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Microwave-regime demonstration of plasmonic non-reciprocity in a flowing two-dimensional electron gas
Authors:
Jingyee Chee,
Han Sae Jung,
Shannon Harvey,
Kenneth West,
Loren Pfeiffer,
Amir Yacoby,
Donhee Ham
Abstract:
The speed of a plasmonic wave in the presence of electron drift in a conductor depends on the wave's propagation direction, with the wave traveling along the drift (`forward wave') faster than the wave traveling against the drift (`backward wave'). Phenomena related to this plasmonic non-reciprocity -- which is relatively more pronounced in two-dimensional conductors than in bulk conductors and co…
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The speed of a plasmonic wave in the presence of electron drift in a conductor depends on the wave's propagation direction, with the wave traveling along the drift (`forward wave') faster than the wave traveling against the drift (`backward wave'). Phenomena related to this plasmonic non-reciprocity -- which is relatively more pronounced in two-dimensional conductors than in bulk conductors and could lead to solid-state device applications -- have been studied in THz and optical spectral regimes. Here we demonstrate the plasmonic non-reciprocity at microwave frequencies (10 $\sim$ 50 GHz). Concretely, we conduct, at 4K, a microwave network analysis on a gated GaAs two-dimensional electron gas with electron drift (i.e., DC current), directly measuring out forward and backward wave speeds via their propagation phase delays. We resolve, for example, forward and backward wave speeds of $4.26 \times 10^{-3} \pm 8.97 \times 10^{-6}$ (normalized to the speed of light). Sufficient consistency between the electron drift speed obtained from the microwave measurement and that alternatively estimated by a DC transport theory further confirms the non-reciprocity. We conclude this paper with a discussion on how to enhance the non-reciprocity for real-world applications, where degeneracy pressure would play an important role.
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Submitted 9 February, 2025;
originally announced February 2025.
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Millimeter-scale freestanding superconducting infinite-layer nickelate membranes
Authors:
Yonghun Lee,
Xin Wei,
Yijun Yu,
Lopa Bhatt,
Kyuho Lee,
Berit H. Goodge,
Shannon P. Harvey,
Bai Yang Wang,
David A. Muller,
Lena F. Kourkoutis,
Wei-Sheng Lee,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-doping was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process…
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Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-doping was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process to combine these steps with a heterostructure which includes an epitaxial soluble buffer layer, enabling the release of freestanding membranes of (Nd,Sr)NiO2 encapsulated in SrTiO3, which serves as a protective layer. The membranes have comparable structural and electronic properties to that of optimized thin films, and range in lateral dimensions from millimeters to ~100 micron fragments, depending on the degree of strain released with respect to the initial substrate. The changes in the superconducting transition temperature associated with membrane release are quite similar to those reported for substrate and pressure variations, suggestive of a common underlying mechanism. These membranes structures should provide a versatile platform for a range of experimental studies and devices free from substrate constraints.
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Submitted 7 February, 2024;
originally announced February 2024.
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Low-loss Millimeter-wave Resonators with an Improved Coupling Structure
Authors:
Alexander Anferov,
Shannon P. Harvey,
Fanghui Wan,
Kan-Heng Lee,
Jonathan Simon,
David I. Schuster
Abstract:
Millimeter-wave superconducting resonators are a useful tool for studying quantum device coherence in a new frequency domain. However, improving resonators is difficult without a robust and reliable method for coupling millimeter-wave signals to 2D structures. We develop and characterize a tapered transition structure coupling a rectangular waveguide to a planar slotline waveguide with better than…
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Millimeter-wave superconducting resonators are a useful tool for studying quantum device coherence in a new frequency domain. However, improving resonators is difficult without a robust and reliable method for coupling millimeter-wave signals to 2D structures. We develop and characterize a tapered transition structure coupling a rectangular waveguide to a planar slotline waveguide with better than 0.5 dB efficiency over 14 GHz, and use it to measure ground-shielded resonators in the W band (75 - 110 GHz). Having decoupled the resonators from radiative losses, we consistently achieve single-photon quality factors above $10^5$, with a two-level-system loss limit above $10^6$, and verify the effectiveness of oxide removal treatments to reduce loss. These values are 4-5 times higher than those previously reported in the W band, and much closer to typical planar microwave resonators. The improved losses demonstrated by these on-chip millimeter-wave devices shed new light on quantum decoherence in a different frequency regime, offer increased selectivity for high-frequency detectors, and enables new possibilities for hybrid quantum experiments integrating millimeter-wave frequencies.
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Submitted 21 February, 2024; v1 submitted 2 November, 2023;
originally announced November 2023.
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Quantum Dots / Spin Qubits
Authors:
Shannon Harvey
Abstract:
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been develop…
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Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.
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Submitted 8 April, 2022;
originally announced April 2022.
