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The effect of magnetic impurity scattering on transport in topological insulators
Authors:
Jesse A. Vaitkus,
Cong Son Ho,
Jared H. Cole
Abstract:
Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried by these edge states as backscattering from impurities and defects is suppressed as long as time-reversal symmetry is not broken. However, applied magnetic fie…
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Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried by these edge states as backscattering from impurities and defects is suppressed as long as time-reversal symmetry is not broken. However, applied magnetic fields or underlying nuclear spin-defects in the substrate can break this time reversal symmetry. In particular, magnetic impurities lead to back-scattering by spin-flip processes. We have investigated the effects of point-wise magnetic impurities on the transport properties of helical edge states in the BHZ model using the Non-Equilibrium Green's Function formalism and compared the results to a semi-analytic approach. Using these techniques we study the influence of impurity strength and spin impurity polarization. We observe a secondary effect of defect-defect interaction that depends on the underlying material parameters which introduces a non-monotonic response of the conductance to defect density. This in turn suggests a qualitative difference in magneto-transport signatures in the dilute and high density spin impurity limits.
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Submitted 21 October, 2021;
originally announced October 2021.
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Sustainable spin current in the time-dependent Rashba system
Authors:
Cong Son Ho,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashb…
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The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashba SOC strength. In addition, the spin precession can be controlled by modulating the modulation frequency of the Rashba SOC strength. It is shown that at high modulation frequency, the precessional motion is suppressed so that the electron spin polarization can be sustained in the 2DEG
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Submitted 17 June, 2020;
originally announced June 2020.
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Tunable spin and orbital polarization in SrTiO3-based heterostructures
Authors:
Cong Son Ho,
Weilong Kong,
Ming Yang,
Andrivo Rusydi,
Mansoor B. A. Jalil
Abstract:
We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes si…
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We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes significant at the higher-energy anti-crossing region. We find that linear RSOC stems from the structural inversion asymmetry (SIA), while the cubic term is induced by both SIA and bulk asymmetry. Furthermore, the SOC strength shows a striking dependence on the tunable heterostructure parameters such as STO thickness and the interfacial electric field which is ascribed to the quantum confinement effect near the LAO/STO interface. The calculated values of the linear and cubic RSOC are in agreement with previous experimental results.
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Submitted 16 June, 2020;
originally announced June 2020.
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Zitterbewegung-mediated RKKY coupling in topological insulator thin films
Authors:
Cong Son Ho,
Zhuo Bin Siu,
Seng Ghee Tan,
Mansoor B. A. Jalil
Abstract:
The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can b…
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The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can be controlled by tuning the film thickness and/or applying an in-plane magnetic field. Moreover, persistent electron wavepacket oscillation can be achieved in the TI thin film system at the phase transition point, which may assist in the experimental detection of the jitter motion (Zitterbewegung). The implications of the microscopic picture of electron motion in explaining other transport-related effects, e.g., electron-mediated RKKY coupling in the TI thin film system, are also discussed.
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Submitted 16 June, 2020;
originally announced June 2020.
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Newton's second law in spin-orbit torque
Authors:
Cong Son Ho,
Seng Ghee Tan,
Shun-Qing Shen,
Mansoor B. A. Jalil
Abstract:
Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force. In Rashba spin-orbit coupling system, the damping-like SOT can be expressed as ${\mathbf T}^\mathrm{so}={\mathbf R}_c\times {\mathbf F}^{\mathrm {so}}$, in anal…
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Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force. In Rashba spin-orbit coupling system, the damping-like SOT can be expressed as ${\mathbf T}^\mathrm{so}={\mathbf R}_c\times {\mathbf F}^{\mathrm {so}}$, in analogy to the classical torque-force relation, where $R_c$ is the effective radius characterizing the Rashba splitting in the momentum space. As a consequence, the magnetic energy is transferred to the conduction electrons, which dissipates through Joule heating at a rate of $({\mathbf j}_e\cdot {\mathbf F}^{\mathrm {so}})$, with $j_e$ being the applied current. Finally, we propose an experimental verification of our findings via measurement of the anisotropic magnetoresistance effect.
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Submitted 29 August, 2018; v1 submitted 5 September, 2017;
originally announced September 2017.
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Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films
Authors:
Cong Son Ho,
Yi Wang,
Zhuo Bin Siu,
Hyunsoo Yang,
Seng Ghee Tan,
Mansoor B. A. Jalil
Abstract:
We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the op…
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We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm.
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Submitted 5 December, 2016; v1 submitted 24 November, 2016;
originally announced November 2016.
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Effect of surface hybridization on RKKY coupling in ferromagnet/topological insulator/ferromagnet trilayer system
Authors:
Cong Son Ho,
Mansoor B. A. Jalil
Abstract:
We theoretically investigate the RKKY exchange coupling between two ferromagnets (FM) separated by a thin topological insulator film (TI). We find an unusual dependence of the RKKY exchange coupling on the TI thickness ($t_{TI}$). First, when $t_{TI}$ decreases, the coupling amplitude increases at first and reaches its maximum value at some critical thickness, below which the amplitude turns to di…
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We theoretically investigate the RKKY exchange coupling between two ferromagnets (FM) separated by a thin topological insulator film (TI). We find an unusual dependence of the RKKY exchange coupling on the TI thickness ($t_{TI}$). First, when $t_{TI}$ decreases, the coupling amplitude increases at first and reaches its maximum value at some critical thickness, below which the amplitude turns to diminish. This trend is attributed to the hybridization between surfaces of the TI film, which opens a gap below critical thickness and thus turns the surfaces into insulating state from semi-metal state. In insulating phase, diamagnetism induced by the gap-opening compensates paramagnetism of Dirac state, resulting in a diminishing magnetic susceptibility and RKKY coupling. For typical parameters, the critical thickness in Bi2Se3 thin film is estimated to be in the range of 3-5 nm.
