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Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Authors:
Wei Pan,
D. Bruce Burckel,
Catalin D. Spataru,
Keshab R. Sapkota,
Aaron J. Muhowski,
Samuel D. Hawkins,
John F. Klem,
Layla S. Smith,
Doyle A. Temple,
Zachery A. Enderson,
Zhigang Jiang,
Komalavalli Thirunavukkuarasu,
Li Xiang,
Mykhaylo Ozerov,
Dmitry Smirnov,
Chang Niu,
Peide D. Ye,
Praveen Pai,
Fan Zhang
Abstract:
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproduc…
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Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.
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Submitted 6 June, 2025;
originally announced June 2025.
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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Authors:
W. Pan,
K. R. Sapkota,
P. Lu,
A. J. Muhowski,
W. M. Martinez,
C. L. H. Sovinec,
R. Reyna,
J. P. Mendez,
D. Mamaluy,
S. D. Hawkins,
J. F. Klem,
L. S. L. Smith,
D. A. Temple,
Z. Enderson,
Z. Jiang,
E. Rossi
Abstract:
In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/…
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In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $μ\sim 1.0 \times 10^6$ cm$^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
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Submitted 17 April, 2025; v1 submitted 8 October, 2024;
originally announced October 2024.
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Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
Authors:
W. Pan,
A. J. Muhowski,
W. M. Martinez,
C. L. H. Sovinec,
J. P. Mendez,
D. Mamaluy,
W. Yu,
X. Shi,
K. Sapkota,
S. D. Hawkins,
J. F. Klem
Abstract:
Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $α_{R}$ must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, $α_{R}$ is much…
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Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $α_{R}$ must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, $α_{R}$ is much smaller than 1. In this Letter, we propose a new device structure of quantum enhanced JJFETs in a zero-energy-gap InAs/GaSb heterostructure. We demonstrate that, due to an excitonic insulator quantum phase transition in this zero-gap heterostructure, the superconducting critical current displays a sharp transition as a function of gate bias, and the deduced gain factor $α_{R}$ ~ 0.06 is more than 50 times that (~ 0.001) reported in a classical JJFET. Further optimization may allow achieving a gain factor larger than 1 for logic applications.
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Submitted 27 September, 2024;
originally announced September 2024.
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Buried Dirac points in Quantum Spin Hall Insulators: Implications for edge transport and Majorana Kramer Pairs
Authors:
Joseph J. Cuozzo,
Wenlong Yu,
Xiaoyan Shi,
Aaron J. Muhowski,
Samuel D. Hawkins,
John F. Klem,
Enrico Rossi,
Wei Pan
Abstract:
For heterostructures formed by a quantum spin Hall insulator (QSHI) placed in proximity to a superconductor (SC), no external magnetic field is necessary to drive the system into a phase supporting topological superconductivity with Majorana zero energy states, making them very attractive for the realization of non-Abelian states and fault-tolerant qubits. Despite considerable work investigating Q…
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For heterostructures formed by a quantum spin Hall insulator (QSHI) placed in proximity to a superconductor (SC), no external magnetic field is necessary to drive the system into a phase supporting topological superconductivity with Majorana zero energy states, making them very attractive for the realization of non-Abelian states and fault-tolerant qubits. Despite considerable work investigating QSHI edge states, there is still an open question about their resilience to large magnetic fields and the implication of such resilience for the formation of a quasi-1D topological superconducting state. In this work, we investigate the transport properties of helical edge states in a QSHI-SC junction formed by a InAs/GaSb (15nm/5nm) double quantum well and a superconducting tantalum (Ta) constriction. We observe a robust conductance plateau up to 2 T, signaling resilient edge state transport. Such resilience is consistent with the Dirac point for the edge states being buried in the bulk valence band. Using a modified Landauer-Buttiker analysis, we find that the conductance is consistent with 98% Andreev reflection probability owing to the high transparency of the InAs/GaSb-Ta interface. We further theoretically show that a buried Dirac point does not affect the robustness of the quasi-1D topological superconducting phase, and favors the hybridization of Majorana Kramer pairs and fermionic modes in the QSHI resulting in extended MKP states, highlighting the subtle role of buried Dirac points in probing MKPs.
