - on a diverse set problems in the physical sciences, including the properties of solids, liquids, gases, chemical reactions, interfaces and even the dynamics of a small protein. The model can be applied out of the box and as a starting or "foundation model" for any atomistic system of interest and is thus a step towards democratising the revolution of ML force fields by lowering the barriers to entry. △ Less

Submitted 1 March, 2024; v1 submitted 29 December, 2023; originally announced January 2024.

Comments: 119 pages, 63 figures, 37MB PDF

Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial

Authors: Ruqiao Xia, Nikita W. Almond, Stephen J. Kindness, Sergey A. Mikhailov, Wadood Tadbier, Riccardo Degl'Innocenti, Yuezhen Lu, Abbie Lowe, Ben Ramsay, Lukas A. Jakob, James Dann, Stephan Hofmann, Harvey E. Beere, David A. Ritchie, Wladislaw Michailow

Abstract: Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly… ▽ More Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: 16 pages, 5 figures

Quantum Monte Carlo Simulation of the 3D Ising Transition on the Fuzzy Sphere

Authors: Johannes S. Hofmann, Florian Goth, Wei Zhu, Yin-Chen He, Emilie Huffman

Abstract: We present a numerical quantum Monte Carlo (QMC) method for simulating the 3D phase transition on the recently proposed fuzzy sphere [Phys. Rev. X 13, 021009 (2023)]. By introducing an additional $SU(2)$ layer degree of freedom, we reformulate the model into a form suitable for sign-problem-free QMC simulation. From the finite-size-scaling, we show that this QMC-friendly model undergoes a quantum… ▽ More We present a numerical quantum Monte Carlo (QMC) method for simulating the 3D phase transition on the recently proposed fuzzy sphere [Phys. Rev. X 13, 021009 (2023)]. By introducing an additional $SU(2)$ layer degree of freedom, we reformulate the model into a form suitable for sign-problem-free QMC simulation. From the finite-size-scaling, we show that this QMC-friendly model undergoes a quantum phase transition belonging to the 3D Ising universality class, and at the critical point we compute the scaling dimensions from the state-operator correspondence, which largely agrees with the prediction from the conformal field theory. These results pave the way to construct sign-problem-free models for QMC simulations on the fuzzy sphere, which could advance the future study on more sophisticated criticalities. △ Less

Submitted 25 June, 2024; v1 submitted 30 October, 2023; originally announced October 2023.

Comments: 12 pages, 7 figures

Journal ref: SciPost Phys. Core 7, 028 (2024)

Ultrafast nano-imaging of dark excitons

Authors: David Schmitt, Jan Philipp Bange, Wiebke Bennecke, Giuseppe Meneghini, AbdulAziz AlMutairi, Marco Merboldt, Jonas Pöhls, Kenji Watanabe, Takashi Taniguchi, Sabine Steil, Daniel Steil, R. Thomas Weitz, Stephan Hofmann, Samuel Brem, G. S. Matthijs Jansen, Ermin Malic, Stefan Mathias, Marcel Reutzel

Abstract: The role and impact of spatial heterogeneity in two-dimensional quantum materials represents one of the major research quests regarding the future application of these materials in optoelectronics and quantum information science. In the case of transition-metal dichalcogenide heterostructures, in particular, direct access to heterogeneities in the dark-exciton landscape with nanometer spatial and… ▽ More The role and impact of spatial heterogeneity in two-dimensional quantum materials represents one of the major research quests regarding the future application of these materials in optoelectronics and quantum information science. In the case of transition-metal dichalcogenide heterostructures, in particular, direct access to heterogeneities in the dark-exciton landscape with nanometer spatial and ultrafast time resolution is highly desired, but remains largely elusive. Here, we introduce ultrafast dark field momentum microscopy to spatio-temporally resolve dark exciton formation dynamics in a twisted WSe$_2$/MoS$_2$ heterostructure with 55 femtosecond time- and 500~nm spatial resolution. This allows us to directly map spatial heterogeneity in the electronic and excitonic structure, and to correlate these with the dark exciton formation and relaxation dynamics. The benefits of simultaneous ultrafast nanoscale dark-field momentum microscopy and spectroscopy is groundbreaking for the present study, and opens the door to new types of experiments with unprecedented spectroscopic and spatiotemporal capabilities. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 39 pages, 4 main figures, 8 supplemental figures

Ultrafast dynamics of bright and dark excitons in monolayer WSe$_2$ and heterobilayer WSe$_2$/MoS$_2$

Authors: Jan Philipp Bange, Paul Werner, David Schmitt, Wiebke Bennecke, Giuseppe Meneghini, AbdulAziz AlMutairi, Marco Merboldt, Kenji Watanabe, Takashi Taniguchi, Sabine Steil, Daniel Steil, R. Thomas Weitz, Stephan Hofmann, G. S. Matthijs Jansen, Samuel Brem, Ermin Malic, Marcel Reutzel, Stefan Mathias

Abstract: The energy landscape of optical excitations in mono- and few-layer transition metal dichalcogenides (TMDs) is dominated by optically bright and dark excitons. These excitons can be fully localized within a single TMD layer, or the electron- and the hole-component of the exciton can be charge-separated over multiple TMD layers. Such intra- or interlayer excitons have been characterized in detail us… ▽ More The energy landscape of optical excitations in mono- and few-layer transition metal dichalcogenides (TMDs) is dominated by optically bright and dark excitons. These excitons can be fully localized within a single TMD layer, or the electron- and the hole-component of the exciton can be charge-separated over multiple TMD layers. Such intra- or interlayer excitons have been characterized in detail using all-optical spectroscopies, and, more recently, photoemission spectroscopy. In addition, there are so-called hybrid excitons whose electron- and/or hole-component are delocalized over two or more TMD layers, and therefore provide a promising pathway to mediate charge-transfer processes across the TMD interface. Hence, an in-situ characterization of their energy landscape and dynamics is of vital interest. In this work, using femtosecond momentum microscopy combined with many-particle modeling, we quantitatively compare the dynamics of momentum-indirect intralayer excitons in monolayer WSe$_2$ with the dynamics of momentum-indirect hybrid excitons in heterobilayer WSe$_2$/MoS$_2$, and draw three key conclusions: First, we find that the energy of hybrid excitons is reduced when compared to excitons with pure intralayer character. Second, we show that the momentum-indirect intralayer and hybrid excitons are formed via exciton-phonon scattering from optically excited bright excitons. And third, we demonstrate that the efficiency for phonon absorption and emission processes in the mono- and the heterobilayer is strongly dependent on the energy alignment of the intralayer and hybrid excitons with respect to the optically excited bright exciton. Overall, our work provides microscopic insights into exciton dynamics in TMD mono- and bilayers. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Comments: 27 pages, 5 figures

Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Authors: Kieran W. P. Orr, Jiecheng Diao, Muhammad Naufal Lintangpradipto, Darren J. Batey, Affan N. Iqbal, Simon Kahmann, Kyle Frohna, Milos Dubajic, Szymon J. Zelewski, Alice E. Dearle, Thomas A. Selby, Peng Li, Tiarnan A. S. Doherty, Stephan Hofmann, Osman M. Bakr, Ian K. Robinson, Samuel D. Stranks

Abstract: In recent years, halide perovskite materials have been used to make high performance solar cell and light-emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron-based Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. We find significant strain heter… ▽ More In recent years, halide perovskite materials have been used to make high performance solar cell and light-emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron-based Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. We find significant strain heterogeneity within MAPbBr$_{3}$ (MA = CH$_{3}$NH$_{3}^{+}$) crystals in spite of their high optoelectronic quality, and identify both $\langle$100$\rangle$ and $\langle$110$\rangle$ edge dislocations through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, we uncover dramatic light-induced dislocation migration across hundreds of nanometres. Further, by selectively studying crystals that are damaged by the X-ray beam, we correlate large dislocation densities and increased nanoscale strains with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. Our results demonstrate the dynamic nature of extended defects and strain in halide perovskites and their direct impact on device performance and operational stability. △ Less

Submitted 19 April, 2023; originally announced April 2023.

Comments: Main text and Supplementary Information. Main text: 15 pages, 4 figures. Supplementary Information: 16 pages, 27 figures, 1 table

Probing correlations in the exciton landscape of a moiré heterostructure

Authors: Jan Philipp Bange, David Schmitt, Wiebke Bennecke, Giuseppe Meneghini, AbdulAziz AlMutairi, Kenji Watanabe, Takashi Taniguchi, Daniel Steil, Sabine Steil, R. Thomas Weitz, G. S. Matthijs Jansen, Stephan Hofmann, Samuel Brem, Ermin Malic, Marcel Reutzel, Stefan Mathias

Abstract: Excitons are two-particle correlated bound states that are formed due to Coulomb interaction between single-particle holes and electrons. In the solid-state, cooperative interactions with surrounding quasiparticles can strongly tailor the exciton properties and potentially even create new correlated states of matter. It is thus highly desirable to access such cooperative and correlated exciton beh… ▽ More Excitons are two-particle correlated bound states that are formed due to Coulomb interaction between single-particle holes and electrons. In the solid-state, cooperative interactions with surrounding quasiparticles can strongly tailor the exciton properties and potentially even create new correlated states of matter. It is thus highly desirable to access such cooperative and correlated exciton behavior on a fundamental level. Here, we find that the ultrafast transfer of an exciton's hole across a type-II band-aligned moiré heterostructure leads to a surprising sub-200-fs upshift of the single-particle energy of the electron being photoemitted from the two-particle exciton state. While energy relaxation usually leads to an energetic downshift of the spectroscopic signature, we show that this unusual upshift is a clear fingerprint of the correlated interactions of the electron and hole parts of the exciton quasiparticle. In this way, time-resolved photoelectron spectroscopy is straightforwardly established as a powerful method to access exciton correlations and cooperative behavior in two-dimensional quantum materials. Our work highlights this new capability and motivates the future study of optically inaccessible correlated excitonic and electronic states in moiré heterostructures. △ Less

Submitted 31 March, 2023; originally announced March 2023.

Comments: 32 pages, 4 main figures, 5 supplemental figures

Electrochemically-gated Graphene Broadband Microwave Waveguides for Ultrasensitive Biosensing

Authors: Patrik Gubeljak, Tianhui Xu, Lorenzo Pedrazzetti, Oliver J. Burton, Luca Magagnin, Stephan Hofmann, George G. Malliaras, Antonio Lombardo

Abstract: Identification of non-amplified DNA sequences and single-base mutations is essential for molecular biology and genetic diagnostics. This paper reports a novel sensor consisting of electrochemically-gated graphene coplanar waveguides coupled with a microfluidic channel. Upon exposure to analytes, propagation of electromagnetic waves in the waveguides is modified as a result of interactions with the… ▽ More Identification of non-amplified DNA sequences and single-base mutations is essential for molecular biology and genetic diagnostics. This paper reports a novel sensor consisting of electrochemically-gated graphene coplanar waveguides coupled with a microfluidic channel. Upon exposure to analytes, propagation of electromagnetic waves in the waveguides is modified as a result of interactions with the fringing field and modulation of graphene dynamic conductivity resulting from electrostatic gating. Probe DNA sequences are immobilised on the graphene surface, and the sensor is exposed to DNA sequences which either perfectly match the probe, contain a singlebase mismatch or are unrelated. By monitoring the scattering parameters at frequencies between 50 MHz and 50 GHz, unambiguous and reproducible discrimination of the different strands is achieved at concentrations as low as 1 attomole per litre (1 aM). By controlling and synchronising frequency sweeps, electrochemical gating, and liquid flow in the microfluidic channel, the sensor generates multidimensional datasets. Advanced data analysis techniques are utilised to take full advantage of the richness of the dataset. A classification accuracy > 97% between all three sequences is achieved using different Machine Learning models, even in the presence of simulated noise and low signal-to-noise ratios. The sensor exceeds state-of-the-art sensitivity of field-effect transistors and microwave sensors for the identification of single-base mismatches. △ Less

Submitted 14 January, 2023; v1 submitted 25 October, 2022; originally announced October 2022.

Journal ref: Nanoscale, 2023,15, 15304-15317

Uncovering conformal symmetry in the $3D$ Ising transition: State-operator correspondence from a fuzzy sphere regularization

Authors: Wei Zhu, Chao Han, Emilie Huffman, Johannes S. Hofmann, Yin-Chen He

Abstract: The $3D$ Ising transition, the most celebrated and unsolved critical phenomenon in nature, has long been conjectured to have emergent conformal symmetry, similar to the case of the $2D$ Ising transition. Yet, the emergence of conformal invariance in the $3D$ Ising transition has rarely been explored directly, mainly due to unavoidable mathematical or conceptual obstructions. Here, we design an inn… ▽ More The $3D$ Ising transition, the most celebrated and unsolved critical phenomenon in nature, has long been conjectured to have emergent conformal symmetry, similar to the case of the $2D$ Ising transition. Yet, the emergence of conformal invariance in the $3D$ Ising transition has rarely been explored directly, mainly due to unavoidable mathematical or conceptual obstructions. Here, we design an innovative way to study the quantum version of the $3D$ Ising phase transition on spherical geometry, using the "fuzzy (non-commutative) sphere" regularization. We accurately calculate and analyze the energy spectra at the transition, and explicitly demonstrate the state-operator correspondence (i.e. radial quantization), a fingerprint of conformal field theory. In particular, we have identified 13 parity-even primary operators within a high accuracy and 2 parity-odd operators that were not known before. Our result directly elucidates the emergent conformal symmetry of the $3D$ Ising transition, a conjecture made by Polyakov half a century ago. More importantly, our approach opens a new avenue for studying $3D$ CFTs by making use of the state-operator correspondence and spherical geometry. △ Less

Submitted 30 October, 2023; v1 submitted 24 October, 2022; originally announced October 2022.