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Character of the "normal state" of the nickelate superconductors
Authors:
Kyuho Lee,
Bai Yang Wang,
Motoki Osada,
Berit H. Goodge,
Tiffany C. Wang,
Yonghun Lee,
Shannon Harvey,
Woo Jin Kim,
Yijun Yu,
Chaitanya Murthy,
Srinivas Raghu,
Lena F. Kourkoutis,
Harold Y. Hwang
Abstract:
The occurrence of superconductivity in proximity to various strongly correlated phases of matter has drawn extensive focus on their normal state properties, to develop an understanding of the state from which superconductivity emerges. The recent finding of superconductivity in layered nickelates raises similar interests. However, transport measurements of doped infinite-layer nickelate thin films…
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The occurrence of superconductivity in proximity to various strongly correlated phases of matter has drawn extensive focus on their normal state properties, to develop an understanding of the state from which superconductivity emerges. The recent finding of superconductivity in layered nickelates raises similar interests. However, transport measurements of doped infinite-layer nickelate thin films have been hampered by materials limitations of these metastable compounds - in particular, a relatively high density of extended defects. Here, by moving to a substrate (LaAlO$_{3}$)$_{0.3}$(Sr$_{2}$TaAlO$_{6}$)$_{0.7}$ which better stabilizes the growth and reduction conditions, we can synthesize the doping series of Nd$_{1-x}$Sr$_{x}$NiO$_{2}$ essentially free from extended defects. This enables the first examination of the 'intrinsic' temperature and doping dependent evolution of the transport properties. The normal state resistivity exhibits a low-temperature upturn in the underdoped regime, linear behavior near optimal doping, and quadratic temperature dependence for overdoping. This is strikingly similar to the copper oxides, despite key distinctions - namely the absence of an insulating parent compound, multiband electronic structure, and a Mott-Hubbard orbital alignment rather than the charge-transfer insulator of the copper oxides. These results suggest an underlying universality in the emergent electronic properties of both superconducting families.
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Submitted 4 March, 2022;
originally announced March 2022.
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Evidence for nodal superconductivity in infinite-layer nickelates
Authors:
Shannon P. Harvey,
Bai Yang Wang,
Jennifer Fowlie,
Motoki Osada,
Kyuho Lee,
Yonghun Lee,
Danfeng Li,
Harold Y. Hwang
Abstract:
Infinite-layer nickelates present a new family of potential unconventional superconductors. A key open question is the superconducting pairing symmetry. We present low-temperature measurements of the London penetration depth in optimally doped La_{0.8}Sr_{0.2}NiO_{2}, Pr_{0.8}Sr_{0.2}NiO_{2}, and Nd_{0.8}Sr_{0.2}NiO_{2}. For La and Pr-nickelates, the superfluid density shows a quadratic temperatur…
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Infinite-layer nickelates present a new family of potential unconventional superconductors. A key open question is the superconducting pairing symmetry. We present low-temperature measurements of the London penetration depth in optimally doped La_{0.8}Sr_{0.2}NiO_{2}, Pr_{0.8}Sr_{0.2}NiO_{2}, and Nd_{0.8}Sr_{0.2}NiO_{2}. For La and Pr-nickelates, the superfluid density shows a quadratic temperature dependence, indicating nodal superconductivity in the presence of disorder. Nd-nickelate exhibits complex low-temperature behavior, which we attribute to magnetic impurities. These results are consistent with d-wave pairing.
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Submitted 30 January, 2022;
originally announced January 2022.
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Parametric longitudinal coupling between a high-impedance superconducting resonator and a semiconductor quantum dot singlet-triplet spin qubit
Authors:
C. G. L. Bøttcher,
S. P. Harvey,
S. Fallahi,
G. C. Gardner,
M. J. Manfra,
U. Vool,
S. D. Bartlett,
A. Yacoby
Abstract:
Long-distance two-qubit coupling, mediated by a superconducting resonator, is a leading paradigm for performing entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a novel, controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impeda…
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Long-distance two-qubit coupling, mediated by a superconducting resonator, is a leading paradigm for performing entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a novel, controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impedance superconducting resonator can produce the desired longitudinal coupling when the qubit is driven near the resonator's frequency. We measure the energy splitting of the qubit as a function of the drive amplitude and frequency of a microwave signal applied near the resonator antinode, revealing pronounced effects close to the resonator frequency due to longitudinal coupling. By tuning the amplitude of the drive, we reach a regime with longitudinal coupling exceeding $1$ MHz. This demonstrates a new mechanism for qubit-resonator coupling, and represents a stepping stone towards producing high-fidelity two-qubit gates mediated by a superconducting resonator.
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Submitted 21 July, 2021;
originally announced July 2021.
