Interparticle heterostructures by spontaneous formation of Dirac nodal arc semimetal PtSn4 domains in nanoparticles produced by Supersonic Cluster Beam Deposition
Authors:
Marc Heggen,
José Enrique Martinez Medina,
Emanuele Barborini
Abstract:
In this study, we report on the spontaneous formation of highly ordered 2D layered domains of intermetallic phase PtSn4 in Sn nanoparticles of dimensions of the order of 10 nm during the gas aggregation process occurring in Supersonic Cluster Beam Deposition. Phase identification is based on High Resolution Transmission Electron Microscopy and on X-ray emission analysis coupled with Scanning Trans…
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In this study, we report on the spontaneous formation of highly ordered 2D layered domains of intermetallic phase PtSn4 in Sn nanoparticles of dimensions of the order of 10 nm during the gas aggregation process occurring in Supersonic Cluster Beam Deposition. Phase identification is based on High Resolution Transmission Electron Microscopy and on X-ray emission analysis coupled with Scanning Transmission Electron Microscopy. We propose that PtSn4-ordered domains precipitate inside Sn nanoparticles once the temperature drops below 520°C upon collisional cooling with room temperature Argon, while the nanoparticles persist longer in a liquid state. Sn matrix eventually solidifies upon the sudden temperature drop due to the supersonic expansion. 2D-layered PtSn4 domains create interparticle heterostructures that disrupt the spherical symmetry typical of gas aggregation processes and separate the Sn particle into distinct parts. The Dirac nodal arc semimetal character of PtSn4 makes it particularly interesting for studying the transport mechanisms in nanogranular films obtained by the soft-assembling of such nanoparticles, which feature a network of heterostructures showing sequences of alternate PtSn4 2D domains and metallic \b{eta}-Sn necks.
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Submitted 6 May, 2025;
originally announced May 2025.
Atomically resolved phase coexistence in VO2 thin films
Authors:
Masoud Ahmadi,
Atul Atul,
Sytze de Graaf,
Ewout van der Veer,
Ansgar Meise,
Amir Hossein Tavabi,
Marc Heggen,
Rafal E. Dunin-Borkowski,
Majid Ahmadi,
Bart J. Kooi
Abstract:
Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the ox…
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Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the oxygen atomic columns are resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of the strain-stabilized intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) utilizing atomic-resolution electron microscopy. Our approach sets a direct pathway to unravel the structural transitions in wide range of correlated oxides, offering substantial implications for e.g. optoelectronics and ferroelectrics.
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Submitted 30 September, 2023;
originally announced October 2023.
