Showing 1–21 of 21 results for author: Hirakawa, K

Coherent interaction of a-few-electron quantum dot with a terahertz optical resonator

Authors: Kazuyuki Kuroyama, Jinkwan Kwoen, Yasuhiko Arakawa, Kazuhiko Hirakawa

Abstract: We have investigated light-matter hybrid excitations in a quantum dot (QD)-terahertz (THz) optical resonator coupled system. We fabricate a gate-defined QD in the vicinity of a THz split-ring resonator (SRR) by using a AlGaAs/GaAs two-dimensional electron system (2DES). By illuminating the system with THz radiation, the QD shows a current change whose spectrum exhibits coherent coupling between th… ▽ More We have investigated light-matter hybrid excitations in a quantum dot (QD)-terahertz (THz) optical resonator coupled system. We fabricate a gate-defined QD in the vicinity of a THz split-ring resonator (SRR) by using a AlGaAs/GaAs two-dimensional electron system (2DES). By illuminating the system with THz radiation, the QD shows a current change whose spectrum exhibits coherent coupling between the electrons in the QD and the SRR as well as coupling between the 2DES and the SRR. The latter coupling enters the ultrastrong coupling regime and the coupling between the QD and the SRR is also very close to the ultrastrong coupling regime, despite the fact that only a few electrons reside in the QD. △ Less

Submitted 9 March, 2023; v1 submitted 22 April, 2022; originally announced April 2022.

Thermal conductivity minimum of graded superlattices due to phonon localization

Authors: Yangyu Guo, Marc Bescond, Zhongwei Zhang, Shiyun Xiong, Kazuhiko Hirakawa, Masahiro Nomura, Sebastian Volz

Abstract: The Anderson localization of thermal phonons has been shown only in few nano-structures with strong random disorder by the exponential decay of transmission to zero and a thermal conductivity maximum when increasing system length. In this work, we present a path to demonstrate the phonon localization with distinctive features in graded superlattices with short-range order and long-range disorder.… ▽ More The Anderson localization of thermal phonons has been shown only in few nano-structures with strong random disorder by the exponential decay of transmission to zero and a thermal conductivity maximum when increasing system length. In this work, we present a path to demonstrate the phonon localization with distinctive features in graded superlattices with short-range order and long-range disorder. A thermal conductivity minimum with system length appears due to the exponential decay of transmission to a non-zero constant, which is a feature of partial phonon localization caused by the moderate disorder. We provide clear evidence of localization through the combined analysis of the participation ratio, transmission, and real-space phonon number density distribution based on our quantum transport simulation. The present work would promote heat conduction engineering by localization via the wave nature of phonons. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Journal ref: APL Mater. 9, 091104 (2021)

Giant enhancement in the thermal responsivity of microelectromechanical resonators by internal mode coupling

Authors: Ya Zhang, Ryoka Kondo, Boqi Qiu, Xin Liu, Kazuhiko Hirakawa

Abstract: We report on a giant enhancement in the thermal responsivity of the doubly-clamped GaAs microelectromechanical (MEMS) beam resonators by using the internal mode coupling effect. This is achieved by coupling the fundamental bending mode with the fundamental torsional mode of the MEMS beam resonators through the cubic Duffing nonlinearity. In the mode coupling regime, we have found that, when the in… ▽ More We report on a giant enhancement in the thermal responsivity of the doubly-clamped GaAs microelectromechanical (MEMS) beam resonators by using the internal mode coupling effect. This is achieved by coupling the fundamental bending mode with the fundamental torsional mode of the MEMS beam resonators through the cubic Duffing nonlinearity. In the mode coupling regime, we have found that, when the input heat to the MEMS resonators is modulated at a particular frequency, the resonance frequency shift caused by heating can be enhanced by almost two orders of magnitude. The observed effect is promising for realizing high-sensitivity thermal sensing by using MEMS resonators, such as ultrasensitive terahertz detection at room temperature. △ Less

Submitted 14 June, 2020; v1 submitted 23 March, 2020; originally announced March 2020.

Comments: 5 figures

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

Authors: Janice Ruth Bayogan, Kidong Park, Zhuo Bin Siu, Sung Jin An, Chiu-Chun Tang, Xiao-Xiao Zhang, Man Suk Song, Jeunghee Park, Mansoor B. A. Jalil, Naoto Nagaosa, Kazuhiko Hirakawa, Christian Schönenberger, Jungpil Seo, Minkyung Jung

Abstract: We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically w… ▽ More We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics. △ Less

Submitted 10 September, 2019; originally announced September 2019.

