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Magnetic Quantum Tunneling: Insights from Simple Molecule-Based Magnets
Authors:
Stephen Hill,
Saiti Datta,
Junjie Liu,
Ross Inglis,
Constantinos J. Milios,
Patrick L. Feng,
John J. Henderson,
Enrique del Barco,
Euan K. Brechin,
David N. Hendrickson
Abstract:
This article takes a broad view of the understanding of magnetic bistability and magnetic quantum tunneling in single-molecule magnets (SMMs), focusing on three families of relatively simple, low-nuclearity transition metal clusters: spin S = 4 Ni4, Mn(III)3 (S = 2 and 6) and Mn(III)6 (S = 4 and 12). The Mn(III) complexes are related by the fact that they contain triangular Mn3 units in which the…
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This article takes a broad view of the understanding of magnetic bistability and magnetic quantum tunneling in single-molecule magnets (SMMs), focusing on three families of relatively simple, low-nuclearity transition metal clusters: spin S = 4 Ni4, Mn(III)3 (S = 2 and 6) and Mn(III)6 (S = 4 and 12). The Mn(III) complexes are related by the fact that they contain triangular Mn3 units in which the exchange may be switched from antiferromagnetic to ferromagnetic without significantly altering the coordination around the Mn(III) centers, thereby leaving the single-ion physics more-or-less unaltered. This allows for a detailed and systematic study of the way in which the individual-ion anisotropies project onto the molecular spin ground state in otherwise identical low- and high-spin molecules, thus providing unique insights into the key factors that control the quantum dynamics of SMMs, namely: (i) the height of the kinetic barrier to magnetization relaxation; and (ii) the transverse interactions that cause tunneling through this barrier. Numerical calculations are supported by an unprecedented experimental data set (17 different compounds), including very detailed spectroscopic information obtained from high-frequency electron paramagnetic resonance and low-temperature hysteresis measurements. Diagonalization of the multi-spin Hamiltonian matrix is necessary in order to fully capture the interplay between exchange and local anisotropy, and the resultant spin-state mixing which ultimately gives rise to the tunneling matrix elements in the high symmetry SMMs (ferromagnetic Mn3 and Ni4). The simplicity (low-nuclearity, high-symmetry, weak disorder, etc..) of the molecules highlighted in this study proves to be of crucial importance.
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Submitted 7 July, 2010;
originally announced July 2010.
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Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single Molecule Magnet
Authors:
J. J. Henderson,
C. Koo,
P. L. Feng,
E. del Barco,
S. Hill,
I. S. Tupitsyn,
P. C. E. Stamp,
D. N. Hendrickson
Abstract:
We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3…
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We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances forbidden by the molecular symmetry are explained by correctly orienting the Jahn-Teller axes of the individual manganese ions, and by including transverse dipolar fields. These factors are likely to be important for QTM in all SMMs.
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Submitted 3 June, 2009;
originally announced June 2009.
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High-Frequency Microstrip Cross Resonators for Circular Polarization EPR Spectroscopy
Authors:
J. J. Henderson,
C. M. Ramsey,
H. M. Quddusi,
E. del Barco
Abstract:
In this article we discuss the design and implementation of a novel microstrip resonator which allows for the absolute control of the microwaves polarization degree for frequencies up to 30 GHz. The sensor is composed of two half-wavelength microstrip line resonators, designed to match the 50 Ohms impedance of the lines on a high dielectric constant GaAs substrate. The line resonators cross each…
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In this article we discuss the design and implementation of a novel microstrip resonator which allows for the absolute control of the microwaves polarization degree for frequencies up to 30 GHz. The sensor is composed of two half-wavelength microstrip line resonators, designed to match the 50 Ohms impedance of the lines on a high dielectric constant GaAs substrate. The line resonators cross each other perpendicularly through their centers, forming a cross. Microstrip feed lines are coupled through small gaps to three arms of the cross to connect the resonator to the excitation ports. The control of the relative magnitude and phase between the two microwave stimuli at the input ports of each line allows for tuning the degree and type of polarization of the microwave excitation at the center of the cross resonator. The third (output) port is used to measure the transmitted signal, which is crucial to work at low temperatures, where reflections along lengthy coaxial lines mask the signal reflected by the resonator. EPR spectra recorded at low temperature in an S= 5/2 molecular magnet system show that 82%-fidelity circular polarization of the microwaves is achieved over the central area of the resonator.