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Low-density superconductivity in SrTiO$_3$ bounded by the adiabatic criterion
Authors:
Hyeok Yoon,
Adrian G. Swartz,
Shannon P. Harvey,
Hisashi Inoue,
Yasuyuki Hikita,
Yue Yu,
Suk Bum Chung,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use high-resolution planar-tunneling spectroscopy to probe chemically-doped SrTiO$_3$ across the superconducting dome. The over-doped superconducting boundary align…
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SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use high-resolution planar-tunneling spectroscopy to probe chemically-doped SrTiO$_3$ across the superconducting dome. The over-doped superconducting boundary aligns, with surprising precision, to the Fermi energy crossing the Debye energy. Superconductivity emerges with decreasing density, maintaining throughout the Bardeen-Cooper-Schrieffer (BCS) gap to transition-temperature ratio, despite being in the anti-adiabatic regime. At lowest superconducting densities, the lone remaining adiabatic phonon van Hove singularity is the soft transverse-optic mode, associated with the ferroelectric instability. We suggest a scenario for pairing mediated by this mode in the presence of spin-orbit coupling, which naturally accounts for the superconducting dome and BCS ratio.
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Submitted 20 June, 2021;
originally announced June 2021.
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Nickelate superconductivity without rare-earth magnetism: (La,Sr)NiO$_{2}$
Authors:
Motoki Osada,
Bai Yang Wang,
Berit H. Goodge,
Shannon P. Harvey,
Kyuho Lee,
Danfeng Li,
Lena F. Kourkoutis,
Harold Y. Hwang
Abstract:
The observation of superconductivity in infinite layer nickelate (Nd,Sr)NiO$_{2}$ thin films has led to rapid theoretical and experimental investigations of these copper-oxide-analogue systems [1-15]. Superconductivity has also been found in (Pr,Sr)NiO$_{2}$ [16,17], but not previously in (La,Sr)NiO$_{2}$ [2], raising a fundamental question whether superconductivity is associated with the presence…
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The observation of superconductivity in infinite layer nickelate (Nd,Sr)NiO$_{2}$ thin films has led to rapid theoretical and experimental investigations of these copper-oxide-analogue systems [1-15]. Superconductivity has also been found in (Pr,Sr)NiO$_{2}$ [16,17], but not previously in (La,Sr)NiO$_{2}$ [2], raising a fundamental question whether superconductivity is associated with the presence of rare-earth moments [18,19]. Here we show that with significant materials optimization, substantial portions of the La$_{1-x}$Sr$_{x}$NiO$_{2}$ phase diagram can enter the regime of coherent low-temperature transport ($x$ = 0.14 - 0.20), with subsequent superconducting transitions and a maximum onset of ~ 9 K at $x$ = 0.20. Additionally, we observe the unexpected indication of a superconducting ground state in undoped LaNiO$_{2}$, which likely reflects the self-doped nature of the electronic structure. Combining the results of (La/Pr/Nd)$_{1-x}$Sr$_{x}$NiO$_{2}$ reveals a generalized superconducting dome, characterized by systematic shifts in the unit cell volume and in the relative electron-hole populations across the lanthanides.
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Submitted 27 May, 2021;
originally announced May 2021.
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Isotropic Pauli-Limited Superconductivity in the Infinite Layer Nickelate Nd$_{0.775}$Sr$_{0.225}$NiO$_{2}$
Authors:
Bai Yang Wang,
Danfeng Li,
Berit H. Goodge,
Kyuho Lee,
Motoki Osada,
Shannon P. Harvey,
Lena F. Kourkoutis,
Malcolm R. Beasley,
Harold Y. Hwang
Abstract:
The recent observation of superconductivity in thin film infinite-layer nickelates$^{1-3}$ offers a different angle to investigate superconductivity in layered oxides$^{4}$. A wide range of candidate models have been proposed$^{5-10}$, emphasizing single- or multi-orbital electronic structure, Kondo or Hund's coupling, and analogies to cuprates. Clearly, further experimental characterization of th…
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The recent observation of superconductivity in thin film infinite-layer nickelates$^{1-3}$ offers a different angle to investigate superconductivity in layered oxides$^{4}$. A wide range of candidate models have been proposed$^{5-10}$, emphasizing single- or multi-orbital electronic structure, Kondo or Hund's coupling, and analogies to cuprates. Clearly, further experimental characterization of the superconducting state is needed to develop a full understanding of the nickelates. Here we use magnetotransport measurements to probe the superconducting anisotropy in Nd$_{0.775}$Sr$_{0.225}$NiO$_{2}$. We find that the upper critical field is surprisingly isotropic at low temperatures despite the layered crystal structure. In a magnetic field the superconductivity is strongly Pauli-limited, such that the paramagnetic effect dominates over orbital de-pairing. Underlying this isotropic response is a substantial anisotropy in the superconducting coherence length, which is at least four times longer in-plane than out-of-plane. A prominent low-temperature upturn in the upper critical field indicates the presence of an unconventional ground state.