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Submitted 30 November, 2016; v1 submitted 21 November, 2016;
originally announced November 2016.
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Pulsatile lipid vesicles under osmotic stress
Authors:
Morgan Chabanon,
James C. S. Ho,
Bo Liedberg,
Atul N. Parikh,
Padmini Rangamani
Abstract:
The response of lipid bilayers to osmotic stress is an important part of cellular function. Previously, in [Oglecka et al. 2014], we reported that cell-sized giant unilamellar vesicles (GUVs) exposed to hypotonic media, respond to the osmotic assault by undergoing a cyclical sequence of swelling and bursting events, coupled to the membrane's compositional degrees of freedom. Here, we seek to deepe…
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The response of lipid bilayers to osmotic stress is an important part of cellular function. Previously, in [Oglecka et al. 2014], we reported that cell-sized giant unilamellar vesicles (GUVs) exposed to hypotonic media, respond to the osmotic assault by undergoing a cyclical sequence of swelling and bursting events, coupled to the membrane's compositional degrees of freedom. Here, we seek to deepen our quantitative understanding of the essential pulsatile behavior of GUVs under hypotonic conditions, by advancing a comprehensive theoretical model for vesicle dynamics. The model quantitatively captures our experimentally measured swell-burst parameters for single-component GUVs, and reveals that thermal fluctuations enable rate dependent pore nucleation, driving the dynamics of the swell-burst cycles. We further identify new scaling relationships between the pulsatile dynamics and GUV properties. Our findings provide a fundamental framework that has the potential to guide future investigations on the non-equilibrium dynamics of vesicles under osmotic stress.
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Submitted 2 May, 2017; v1 submitted 18 August, 2016;
originally announced August 2016.
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The role of exchange interaction in nitrogen vacancy centre-based magnetometry
Authors:
Cong Son Ho,
Seng Ghee Tan,
Mansoor B. A. Jalil,
Zilong Chen,
Leonid A. Krivitsky
Abstract:
We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with the FMH, the exchange energy is comparable to, and may even surpass the magnetostatic interaction energy. This calls for the need to consider and utilize both ef…
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We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with the FMH, the exchange energy is comparable to, and may even surpass the magnetostatic interaction energy. This calls for the need to consider and utilize both effects in magnetometry based on NVC's in diamond. As the distance between the FMH and NVC is decreased to the sub-nanometer scale, the exponential increase in the exchange energy suggests spintronic applications of NVC beyond magnetometry, such as detection of spin-Hall effect or spin currents.
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Submitted 26 October, 2016; v1 submitted 26 July, 2016;
originally announced July 2016.
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Gate-control of spin-motive force and spin-torque in Rashba SOC systems
Authors:
Cong Son Ho,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time modulation of the Rashba coupling $α_R$, which induces an additional electric field $E^R_d={\dot α_R} m_e/e\hbar({\hat z}\times {\mathbf m})$. When the modulation freq…
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The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time modulation of the Rashba coupling $α_R$, which induces an additional electric field $E^R_d={\dot α_R} m_e/e\hbar({\hat z}\times {\mathbf m})$. When the modulation frequency is higher than the magnetization precessing frequency, the amplitude of this field is significantly larger than previously predicted results. Correspondingly, the spin torque on the magnetization is also effectively enhanced. Additionally, the nature of SOC induced spin torque in the system can be transformed from damping to antidamping-like by modulating ${\dot α_R}$. We also suggest a biasing scheme to achieve rectification of SMF, {\it i.e.}, by application of a square wave voltage at the resonant frequency. Finally, we numerically estimate the resulting spin torque field arising from a Gaussian pulse time modulation of $α_R$.
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Submitted 6 December, 2015; v1 submitted 12 March, 2015;
originally announced March 2015.
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Spin force and intrinsic spin Hall effect in spintronics systems
Authors:
Cong Son Ho,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubo's formula. This simple spin force picture giv…
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We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubo's formula. This simple spin force picture gives a clear and intuitive explanation for SHE.
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Submitted 10 April, 2014;
originally announced April 2014.
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Spin force and the generation of sustained spin current in time-dependent Rashba and Dresselhauss systems
Authors:
Cong Son Ho,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
The generation of spin current and spin polarization in a 2DEG structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the lon…
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The generation of spin current and spin polarization in a 2DEG structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the longitudinal component of the spin force induces a transverse spin current. For a constant (time-invariant) Rashba system, we recover the universal spin Hall conductivity of $\frac e{8π}$, derived previously via the Berry phase and semiclassical methods. In the case of a time-dependent SOC system, the spin current is sustained even under strong impurity scattering. We evaluated the ac spin current generated by a time-modulated Rashba SOC in the absence of any dc electric field. The magnitude of the spin current reaches a maximum when the modulation frequency matches the Larmor frequency of the electrons.
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Submitted 17 May, 2013;
originally announced May 2013.