Comments: Close to the published version with a few extra modifications: 1) Typos (a missing of 1/2 factor in the Hamiltonian) are corrected; 2) Convention of lowest Landau level projection is modified; 3) A typo of pseudo-potentials in Appendix has been corrected

Journal ref: Phys. Rev. X 13, 021009 (2023)

Putting high-index Cu on the map for high-yield, dry-transferred CVD graphene

Authors: Oliver J. Burton, Zachary C. M. Winter, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, Stephan Hofmann

Abstract: Reliable, clean transfer and interfacing of 2D material layers is technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographi… ▽ More Reliable, clean transfer and interfacing of 2D material layers is technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependencies of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm$^2$/(Vs). Our approach is readily adaptable to other descriptors and 2D materials systems, and we discuss the opportunities of such holistic optimization. △ Less

Submitted 16 September, 2022; originally announced September 2022.

Comments: 56 pages, 19 figures

Journal ref: ACS Nano 17, 1229 (2023)

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

Authors: Barbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O Mahony, Harm Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier

Abstract: The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe… ▽ More The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Journal ref: Adv. Mater. Technol.2021, 6, 2100489

Solving 2D and 3D lattice models of correlated fermions -- combining matrix product states with mean field theory

Authors: Gunnar Bollmark, Thomas Köhler, Lorenzo Pizzino, Yiqi Yang, Hao Shi, Johannes S. Hofmann, Hao Shi, Shiwei Zhang, Thierry Giamarchi, Adrian Kantian

Abstract: Correlated electron states are at the root of many important phenomena including unconventional superconductivity (USC), where electron-pairing arises from repulsive interactions. Computing the properties of correlated electrons, such as the critical temperature $T_c$ for the onset of USC, efficiently and reliably from the microscopic physics with quantitative methods remains a major challenge for… ▽ More Correlated electron states are at the root of many important phenomena including unconventional superconductivity (USC), where electron-pairing arises from repulsive interactions. Computing the properties of correlated electrons, such as the critical temperature $T_c$ for the onset of USC, efficiently and reliably from the microscopic physics with quantitative methods remains a major challenge for almost all models and materials. In this theoretical work we combine matrix product states (MPS) with static mean field (MF) to provide a solution to this challenge for quasi-one-dimensional (Q1D) systems: Two- and three-dimensional (2D/3D) materials comprised of weakly coupled correlated 1D fermions. This MPS+MF framework for the ground state and thermal equilibrium properties of Q1D fermions is developed and validated for attractive Hubbard systems first, and further enhanced via analytical field theory. We then deploy it to compute $T_c$ for superconductivity in 3D arrays of weakly coupled, doped and repulsive Hubbard ladders. The MPS+MF framework thus enables the reliable, quantitative and unbiased study of USC and high-$T_c$ superconductivity - and potentially many more correlated phases - in fermionic Q1D systems from microscopic parameters, in ways inaccessible to previous methods. It opens the possibility of designing deliberately optimized Q1D superconductors, from experiments in ultracold gases to synthesizing new materials. △ Less

Submitted 8 July, 2022; originally announced July 2022.

GFET Lab: A Graphene Field-Effect Transistor TCAD Tool

Authors: Nathaniel J. Tye, Abdul Wadood Tadbier, Stephan Hofmann, Phillip Stanley-Marbell

Abstract: Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority of GFET modelling relies on user implementation. To this end, we present GFET Lab, a user-friendly, open-source software tool for simulating GFETs. We first pr… ▽ More Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority of GFET modelling relies on user implementation. To this end, we present GFET Lab, a user-friendly, open-source software tool for simulating GFETs. We first provide an overview of approaches to device modelling and a brief survey of GFET compact models and limitations. From this survey, we identify three key criteria for a suitable predictive model for circuit design: it must be a compact model; it must be SPICE-compatible; it must have a minimal number of fitting parameters. We selected Jimenez's drain-current model as it best matched these criteria, and we introduce some modifications to improve the predictive properties, namely accounting for saturation velocity and the asymmetry in n- and p-type carrier mobilities. We then validate the model by comparing GFETs simulated in our tool against experimentally-obtained GFET characteristics with the same materials and geometries and find good agreement between GFET Lab and experiment. We demonstrate the ability to export SPICE models for use in higher level circuit simulations and compare SPICE simulations of GFETs against GFETs simulated in GFET Lab, again showing good agreement. Lastly, we provide a brief tutorial of GFET Lab to demonstrate and encourage its use as a community-developed piece of software with both research and educational applications. △ Less

Submitted 24 June, 2022; originally announced June 2022.

Comments: Software available: https://github.com/physical-computation/gfet-simulator

Superconductivity, charge density wave, and supersolidity in flat bands with tunable quantum metric

Authors: Johannes S. Hofmann, Erez Berg, Debanjan Chowdhury

Abstract: Predicting the fate of an interacting system in the limit where the electronic bandwidth is quenched is often highly non-trivial. The complex interplay between interactions and quantum fluctuations driven by the band geometry can drive competition between various ground states, such as charge density wave order and superconductivity. In this work, we study an electronic model of topologically-triv… ▽ More Predicting the fate of an interacting system in the limit where the electronic bandwidth is quenched is often highly non-trivial. The complex interplay between interactions and quantum fluctuations driven by the band geometry can drive competition between various ground states, such as charge density wave order and superconductivity. In this work, we study an electronic model of topologically-trivial flat bands with a continuously tunable Fubini-Study metric in the presence of on-site attraction and nearest-neighbor repulsion, using numerically exact quantum Monte Carlo simulations. By varying the electron filling and the minimal spatial extent of the localized flat-band Wannier wavefunctions, we obtain a number of intertwined orders. These include a phase with coexisting charge density wave (CDW) order and superconductivity, i.e., a supersolid. In spite of the non-perturbative nature of the problem, we identify an analytically tractable limit associated with a 'small' spatial extent of the Wannier functions and derive a low-energy effective Hamiltonian that can well describe our numerical results. We also provide unambiguous evidence for the violation of any putative lower bound on the zero-temperature superfluid stiffness in geometrically non-trivial flat bands. △ Less

Submitted 3 May, 2023; v1 submitted 6 April, 2022; originally announced April 2022.

Comments: 5 pages, 3 figures; Supplement with 4 pages, 2 figures; (v2) Includes additional discussion and references

Journal ref: Phys. Rev. Lett. 130, 226001 (2023)

Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing

Authors: L. Camilli, M. Galbiati, L. Di Gaspare, M. De Seta, I. Píš, F. Bondino, A. Caporale, V. -P. Veigang-Radulescu, S. Hofmann, A. Sodo, R. Gunnella, L. Persichetti

Abstract: Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy… ▽ More Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors. △ Less

Submitted 20 July, 2022; v1 submitted 5 April, 2022; originally announced April 2022.