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Submitted 11 December, 2020;
originally announced December 2020.
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Pressure-induced suppression of ferromagnetism in the itinerant ferromagnet LaCrSb$_3$
Authors:
Z. E. Brubaker,
J. S. Harvey,
J. R. Badger,
R. R. Ullah,
D. J. Campbell,
Y. Xiao,
P. Chow,
C. Kenney-Benson,
J. S. Smith,
C. Reynolds,
J. Paglione,
R. J. Zieve,
J. R. Jeffries,
V. Taufour
Abstract:
We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb$_3$. The ferromagnetic phase (T$_C$ = 120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr-moment decreases steadily with increasing pressure. The unit cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are…
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We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb$_3$. The ferromagnetic phase (T$_C$ = 120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr-moment decreases steadily with increasing pressure. The unit cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are in good agreement with theoretical predictions, but the Cr-moment decreases smoothly with pressure, in contrast to steplike drops predicted by theory. The ferromagnetic ordering temperature appears to be driven by the Cr-moment.
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Submitted 22 May, 2020;
originally announced May 2020.
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High-Energy Quasiparticle Injection into Mesoscopic Superconductors
Authors:
Loren D. Alegria,
Charlotte G. Bøttcher,
Andrew K. Saydjari,
Andrew T. Pierce,
Seung H. Lee,
Shannon P. Harvey,
Uri Vool,
Amir Yacoby
Abstract:
At nonzero temperatures, superconductors contain excitations known as Bogoliubov quasiparticles. The mesoscopic dynamics of quasiparticles inform the design of quantum information processors, among other devices. Knowledge of these dynamics stems from experiments in which quasiparticles are injected in a controlled fashion, typically at energies comparable to the pairing energy . Here we perform t…
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At nonzero temperatures, superconductors contain excitations known as Bogoliubov quasiparticles. The mesoscopic dynamics of quasiparticles inform the design of quantum information processors, among other devices. Knowledge of these dynamics stems from experiments in which quasiparticles are injected in a controlled fashion, typically at energies comparable to the pairing energy . Here we perform tunnel spectroscopy of a mesoscopic superconductor under high electric field. We observe quasiparticle injection due to field-emitted electrons with 10^6 times the pairing energy, an unexplored regime of quasiparticle dynamics. Upon application of a gate voltage, the quasiparticle injection decreases the critical current and, at sufficiently high electric field, the field-emission current (< 0.1 nA) switches the mesoscopic superconductor into the normal state, consistent with earlier results. We expect that high-energy injection will be useful for developing quasiparticle-tolerant quantum information processors, will allow rapid control of resonator quality factors, and will enable the design of electric-field-controlled superconducting devices with new functionality.
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Submitted 18 January, 2021; v1 submitted 1 May, 2020;
originally announced May 2020.
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Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers
Authors:
M. Brooks Tellekamp,
Karen N. Heinselman,
Steve Harvey,
Imran Khan,
Andriy Zakutayev
Abstract:
$β$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g…
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$β$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial $β$-Ga$_2$O$_3$ layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of $\sim$1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by $J-V$ and $C-V$ measurements, revealing an unintentional doping density of 4.3 $\times$ 10$^{16}$ cm$^{-3}$ - 2 $\times$ 10$^{17}$ cm$^{-3}$ in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the $β$-Ga$_2$O$_3$ homoepitaxial layers used in power electronic and other devices.
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Submitted 3 August, 2020; v1 submitted 17 April, 2020;
originally announced April 2020.
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Superconducting Dome in Nd$_{1-x}$Sr$_x$NiO$_2$ Infinite Layer Films
Authors:
Danfeng Li,
Bai Yang Wang,
Kyuho Lee,
Shannon P. Harvey,
Motoki Osada,
Berit H. Goodge,
Lena F. Kourkoutis,
Harold Y. Hwang
Abstract:
We report the phase diagram of Nd$_{1-x}$Sr$_x$NiO$_2$ infinite layer thin films grown on SrTiO$_3$. A superconducting dome spanning $0.125 < x < 0.25$ is found, remarkably similar to cuprates, albeit over a narrower doping window. However, while cuprate superconductivity is bounded by an insulator for underdoping and a metal for overdoping, here we observe weakly insulating behavior on either sid…
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We report the phase diagram of Nd$_{1-x}$Sr$_x$NiO$_2$ infinite layer thin films grown on SrTiO$_3$. A superconducting dome spanning $0.125 < x < 0.25$ is found, remarkably similar to cuprates, albeit over a narrower doping window. However, while cuprate superconductivity is bounded by an insulator for underdoping and a metal for overdoping, here we observe weakly insulating behavior on either side of the dome. Furthermore, the normal state Hall coefficient is always small and proximate to a continuous zero crossing in doping and in temperature, in contrast to the $\sim 1/x$ dependence observed for cuprates. This suggests the presence of both electron- and hole-like bands, consistent with band structure calculations.
