Skip to main content

Showing 1–10 of 10 results for author: Herranz, D

Searching in archive cond-mat. Search in all archives.
.
  1. arXiv:1506.00901  [pdf, other

    cond-mat.mes-hall

    Detection of spin torque magnetization dynamics through low frequency noise

    Authors: Juan Pedro Cascales, David Herranz, Ursula Ebels, Jordan Katine, Farkhad G. Aliev

    Abstract: We present a comparative study of high frequency dynamics and low frequency noise in elliptical magnetic tunnel junctions with lateral dimensions under 100 nm presenting current-switching phenomena. The analysis of the high frequency oscillation modes with respect to the current reveals the onset of a steady-state precession regime for negative bias currents above $J=10^7 A/cm^2$, when the magneti… ▽ More

    Submitted 2 June, 2015; originally announced June 2015.

  2. arXiv:1305.6209  [pdf

    cond-mat.mes-hall

    Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis

    Authors: J. P. Cascales, D. Herranz, J. L. Sambricio, U. Ebels, J. A. Katine, F. G. Aliev

    Abstract: We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the cr… ▽ More

    Submitted 27 May, 2013; originally announced May 2013.

    Journal ref: Appl. Phys. Lett. 102, 092404 (2013)

  3. arXiv:1209.4459  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Controlling shot noise in double-barrier magnetic tunnel junctions

    Authors: J. P. Cascales, D. Herranz, F. G. Aliev, T. Szczepanski, V. K. Dugaev, J. Barnas, A. Duluard, M. Hehn, C. Tiusan

    Abstract: We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V… ▽ More

    Submitted 20 September, 2012; originally announced September 2012.

    Comments: 8 pages, 4 figures

    Journal ref: Phys. Rev. Lett. 109, 066601 (2012)

  4. arXiv:1204.6034  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.other

    Very strong reduction of 1/f noise by Carbon doping in epitaxial Fe/MgO(100)12ML/Fe magnetic tunnel junctions with large density of barrier defects

    Authors: D. Herranz, R. Guerrero, J. P. Cascales, F. G. Aliev, M. Hehn, C. Tiusan

    Abstract: We report on the strong influence of Carbon doping on 1/f noise in fully epitaxial Fe/MgO(100)12ML/Fe magnetic tunnel junctions in comparison with undoped junctions with a large density of barrier defects. Carbon influences the relaxation of defects, the reconstruction of the interface and the symmetry transformation of interface resonance states, which are suggested to contribute to the strong re… ▽ More

    Submitted 26 April, 2012; originally announced April 2012.

    Comments: 8 pages, 3 figures

  5. Tunneling in double barrier junctions with 'hot spots'

    Authors: D. Herranz, F. G. Aliev, C. Tiusan, M. Hehn, V. K. Dugaev, J. Barnas

    Abstract: We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bia… ▽ More

    Submitted 26 April, 2012; originally announced April 2012.

    Comments: 11 pages, 4 figures

    Journal ref: Physical Review Letters 105, 047207 (2010)

  6. arXiv:1204.3744  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Low frequency noise due to magnetic inhomogeneities in submicron FeCoB/MgO/FeCoB magnetic tunnel junctions

    Authors: D. Herranz, A. Gomez-Ibarlucea, M. Schäfers, A. Lara, G. Reiss, F. G. Aliev

    Abstract: We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675μm2. In the smaller area junctions we found an unexpected random telegraph noise (RTN1), deeply in the parallel state, possibly due to stray field induced MI/DWs in the hard layer. The second no… ▽ More

    Submitted 17 April, 2012; originally announced April 2012.

    Comments: 12 pages, 4 figures

    Journal ref: Applied Physics Letters 2011

  7. arXiv:1007.3941  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions

    Authors: D. Herranz, F. Bonell, A. Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R. Villar1, C. Tiusan, F. G. Aliev

    Abstract: Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunnelling magnetoresistance (TMR). A comparative study of the room temperature electron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVx MTJs… ▽ More

    Submitted 22 July, 2010; originally announced July 2010.

    Comments: 12 pages, 3 figures

    Journal ref: D. Herranz, F. Bonell, A.Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R.Villar1, C.Tiusan , and F.G.Aliev Appl. Phys. Lett. 96, 202501 (2010)

  8. arXiv:0807.2519  [pdf, ps, other

    cond-mat.mtrl-sci

    Current-induced domain-wall motion in synthetic antiferromagnets

    Authors: D. Herranz, R. Guerrero, R. Villar, F. G. Aliev, A. C. Swaving, R. A. Duine, C. van Haesendonck, I. Vavra

    Abstract: Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10 multilayers a transition from excess to suppressed domain-wall induced 1/f noise above current densities of j_c ~ 2*10^5 A/cm^2 has been observed. In ferromagne… ▽ More

    Submitted 16 July, 2008; originally announced July 2008.

  9. arXiv:0803.3564  [pdf, ps, other

    cond-mat.mes-hall

    Very low 1/f noise at room temperature in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions

    Authors: F. G. Aliev, R. Guerrero, D. Herranz, R. Villar, F. Greullet, C. Tiusan, M. Hehn

    Abstract: We report on room temperature 1/f noise in fully epitaxial Fe(45nm)/MgO(2.6nm)/Fe(10nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe/MgO bottom interface. We have found that the normalized noise (Hooge factor) asymmetry between parallel and antiparallel states may strongly depend on the applied bias and its polarity. Both types of MTJs exhibit record low Hooge factor… ▽ More

    Submitted 25 March, 2008; originally announced March 2008.

    Comments: 9 pages, 3 figures

    Journal ref: Appl. Phys. Lett. 91, 232504 (2007)

  10. arXiv:0802.3647  [pdf, ps, other

    cond-mat.mes-hall

    High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

    Authors: R. Guerrero, D. Herranz, F. G. Aliev, F. Greullet, C. Tiusan, M. Hehn, F. Montaigne

    Abstract: Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons… ▽ More

    Submitted 25 February, 2008; originally announced February 2008.

    Journal ref: Appl. Phys. Lett. 91, 132504 (2007)