Journal ref: Nanotechnology 31, 205001 (2020)

Rattling motion of a single atom in a fullerene cage molecule sensed by terahertz spectroscopy

Authors: Shaoqing Du, Ya Zhang, Kenji Yoshida, Kazuhiko Hirakawa

Abstract: Upon the discovery of the superatom states in endohedral metallofullerenes (EMFs), the superatom properties have become attractive, because ultrafast motion of the trapped atom modifies the charge distribution in the fullerene cage. However, the observation of ultrafast atom motion in the fullerene cage is very challenging, since dynamical processes take place in the terahertz (THz) frequency rang… ▽ More Upon the discovery of the superatom states in endohedral metallofullerenes (EMFs), the superatom properties have become attractive, because ultrafast motion of the trapped atom modifies the charge distribution in the fullerene cage. However, the observation of ultrafast atom motion in the fullerene cage is very challenging, since dynamical processes take place in the terahertz (THz) frequency range in a picometer region. Here, we report on the THz spectroscopy of single Ce@C82 EMF molecules by using the single molecule transistor geometry. Due to the vibron-assisted tunneling process, two broad photocurrent peaks are observed in the THz spectra and are ascribed to the bending and stretching motions of the encapsulated single Ce atom. This work demonstrates that THz spectroscopy using nanogap electrodes can detect a motion of a single atom, opening a door to ultrafast THz nanoscience on the picometer-scale. △ Less

Submitted 19 April, 2019; originally announced April 2019.

Quantum dots formed in three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

Authors: Minkyung Jung, Kenji Yoshida, Kidong Park, Xiao-Xiao Zhang, Can Yesilyurt, Zhuo Bin Siu, Mansoor B. A. Jalil, Jinwan Park, Jeunghee Park, Naoto Nagaosa, Jungpil Seo, Kazuhiko Hirakawa

Abstract: We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably,… ▽ More We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd$_{3}$As$_{2}$ nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p$-$type QD can be formed between two n$-$type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p$-$n junctions formed between the p$-$type QD and two neighboring n$-$type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p$-$type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals. △ Less

Submitted 16 December, 2018; originally announced December 2018.

Single-electron charge sensing in self-assembled quantum dots

Authors: Haruki Kiyama, Alexander Korsch, Naomi Nagai, Yasushi Kanai, Kazuhiko Matsumoto, Kazuhiko Hirakawa, Akira Oiwa

Abstract: Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interfa… ▽ More Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots. △ Less

Submitted 7 December, 2018; originally announced December 2018.

Comments: 15 pages, 5 figures

Journal ref: Scientific Reports 8, 13188 (2018)

Terahertz dynamics of electron-vibron coupling in single molecules with tunable electrostatic potential

Authors: Shaoqing Du, Kenji Yoshida, Ya Zhang, Ikutaro Hamada, Kazuhiko Hirakawa

Abstract: Clarifying electronic and vibronic properties at individual molecule level provides key insights to future chemistry, nanoelectronics, and quantum information technologies. The single electron tunneling spectroscopy has been used to study the charging/discharging process in single molecules. The obtained information was, however, mainly on static electronic properties, and access to their dynamica… ▽ More Clarifying electronic and vibronic properties at individual molecule level provides key insights to future chemistry, nanoelectronics, and quantum information technologies. The single electron tunneling spectroscopy has been used to study the charging/discharging process in single molecules. The obtained information was, however, mainly on static electronic properties, and access to their dynamical properties was very indirect. Here, we report on the terahertz (THz) spectroscopy of single fullerene molecules by using a single molecule transistor (SMT) geometry. From the time-domain THz autocorrelation measurements, we have obtained THz spectra associated with the THz-induced center-of-mass oscillation of the molecules. The observed peaks are finely split into two, reflecting the difference in the van der Waals potential profile experienced by the molecule on the metal surface when the number of electrons on the molecule fluctuates by one during the single electron tunneling process. Such an ultrahigh-sensitivity to the electronic/vibronic structures of a single molecule upon adding/removing a single electron has been achieved by using the THz spectroscopy in the SMT geometry. This novel scheme provides a new opportunity for investigating ultrafast THz dynamics of sub-nm scale systems. △ Less

Submitted 20 December, 2017; originally announced December 2017.

Superconducting Transport in single and parallel double InAs Quantum Dot Josephson Junctions with Nb-based Superconducting Electrodes

Authors: Shoji Baba, Juergen Sailer, Russell S. Deacon, Akira Oiwa, Kenji Shibata, Kazuhiko Hirakawa, Seigo Tarucha

Abstract: We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots we observe an enhanced supercurrent when both do… ▽ More We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling. △ Less

Submitted 8 December, 2015; originally announced December 2015.

