Optical properties and carrier dynamics in Co-doped ZnO nanorods
Authors:
Aswathi K. Sivan,
Alejandro Galan-Gonzalez,
Lorenzo Di Mario,
Nicolas Tappy,
Javier Hernandez-Ferrer,
Daniele Catone,
Stefano Turchini,
Ana M. Benito,
Wolfgang K. Maser,
Simon Escobar Steinvall,
Anna Fontcuberta i Morral,
Andrew Gallant,
Dagou A. Zeze,
Del Atkinson,
Faustino Martelli1
Abstract:
The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-t…
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The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.
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Submitted 30 June, 2020;
originally announced June 2020.
