Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction
Authors:
Andreas Brenneis,
Jan Overbeck,
Julian Treu,
Simon Hertenberger,
Stefanie Morkötter,
Markus Döblinger,
Jonathan J. Finley,
Gerhard Abstreiter,
Gregor Koblmüller,
Alexander W. Holleitner
Abstract:
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si…
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We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.
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Submitted 5 October, 2015;
originally announced October 2015.
Ultrafast photocurrents and THz generation in single InAs-nanowires
Authors:
Nadine Erhard,
Paul Seifert,
Leonhard Prechtel,
Simon Hertenberger,
Helmut Karl,
Gerhard Abstreiter,
Gregor Koblmuller,
Alexander W. Holleitner
Abstract:
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contr…
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To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources.
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Submitted 12 February, 2015;
originally announced February 2015.