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Submitted 23 June, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
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Universal energy-accuracy tradeoffs in nonequilibrium cellular sensing
Authors:
S. E. Harvey,
S. Lahiri,
S. Ganguli
Abstract:
We combine stochastic thermodynamics, large deviation theory, and information theory to derive fundamental limits on the accuracy with which single cell receptors can estimate external concentrations. As expected, if estimation is performed by an ideal observer of the entire trajectory of receptor states, then no energy consuming non-equilibrium receptor that can be divided into bound and unbound…
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We combine stochastic thermodynamics, large deviation theory, and information theory to derive fundamental limits on the accuracy with which single cell receptors can estimate external concentrations. As expected, if estimation is performed by an ideal observer of the entire trajectory of receptor states, then no energy consuming non-equilibrium receptor that can be divided into bound and unbound states can outperform an equilibrium two-state receptor. However, when estimation is performed by a simple observer that measures the fraction of time the receptor is bound, we derive a fundamental limit on the accuracy of general nonequilibrium receptors as a function of energy consumption. We further derive and exploit explicit formulas to numerically estimate a Pareto-optimal tradeoff between accuracy and energy. We find this tradeoff can be achieved by nonuniform ring receptors with a number of states that necessarily increases with energy. Our results yield a novel thermodynamic uncertainty relation for the time a physical system spends in a pool of states, and generalize the classic 1977 Berg-Purcell limit on cellular sensing along multiple dimensions.
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Submitted 17 December, 2021; v1 submitted 24 February, 2020;
originally announced February 2020.
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Magnetic fluctuations in the itinerant ferromagnet LaCrGe3 studied by 139La NMR
Authors:
K. Rana,
H. Kotegawa,
R. R. Ullah,
J. S. Harvey,
S. L. Bud'ko,
P. C. Canfield,
H. Tou,
V. Taufour,
Y. Furukawa
Abstract:
LaCrGe$_3$ is an itinerant ferromagnet with a Curie temperature of $T_{\rm c}$ = 85 K and exhibits an avoided ferromagnetic quantum critical point under pressure through a modulated antiferromagnetic phase as well as tri-critical wing structure in its temperature-pressure-magnetic field ($T$-$p$-$H$) phase diagram. In order to understand the static and dynamical magnetic properties of LaCrGe$_3$,…
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LaCrGe$_3$ is an itinerant ferromagnet with a Curie temperature of $T_{\rm c}$ = 85 K and exhibits an avoided ferromagnetic quantum critical point under pressure through a modulated antiferromagnetic phase as well as tri-critical wing structure in its temperature-pressure-magnetic field ($T$-$p$-$H$) phase diagram. In order to understand the static and dynamical magnetic properties of LaCrGe$_3$, we carried out $^{139}$La nuclear magnetic resonance (NMR) measurements. Based on the analysis of NMR data, using the self-consistent-renomalization (SCR) theory, the spin fluctuations in the paramagnetic state are revealed to be isotropic ferromagnetic and three dimensional (3D) in nature. Moreover, the system is found to follow the generalized Rhodes-Wohfarth relation which is expected in 3D itinerant ferromagnetic systems. As compared to other similar itinerant ferromagnets, the Cr 3$d$ electrons and their spin fluctuations are characterized to have a relatively high degree of localization in real space.
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Submitted 1 June, 2019;
originally announced June 2019.
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Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients
Authors:
Lucas A. Orona,
John M. Nichol,
Shannon P. Harvey,
Charlotte G. L. Bøttcher,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process b…
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Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process between the qubit and the lead. We probe this readout's performance as a function of magnetic field gradient and applied magnetic field, and optimize the pulse applied to the qubit through experiment and simulation.
