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Strain engineering of the electronic states of silicon-based quantum emitters
Authors:
A. Ristori,
N. Granchi,
F. Intonti,
M. Khoury,
D. Hannani,
C. M. Ruiz,
M. Salvalaglio,
A. Filippatos,
M. Amato,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Bollani,
C. Barri,
M. Abbarchi,
F. Biccari
Abstract:
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers)…
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Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.
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Submitted 12 June, 2023;
originally announced June 2023.
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Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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Submitted 7 January, 2020;
originally announced January 2020.
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Photoluminescence of lead-related optical centers in single-crystal diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
J. Forneris,
T. Herzig,
J. Küpper,
A. Damin,
S. Santonocito,
P. Traina,
E. Moreva,
F. Celegato,
S. Pezzagna,
I. P. Degiovanni,
M. Jakšić,
M. Genovese,
J. Meijer,
P. Olivero
Abstract:
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable…
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We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices.
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Submitted 5 June, 2018;
originally announced June 2018.
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Single-photon-emitting optical centers in diamond fabricated upon Sn implantation
Authors:
S. Ditalia Tchernij,
T. Herzig,
J. Forneris,
J. Küpper,
S. Pezzagna,
P. Traina,
E. Moreva,
I. P. Degiovanni,
G. Brida,
N. Skukan,
M. Genovese,
M. Jakšić,
J. Meijer,
P. Olivero
Abstract:
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi…
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The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view.
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Submitted 26 September, 2017; v1 submitted 4 August, 2017;
originally announced August 2017.
