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In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
Authors:
Olivio Chiatti,
Johannes Boy,
Christian Heyn,
Wolfgang Hansen,
Saskia F. Fischer
Abstract:
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about 6.8$\times$10$^{11}$ cm$^{-2}$,…
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The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about 6.8$\times$10$^{11}$ cm$^{-2}$, mobility of 1.8$\times$10$^5$ cm$^2$/Vs and an effective mass of 0.042$m_e$ after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé-factor of |g$^*$| = 16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors $ν$ = 1 und $ν$ = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by $Δ$B $\approx$ 0.1 T and is consistent with an effective magnetic field of B$_{eff}$ $\approx$ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.
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Submitted 7 February, 2024; v1 submitted 23 December, 2022;
originally announced December 2022.
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Three-Terminal Energy Harvester with Coupled Quantum Dots
Authors:
Holger Thierschmann,
Rafael Sánchez,
Björn Sothmann,
Fabian Arnold,
Christian Heyn,
Wolfgang Hansen,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
Rectification of thermal fluctuations in mesoscopic conductors is the key idea of today's attempts to build nanoscale thermoelectric energy harvesters in order to convert heat into a useful electric power. So far, most concepts make use of the Seebeck effect in a two-terminal geometry where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working prin…
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Rectification of thermal fluctuations in mesoscopic conductors is the key idea of today's attempts to build nanoscale thermoelectric energy harvesters in order to convert heat into a useful electric power. So far, most concepts make use of the Seebeck effect in a two-terminal geometry where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently using two capacitively coupled quantum dots. We show that due to its novel three-terminal design which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled in our device. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal, highly efficient nanoscale heat engines.
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Submitted 28 March, 2016;
originally announced March 2016.
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Thermal Gating of Charge Currents with Coulomb Coupled Quantum Dots
Authors:
Holger Thierschmann,
Fabian Arnold,
Marcel Mittermüller,
Luis Maier,
Christian Heyn,
Wolfgang Hansen,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the t…
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We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.
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Submitted 10 February, 2015;
originally announced February 2015.
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Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
Authors:
Olivio Chiatti,
Sven S. Buchholz,
Christian Heyn,
Wolfgang Hansen,
Mehdi Pakmehr,
Bruce D. McCombe,
Saskia F. Fischer
Abstract:
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quan…
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Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4 nm InAs inserted channel. The two-dimensional electron gas is at 53 nm depth and has a carrier density of about $6\times10^{11}$ cm$^{-2}$ and mobility of about $2\times10^{5}$ cm$^2$/Vs, after illumination. Electrical and THz optical transport measurements at low temperatures and in high magnetic fields reveal an effective mass of 0.038$m_{0}$ and an anisotropic $g$-factor of up to 20, larger than for bulk InAs or InAs-based heterostructures. We demonstrate that quasi-one-dimensional channels can be formed by micro-laser lithography. The population of subbands is controlled by in-plane gates. Contrary to previous reports symmetric and asymmetric in-plane gate voltages applied to quasi-one dimensional channels did not show indications of SOI-induced anomalies in the conductance.
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Submitted 9 February, 2015; v1 submitted 30 October, 2014;
originally announced October 2014.
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Enhanced quantum oscillatory magnetization and non-equilibrium currents in an interacting two-dimensional electron system in MgZnO/ZnO with repulsive scatterers
Authors:
M. Brasse,
S. M. Sauther,
J. Falson,
Y. Kozuka,
A. Tsukazaki,
Ch. Heyn,
M. A. Wilde,
M. Kawasaki,
D. Grundler
Abstract:
Torque magnetometry at low temperature and in high magnetic fields B is performed on a MgZnO/ZnO heterostructure incorporating a high-mobility two-dimensional electron system. We find a sawtooth-like quantum oscillatory magnetization M(B), i.e., the de Haas-van Alphen (dHvA) effect. At the same time, unexpected spike-like overshoots in M and non-equilibrium currents are observed which allow us to…
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Torque magnetometry at low temperature and in high magnetic fields B is performed on a MgZnO/ZnO heterostructure incorporating a high-mobility two-dimensional electron system. We find a sawtooth-like quantum oscillatory magnetization M(B), i.e., the de Haas-van Alphen (dHvA) effect. At the same time, unexpected spike-like overshoots in M and non-equilibrium currents are observed which allow us to identify the microscopic nature and density of the residual disorder. The acceptor-like scatterers give rise to a magnetic thaw down effect which enhances the dHvA amplitude beyond the electron-electron interaction effects being present in the MgZnO/ZnO heterostructure
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Submitted 12 July, 2013;
originally announced July 2013.
