Showing 1–2 of 2 results for author: Haruyama, Y
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Growth Process of Hexagonal Boron Nitride in the Diffusion and Precipitation Method Studied by X-ray Photoelectron Spectroscopy
Authors:
Satoru Suzuki,
Yuichi Haruyama
Abstract:
Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by x-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 C. All through the process, the surface was always slightly B-rich, which is consistent with the fact that B which is soluble in Ni at a high temperature can diffuse in Ni by the…
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Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by x-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 C. All through the process, the surface was always slightly B-rich, which is consistent with the fact that B which is soluble in Ni at a high temperature can diffuse in Ni by the conventional bulk diffusion and insoluble N cannot. Moreover, both formation and decomposition of h-BN were found to occur at elevated temperatures possibly depending on provision of N atoms to the surface. On the Ni surface, decomposition of h-BN was observed at a relatively low temperature of 800 C.
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Submitted 1 July, 2019;
originally announced July 2019.
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Quasi-free-standing monolayer hexagonal boron nitride on Ni
Authors:
Satoru Suzuki,
Yuichi Haruyama,
Masahito Niibe,
Takashi Tokushima,
Akinobu Yamaguchi,
Yuichi Utsumi,
Atsushi Ito,
Ryo Kadowaki,
Akane Maruta,
Tadashi Abukawa
Abstract:
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN pi and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the q…
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The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN pi and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
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Submitted 18 October, 2018;
originally announced October 2018.