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Submitted 22 February, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Coupling Two Spin Qubits with a High-Impedance Resonator
Authors:
S. P. Harvey,
C. G. L. Bøttcher,
L. A. Orona,
S. D. Bartlett,
A. C. Doherty,
A. Yacoby
Abstract:
Fast, high-fidelity single and two-qubit gates are essential to building a viable quantum information processor, but achieving both in the same system has proved challenging for spin qubits. We propose and analyze an approach to perform a long-distance two-qubit controlled phase (CPHASE) gate between two singlet-triplet qubits using an electromagnetic resonator to mediate their interaction. The qu…
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Fast, high-fidelity single and two-qubit gates are essential to building a viable quantum information processor, but achieving both in the same system has proved challenging for spin qubits. We propose and analyze an approach to perform a long-distance two-qubit controlled phase (CPHASE) gate between two singlet-triplet qubits using an electromagnetic resonator to mediate their interaction. The qubits couple longitudinally to the resonator, and by driving the qubits near the resonator's frequency they can be made to acquire a state-dependent geometric phase that leads to a CPHASE gate independent of the initial state of the resonator. Using high impedance resonators enables gate times of order 10 ns while maintaining long coherence times. Simulations show average gate fidelities of over 96% using currently achievable experimental parameters and over 99% using state-of-the-art resonator technology. After optimizing the gate fidelity in terms of parameters tuneable in-situ, we find it takes a simple power-law form in terms of the resonator's impedance and quality and the qubits' noise bath.
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Submitted 4 June, 2018; v1 submitted 15 January, 2018;
originally announced January 2018.
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Tuning methods for semiconductor spin--qubits
Authors:
Tim Botzem,
Michael D. Shulman,
Sandra Foletti,
Shannon P. Harvey,
Oliver E. Dial,
Patrick Bethke,
Pascal Cerfontaine,
Robert P. G. McNeil,
Diana Mahalu,
Vladimir Umansky,
Arne Ludwig,
Andreas Wieck,
Dieter Schuh,
Dominique Bougeard,
Amir Yacoby,
Hendrik Bluhm
Abstract:
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to t…
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We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference.
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Submitted 11 January, 2018;
originally announced January 2018.
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High-fidelity entangling gate for double-quantum-dot spin qubits
Authors:
John M. Nichol,
Lucas A. Orona,
Shannon P. Harvey,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress deco…
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Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking and self-consistent quantum measurement, state, and process tomography, we measure single-qubit gate fidelities of approximately 99% and an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
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Submitted 15 August, 2016;
originally announced August 2016.
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Electron spin-flip correlations due to nuclear dynamics in driven GaAs double dots
Authors:
Arijeet Pal,
John M. Nichol,
Michael D. Shulman,
Shannon P. Harvey,
Vladimir Umansky,
Emmanuel I. Rashba,
Amir Yacoby,
Bertrand I. Halperin
Abstract:
We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum dot containing two conduction electrons, which are loaded in the singlet state before each sweep, and the final spin is recorded after each sweep. The experiments…
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We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum dot containing two conduction electrons, which are loaded in the singlet state before each sweep, and the final spin is recorded after each sweep. The experiments reported here measure correlations on time scales from 4 $μ$s to 2 ms. When the magnetic field is aligned in a direction such that spin-orbit coupling cannot cause spin flips, the correlation spectrum has prominent peaks centered at zero frequency and at the differences of the Larmor frequencies of the nuclei, on top of a frequency-independent background. When the spin-orbit field is relevant, there are additional peaks, centered at the frequencies of the individual species. A theoretical model which neglects the effects of high-frequency charge noise correctly predicts the positions of the observed peaks, and gives a reasonably accurate prediction of the size of the frequency-independent background, but gives peak areas that are larger than the observed areas by a factor of two or more. The observed peak widths are roughly consistent with predictions based on nuclear dephasing times of the order of 60 $μ$s. However, there is extra weight at the lowest observed frequencies, which suggests the existence of residual correlations on the scale of 2 ms. We speculate on the source of these discrepancies.
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Submitted 13 August, 2016;
originally announced August 2016.
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Giant permanent dipole moment of 2D excitons bound to a single stacking fault
Authors:
Todd Karin,
Xiayu Linpeng,
M. M. Glazov,
M. V. Durnev,
E. L. Ivchenko,
Sarah Harvey,
Ashish K. Rai,
Arne Ludwig,
Andreas D. Wieck,
Kai-Mei C. Fu
Abstract:
We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential lea…
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We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.
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Submitted 6 June, 2016; v1 submitted 15 January, 2016;
originally announced January 2016.
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Quenching of dynamic nuclear polarization by spin-orbit coupling in GaAs quantum dots
Authors:
John M. Nichol,
Shannon P. Harvey,
Michael D. Shulman,
Arijeet Pal,
Vladimir Umansky,
Emmanuel I. Rashba,
Bertrand I. Halperin,
Amir Yacoby
Abstract:
The central-spin problem, in which an electron spin interacts with a nuclear spin bath, is a widely studied model of quantum decoherence. Dynamic nuclear polarization (DNP) occurs in central spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in spin-based quantum information processing for coherent electron and nuclear spin control. However, the mechanis…
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The central-spin problem, in which an electron spin interacts with a nuclear spin bath, is a widely studied model of quantum decoherence. Dynamic nuclear polarization (DNP) occurs in central spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in spin-based quantum information processing for coherent electron and nuclear spin control. However, the mechanisms limiting DNP remain only partially understood. Here, we show that spin-orbit coupling quenches DNP in a GaAs double quantum dot, even though spin-orbit coupling in GaAs is weak. Using Landau-Zener sweeps, we measure the dependence of the electron spin-flip probability on the strength and direction of in-plane magnetic field, allowing us to distinguish effects of the spin-orbit and hyperfine interactions. To confirm our interpretation, we measure high-bandwidth correlations in the electron spin-flip probability and attain results consistent with a significant spin-orbit contribution. We observe that DNP is quenched when the spin-orbit component exceeds the hyperfine, in agreement with a theoretical model. Our results shed new light on the surprising competition between the spin-orbit and hyperfine interactions in central-spin systems.