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Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes
Authors:
Cornelius S. Bausch,
Aune Koitmäe,
Eric Stava,
Amanda Price,
Pedro J. Resto,
Yu Huang,
David Sonnenberg,
Yuliya Stark,
Christian Heyn,
Justin C. Williams,
Erik W. Dent,
Robert H. Blick
Abstract:
We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the a…
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We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.
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Submitted 6 May, 2013;
originally announced May 2013.
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Zero-field thermopower of a thin heterostructure membrane with a 2D electron gas
Authors:
M. Schmidt,
G. Schneider,
Ch. Heyn,
A. Stemmann,
W. Hansen
Abstract:
We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34 μm length are prepared from GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Joule heating on the central region of the membrane generates a therma…
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We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34 μm length are prepared from GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Joule heating on the central region of the membrane generates a thermal gradient with respect to the suspension points where the membrane is attached to cold reservoirs. Temperature measurements on the membrane reveal strong thermal gradients due to the low thermal conductivity. We measure the zero-field thermopower and find that the phonon-drag contribution is suppressed at low temperatures up to 7 K.
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Submitted 5 November, 2011;
originally announced November 2011.
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Thermopower of a 2D electron gas in suspended AlGaAs/GaAs heterostructures
Authors:
M. Schmidt,
G. Schneider,
Ch. Heyn,
A. Stemmann,
W. Hansen
Abstract:
We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to bulk material so that it is possible to establish a strong thermal gradient along the 2DEG even at a distance of few micrometers. We find that the zero-field therm…
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We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to bulk material so that it is possible to establish a strong thermal gradient along the 2DEG even at a distance of few micrometers. We find that the zero-field thermopower is significantly affected by the micro patterning. In contrast to 2DEGs incorporated in a bulk material, the diffusion contribution to the thermopower stays dominant up to a temperature of 7 K until the phonon-drag becomes strong and governs the run of the thermopower. We also find that the coupling between electrons and phonons in the phonon-drag regime is due to screened deformation potentials, in contrast to piezoelectric coupling found with bulk phonons.
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Submitted 5 November, 2011;
originally announced November 2011.
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Thermal Conductance of Ballistic Point Contacts
Authors:
Thorben Bartsch,
Matthias Schmidt,
Christian Heyn,
Wolfgang Hansen
Abstract:
We study the thermal conductance of ballistic point contacts. These contacts are realized as few nanometer long pillars in so called air-gap heterostructures (AGHs). The pillar length being much smaller that the mean free path of the phonons up to room temperature. Due to the small dimension and the low density of the pillars the thermal conductance of the AGHs is several orders of magnitude reduc…
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We study the thermal conductance of ballistic point contacts. These contacts are realized as few nanometer long pillars in so called air-gap heterostructures (AGHs). The pillar length being much smaller that the mean free path of the phonons up to room temperature. Due to the small dimension and the low density of the pillars the thermal conductance of the AGHs is several orders of magnitude reduced in comparison to bulk structures. The measurement results are in quantitative agreement with a simple model that based on the Boltzmann transport equation.
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Submitted 4 November, 2011;
originally announced November 2011.
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Enhanced Transmission in Rolled-up Hyperlenses utilizing Fabry-Peŕot Resonances
Authors:
Jochen Kerbst,
Stephan Schwaiger,
Andreas Rottler,
Aune Koitmäe,
Markus Bröll,
Andrea Stemmann,
Christian Heyn,
Detlef Heitmann,
Stefan Mendach
Abstract:
We experimentally demonstrate that the transmission though rolled-up metal/semiconductor hyperlenses can be enhanced at desired frequencies utilizing Fabry-Pérot resonances. By means of finite difference time domain simulations we prove that hyperlensing occurs at frequencies of high transmission.
We experimentally demonstrate that the transmission though rolled-up metal/semiconductor hyperlenses can be enhanced at desired frequencies utilizing Fabry-Pérot resonances. By means of finite difference time domain simulations we prove that hyperlensing occurs at frequencies of high transmission.
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Submitted 8 July, 2011;
originally announced July 2011.
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Gain in Three-Dimensional Metamaterials utilizing Semiconductor Quantum Structures
Authors:
Stephan Schwaiger,
Matthias Klingbeil,
Jochen Kerbst,
Andreas Rottler,
Ricardo Costa,
Aune Koitmäe,
Markus Bröll,
Christian Heyn,
Yuliya Stark,
Detlef Heitmann,
Stefan Mendach
Abstract:
We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a three-dimensional superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show tha…
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We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a three-dimensional superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.
