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Defect Accumulation in beta-Ga2O3 Implanted with Yb
Authors:
Mahwish Sarwar,
Renata Ratajczak,
Cyprian Mieszczynski,
Sylwia Gierałtowska,
René Heller,
Stefan Eisenwinder,
Wojciech Woźniak,
Elżbieta Guziewicz
Abstract:
Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in beta-Ga2O3 implanted with Rare Earth (RE) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. (-201) oriented beta-Ga2O3 single crystals were i…
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Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in beta-Ga2O3 implanted with Rare Earth (RE) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. (-201) oriented beta-Ga2O3 single crystals were implanted with Yb ions fluences ranging from 1 x 1012 to 5 x 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. The resulting accumulation curve reveals a two-step damage process. In the first stage, the damage of the beta-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 x 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 x 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3.
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Submitted 24 March, 2025;
originally announced March 2025.
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Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
Authors:
Oliver Steuer,
Daniel Schwarz,
Michael Oehme,
Florian Bärwolf,
Yu Cheng,
Fabian Ganss,
René Hübner,
René Heller,
Shengqiang Zhou,
Manfred Helm,
Gianaurelio Cuniberti,
Yordan M. Georgiev,
Slawomir Prucnal
Abstract:
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud…
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Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3.
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Submitted 13 June, 2024;
originally announced June 2024.
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Evaluation of transition rates from nonequilibrium instantons
Authors:
Eric R. Heller,
David T. Limmer
Abstract:
Equilibrium rate theories play a crucial role in understanding rare, reactive events. However, they are inapplicable to a range of irreversible processes in systems driven far from thermodynamic equilibrium like active and biological matter. Here, we develop an efficient numerical method to compute the rate constant of rare nonequilibrium events in the weak-noise limit based on an instanton approx…
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Equilibrium rate theories play a crucial role in understanding rare, reactive events. However, they are inapplicable to a range of irreversible processes in systems driven far from thermodynamic equilibrium like active and biological matter. Here, we develop an efficient numerical method to compute the rate constant of rare nonequilibrium events in the weak-noise limit based on an instanton approximation to the stochastic path integral and illustrate its wide range of application. We demonstrate excellent agreement of the instanton rates with numerically exact results for a particle under a non-conservative force. We also study phase transitions in an active field theory. We elucidate how activity alters the stability of the two phases and their rates of interconversion in a manner that can be well described by modifying classical nucleation theory,
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Submitted 30 October, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Evolution of the surface atomic structure of multielement oxide films: curse or blessing?
Authors:
Giada Franceschi,
Renè Heller,
Michael Schmid,
Ulrike Diebold,
Michele Riva
Abstract:
Atomically resolved scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) are used to gain atomic-scale insights into the heteroepitaxy of lanthanum-strontium manganite (LSMO, La$_{1-x}$Sr$_x$MnO$_{3-δ}$, $x$ $\approx$ 0.2) on SrTiO$_3$(110). LSMO is a perovskite oxide characterized by several composition-dependent surface reconstructions. The flexibility of the surface al…
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Atomically resolved scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) are used to gain atomic-scale insights into the heteroepitaxy of lanthanum-strontium manganite (LSMO, La$_{1-x}$Sr$_x$MnO$_{3-δ}$, $x$ $\approx$ 0.2) on SrTiO$_3$(110). LSMO is a perovskite oxide characterized by several composition-dependent surface reconstructions. The flexibility of the surface allows it to incorporate nonstoichiometries during growth, which result in composition-dependent surface atomic structures. This happens up to a critical point, where phase separation occurs, clusters rich in the excess cations form at the surface, and films show a rough morphology. To limit the nonstoichiometry introduced by non-optimal growth conditions, it proves useful to monitor the changes in surface atomic structures as a function of the PLD parameters and tune the latter accordingly.
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Submitted 27 November, 2023;
originally announced November 2023.
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p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Authors:
Chi Xu,
Chenhui Zhang,
Mao Wang,
Yufang Xie,
René Hübner,
René Heller,
Ye Yuan,
Manfred Helm,
Xixiang Zhang,
Shengqiang Zhou
Abstract:
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The sa…
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In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy.
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Submitted 26 August, 2019;
originally announced August 2019.
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Breaking the doping limit in silicon by deep impurities
Authors:
Mao Wang,
A. Debernardi,
Y. Berencén,
R. Heller,
Chi Xu,
Ye Yuan,
Yufang Xie,
R. Böttger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Prucnal,
Shengqiang Zhou
Abstract:
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interst…
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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
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Submitted 1 November, 2018; v1 submitted 17 September, 2018;
originally announced September 2018.
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Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature
Authors:
Mao Wang,
Y. Berencén,
E. García-Hemme,
S. Prucnal,
R. Hübner,
Ye Yuan,
Chi Xu,
L. Rebohle,
R. Böttger,
R. Heller,
H. Schneider,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed…
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Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.
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Submitted 4 September, 2018;
originally announced September 2018.
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Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing
Authors:
F. Liu,
S. Prucnal,
Y. Berencén,
Z. Zhang,
Y. Yuan,
Y. Liu,
R. Heller,
R. Boettger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se conce…
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We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se concentrations below the Mott limit, quantitative analysis of the temperature dependence of conductivity indicates a variable-range hopping mechanism with an exponent of s = 1/2 rather than 1/4, which implies a Coulomb gap at the Fermi level. The observed insulator-to-metal transition is attributed to the formation of an intermediate band in the Se-hyperdoped Si layers.