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Submitted 18 February, 2015;
originally announced February 2015.
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Suppressing qubit dephasing using real-time Hamiltonian estimation
Authors:
Michael D. Shulman,
Shannon P. Harvey,
John M. Nichol,
Stephen D. Bartlett,
Andrew C. Doherty,
Vladimir Umansky,
Amir Yacoby
Abstract:
Unwanted interaction between a quantum system and its fluctuating environment leads to decoherence and is the primary obstacle to establishing a scalable quantum information processing architecture. Strategies such as environmental and materials engineering, quantum error correction and dynamical decoupling can mitigate decoherence, but generally increase experimental complexity. Here we improve c…
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Unwanted interaction between a quantum system and its fluctuating environment leads to decoherence and is the primary obstacle to establishing a scalable quantum information processing architecture. Strategies such as environmental and materials engineering, quantum error correction and dynamical decoupling can mitigate decoherence, but generally increase experimental complexity. Here we improve coherence in a qubit using real-time Hamiltonian parameter estimation. Using a rapidly converging Bayesian approach, we precisely measure the splitting in a singlet-triplet spin qubit faster than the surrounding nuclear bath fluctuates. We continuously adjust qubit control parameters based on this information, thereby improving the inhomogenously broadened coherence time ($T_{2}^{*}$) from tens of nanoseconds to above 2 $μ$s and demonstrating the effectiveness of Hamiltonian estimation in reducing the effects of correlated noise in quantum systems. Because the technique demonstrated here is compatible with arbitrary qubit operations, it is a natural complement to quantum error correction and can be used to improve the performance of a wide variety of qubits in both metrological and quantum-information-processing applications.
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Submitted 2 May, 2014;
originally announced May 2014.
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Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
Authors:
O. E. Dial,
M. D. Shulman,
S. P. Harvey,
H. Bluhm,
V. Umansky,
A. Yacoby
Abstract:
Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,a…
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Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,and in metrology the frequency of the precession provides a sensitive measurement of the splitting. However, on a timescale of the coherence time, $T_2$, the qubit loses its quantum information due to interactions with its noisy environment, causing qubit oscillations to decay and setting a limit on the fidelity of quantum control and the precision of qubit-based measurements. Understanding how the qubit couples to its environment and the dynamics of the noise in the environment are therefore key to effective QIS experiments and metrology. Here we show measurements of the level splitting and dephasing due to voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Using free evolution and Hahn echo experiments we probe the low frequency and high frequency environmental fluctuations, respectively. The measured fluctuations at high frequencies are small, allowing the qubit to be used as a charge sensor with a sensitivity of $2 \times 10^{-8} e/\sqrt{\mathrm{Hz}}$, two orders of magnitude better than the quantum limit for an RF single electron transistor (RF-SET). We find that the dephasing is due to non-Markovian voltage fluctuations in both regimes and exhibits an unexpected temperature dependence. Based on these measurements we provide recommendations for improving $T_2$ in future experiments, allowing for higher fidelity operations and improved charge sensitivity.
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Submitted 7 April, 2013; v1 submitted 9 August, 2012;
originally announced August 2012.
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Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
Authors:
Michael D. Shulman,
Oliver E. Dial,
Shannon P. Harvey,
Hendrik Bluhm,
Vladimir Umansky,
Amir Yacoby
Abstract:
Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled states. Spin qubits are a promising candidate for implementing a quantum processor due to their potential for scalability and miniaturization. However, their w…
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Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled states. Spin qubits are a promising candidate for implementing a quantum processor due to their potential for scalability and miniaturization. However, their weak interactions with the environment, which leads to their long coherence times, makes inter-qubit operations challenging. We perform a controlled two-qubit operation between singlet-triplet qubits using a dynamically decoupled sequence that maintains the two-qubit coupling while decoupling each qubit from its fluctuating environment. Using state tomography we measure the full density matrix of the system and determine the concurrence and the fidelity of the generated state, providing proof of entanglement.
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Submitted 8 February, 2012;
originally announced February 2012.