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Submitted 12 April, 2011;
originally announced April 2011.
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Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy
Authors:
Tim Köppen,
Dennis Franz,
Andreas Schramm,
Christian Heyn,
Johann Gutjahr,
Daniela Pfannkuche,
Detlef Heitmann,
Tobias Kipp
Abstract:
We report on resonant optical spectroscopy of self-assembled InGaAs quantum dots in which the number of electrons can accurately be tuned to N=0,1,2 by an external gate voltage. Polarization, wave vector and magnetic field dependent measurements enable us to clearly distinguish between resonant Raman and resonant photoluminescence processes. The Raman spectra for N=1 and 2 electrons considerably d…
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We report on resonant optical spectroscopy of self-assembled InGaAs quantum dots in which the number of electrons can accurately be tuned to N=0,1,2 by an external gate voltage. Polarization, wave vector and magnetic field dependent measurements enable us to clearly distinguish between resonant Raman and resonant photoluminescence processes. The Raman spectra for N=1 and 2 electrons considerably differ from each other. In particular, for N=2, the quantum-dot He, the spectra exhibit both singlet and triplet transitions reflecting the elementary many-particle interaction. Also the resonant photoluminescence spectra are significantly changing by varying the number of electrons in the QDs. For N=1 we observe strong polaronic effects which are suppressed for N=2.
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Submitted 8 December, 2010;
originally announced December 2010.
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Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser
Authors:
Ch. Strelow,
M. Sauer,
S. Fehringer,
T. Korn,
C. Schüller,
A. Stemmann,
Ch. Heyn,
D. Heitmann,
T. Kipp
Abstract:
We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold. We observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calcul…
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We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold. We observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calculated by rate equations.
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Submitted 4 November, 2009;
originally announced November 2009.
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Imaging correlated wave functions of few-electron quantum dots: Theory and scanning tunneling spectroscopy experiments
Authors:
Massimo Rontani,
Elisa Molinari,
Giuseppe Maruccio,
Martin Janson,
Andreas Schramm,
Christian Meyer,
Tomohiro Matsui,
Christian Heyn,
Wolfgang Hansen,
Roland Wiesendanger
Abstract:
We show both theoretically and experimentally that scanning tunneling spectroscopy (STS) images of semiconductor quantum dots may display clear signatures of electron-electron correlation. We apply many-body tunneling theory to a realistic model which fully takes into account correlation effects and dot anisotropy. Comparing measured STS images of freestanding InAs quantum dots with those calcul…
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We show both theoretically and experimentally that scanning tunneling spectroscopy (STS) images of semiconductor quantum dots may display clear signatures of electron-electron correlation. We apply many-body tunneling theory to a realistic model which fully takes into account correlation effects and dot anisotropy. Comparing measured STS images of freestanding InAs quantum dots with those calculated by the full configuration interaction method, we explain the wave function sequence in terms of images of one- and two-electron states. The STS map corresponding to double charging is significantly distorted by electron correlation with respect to the non-interacting case.
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Submitted 2 August, 2007;
originally announced August 2007.
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Correlation Effects in Wave Function Mapping of Molecular Beam Epitaxy Grown Quantum Dots
Authors:
Giuseppe Maruccio,
Martin Janson,
Andreas Schramm,
Christian Meyer,
Tomohiro Matsui,
Christian Heyn,
Wolfgang Hansen,
Roland Wiesendanger,
Massimo Rontani,
Elisa Molinari
Abstract:
We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum dots by tunneling spectroscopy and wave function (WF) mapping at high tunneling currents where electron-electron interactions become relevant. Four clearly resolved states are found, whose approximate symmetries are roughly s and p, in order of increasing energy. Because the major axes of the p-like stat…
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We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum dots by tunneling spectroscopy and wave function (WF) mapping at high tunneling currents where electron-electron interactions become relevant. Four clearly resolved states are found, whose approximate symmetries are roughly s and p, in order of increasing energy. Because the major axes of the p-like states coincide, the WF sequence is inconsistent with the imaging of independent-electron orbitals. The results are explained in terms of many-body tunneling theory, by comparing measured maps with those calculated by taking correlation effects into account.
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Submitted 31 July, 2007;
originally announced July 2007.