Journal ref: Applied Surface Science 2022

Room temperature donor incorporation for quantum devices: arsine on germanium

Authors: Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow, Rebecca Conybeare, Neil J. Curson, Steven R. Schofield

Abstract: Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but… ▽ More Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH$_3$) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic-scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale-up to large numbers of deterministically-placed qubits. △ Less

Submitted 16 March, 2022; originally announced March 2022.

Comments: 8 pages, 4 figures, plus 2 pages supplementary information and 1 supplementary figure

Multi-dimensional microwave sensing using graphene waveguides

Authors: Patrik Gubeljak, Lorenzo Pedrazzetti, Oliver J. Burton, Luca Magagnin, Stephan Hofmann, George G. Malliaras, Antonio Lombardo

Abstract: This paper presents an electrolytically gated broadband microwave sensor where atomically-thin graphene layers are integrated into coplanar waveguides and coupled with microfluidic channels. The interaction between a solution under test and the graphene surface causes material and concentration-specific modifications of graphene's DC and AC conductivity. Moreover, wave propagation in the waveguide… ▽ More This paper presents an electrolytically gated broadband microwave sensor where atomically-thin graphene layers are integrated into coplanar waveguides and coupled with microfluidic channels. The interaction between a solution under test and the graphene surface causes material and concentration-specific modifications of graphene's DC and AC conductivity. Moreover, wave propagation in the waveguide is modified by the dielectric properties of materials in its close proximity via the fringe field, resulting in a combined sensing mechanism leading to an enhanced S-parameter response compared to metallic microwave sensors. The possibility of further controlling the graphene conductivity via an electrolytic gate enables a new, multi-dimensional approach merging chemical field-effect sensing and microwave measurement methods. By controlling and synchronizing frequency sweeps, electrochemical gating and liquid flow in the microfluidic channel, we generate multidimensional datasets that enable a thorough investigation of the solution under study. As proof of concept, we functionalize the graphene surface in order to identify specific single-stranded DNA sequences dispersed in phosphate buffered saline solution. We achieve a limit of detection of ~1 attomole per litre for a perfect match DNA strand and a sensitivity of ~3 dB/decade for sub-pM concentrations. These results show that our devices represent a new and accurate metrological tool for chemical and biological sensing. △ Less

Submitted 2 September, 2022; v1 submitted 23 February, 2022; originally announced February 2022.

Journal ref: 2022 IEEE International Symposium on Medical Measurements and Applications (MeMeA), 2022, pp. 1-6

Formation of moiré interlayer excitons in space and time

Authors: David Schmitt, Jan Philipp Bange, Wiebke Bennecke, AbdulAziz AlMutairi, Kenji Watanabe, Takashi Taniguchi, Daniel Steil, D. Russell Luke, R. Thomas Weitz, Sabine Steil, G. S. Matthijs Jansen, Stephan Hofmann, Marcel Reutzel, Stefan Mathias

Abstract: Moiré superlattices in atomically thin van-der-Waals heterostructures hold great promise for an extended control of electronic and valleytronic lifetimes, the confinement of excitons in artificial moiré lattices, and the formation of novel exotic quantum phases. Such moiré-induced emergent phenomena are particularly strong for interlayer excitons, where the hole and the electron are localized in d… ▽ More Moiré superlattices in atomically thin van-der-Waals heterostructures hold great promise for an extended control of electronic and valleytronic lifetimes, the confinement of excitons in artificial moiré lattices, and the formation of novel exotic quantum phases. Such moiré-induced emergent phenomena are particularly strong for interlayer excitons, where the hole and the electron are localized in different layers of the heterostructure. In order to exploit the full potential of correlated moiré and exciton physics, a thorough understanding of the ultrafast interlayer exciton formation process and the real-space wavefunction confinement in the moiré potential is indispensable. However, direct experimental access to these parameters is limited since most excitonic quasiparticles are optically dark. Here we show that femtosecond photoemission momentum microscopy provides quantitative access to these key properties of the moiré interlayer excitons. We find that interlayer excitons are dominantly formed on the sub-50~fs timescale via interlayer tunneling at the K valleys of the Brillouin zones. In addition, we directly measure energy-momentum fingerprints of the moiré interlayer excitons by mapping their spectral signatures within the mini Brillouin zone that is built up by the twisted heterostructure. From these momentum-fingerprints, we gain quantitative access to the modulation of the exciton wavefunction within the moiré potential in real-space. Our work provides the first direct access to the interlayer moiré exciton formation dynamics in space and time and reveals new opportunities to study correlated moiré and exciton physics for the future realization of exotic quantum phases of matter. △ Less

Submitted 9 December, 2021; originally announced December 2021.

Comments: 7 pages main text, 11 pages SI

Fermionic Monte Carlo study of a realistic model of twisted bilayer graphene

Authors: Johannes S. Hofmann, Eslam Khalaf, Ashvin Vishwanath, Erez Berg, Jong Yeon Lee

Abstract: The rich phenomenology of twisted bilayer graphene (TBG) near the magic angle is believed to arise from electron correlations in topological flat bands. An unbiased approach to this problem is highly desirable, but also particularly challenging, given the multiple electron flavors, the topological obstruction to defining tight binding models and the long-ranged Coulomb interactions. While numerica… ▽ More The rich phenomenology of twisted bilayer graphene (TBG) near the magic angle is believed to arise from electron correlations in topological flat bands. An unbiased approach to this problem is highly desirable, but also particularly challenging, given the multiple electron flavors, the topological obstruction to defining tight binding models and the long-ranged Coulomb interactions. While numerical simulations of realistic models have thus far been confined to zero temperature, typically excluding some spin or valley species, analytic progress has relied on fixed point models away from the realistic limit. Here we present for the first time unbiased Monte Carlo simulations of realistic models of magic angle TBG at charge-neutrality. We establish the absence of a sign problem for this model in a momentum space approach, and describe a computationally tractable formulation that applies even on breaking chiral symmetry and including band dispersion. Our results include (i) the emergence of an insulating Kramers inter-valley coherent ground state in competition with a correlated semi-metal phase, (ii) detailed temperature evolution of order parameters and electronic spectral functions which reveal a `pseudogap' regime, in which gap features are established at a higher temperature than the onset of order and (iii) predictions for electronic tunneling spectra and their evolution with temperature. Our results pave the way towards uncovering the physics of magic angle graphene through exact simulations of over a hundred electrons across a wide temperature range. △ Less

Submitted 25 September, 2021; v1 submitted 25 May, 2021; originally announced May 2021.