Comments: 13 pages, 4 figures and supplemental material

Journal ref: Appl. Phys. Lett. 107, 222602 (2015)

Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots

Authors: S. Takahashi, R. S. Deacon, A. Oiwa, K. Shibata, K. Hirakawa, S. Tarucha

Abstract: Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from… ▽ More Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential. △ Less

Submitted 1 March, 2013; originally announced March 2013.

Comments: 5 pages, 5 figures

π junction transition in InAs self-assembled quantum dot coupled with SQUID

Authors: S. Kim, R. Ishiguro, M. Kamio, Y. Doda, E. Watanebe, K. Shibata, K. Hirakawa, H. Takayanagi

Abstract: We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SA… ▽ More We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire new future quantum information devices which can link optical, spin, and superconducting state. △ Less

Submitted 28 October, 2010; originally announced October 2010.

Comments: 3 pages

Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction

Authors: Y. Kanai, R. S. Deacon, A. Oiwa, K. Yoshida, K. Shibata, K. Hirakawa, S. Tarucha

Abstract: We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the comp… ▽ More We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitative agreement with theoretical predictions. △ Less

Submitted 16 December, 2009; originally announced December 2009.

Journal ref: Phys. Rev. B 82, 054512 (2010)

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

Authors: K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, S. Ishida, T. Taniyama, K. Hirakawa, Y. Arakawa, T. Machida

Abstract: We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tu… ▽ More We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD. △ Less

Submitted 24 June, 2009; v1 submitted 16 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures + 2 appendix figures

Journal ref: Phys. Rev. Lett. 102, 236806 (2009)

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Authors: S. Masubuchi, M. Ono, K. Yoshida, K. Hirakawa, T. Machida

Abstract: We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphen… ▽ More We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices. △ Less

Submitted 29 November, 2008; originally announced December 2008.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 94, 082107 (2009).

High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Authors: K. Shibata, K. Hirakawa

Abstract: We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temper… ▽ More We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures. △ Less

Submitted 19 August, 2008; originally announced August 2008.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 93, 062101 (2008)

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Authors: K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. Machida, T. Taniyama, S. Ishida, Y. Arakawa

Abstract: Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gr… ▽ More Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes. △ Less

Submitted 15 December, 2007; v1 submitted 14 November, 2007; originally announced November 2007.

Comments: 4 pages, 3 figures

Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

Authors: K. Shibata, C. Buizert, A. Oiwa, K. Hirakawa, S. Tarucha

Abstract: We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where… ▽ More We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system. △ Less

Submitted 13 November, 2007; originally announced November 2007.

Journal ref: APPLIED PHYSICS LETTERS 91, 112102 (2007)

Kondo Universal Scaling for a Quantum Dot Coupled to Superconducting Leads

Authors: Christo Buizert, Akira Oiwa, Kenji Shibata, Kazuhiro Hirakawa, Seigo Tarucha

Abstract: We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Due to Kondo enhancement of Andreev reflections the zero-bias anomaly develops sidepeaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T_K we tune the gap Delta with an external magnetic field. W… ▽ More We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Due to Kondo enhancement of Andreev reflections the zero-bias anomaly develops sidepeaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T_K we tune the gap Delta with an external magnetic field. We find that the zero-bias conductance in each case collapses onto a single curve with Delta/kT_K as the only relevant energy scale, providing experimental evidence for universal scaling in this system. △ Less

Submitted 9 October, 2007; originally announced October 2007.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 99, 136806 (2007)

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

Authors: K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. Machida, S. Ishida, Y. Arakawa

Abstract: We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate vo… ▽ More We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition. △ Less

Submitted 30 August, 2007; v1 submitted 4 June, 2007; originally announced June 2007.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 91, 022107 (2007)

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

Authors: K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata, K. Hirakawa, T. Taniyama, S. Ishida, Y. Arakawa

Abstract: We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage. We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage. △ Less

Submitted 1 February, 2007; v1 submitted 9 November, 2006; originally announced November 2006.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 90, 053108 (2007)

Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

Authors: K. Hamaya, S. Masubuchi, K. Hirakawa, S. Ishida, Y. Arakawa, K. Sawano, Y. Shiraki, T. Machida

Abstract: We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field d… ▽ More We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction. △ Less

Submitted 16 March, 2006; originally announced March 2006.

Comments: 5 pages, 5 figures, to appear in Phys. Rev. B (Rapid Communications)