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The mixed-state Hall conductivity of single-crystal films $Nd_{2-x}Ce_xCuO_{4+δ}$ (x=0.14)
Authors:
N. G. Shelushinina,
G. I. Harus,
T. B. Charikova,
D. S. Petukhov,
O. E. Petukhova,
A. A. Ivanov
Abstract:
The magnetic-field dependencies of the longitudinal and Hall resistivity of the electron-doped compounds $Nd_{2-x}Ce_xCuO_{4+δ}$ in underdoped region (x=0.14) were investigated. It was established experimentally a strong magnetic field dependence of the Hall conductivity, $σ_{xy}(B)=C-b/B$, in the region of magnetic fields corresponding to a transition from superconducting to resistive state. The…
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The magnetic-field dependencies of the longitudinal and Hall resistivity of the electron-doped compounds $Nd_{2-x}Ce_xCuO_{4+δ}$ in underdoped region (x=0.14) were investigated. It was established experimentally a strong magnetic field dependence of the Hall conductivity, $σ_{xy}(B)=C-b/B$, in the region of magnetic fields corresponding to a transition from superconducting to resistive state. The observed feature can be explained with the sum of contributions of the quasiparticles and moving Abrikosov vortices into Hall effect in a mixed state of type-II superconductor.
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Submitted 30 November, 2016;
originally announced November 2016.
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Resistivity tensor correlations in the mixed state of electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
D. S. Petukhov,
O. E. Petukhova,
A. A. Ivanov
Abstract:
The magnetic-field dependencies of the longitudinal and Hall resistance of the electron-doped compounds Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ in underdoped region with $x$=0.14 and with varying degrees of disorder ($δ$) were investigated. It was established experimentally that the correlation between the longitudinal electrical resistivity and the Hall resistivity can be analyzed on the basis of scaling rel…
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The magnetic-field dependencies of the longitudinal and Hall resistance of the electron-doped compounds Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ in underdoped region with $x$=0.14 and with varying degrees of disorder ($δ$) were investigated. It was established experimentally that the correlation between the longitudinal electrical resistivity and the Hall resistivity can be analyzed on the basis of scaling relationships: $ρ_{xy}$($B$)$\sim$ $ρ^β_{xx}$($B$). For the totality of the investigated single-crystal films of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$/SrTiO$_3$ the universal value $β$=1.5 $\pm$0.4 is found. The observed feature in the electron-doped two-dimensional systems can be associated both with a displaying of anisotropic $s$ - wave or $d$-wave pairing symmetry and with a rather strong pinning due to an essential degree of disorder in the samples under study.
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Submitted 19 January, 2016;
originally announced January 2016.
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Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
V. N. Neverov,
D. S. Petukhov,
O. E. Petukhova,
A. A. Ivanov
Abstract:
We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the c…
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We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the critical temperature decrease with increasing of the disorder parameter (d-wave pairing) while in the case of the underdoped system the critical temperature remains constant and (dHc2/dT)|Tc increases with increasing of the disorder (s-wave pairing). These features suggest a possible implementation of the complex mixture state as the (s+id)-pairing.
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Submitted 2 September, 2014;
originally announced September 2014.
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Upper critical field in electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$: two-gap model
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
D. S. Petukhov,
V. N. Neverov,
A. A. Ivanov
Abstract:
We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.
We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.
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Submitted 26 December, 2012;
originally announced December 2012.
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Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
D. S. Petukhov,
A. V. Korolev,
V. N. Neverov,
A. A. Ivanov
Abstract:
Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with…
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Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with $R_H$$^n$(x) analysis an anomalous sign reversal of Hall effect in mixed state at $B<B_{c2}$ may be ascribed to a flux-flow regime for two types of carriers with opposite charges.
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Submitted 29 September, 2011;
originally announced September 2011.
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The estimation of coherence length for electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$
Authors:
T. B. Charikova,
G. I. Harus,
N. G. Shelushinina,
O. E. Sochinskaya
Abstract:
Results of low-temperature upper critical field measurements for Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystals with various $x$ and nonstoichiometric disorder ($δ$) are presented. The coherence length of pair correlation $ξ$ and the product $k_F$$ξ$, where $k_F$ is the Fermi wave vector, are estimated. It is shown that for investigated single crystals parameter $k_F$$ξ$ $\cong$ 100 and thus phenomen…
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Results of low-temperature upper critical field measurements for Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystals with various $x$ and nonstoichiometric disorder ($δ$) are presented. The coherence length of pair correlation $ξ$ and the product $k_F$$ξ$, where $k_F$ is the Fermi wave vector, are estimated. It is shown that for investigated single crystals parameter $k_F$$ξ$ $\cong$ 100 and thus phenomenologically NdCeCuO - system is in a range of Cooper-pair-based (BCS) superconductivity.
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Submitted 21 October, 2010;
originally announced October 2010.
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Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
V. N. Neverov,
D. S. Petukhov,
O. E. Sochinskaya,
A. A. Ivanov
Abstract:
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of…
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Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of the back-flow of vortices owing to the pinning forces.
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Submitted 1 October, 2010;
originally announced October 2010.
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Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Authors:
Yu. G. Arapov,
S. V. Gudina,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
S. M. Podgornyh,
E. A. Uskova,
B. N. Zvonkov
Abstract:
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0…
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The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.
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Submitted 28 December, 2005;
originally announced December 2005.