Heuristic bounds on superconductivity and how to exceed them

Authors: Johannes S. Hofmann, Debanjan Chowdhury, Steven A. Kivelson, Erez Berg

Abstract: What limits the value of the superconducting transition temperature ($T_c$) is a question of great fundamental and practical importance. Various heuristic upper bounds on $T_c$ have been proposed, expressed as fractions of the Fermi temperature, $T_F$, the zero-temperature superfluid stiffness, $ρ_s(0)$, or a characteristic Debye frequency, $ω_0$. We show that while these bounds are physically mot… ▽ More What limits the value of the superconducting transition temperature ($T_c$) is a question of great fundamental and practical importance. Various heuristic upper bounds on $T_c$ have been proposed, expressed as fractions of the Fermi temperature, $T_F$, the zero-temperature superfluid stiffness, $ρ_s(0)$, or a characteristic Debye frequency, $ω_0$. We show that while these bounds are physically motivated and are certainly useful in many relevant situations, none of them serve as a fundamental bound on $T_c$. To demonstrate this, we provide explicit models where $T_c/T_F$ (with an appropriately defined $T_F$), $T_c/ρ_s(0)$, and $T_c/ω_0$ are unbounded. △ Less

Submitted 11 December, 2021; v1 submitted 19 May, 2021; originally announced May 2021.

Comments: 6 pages, 3 figures + appendices; (v2) Includes additional discussion, references and a revised title

Journal ref: npj Quantum Materials 7, 83 (2022)

Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene

Authors: R. O. M. Aboljadayel, A. Ionescu, O. J. Burton, G. Cheglakov, S. Hofmann, C. H. W. Barnes

Abstract: We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that gr… ▽ More We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO$_2$ substrate. The SQUID measurements show that both films have a Curie temperature of about 5.5 K, with a magnetic moment of 0.0032 emu/g at 2 K. The mixed-valency of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu$^{2+}$ : Eu$^{3+}$ ratio of 28 : 72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the Raman spectroscopy scans show that the growth of the Eu$_3$O$_4$ thin films has no damaging effect on the underlayer graphene sheet. Therefore, the graphene layer is expected to retain its properties. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: 16 pages, 9 figures

Journal ref: Nanomaterials 2021, 11(6), 1598

Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism

Authors: R. O. M. Aboljadayel, C. J. Kinane, C. A. F. Vaz, D. M. Love, R. S. Weatherup, P. Braeuninger-Weimer, M. -B. Martin, A. Ionescu, A. J. Caruana, T. R. Charlton, J. Llandro, P. M. S. Monteiro, C. H. W. Barnes, S. Hofmann, S. Langridge

Abstract: We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to… ▽ More We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization. △ Less

Submitted 21 March, 2022; v1 submitted 25 January, 2021; originally announced January 2021.

Comments: 21 pages, 7 figures

The ALF (Algorithms for Lattice Fermions) project release 2.4. Documentation for the auxiliary-field quantum Monte Carlo code

Authors: ALF Collaboration, F. F. Assaad, M. Bercx, F. Goth, A. Götz, J. S. Hofmann, E. Huffman, Z. Liu, F. Parisen Toldin, J. S. E. Portela, J. Schwab

Abstract: The Algorithms for Lattice Fermions package provides a general code for the finite-temperature and projective auxiliary-field quantum Monte Carlo algorithm. The code is engineered to be able to simulate any model that can be written in terms of sums of single-body operators, of squares of single-body operators and single-body operators coupled to a bosonic field with given dynamics. The package in… ▽ More The Algorithms for Lattice Fermions package provides a general code for the finite-temperature and projective auxiliary-field quantum Monte Carlo algorithm. The code is engineered to be able to simulate any model that can be written in terms of sums of single-body operators, of squares of single-body operators and single-body operators coupled to a bosonic field with given dynamics. The package includes five pre-defined model classes: SU(N) Kondo, SU(N) Hubbard, SU(N) t-V and SU(N) models with long range Coulomb repulsion on honeycomb, square and N-leg lattices, as well as $Z_2$ unconstrained lattice gauge theories coupled to fermionic and $Z_2$ matter. An implementation of the stochastic Maximum Entropy method is also provided. One can download the code from our Git instance at https://git.physik.uni-wuerzburg.de/ALF/ALF/-/tree/ALF-2.4 and sign in to file issues. △ Less

Submitted 28 December, 2022; v1 submitted 22 December, 2020; originally announced December 2020.

Comments: 126 pages, 12 figures. v7: update do ALF 2.4. Submission to SciPost. This article supersedes arXiv:1704.00131

Journal ref: SciPost Physics Codebases 1 (2022)

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Authors: Vitaliy Babenko, Ye Fan, Vlad-Petru Veigang-Radulescu, Barry Brennan, Andrew J. Pollard, Oliver Burton, Jack A. Alexander-Webber, Robert S. Weatherup, Barbara Canto, Martin Otto, Daniel Neumaier, Stephan Hofmann

Abstract: Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron… ▽ More Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch) production and utilise this h-BN as a protective layer for graphene towards integrated (opto) electronic device fabrication. △ Less

Submitted 26 November, 2020; originally announced November 2020.

Journal ref: IOP 2D Materials, Volume 7, Number 2, 024005 (2020)

Specific Heat of a Quantum Critical Metal

Authors: Ori Grossman, Johannes S. Hofmann, Tobias Holder, Erez Berg

Abstract: We investigate the specific heat, $c$, near an Ising nematic quantum critical point (QCP), using sign problem-free quantum Monte Carlo simulations. Cooling towards the QCP, we find a broad regime of temperature where $c/T$ is close to the value expected from the non-interacting band structure, even for a moderately large coupling strength. At lower temperature, we observe a rapid rise of $c/T$, fo… ▽ More We investigate the specific heat, $c$, near an Ising nematic quantum critical point (QCP), using sign problem-free quantum Monte Carlo simulations. Cooling towards the QCP, we find a broad regime of temperature where $c/T$ is close to the value expected from the non-interacting band structure, even for a moderately large coupling strength. At lower temperature, we observe a rapid rise of $c/T$, followed by a drop to zero as the system becomes superconducting. The spin susceptibility begins to drop at roughly the same temperature where the enhancement of $c/T$ onsets, most likely due to the opening of a gap associated with superconducting fluctuations. These findings suggest that superconductivity and non-Fermi liquid behavior (manifested in an enhancement of the effective mass) onset at comparable energy scales. We support these conclusions with an analytical perturbative calculation. △ Less

Submitted 15 July, 2021; v1 submitted 23 September, 2020; originally announced September 2020.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 127, 017601 (2021)

Giant Photoluminescence Enhancement in MoSe$_{2}$ monolayers treated with Oleic Acid Ligands

Authors: Arelo O. A Tanoh, Jack Alexander-Webber, Ye Fan, Nicholas Gauriot, James Xiao, Raj Pandya, Zhaojun Li, Stephan Hofmann, Akshay Rao