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Submitted 28 July, 2017;
originally announced July 2017.
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An open-source platform to study uniaxial stress effects on nanoscale devices
Authors:
G. Signorello,
M. Schraff,
P. Zellekens,
U. Drechsler,
M. Buerge,
H. R. Steinauer,
R. Heller,
M. Tschudy,
H. Riel
Abstract:
We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the plat…
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We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.
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Submitted 5 April, 2017;
originally announced April 2017.
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Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
Authors:
Shengqiang Zhou,
Lin Li,
Ye Yuan,
A. W. Rushforth,
Lin Chen,
Yutian Wang,
R. Böttger,
R. Heller,
Jianhua Zhao,
K. W. Edmonds,
R. P. Campion,
B. L. Gallagher,
C. Timm,
M. Helm
Abstract:
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by car…
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For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.
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Submitted 15 August, 2016; v1 submitted 22 February, 2016;
originally announced February 2016.
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Charge Exchange and Energy Loss of Slow Highly Charged Ions in 1nm Thick Carbon Nanomembranes
Authors:
Richard A. Wilhelm,
Elisabeth Gruber,
Robert Ritter,
René Heller,
Stefan Facsko,
Friedrich Aumayr
Abstract:
Experimental charge exchange and energy loss data for the transmission of slow highly charged Xe ions through ultra-thin polymeric carbon membranes are presented. Surprisingly, two distinct exit charge state distributions accompanied by charge exchange dependent energy losses are observed. The energy loss for ions exhibiting large charge loss shows a quadratic dependency on the incident charge sta…
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Experimental charge exchange and energy loss data for the transmission of slow highly charged Xe ions through ultra-thin polymeric carbon membranes are presented. Surprisingly, two distinct exit charge state distributions accompanied by charge exchange dependent energy losses are observed. The energy loss for ions exhibiting large charge loss shows a quadratic dependency on the incident charge state indicating that equilibrium stopping force values do not apply in this case. Additional angle resolved transmission measurements point on a significant contribution of elastic energy loss. The observations show that regimes of different impact parameters can be separated and thus a particle's energy deposition in an ultra-thin solid target may not be described in terms of an averaged energy loss per unit length.
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Submitted 24 March, 2014; v1 submitted 18 November, 2013;
originally announced November 2013.
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Phase diagram for nanostructuring CaF$_2$ surfaces by slow highly charged ions
Authors:
A. S. El-Said,
R. A. Wilhelm,
R. Heller,
S. Facsko,
C. Lemell,
G. Wachter,
J. Burgdörfer,
R. Ritter,
F. Aumayr
Abstract:
Impacts of individual slow highly charged ions on alkaline earth halide and alkali halide surfaces create nano-scale surface modifications. For different materials and impact energies a wide variety of topographic alterations have been observed, ranging from regularly shaped pits to nano-hillocks. We present experimental evidence for a second threshold for defect creation supported by simulations…
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Impacts of individual slow highly charged ions on alkaline earth halide and alkali halide surfaces create nano-scale surface modifications. For different materials and impact energies a wide variety of topographic alterations have been observed, ranging from regularly shaped pits to nano-hillocks. We present experimental evidence for a second threshold for defect creation supported by simulations involving the initial electronic heating and subsequent molecular dynamics. From our findings a unifying phase diagram underlying these diverse observations can be derived. By chemically etching of CaF$_2$ samples after irradiation with slow highly charged ions both above and below the potential energy threshold for hillock formation another threshold exists above which triangular pits are observed after etching. This threshold depends on both the potential and kinetic energies of the incident ion. Simulations indicate that this second threshold is associated with the formation of defect aggregates in the topmost layers of CaF$_2$.
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Submitted 23 February, 2012;
originally announced February 2012.
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Influenced of Fe buffer thickness on the crystalline quality and the transport properties of Fe/Ba(Fe1-xCox)2As2 bilayers
Authors:
K. Iida,
S. Haindl,
T. Thersleff,
J. Haenishc,
F. Kurth,
M. Kidszun,
R. Huehne,
I. Moench,
L. Schultz,
B. Holzapfel,
R. Heller
Abstract:
The implementation of an Fe buffer layer is a promising way to obtain epitaxial growth of Co-doped BaFe2As2 (Ba-122). However, the crystalline quality and the superconducting properties of Co-doped Ba-122 are influenced by the Fe buffer layer thickness, dFe. The well-textured growth of the Fe/Ba-122 bilayer with dFe = 15 nm results in a high Jc of 0.45 MAcm$^{-2}$ at 12 K in self-field, whereas a…
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The implementation of an Fe buffer layer is a promising way to obtain epitaxial growth of Co-doped BaFe2As2 (Ba-122). However, the crystalline quality and the superconducting properties of Co-doped Ba-122 are influenced by the Fe buffer layer thickness, dFe. The well-textured growth of the Fe/Ba-122 bilayer with dFe = 15 nm results in a high Jc of 0.45 MAcm$^{-2}$ at 12 K in self-field, whereas a low Jc value of 61000 Acm$^{-2}$ is recorded for the bilayer with dFe = 4 nm at the corresponding reduced temperature due to the presence of grain boundaries.
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Submitted 29 October, 2010;
originally announced November 2010.