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Submitted 11 August, 2008;
originally announced August 2008.
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Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nano-electrodes
Authors:
J. J. Gonzalez-Pons,
J. J. Henderson,
E. del Barco,
B. Ozyilmaz
Abstract:
We present a study of electron-beam evaporated Pd0.4Ni0.6 alloy thin films by means of ferromagnetic resonance measurements on extended films of varying thickness and anisotropic magnetoresistance measurements of lithographically patterned high aspect-ratio ferromagnetic electrodes, respectively. The results reveal that the direction of the magnetization strongly depends on the electrode lateral…
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We present a study of electron-beam evaporated Pd0.4Ni0.6 alloy thin films by means of ferromagnetic resonance measurements on extended films of varying thickness and anisotropic magnetoresistance measurements of lithographically patterned high aspect-ratio ferromagnetic electrodes, respectively. The results reveal that the direction of the magnetization strongly depends on the electrode lateral dimensions, transitioning from in-plane magnetization for extended films to out-of-the-plane magnetization for electrode widths below 2-3 microns, reaching 58 degrees off-plane for 100 nm-wide nanoelectrodes.
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Submitted 10 June, 2008;
originally announced June 2008.
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On-chip Integration of High-Frequency Electron Paramagnetic Resonance Spectroscopy and Hall-Effect Magnetometry
Authors:
H. M. Quddusi,
C. M. Ramsey,
J. C. Gonzalez-Pons,
J. J. Henderson,
E. del Barco,
G. de Loubens,
A. D. Kent
Abstract:
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated from a two dimensional electron gas GaAs/AlGaAs heterostructure in the form of a cross, with a 50x50 um2 sensing area. A high-frequency microstrip resonator is…
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A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated from a two dimensional electron gas GaAs/AlGaAs heterostructure in the form of a cross, with a 50x50 um2 sensing area. A high-frequency microstrip resonator is coupled with two small gaps to a transmission line with a 50 Ohms impedance. Different resonator lengths are used to obtain quasi-TEM fundamental resonant modes in the frequency range 10-30 GHz. The resonator is positioned on top of the active area of the Hall-effect magnetometer, where the magnetic field of the fundamental mode is largest, thus optimizing the conversion of microwave power into magnetic field at the sample position. The two gaps coupling the resonator and transmission lines are engineered differently. The gap to the microwave source is designed to optimize the loaded quality factor of the resonator (Q = 150) while the gap for the transmitted signal is larger. This latter gap minimizes losses and prevents distortion of the resonance while enabling measurement of the transmitted signal. The large filling factor of the resonator permits sensitivities comparable to that of high-quality factor resonant cavities. The integrated sensor enables measurement of the magnetization response of micron scale samples upon application of microwave fields. In particular, the combined measurement of the magnetization change and the microwave power under cw microwave irradiation of single crystal of molecular magnets is used to determine of the energy relaxation time of the molecular spin states. In addition, real time measurements of the magnetization dynamics upon application of fast microwave pulses are demonstrated
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Submitted 5 May, 2008;
originally announced May 2008.
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Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets
Authors:
J. J. Henderson,
C. M. Ramsey,
E. del Barco,
A. Mishra,
G. Christou
Abstract:
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductan…
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Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn12(3-thiophenecarboxylate) displays the coulomb blockade effect with several excitations within +/- 40 meV.
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Submitted 1 March, 2007;
originally announced March 2007.