Abstract: The inherently low photoluminescence (PL) yields in as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e. defects) and uncontrolled doping, which give rise to non-radiative exciton decay pathways. To date, a number of chemical passivation schemes have been successfully developed to improve PL in sulphur based TMDs i.e. molybden… ▽ More The inherently low photoluminescence (PL) yields in as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e. defects) and uncontrolled doping, which give rise to non-radiative exciton decay pathways. To date, a number of chemical passivation schemes have been successfully developed to improve PL in sulphur based TMDs i.e. molybdenum disulphide (MoS2) and tungsten disulphide (WS2) monolayers. Reports on solution based chemical passivation schemes for improving PL yields in selenium (Se) based TMDs are lacking I comparison, with only one known study that uses hydrobromic acid vapour to improve PL in chemical vapour deposited (CVD) Molybdenum diselenide (MoSe2). Here, we demonstrate that treatment with oleic acid (OA) provides a simple wet chemical passivation method for monolayer MoSe2, enhancing PL yield by an average of 58 fold, while also enhancing spectral uniformity across the material and reducing emission linewidth. Excitation intensity dependent PL reveals trap-free PL dynamics dominated by neutral exciton recombination. Time-resolved PL (TRPL) studies reveal significantly increased PL lifetimes, with pump intensity dependent TRPL measurements also confirming trap free PL dynamics in OA treated MoSe2. Field effect transistors show reduced charge trap density and improved on-off ratios after treatment with OA. These results indicate defect passivation by OA, which we hypothesise act as ligands, passivating chalcogen defects through oleate coordination to Mo dangling bonds. △ Less

Submitted 6 April, 2021; v1 submitted 8 June, 2020; originally announced June 2020.

Long-Range Propagation and Interference of $d$-wave Superconducting Pairs in Graphene

Authors: D. Perconte, K. Seurre, V. Humbert, C. Ulysse, A. Sander, J. Trastoy, V. Zatko, F. Godel, P. R. Kidambi, S. Hofmann, X. P. Zhang, D. Bercioux, F. S. Bergeret, B. Dlubak, P. Seneor, Javier E. Villegas

Abstract: Recent experiments have shown that proximity with high-temperature superconductors induces unconventional superconducting correlations in graphene. Here we demonstrate that those correlations propagate hundreds of nanometer, allowing for the unique observation of $d$-wave Andreev pair interferences in YBa$_2$Cu$_3$O$_7$-graphene devices that behave as a Fabry-Pérot cavity. The interferences show a… ▽ More Recent experiments have shown that proximity with high-temperature superconductors induces unconventional superconducting correlations in graphene. Here we demonstrate that those correlations propagate hundreds of nanometer, allowing for the unique observation of $d$-wave Andreev pair interferences in YBa$_2$Cu$_3$O$_7$-graphene devices that behave as a Fabry-Pérot cavity. The interferences show as a series of pronounced conductance oscillations analogous to those originally predicted by de Gennes--Saint-James for conventional metal-superconductor junctions. The present work is pivotal to the study of exotic directional effects expected for nodal superconductivity in Dirac materials. △ Less

Submitted 8 September, 2020; v1 submitted 24 February, 2020; originally announced February 2020.

Comments: 4 pages with 4 figure

Journal ref: Phys. Rev. Lett. 125, 087002 (2020)

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation

Authors: Hope M. Bretscher, Zhaojun Li, James Xiao, Diana Y. Qiu, Sivan Refaely-Abramson, Jack Alexander-Webber, Arelo O. A. Tanoh, Ye Fan, Géraud Delport, Cyan Williams, Samuel D. Stranks, Stephan Hofmann, Jeffrey B. Neaton, Steven G. Louie, Akshay Rao

Abstract: Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth passivation. Here, using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we demonstrate that sulfur vacancy defects act as exciton tr… ▽ More Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth passivation. Here, using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we demonstrate that sulfur vacancy defects act as exciton traps. Current chemical treatments do not passivate these sites, leading to decreased mobility and trap-limited photoluminescence. We present a generalizable treatment protocol based on the use of passivating agents such as thiols or sulfides in combination with a Lewis acid to passivate sulfur vacancies in monolayer MoS$_2$ and WS$_2$, increasing photoluminescence up to 275 fold, while maintaining mobilities. Our findings suggest a route for simple and rational defect engineering strategies, where the passivating agent varies the electronic properties, thereby allowing the design of new heterostructures. △ Less

Submitted 10 February, 2020; originally announced February 2020.

Superconductivity, pseudogap, and phase separation in topological flat bands: a quantum Monte Carlo study

Authors: Johannes S. Hofmann, Erez Berg, Debanjan Chowdhury

Abstract: We study a two-dimensional model of an isolated narrow topological band at partial filling with local attractive interactions. Numerically exact quantum Monte Carlo calculations show that the ground state is a superconductor with a critical temperature that scales nearly linearly with the interaction strength. We also find a broad pseudogap regime at temperatures above the superconducting phase th… ▽ More We study a two-dimensional model of an isolated narrow topological band at partial filling with local attractive interactions. Numerically exact quantum Monte Carlo calculations show that the ground state is a superconductor with a critical temperature that scales nearly linearly with the interaction strength. We also find a broad pseudogap regime at temperatures above the superconducting phase that exhibits strong pairing fluctuations and a tendency towards electronic phase separation; introducing a small nearest neighbor attraction suppresses superconductivity entirely and results in phase separation. We discuss the possible relevance of superconductivity in this unusual regime to the physics of flat band moiré materials, and as a route to designing higher temperature superconductors. △ Less

Submitted 15 June, 2020; v1 submitted 18 December, 2019; originally announced December 2019.

Comments: We now also include weak nearest-neighbor attractive interactions and find phase separation instead of superconductivity (new Fig. 4)

Journal ref: Phys. Rev. B 102, 201112 (2020)

A search for correlation-induced adiabatic paths between distinct topological insulators

Authors: Johannes S. Hofmann, Fakher F. Assaad, Raquel Queiroz, Eslam Khalaf

Abstract: Correlations in topological states of matter provide a rich phenomenology, including a reduction in the topological classification of the interacting system compared to its non-interacting counterpart. This happens when two phases that are topologically distinct on the non-interacting level become adiabatically connected once interactions are included. We use a quantum Monte Carlo method to study… ▽ More Correlations in topological states of matter provide a rich phenomenology, including a reduction in the topological classification of the interacting system compared to its non-interacting counterpart. This happens when two phases that are topologically distinct on the non-interacting level become adiabatically connected once interactions are included. We use a quantum Monte Carlo method to study such a reduction. We consider a 2D charge-conserving analog of the Levin-Gu superconductor whose classification is reduced from $\mathbb{Z}$ to $\mathbb{Z}_4$. We may expect any symmetry-preserving interaction that leads to a symmetric gapped ground state at strong coupling, and consequently a gapped symmetric surface, to be sufficient for such reduction. Here, we provide a counter example by considering an interaction which (i) leads to a symmetric gapped ground state at sufficient strength and (ii) does not allow for any adiabatic path connecting the trivial phase to the topological phase with $w=4$. The latter is established by numerically mapping the phase diagram as a function of the interaction strength and a parameter tuning the topological invariant. Instead of the adiabatic connection, the system exhibits an extended region of spontaneous symmetry breaking separating the topological sectors. Frustration reduces the size of this long-range ordered region until it gives way to a first order phase transition. Within the investigated range of parameters, there is no adiabatic path deforming the formerly distinct free fermion states into each other. We conclude that an interaction which trivializes the surface of a gapped topological phase is necessary but not sufficient to establish an adiabatic path within the reduced classification. In other words, the class of interactions which trivializes the surface is different from the class which establishes an adiabatic connection in the bulk. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Research 2, 023390 (2020)

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Authors: Bernhard C. Bayer, Adrianus I. Aria, Dominik Eder, Stephan Hofmann, Jannik C. Meyer

Abstract: The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposite… ▽ More The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials. △ Less

Submitted 2 September, 2019; originally announced September 2019.