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Submitted 1 October, 2024; v1 submitted 27 September, 2024;
originally announced September 2024.
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Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Authors:
Henan Liu,
Yong Zhang,
Elizabeth H. Steenbergen,
Shi Liu,
Zhiyuan Lin,
Yong-Hang Zhang,
Jeomoh Kim,
Mi-Hee Ji,
Theeradetch Detchprohm,
Russell D. Dupuis,
Jin K. Kim,
Samuel D. Hawkins,
John F. Klem
Abstract:
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
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Submitted 16 April, 2017;
originally announced April 2017.
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Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
Authors:
W. Yu,
V. Clericò,
C. Hernández Fuentevilla,
X. Shi,
Y. Jiang,
D. Saha,
W. K. Lou,
K. Chang,
D. H. Huang,
G. Gumbs,
D. Smirnov,
C. J. Stanton,
Z. Jiang,
V. Bellani,
Y. Meziani,
E. Diez,
W. Pan,
S. D. Hawkins,
J. F. Klem
Abstract:
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol…
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Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state.
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Submitted 25 January, 2017;
originally announced January 2017.
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A facility for the analysis of the electronic structures of solids and their surfaces by synchrotron radiation photoelectron spectroscopy
Authors:
M. Hoesch,
T. K. Kim,
P. Dudin,
H. Wang,
S. Scott,
P. Harris,
S. Patel,
M. Matthews,
D. Hawkins,
S. G. Alcock,
T. Richter,
J. J. Mudd,
M. Basham,
L. Pratt,
P. Leicester,
E. C. Longhi,
A. Tamai,
F. Baumberger
Abstract:
A synchrotron radiation beamline in the photon energy range of 18 - 240 eV and an electron spectroscopy end station have been constructed at the 3 GeV Diamond Light Source storage ring. The instrument features a variable polarisation undulator, a high resolution monochromator, a re-focussing system to form a beam spot of 50x50 micrometer^2 and an end station for angle-resolved photoelectron spectr…
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A synchrotron radiation beamline in the photon energy range of 18 - 240 eV and an electron spectroscopy end station have been constructed at the 3 GeV Diamond Light Source storage ring. The instrument features a variable polarisation undulator, a high resolution monochromator, a re-focussing system to form a beam spot of 50x50 micrometer^2 and an end station for angle-resolved photoelectron spectroscopy (ARPES) including a 6-degrees-of-freedom cryogenic sample manipulator. The beamline design and its performance allow for a highly productive and precise use of the ARPES technique at an energy resolution of 10 - 15 meV for fast k-space mapping studies with a photon flux up to 2 10^13 ph/sec and well below 3 meV for high resolution spectra.
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Submitted 21 December, 2016;
originally announced December 2016.
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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
Authors:
Y. Jiang,
S. Thapa,
G. D. Sanders,
C. J. Stanton,
Q. Zhang,
J. Kono,
W. K. Lou,
K. Chang,
S. D. Hawkins,
J. F. Klem,
W. Pan,
D. Smirnov,
Z. Jiang
Abstract:
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inve…
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We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime.
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Submitted 18 October, 2016;
originally announced October 2016.
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Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure
Authors:
G. C. Dyer,
X. Shi,
B. V. Olson,
S. D. Hawkins,
J. F. Klem,
E. A. Shaner,
W. Pan
Abstract:
Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at obl…
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Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.
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Submitted 9 May, 2016;
originally announced May 2016.
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Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction
Authors:
Xiaoyan Shi,
Wenlong Yu,
Zhigang Jiang,
B. Andrei Bernevig,
W. Pan,
S. D. Hawkins,
J. F. Klem
Abstract:
Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here…
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Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.
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Submitted 20 November, 2014; v1 submitted 27 October, 2014;
originally announced October 2014.
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Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes
Authors:
Wenlong Yu,
Yuxuan Jiang,
Chao Huan,
Xunchi Chen,
Zhigang Jiang,
Samuel D. Hawkins,
John F. Klem,
Wei Pan
Abstract:
We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface a broad conductance peak is observed at zero bias. When a transparent InAs-Ta…
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We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface a broad conductance peak is observed at zero bias. When a transparent InAs-Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs-Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory.
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Submitted 28 February, 2014;
originally announced February 2014.