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Three-Dimensionally Confined Optical Modes in Quantum Well Microtube Ring Resonators
Authors:
Ch. Strelow,
C. M. Schultz,
H. Rehberg,
H. Welsch,
Ch. Heyn,
D. Heitmann,
T. Kipp
Abstract:
We report on microtube ring resonators with quantum wells embedded as an optically active material. Optical modes are observed over a broad energy range. Their properties strongly depend on the exact geometry of the microtube along its axis. In particular we observe (i) preferential emission of light on the inside edge of the microtube and (ii) confinement of light also in direction of the tube…
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We report on microtube ring resonators with quantum wells embedded as an optically active material. Optical modes are observed over a broad energy range. Their properties strongly depend on the exact geometry of the microtube along its axis. In particular we observe (i) preferential emission of light on the inside edge of the microtube and (ii) confinement of light also in direction of the tube axis by an axially varying geometry which is explained in an expanded waveguide model.
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Submitted 30 April, 2007;
originally announced April 2007.
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Quantized Dispersion of Two-Dimensional Magnetoplasmons Detected by Photoconductivity Spectroscopy
Authors:
S. Holland,
Ch. Heyn,
D. Heitmann,
E. Batke,
R. Hey,
K. J. Friedland,
C. -M. Hu
Abstract:
We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and t…
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We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.
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Submitted 30 June, 2004;
originally announced June 2004.
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Far-infrared photo-conductivity of electrons in an array of nano-structured antidots
Authors:
K. Bittkau,
Ch. Menk,
Ch. Heyn,
D. Heitmann,
C. -M. Hu
Abstract:
We present far-infrared (FIR) photo-conductivity measurements for a two-dimensional electron gas in an array of nano-structured antidots. We detect, resistively and spectrally resolved, both the magnetoplasmon and the edge-magnetoplasmon modes. Temperature-dependent measurements demonstrates that both modes contribute to the photo resistance by heating the electron gas via resonant absorption of…
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We present far-infrared (FIR) photo-conductivity measurements for a two-dimensional electron gas in an array of nano-structured antidots. We detect, resistively and spectrally resolved, both the magnetoplasmon and the edge-magnetoplasmon modes. Temperature-dependent measurements demonstrates that both modes contribute to the photo resistance by heating the electron gas via resonant absorption of the FIR radiation. Influences of spin effect and phonon bands on the collective excitations in the antidot lattice are observed.
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Submitted 23 July, 2003;
originally announced July 2003.
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Oscillator strengths of dark charged excitons in the quantum Hall regime
Authors:
C. Schueller,
K. -B. Broocks,
Ch. Heyn,
D. Heitmann
Abstract:
By direct absorption spectroscopy and comparison to photoluminescence (PL), we investigate negatively charged excitons in dilute two-dimensional electron systems at temperatures down to T=40 mK in the regime of the fractional quantum Hall effect. At very low temperatures, for filling factor ν< 1/3, an additional excitation appears in the PL spectrum, between the well-known singlet and triplet ex…
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By direct absorption spectroscopy and comparison to photoluminescence (PL), we investigate negatively charged excitons in dilute two-dimensional electron systems at temperatures down to T=40 mK in the regime of the fractional quantum Hall effect. At very low temperatures, for filling factor ν< 1/3, an additional excitation appears in the PL spectrum, between the well-known singlet and triplet excitons. The observation of a similar excitation by PL was reported very recently [G. Yusa et al., cond-mat0103561], and the excitation was assigned, in spite of a PL intensity similar to that of the neutral exciton, to be due to a dark triplet exciton. By comparing PL and direct absorption spectra in optically thin samples at T<100 mK, we can identify the new excitation indeed as a 'dark' mode, since we find that the oscillator strength is much smaller than those of the 'bright' modes.
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Submitted 8 October, 2001;
originally announced October 2001.
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Far-Infrared Excitations below the Kohn Mode: Internal Motion in a Quantum Dot
Authors:
Roman Krahne,
Vidar Gudmundsson,
Christian Heyn,
Detlef Heitmann
Abstract:
We have investigated the far-infrared response of quantum dots in modulation doped GaAs heterostructures. We observe novel modes at frequencies below the center-of-mass Kohn mode. Comparison with Hartree-RPA calculations show that these modes arise from the flattened potential in our field-effect confined quantum dots. They reflect pronounced relative motion of the charge density with respect to…
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We have investigated the far-infrared response of quantum dots in modulation doped GaAs heterostructures. We observe novel modes at frequencies below the center-of-mass Kohn mode. Comparison with Hartree-RPA calculations show that these modes arise from the flattened potential in our field-effect confined quantum dots. They reflect pronounced relative motion of the charge density with respect to the center-of-mass.
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Submitted 1 February, 2001;
originally announced February 2001.