Tunable Klein-like tunneling of high-temperature superconducting pairs into graphene

Authors: David Perconte, Fabian A. Cuellar, Constance Moreau-Luchaire, Maelis Piquemal-Banci, Regina Galceran, Piran R. Kidambi, Marie-Blandine Martin, Stephan Hofmann, Rozenn Bernard, Bruno Dlubak, Pierre Seneor, Javier E. Villegas

Abstract: Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential… ▽ More Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential of supercurrent modulation through electrical gating. Despite the interest of high-temperature superconductors in that context, realizations have been exclusively based on low-temperature ones. Here we demonstrate gate-tunable, high-temperature superconducting proximity effect in graphene. Notably, gating effects result from the perfect transmission of superconducting pairs across an energy barrier -a form of Klein tunneling, up to now observed only for non-superconducting carriers- and quantum interferences controlled by graphene doping. Interestingly, we find that this type of interferences become dominant without the need of ultra-clean graphene, in stark contrast to the case of low-temperature superconductors. These results pave the way to a new class of tunable, high-temperature Josephson devices based on large-scale graphene. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Journal ref: Nature Physics volume 14, pages 25 29 (2018)

High-mobility, wet-transferred graphene grown by chemical vapor deposition

Authors: D. De Fazio, D. G. Purdie, A. K. Ott, P. Braeuninger-Weimer, T. Khodkov, S. Goossens, T. Taniguchi, K. Watanabe, P. Livreri, F. H. L. Koppens, S. Hofmann, I. Goykhman, A. C. Ferrari, A. Lombardo

Abstract: We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. Th… ▽ More We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach. △ Less

Submitted 5 April, 2019; v1 submitted 2 April, 2019; originally announced April 2019.

Wide-field spectral super-resolution mapping of optically active defects in hBN

Authors: Jean Comtet, Evgenii Glushkov, Vytautas Navikas, Jiandong Feng, Vitaliy Babenko, Stephan Hofmann, Kenji Watanabe, Takashi Taniguchi, Aleksandra Radenovic

Abstract: Point defects can have significant impacts on the mechanical, electronic and optical properties of materials. The development of robust, multidimensional, high-throughput and large-scale characterization techniques of defects is thus crucial, from the establishment of integrated nanophotonic technologies to material growth optimization. Here, we demonstrate the potential of wide-field spectral sin… ▽ More Point defects can have significant impacts on the mechanical, electronic and optical properties of materials. The development of robust, multidimensional, high-throughput and large-scale characterization techniques of defects is thus crucial, from the establishment of integrated nanophotonic technologies to material growth optimization. Here, we demonstrate the potential of wide-field spectral single-molecule localization microscopy (spectral SMLM) for the determination of ensemble spectral properties, as well as characterization of spatial, spectral and temporal dynamics of single defects in CVD-grown and irradiated exfoliated hexagonal boron-nitride (hBN) materials. We characterize the heterogeneous spectral response of our samples, and identify at least two types of defects in CVD-grown materials, while irradiated exfoliated flakes show predominantly only one type of defect. We analyze the blinking kinetics and spectral emission for each type of defects, and discuss their implications with respect to the observed spectral heterogeneity of our samples. Our study shows the potential of wide-field spectral SMLM techniques in material science and paves the way towards quantitative multidimensional mapping of defect properties. △ Less

Submitted 18 March, 2019; v1 submitted 21 January, 2019; originally announced January 2019.

Compressive Behavior and Failure Mechanisms of Freestanding and Composite 3D Graphitic Foams

Authors: Kenichi Nakanishi, Adrianus I. Aria, Matthew Berwind, Robert S. Weatherup, Christoph Eberl, Stephan Hofmann, Norman A. Fleck

Abstract: Open-cell graphitic foams were fabricated by chemical vapor deposition using nickel templates and their compressive responses were measured over a range of relative densities. The mechanical response required an interpretation in terms of a hierarchical micromechanical model, spanning 3 distinct length scales. The power law scaling of elastic modulus and yield strength versus relative density sugg… ▽ More Open-cell graphitic foams were fabricated by chemical vapor deposition using nickel templates and their compressive responses were measured over a range of relative densities. The mechanical response required an interpretation in terms of a hierarchical micromechanical model, spanning 3 distinct length scales. The power law scaling of elastic modulus and yield strength versus relative density suggests that the cell walls of the graphitic foam deform by bending. The length scale of the unit cell of the foam is set by the length of the struts comprising the cell wall, and is termed level I. The cell walls comprise hollow triangular tubes, and bending of these strut-like tubes involves axial stretching of the tube walls. This length scale is termed level II. In turn, the tube walls form a wavy stack of graphitic layers, and this waviness induces interlayer shear of the graphitic layers when the tube walls are subjected to axial stretch. The thickness of the tube wall defines the third length scale, termed level III. We show that the addition of a thin, flexible ceramic Al2O3 scaffold stiffens and strengthens the foam, yet preserves the power law scaling. The hierarchical model gives fresh insight into the mechanical properties of foams with cell walls made from emergent 2D layered solids. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Journal ref: Acta Materialia, 159, 187-196 (2018)

Non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy

Authors: Simon Zihlmann, Péter Makk, Sebastián Castilla, Jörg Gramich, Kishan Thodkar, Sabina Caneva, Ruizhi Wang, Stephan Hofmann, Christian Schönenberger

Abstract: We report on non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy. A hexagonal boron nitride (hBN) tunnel barrier in combination with a superconducting Pb contact is used to extract the local energy distribution function of the quasiparticles in graphene samples in different transport regimes. In the cases where the energy distribution function resembles a Fermi-Dir… ▽ More We report on non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy. A hexagonal boron nitride (hBN) tunnel barrier in combination with a superconducting Pb contact is used to extract the local energy distribution function of the quasiparticles in graphene samples in different transport regimes. In the cases where the energy distribution function resembles a Fermi-Dirac distribution, the local electron temperature can directly be accessed. This allows us to study the cooling mechanisms of hot electrons in graphene. In the case of long samples (device length $L$ much larger than the electron-phonon scattering length $l_{e-ph}$), cooling through acoustic phonons is dominant. We find a cross-over from the dirty limit with a power law $~T^3$ at low temperature to the clean limit at higher temperatures with a power law $~T^4$ and a deformation potential of 13.3 eV. For shorter samples, where $L$ is smaller than $l_{e-ph}$ but larger than the electron-electron scattering length $l_{e-e}$, the well-known cooling through electron out-diffusion is found. Interestingly, we find strong indications of an enhanced Lorenz number in graphene. We also find evidence of a non-Fermi-Dirac distribution function, which is a result of non-interacting quasiparticles in very short samples. △ Less

Submitted 14 February, 2019; v1 submitted 21 November, 2018; originally announced November 2018.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 99, 075419 (2019)

A peeling approach for integrated manufacturing of large mono-layer h-BN crystals

Authors: Ruizhi Wang, David G. Purdie, Ye Fang, Fabien Massabuau, Philipp Braeuninger-Weimer, Oliver J. Burton, Raoul Blume, Robert Schloegl, Antonio Lombardo, Robert S. Weatherup, Stephan Hofmann

Abstract: Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk… ▽ More Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks. △ Less

Submitted 30 July, 2018; originally announced July 2018.

