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Tunable quantum interference in bilayer graphene in double-resonant Raman scattering
Authors:
Felix Herziger,
Christoph Tyborski,
Oliver Ochedowski,
Marika Schleberger,
Janina Maultzsch
Abstract:
The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter $γ$. We demonstrate that the ratio between symmetric and a…
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The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter $γ$. We demonstrate that the ratio between symmetric and anti-symmetric scattering processes sensitively depends on the lifetime of the electronic states, explaining the experimentally observed variation of the complex $2D$-mode line shape.
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Submitted 18 December, 2018;
originally announced December 2018.
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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
Authors:
Sudipta Dubey,
Simone Lisi,
Goutham Nayak,
Felix Herziger,
Van-Dung Nguyen,
Toai Le Quang,
Vladimir Cherkez,
César González,
Yannick J. Dappe,
Kenji Watanabe,
Takashi Taniguchi,
Laurence Magaud,
Pierre Mallet,
Jean-Yves Veuillen,
Raul Arenal,
Laëtitia Marty,
Julien Renard,
Nedjma Bendiab,
Johann Coraux,
Vincent Bouchiat
Abstract:
Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using diffe…
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Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 -- a natural one and one prepared at high pressure and high temperature -- and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS2. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.
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Submitted 7 May, 2018;
originally announced May 2018.
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Direct growth of low-doped graphene on Ge/Si(001) surfaces
Authors:
J. Dabrowski,
G. Lippert,
J. Avila,
J. Baringhaus,
I. Colambo,
Yu. S. Dedkov,
F. Herziger,
G. Lupina,
J. Maultzsch,
T. Schaffus,
T. Schroeder,
M. Sowinska,
C. Tegenkamp,
D. Vignaud,
M. -C. Asensio
Abstract:
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD an…
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The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^\circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
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Submitted 8 April, 2016;
originally announced April 2016.
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In-situ Raman study of laser-induced graphene oxidation
Authors:
Felix Herziger,
Rasim Mirzayev,
Emanuele Poliani,
Janina Maultzsch
Abstract:
We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its evolution over time. Our results show that the laser-induced oxidation process is divided into two separate stages, namely tensile strain due to heating and subseque…
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We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its evolution over time. Our results show that the laser-induced oxidation process is divided into two separate stages, namely tensile strain due to heating and subsequent $p$-type doping due to oxygen binding. We discuss the temporal evolution of the $D/G$-mode ratio during oxidation and explain the unexpected steady decrease of the defect-induced $D$ mode at long irradiation times. Our results provide a deeper understanding of the oxidation process in single-layer graphene and demonstrate the possibility of sub-$μ$m patterning of graphene by an optical method.
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Submitted 14 August, 2015;
originally announced August 2015.
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Understanding double-resonant Raman scattering in chiral carbon nanotubes: Diameter and energy dependence of the $D$ mode
Authors:
Felix Herziger,
Asmus Vierck,
Jan Laudenbach,
Janina Maultzsch
Abstract:
We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT diameter and on the energy of the resonant optical transition. Our approach is based on the symmetry of the hexagonal lattice and geometric considerati…
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We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT diameter and on the energy of the resonant optical transition. Our approach is based on the symmetry of the hexagonal lattice and geometric considerations, hence the method is independent of the exact model that is chosen to describe the electronic band structure or the phonon dispersion. We finally clarify the diameter dependence of this Raman mode that was controversely discussed in the past and demonstrate that, depending on the experimental conditions, in general two different dependencies can be measured. We also prove that carbon nanotubes with arbitrary chiral index can exhibit a $D$ mode in their Raman spectrum, in contrast to previous symmetry-based arguments. Furthermore, we give a direct quantification of the curvature-induced phonon frequency corrections of the $D$-mode in carbon nanotubes with respect to graphite.
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Submitted 14 August, 2015;
originally announced August 2015.
