Imaging the transition from diffusive to Landauer resistivity dipoles
Authors:
David Kämpfer,
Serhii Kovalchuk,
Jonathan K. Hofmann,
Timofey Balashov,
Vasily Cherepanov,
Bert Voigtländer,
Ireneusz Morawski,
F. Stefan Tautz,
Felix Lüpke
Abstract:
A point-like defect in a uniform current-carrying conductor induces a dipole in the electrochemical potential, which counteracts the original transport field. If the mean free path of the carriers is much smaller than the size of the defect, the dipole results from the purely diffusive motion of the carriers around the defect. In the opposite limit, ballistic carriers scatter from the defect $-$ f…
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A point-like defect in a uniform current-carrying conductor induces a dipole in the electrochemical potential, which counteracts the original transport field. If the mean free path of the carriers is much smaller than the size of the defect, the dipole results from the purely diffusive motion of the carriers around the defect. In the opposite limit, ballistic carriers scatter from the defect $-$ for this situation Rolf Landauer postulated the emergence of a residual resistivity dipole (RRD) that is independent of the defect size and thus imposes a fundamental limit on the resistance of the parent conductor in the presence of defects. Here, we study resistivity dipoles around holes of different sizes in two-dimensional Bi films on Si(111). Using scanning tunneling potentiometry to image the dipoles in real space, we find a transition from linear to constant scaling behavior for small hole sizes, manifesting the transition from diffusive to Landauer dipoles. The extracted parameters of the transition allow us to estimate the Fermi wave vector and the carrier mean free path in our Bi films.
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Submitted 17 January, 2025; v1 submitted 20 December, 2024;
originally announced December 2024.
Shear-resistant topology in quasi one-dimensional van der Waals material Bi$_4$Br$_4$
Authors:
Jonathan K. Hofmann,
Hoyeon Jeon,
Saban M. Hus,
Yuqi Zhang,
Mingqian Zheng,
Tobias Wichmann,
An-Ping Li,
Jin-Jian Zhou,
Zhiwei Wang,
Yugui Yao,
Bert Voigtländer,
F. Stefan Tautz,
Felix Lüpke
Abstract:
Bi$_4$Br$_4$ is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with van der Waals (vdW) gaps in between. So far, two different structures have been reported for this compound, $α$-Bi$_4$Br$_4$ and $β$-Bi$_4$Br$_4$ , in both of which neighboring chains are shifted by $\mathbf{b}/2$, i.e.…
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Bi$_4$Br$_4$ is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with van der Waals (vdW) gaps in between. So far, two different structures have been reported for this compound, $α$-Bi$_4$Br$_4$ and $β$-Bi$_4$Br$_4$ , in both of which neighboring chains are shifted by $\mathbf{b}/2$, i.e., half a unit cell vector in the plane, but which differ in their vertical stacking. While the different layer arrangements are known to result in distinct electronic properties, the effect of possible in-plane shifts between the atomic chains remains an open question. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we report a new Bi$_4$Br$_4$(001) structure, with a shift of $\mathbf{b}/3$ between neighboring chains in the plane and AB layer stacking. We determine shear strain to be the origin of this new structure, which can readily result in shifts of neighboring atomic chains because of the weak inter-chain bonding. For the observed $b/3$ structure, the (residual) atomic chain shift corresponds to an in-plane shear strain of $γ\approx7.5\%$. STS reveals a bulk insulating gap and metallic edge states at surface steps, indicating that the new structure is also a higher-order topological insulator, just like $α$-Bi$_4$Br$_4$, in agreement with density functional theory (DFT) calculations.
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Submitted 20 November, 2024;
originally announced November 2024.