Kondo Breakdown via Fractionalization in a Frustrated Kondo Lattice Model

Authors: Johannes S. Hofmann, Fakher F. Assaad, Tarun Grover

Abstract: We consider Dirac electrons on the honeycomb lattice Kondo coupled to spin-1/2 degrees of freedom on the kagome lattice. The interactions between the spins are chosen along the lines of the Balents-Fisher-Girvin model that is known to host a $\mathbb{Z}_2$ spin liquid and a ferromagnetic phase. The model is amenable to sign free auxiliary field quantum Monte Carlo simulations. While in the ferroma… ▽ More We consider Dirac electrons on the honeycomb lattice Kondo coupled to spin-1/2 degrees of freedom on the kagome lattice. The interactions between the spins are chosen along the lines of the Balents-Fisher-Girvin model that is known to host a $\mathbb{Z}_2$ spin liquid and a ferromagnetic phase. The model is amenable to sign free auxiliary field quantum Monte Carlo simulations. While in the ferromagnetic phase the Dirac electrons acquire a gap, they remain massless in the $\mathbb{Z}_2$ spin liquid phase due to the breakdown of Kondo screening. Since our model has an odd number of spins per unit cell, this phase is a non-Fermi liquid that violates the conventional Luttinger theorem which relates the Fermi surface volume to the particle density in a Fermi liquid. This non-Fermi liquid is a specific realization of the so called fractionalized Fermi liquid proposed in the context of heavy fermions. We probe the Kondo breakdown in this non-Fermi liquid phase via conventional observables such as the spectral function, and also by studying the mutual information between the electrons and the spins. △ Less

Submitted 31 October, 2018; v1 submitted 21 July, 2018; originally announced July 2018.

Comments: 5 pages + 2 pages (SM), 5 figures

Journal ref: Phys. Rev. B 100, 035118 (2019)

Raman Spectral Indicators of Catalyst Decoupling for Transfer of CVD Grown 2D Materials

Authors: Patrick R. Whelan, Bjarke S. Jessena, Ruizhi Wang, Birong Luo, Adam C. Stoot, David M. A. Mackenzie, Philipp Braeuninger-Weimer, Alex Jouvray, Lutz Prager, Luca Camilli, Stephan Hofmann, Peter Bøggild, Timothy J. Booth

Abstract: Through a combination of monitoring the Raman spectral characteristics of 2D materials grown on copper catalyst layers, and wafer scale automated detection of the fraction of transferred material, we reproducibly achieve transfers with over 97.5% monolayer hexagonal boron nitride and 99.7% monolayer graphene coverage, for up to 300 mm diameter wafers. We find a strong correlation between the trans… ▽ More Through a combination of monitoring the Raman spectral characteristics of 2D materials grown on copper catalyst layers, and wafer scale automated detection of the fraction of transferred material, we reproducibly achieve transfers with over 97.5% monolayer hexagonal boron nitride and 99.7% monolayer graphene coverage, for up to 300 mm diameter wafers. We find a strong correlation between the transfer coverage obtained for graphene and the emergence of a lower wavenumber 2D- peak component, with the concurrent disappearance of the higher wavenumber 2D+ peak component during oxidation of the catalyst surface. The 2D peak characteristics can therefore act as an unambiguous predictor of the success of the transfer. The combined monitoring and transfer process presented here is highly scalable and amenable for roll-to-roll processing. △ Less

Submitted 14 May, 2018; originally announced May 2018.

Comments: 18 pages, 6 figures

Journal ref: Carbon, Volume 117, June 2017, Pages 75-81

Dipolar and charged localized excitons in carbon nanotubes

Authors: Jan T. Glückert, Lyudmyla Adamska, Wolfgang Schinner, Matthias S. Hofmann, Stephen K. Doorn, Sergei Tretiak, Alexander Högele

Abstract: We study both experimentally and theoretically the fundamental interplay of exciton localization and polarization in semiconducting single-walled carbon nanotubes. From Stark spectroscopy of individual carbon nanotubes at cryogenic temperatures we identify localized excitons as permanent electric dipoles with dipole moments of up to 1eÅ. Moreover, we demonstrate field-effect doping of localized ex… ▽ More We study both experimentally and theoretically the fundamental interplay of exciton localization and polarization in semiconducting single-walled carbon nanotubes. From Stark spectroscopy of individual carbon nanotubes at cryogenic temperatures we identify localized excitons as permanent electric dipoles with dipole moments of up to 1eÅ. Moreover, we demonstrate field-effect doping of localized excitons with an additional charge which results in defect-localized trions. Our findings provide not only fundamental insight into the microscopic nature of localized excitons in carbon nanotubes, they also signify their potential for sensing applications and may serve as guidelines for molecular engineering of exciton-localizing quantum dots in other atomically thin semiconductors including transition metal dichalcogenides. △ Less

Submitted 26 June, 2017; originally announced June 2017.

Comments: incl. Supplementary Information

Journal ref: Phys. Rev. B 98, 195413 (2018)

Imaging of optically active defects with nanometer resolution

Authors: Jiandong Feng, Hendrik Deschout, Sabina Caneva, Stephan Hofmann, Ivor Lončarić, Predrag Lazić, Aleksandra Radenovic

Abstract: Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a demand for developing direct optical imaging methods that would allow in-situ characterization of individual defects with nanometer resolution. Here, we demonstrate the localiza… ▽ More Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a demand for developing direct optical imaging methods that would allow in-situ characterization of individual defects with nanometer resolution. Here, we demonstrate the localization and quantitative counting of individual optically active defects in monolayer hexagonal boron nitride using single molecule localization microscopy. By exploiting the blinking behavior of defect emitters to temporally isolate multiple emitters within one diffraction limited region, we could resolve two defect emitters with a point-to-point distance down to ten nanometers. The results and conclusion presented in this work add unprecedented dimensions towards future applications of defects in quantum information processing and biological imaging. △ Less

Submitted 20 June, 2017; originally announced June 2017.

Comments: Manuscript has 16 pages and 4 main figures 13 SI figures and additional Supporting material