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Graphene on silicon nitride for optoelectromechanical micromembrane resonators
Authors:
Silvan Schmid,
Tolga Bagci,
Emil Zeuthen,
Jacob M. Taylor,
Patrick K. Herring,
Maja C. Cassidy,
Charles M. Marcus,
Luis Guillermo Villanueva,
Bartolo Amato,
Anja Boisen,
Yong Cheol Shin,
Jing Kong,
Anders S. Sørensen,
Koji Usami,
Eugene S. Polzik
Abstract:
Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical devices. However, capacitive coupling of such dielectric membranes is rather weak. Here we ad…
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Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical devices. However, capacitive coupling of such dielectric membranes is rather weak. Here we add a single layer of graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene coated membranes is found to be equal to a perfectly conductive membrane. Our results show that a single layer of graphene substantially enhances the electromechanical capacitive coupling without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of SiN micromembrane resonators.
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Submitted 17 July, 2013; v1 submitted 25 May, 2013;
originally announced May 2013.
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Observation of suppressed terahertz absorption in photoexcited graphene
Authors:
A. J. Frenzel,
C. H. Lui,
W. Fang,
N. L. Nair,
P. K. Herring,
P. Jarillo-Herrero,
J. Kong,
N. Gedik
Abstract:
When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectroscopy in conjunction with optical pump excitation, we observe a reduced absorption of THz radiation…
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When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectroscopy in conjunction with optical pump excitation, we observe a reduced absorption of THz radiation in photoexcited graphene. The measured spectral shape of the differential optical conductivity exhibits non-Drude behavior. We discuss several possible mechanisms that contribute to the observed low-frequency non-equilibrium optical response of graphene.
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Submitted 30 March, 2013; v1 submitted 25 January, 2013;
originally announced January 2013.
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Carbon nanotubes for coherent spintronic devices
Authors:
F. Kuemmeth,
H. O. H. Churchill,
P. K. Herring,
C. M. Marcus
Abstract:
Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual, electrically-gated carbon nanotubes, and present experimental efforts to understand their electron…
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Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual, electrically-gated carbon nanotubes, and present experimental efforts to understand their electronic and nuclear spin degrees of freedom, which in the future may enable quantum applications.
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Submitted 14 December, 2009;
originally announced December 2009.
