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Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond
Authors:
Luiz G. Pimenta Martins,
Diego L. Silva,
Jesse S. Smith,
Ang-Yu Lu,
Cong Su,
Marek Hempel,
Connor Occhialini,
Xiang Ji,
Ricardo Pablo,
Rafael S. Alencar,
Alan C. R. Souza,
Alan B. de Oliveira,
Ronaldo J. C. Batista,
Tomás Palacios,
Matheus J. S. Matos,
Mário S. C. Mazzoni,
Riccardo Comin,
Jing Kong,
Luiz G. Cançado
Abstract:
We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrat…
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We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. Our combined theoretical and experimental results indicate a gradual top-bottom diamondization mechanism, consistent with the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on graphene indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene.
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Submitted 16 October, 2019; v1 submitted 3 October, 2019;
originally announced October 2019.
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Self-aligned local electrolyte gating of 2D materials with nanoscale resolution
Authors:
Cheng Peng,
Dmitri K. Efetov,
Sebastien Nanot,
Ren-Jye Shiue,
Gabriele Grosso,
Yafang Yang,
Marek Hempel,
Pablo Jarillo-Herrero,
Jing Kong,
Frank H. L. Koppens,
Dirk Englund
Abstract:
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits t…
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In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits the gating strength, boundary sharpness, and pitch size of periodic structures, and restricts possible geometries of local gates (due to wire packaging), precluding certain device concepts, such as plasmonics and transformation optics based on metamaterials. Here we present a new gating concept based on a dielectric-free self-aligned electrolyte technique that allows spatially modulating charges with nanometer resolution. We employ a combination of a solid-polymer electrolyte gate and an ion-impenetrable e-beam-defined resist mask to locally create excess charges on top of the gated surface. Electrostatic simulations indicate high carrier density variations of $Δn =10^{14}\text{cm}^{-2}$ across a length of 10 nm at the mask boundaries on the surface of a 2D conductor, resulting in a sharp depletion region and a strong in-plane electric field of $6\times10^8 \text{Vm}^{-1}$ across the so-created junction. We apply this technique to the 2D material graphene to demonstrate the creation of tunable p-n junctions for optoelectronic applications. We also demonstrate the spatial versatility and self-aligned properties of this technique by introducing a novel graphene thermopile photodetector.
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Submitted 27 October, 2016; v1 submitted 24 October, 2016;
originally announced October 2016.
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Specific heat of K071Na0.29Fe2As2 at very low temperatures
Authors:
A. Reifenberger,
M. Hempel,
P. Vogt,
S. Aswartham,
M. Abdel-Hafiez,
V. Grinenko,
S. Wurmehl,
S. -L. Drechsler,
A. Fleischmann,
C. Enss,
R. Klingeler
Abstract:
A commercially available calorimeter has been used to investigate the specific heat of a high-quality \kn\ single crystal. The addenda heat capacity of the calorimeter is determined in the temperature range $0.02 \, \mathrm{K} \leq T \leq 0.54 \, \mathrm{K}$. The data of the \kn\ crystal imply the presence of a large $T^2$ contribution to the specific heat which gives evidence of $d$-wave order pa…
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A commercially available calorimeter has been used to investigate the specific heat of a high-quality \kn\ single crystal. The addenda heat capacity of the calorimeter is determined in the temperature range $0.02 \, \mathrm{K} \leq T \leq 0.54 \, \mathrm{K}$. The data of the \kn\ crystal imply the presence of a large $T^2$ contribution to the specific heat which gives evidence of $d$-wave order parameter symmetry in the superconducting state. To improve the measurements, a novel design for a calorimeter with a paramagnetic temperature sensor is presented. It promises a temperature resolution of $ΔT \approx 0.1 \, \mathrm{μK}$ and an addenda heat capacity less than $200 \, \mathrm{pJ/K}$ at $ T < 100 \, \mathrm{mK}$.
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Submitted 11 May, 2014;
originally announced May 2014.
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Evidence of d-wave Superconductivity in K_(1-x)Na_xFe_2As_2 (x = 0, 0.1) Single Crystals from Low-Temperature Specific Heat Measurements
Authors:
M. Abdel-Hafiez,
V. Grinenko,
S. Aswartham,
I. Morozov,
M. Roslova,
O. Vakaliuk,
S. Johnston,
D. V. Efremov,
J. van den Brink,
H. Rosner,
M. Kumar,
C. Hess,
S. Wurmehl,
A. U. B. Wolter,
B. Buechner,
E. L. Green,
J. Wosnitza,
P. Vogt,
A. Reifenberger,
C. Enss,
R. Klingeler,
M. Hempel,
S. -L. Drechsler
Abstract:
From the measurement and analysis of the specific heat of high-quality K_(1-x)Na_xFe_2As_2 single crystals we establish the presence of large T^2 contributions with coefficients alpha_sc ~ 30 mJ/mol K^3 at low-T for both x=0 and 0.1. Together with the observed square root field behavior of the specific heat in the superconducting state both findings evidence d-wave superconductivity on almost all…
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From the measurement and analysis of the specific heat of high-quality K_(1-x)Na_xFe_2As_2 single crystals we establish the presence of large T^2 contributions with coefficients alpha_sc ~ 30 mJ/mol K^3 at low-T for both x=0 and 0.1. Together with the observed square root field behavior of the specific heat in the superconducting state both findings evidence d-wave superconductivity on almost all Fermi surface sheets with an average gap amplitude of Delta_0 in the range of 0.4 - 0.8 meV. The derived Delta_0 and the observed T_c agree well with the values calculated within the Eliashberg theory, adopting a spin-fluctuation mediated pairing in the intermediate coupling regime.
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Submitted 25 April, 2013; v1 submitted 22 January, 2013;
originally announced January 2013.