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Beyond double-resonant Raman scattering: UV Raman spectroscopy on graphene, graphite and carbon nanotubes
Authors:
Christoph Tyborski,
Felix Herziger,
Roland Gillen,
Janina Maultzsch
Abstract:
We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($\approx 4.7\,\text{eV}$), we partially suppress double-resonant scattering processes and observe the two-phonon density of states of carbon nanomaterials. The measured peaks are assigned to contrib…
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We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($\approx 4.7\,\text{eV}$), we partially suppress double-resonant scattering processes and observe the two-phonon density of states of carbon nanomaterials. The measured peaks are assigned to contributions from LO, TO, and LA phonon branches, supported by calculations of the phonon dispersion. Moreover, we gain access to the infrared-active $E_{1u}$ mode in graphite. By lowering the excitation energy and thus allowing double-resonant scattering processes, we demonstrate the rise of the \textit{2D} mode in graphite with ultra-short phonon wave vectors.
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Submitted 31 July, 2015; v1 submitted 27 March, 2015;
originally announced March 2015.
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Double-resonant LA phonon scattering in defective graphene and carbon nanotubes
Authors:
Felix Herziger,
Christoph Tyborski,
Oliver Ochedowski,
Marika Schleberger,
Janina Maultzsch
Abstract:
We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) phonons with defects. We investigate its dependence on laser excitation energy, on the number of graphene layers and on the carbon nanotube diameter. W…
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We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) phonons with defects. We investigate its dependence on laser excitation energy, on the number of graphene layers and on the carbon nanotube diameter. We assign this Raman mode to so-called 'inner' processes with resonant phonons mainly from the $Γ-K$ high-symmetry direction. The asymmetry of the $D''$ mode is explained by additional contributions from phonons next to the $Γ-K$ line. Our results demonstrate the importance of inner contributions in the double-resonance scattering process and add a fast method to investigate acoustic phonons in graphene and carbon nanotubes by optical spectroscopy.
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Submitted 15 December, 2014;
originally announced December 2014.
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Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene
Authors:
Felix Herziger,
Matteo Calandra,
Paola Gava,
Patrick May,
Michele Lazzeri,
Francesco Mauri,
Janina Maultzsch
Abstract:
By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene. We show that, in contrast to previous works, the so-called inner processes are dominant and that the 2D-mode lineshape is described by three dominant…
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By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene. We show that, in contrast to previous works, the so-called inner processes are dominant and that the 2D-mode lineshape is described by three dominant resonances around the $K$ point. We show that the splitting of the TO phonon branch in $Γ-K$ direction, as large as 12 cm$^{-1}$ in $GW$ approximation, is of great importance for a thorough description of the 2D-mode lineshape. Finally, we present a method to extract the TO phonon splitting and the splitting of the electronic bands from experimental data.
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Submitted 6 October, 2014;
originally announced October 2014.
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Graphene Grown on Ge(001) from Atomic Source
Authors:
Gunther Lippert,
Jarek Dabrowski,
Thomas Schroeder,
Yuji Yamamoto,
Felix Herziger,
Janina Maultzsch,
Jens Baringhaus,
Christoph Tegenkamp,
Maria Carmen Asensio,
Jose Avila,
Grzegorz Lupina
Abstract:
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with s…
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Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.
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Submitted 19 December, 2013;
originally announced December 2013.
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Molecular beam growth of graphene on mica
Authors:
Gunther Lippert,
Jarek Dabrowski,
Yuji Yamamoto,
Felix Herziger,
Janina Maultzsch,
Max C. Lemme,
Wolfgang Mehr,
Grzegorz Lupina
Abstract:
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high cr…
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We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high crystalline quality with the defect density below the threshold detectable by Raman spectroscopy. The interaction between graphene and the mica substrate is studied by comparison of the Raman spectroscopy and atomic force microscopy data with the corresponding results obtained for graphene flakes mechanically exfoliated onto biotite substrates. Experimental insights are combined with density functional theory calculations to propose a model for the initial stage of the van der Waals growth of graphene on mica surfaces. This work provides important hints on how the direct growth of high quality graphene on insulators can be realized in general without exceeding the thermal budget limitations of Si technologies.
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Submitted 30 May, 2012;
originally announced May 2012.
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Layer number determination in graphene using out-of-plane vibrations
Authors:
Felix Herziger,
Patrick May,
Janina Maultzsch
Abstract:
We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process combining a LO and a ZO' phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments. The i…
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We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process combining a LO and a ZO' phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments. The investigation of the out-of-plane ZO' phonon for layer number determination is expected to be transferable to other layered materials like boron nitride.
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Submitted 21 June, 2012; v1 submitted 27 March, 2012;
originally announced March 2012.