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Nitrogen doping of TiO2 photocatalyst forms a second eg state in the Oxygen (1s) NEXAFS pre-edge
Authors:
Artur Braun,
Kranthi K. Akurati,
Giuseppino Fortunato,
Felix A. Reifler,
Axel Ritter,
Ashley S. Harvey,
Andri Vital,
Thomas Graule
Abstract:
Close inspection of the pre-edge in oxygen near-edge x-ray absorption fine structure spectra of single step, gas phase synthesized titanium oxynitride photocatalysts with 20 nm particle size reveals an additional eg resonance in the VB that went unnoticed in previous TiO2 anion doping studies. The relative spectral weight of this Ti(3d)-O(2p) hybridized state with respect to and located between th…
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Close inspection of the pre-edge in oxygen near-edge x-ray absorption fine structure spectra of single step, gas phase synthesized titanium oxynitride photocatalysts with 20 nm particle size reveals an additional eg resonance in the VB that went unnoticed in previous TiO2 anion doping studies. The relative spectral weight of this Ti(3d)-O(2p) hybridized state with respect to and located between the readily established t2g and eg resonances scales qualitatively with the photocatalytic decomposition power, suggesting that this extra resonance bears co-responsibility for the photocatalytic performance of titanium oxynitrides at visible light wavelengths.
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Submitted 6 June, 2011;
originally announced June 2011.
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Electron hole - phonon interaction and structural changes in La0.9Sr0.1FeO3 by temperature dependent conductivity and valence band photoemission spectros-copy
Authors:
A. Braun,
J. Richter,
A. S. Harvey,
A. Infortuna,
A. Frei,
E. Pomjakushina,
Bongjin S. Mun,
P. Holtappels,
U. Vogt,
K. Conder,
L. J. Gauckler,
T. Graule
Abstract:
Electric conductivity and structural details of the hole-doped polaron conductor La0.9Sr0.1FeO3 (LSF10) are reported. The conductivity of a single crystal shows an exponential increase with temperature with a maxi-mum of 100 S/cm at 700 K and with activation energy of about 375 meV, and a decrease for higher temperatures that follows a power law. The exponential increase of the electric conductivi…
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Electric conductivity and structural details of the hole-doped polaron conductor La0.9Sr0.1FeO3 (LSF10) are reported. The conductivity of a single crystal shows an exponential increase with temperature with a maxi-mum of 100 S/cm at 700 K and with activation energy of about 375 meV, and a decrease for higher temperatures that follows a power law. The exponential increase of the electric conductivity for 300 K {\leg} T {\leg} 700 is accompanied by a shift of spectral weight in the photoemission valence band towards the Fermi level, indicative of a strong electron-phonon interaction. The subsequent decrease of the conductivity for T > 700 K is accompanied by a reversible phase transformation from orthorhombic to rhombohedral symmetry. The decreasing conductivity for T > 700 K is likely due to the reduction of the iron due to oxygen loss causing a decreasing hole concentration, as evidenced by a substantial chemical shift in the Fe K-shell x-ray absorption spectra. Two additional fine structures in the conductivity data at 357 K, this is, a small temperature reversible jump in the conductivity, and at 573 K, a slight reversible increase of the polaron activation energy, are correlated with an exceptionally strong decrease in spectral valence band intensity near the Fermi level, and with the onset of a corresponding structural transition.
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Submitted 6 June, 2011;
originally announced June 2011.
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Direct evidence for electron hole depletion in La0.5Sr0.5FeO3-d upon B-site cation doping
Authors:
Artur Braun,
Defne Bayraktar,
Ashley S. Harvey,
Daniel Beckel,
John A. Purton,
Peter Holtappels,
Ludwig J. Gauckler,
Thomas Graule
Abstract:
Partial substitution of Fe by Ta in the hole-doped La0.5Sr0.5FeO3 decreases the electric conductivity by up to three orders of magnitude. This decrease is in immediate correlation with a decrease of the electron hole concentration and a shift of the spectral weight within the O(1s)-Fe(3d) mixed states from eg bands near the Fermi energy to t2g bands. Corresponding differences in the Fe(2p) and O(1…
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Partial substitution of Fe by Ta in the hole-doped La0.5Sr0.5FeO3 decreases the electric conductivity by up to three orders of magnitude. This decrease is in immediate correlation with a decrease of the electron hole concentration and a shift of the spectral weight within the O(1s)-Fe(3d) mixed states from eg bands near the Fermi energy to t2g bands. Corresponding differences in the Fe(2p) and O(1s) X-ray absorption spectra reveals formation of states with increased covalency in the initial state and states which contain O(2p) character, and that hole states are responsible for transport changes in the material. The intensity ratio of eg and t2g bands appears to be a spectral indicator for hole formation.
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Submitted 6 June, 2011;
originally announced June 2011.