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Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Authors:
Yu. G. Arapov,
V. N. Neverov,
G. I. Harus,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov,
A. de Visser,
L. Ponomarenko
Abstract:
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) be…
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For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.
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Submitted 15 April, 2004;
originally announced April 2004.
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Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov,
B. N. Zvonkov,
E. A. Uskova,
L. Ponomarenko,
A. de Visser
Abstract:
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect…
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In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.
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Submitted 6 June, 2003;
originally announced June 2003.
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Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures
Authors:
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
A. T. Lonchakov,
N. G. Shelushinina,
M. V. Yakunin
Abstract:
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samp…
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We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute such a behavior to the interplay of two types of holes due to partial filling of the second subband. Extrapolation of the observed high-field parabolic MR to B = 0 allows to separate WL and EEI contributions to the total quantum corrections to conductivity at B = 0 resulting for both of our structures in that EEI part is ~2/3 and the WL part is ~1/3.
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Submitted 27 December, 2002;
originally announced December 2002.
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The interplay of superconductivity and localization in Nd{2-x}Ce{x}CuO{4+δ} single crystal films
Authors:
G. I. Harus,
A. I. Ponomarev,
A. N. Ignatenkov,
T. B. Charikova,
L. D. Sabirzyanova,
N. G. Shelushinina,
V. F. Elesin,
A. A. Ivanov,
I. A. Rudnev
Abstract:
The influence of nonstoichiometric disorder on the in-plane resistivity and SC-transition has been investigated for
Nd{2-x}Ce{x}CuO{4+δ} single crystal films (x=0.15 and 0.18). It is shown that with increasing of $δ$ the in-plane normal state resistivity increases (the mean free path diminishes) and SC-transition temperature decreases with essential broadening of the transition region. The obs…
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The influence of nonstoichiometric disorder on the in-plane resistivity and SC-transition has been investigated for
Nd{2-x}Ce{x}CuO{4+δ} single crystal films (x=0.15 and 0.18). It is shown that with increasing of $δ$ the in-plane normal state resistivity increases (the mean free path diminishes) and SC-transition temperature decreases with essential broadening of the transition region. The observed evolution from homogeneous metallic (and superconducting)
Nd{2-x}Ce{x}CuO{4+δ} system to inhomogeneous dielectric one is described as Anderson-type disorder-induced transition in a two-dimensional electron system.
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Submitted 6 May, 2002;
originally announced May 2002.
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Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures
Authors:
Yu. G. Arapov,
G. I. Harus,
O. A. Kuznetsov,
V. N. Neverov,
N. G. Shelushinina
Abstract:
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attr…
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Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F_/sigma = 0.44) and the WL and EEI contributions to the total quantum correction /Delta /sigma at B = 0 are separated (/Delta /sigma_{WL} ~ 0.3/Delta /sigma; /Delta /sigma_{EEI} ~ 0.7/Delta /sigma).
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Submitted 21 March, 2002;
originally announced March 2002.
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The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Authors:
Yu. G. Arapov,
G. A. Alshanskii,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside t…
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We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models. For half-integer filling factors the linear temperature dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is observed in contrast to scaling behavior for systems with short-range disorder. The finite T -> 0 width of QHE transitions may be due to an effective low temperature screening of smooth random potential owing to Coulomb repulsion of electrons.
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Submitted 13 November, 2001;
originally announced November 2001.
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Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Authors:
Yu. G. Arapov,
O. A. Kuznetsov,
V. N. Neverov,
G. I. Harus,
N. G. Shelushinina,
M. V. Yakunin
Abstract:
Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density o…
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Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.
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Submitted 15 May, 2001;
originally announced May 2001.
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Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of th…
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We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of the inter-Landau-level (LL) gaps deduced from the activated magnetotransport etc] to the quantum well (QW) characteristics has been revealed in the cases when the Fermi level reaches the second confinement subband. The background density of states (5-10)x10^{14} m^{-2}meV^{-1} deduced from the activation behavior of the magnetoresistance is too high to be attributed to the LL tails, but may be accounted for within a smooth random potential model. The hole gas in the Ge QW has been found to separate into two sublayers for d_w > ~35 nm and p_s = ~5x10^{15} m^{-2}. A dramatic indication to this separation is the disappearance of the quantum Hall (QH) plateau for the filling factor nu = 1 as calculated for the whole Ge layer. Concomitantly a positive magnetoresistance emerges in the weakest fields, from which about a factor of two different mobilities in the sublayers have been deduced. A model is suggested to explain the existence of the QH plateaux close to the fundamental values in a system of two parallel layers with different mobilities. A comparison of the simulated structure of the QH magnetoresistivity with the experimental one indicates that the hole densities in the sublayers are not much different. Thus, the different mobilities are due to different quality of the normal and inverted interfaces of the Ge QW.
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Submitted 16 March, 2001;
originally announced March 2001.
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Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}
Authors:
G. I. Harus,
A. N. Ignatenkov,
A. I. Ponomarev,
L. D. Sabirzyanova,
N. G. Shelushinina,
A. A. Ivanov
Abstract:
A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak localization effects are found both in a normally conducting underdoped sample (x = 0.12) and in situ superconducting optimally doped (x = 0.15) or overdoped…
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A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak localization effects are found both in a normally conducting underdoped sample (x = 0.12) and in situ superconducting optimally doped (x = 0.15) or overdoped (x = 0.18) samples in a high magnetic field B > B{c2}. The phase coherence time and the effective thickness of a CuO{2} conducting layer {d} (~ 1.5 A) have been estimated by fitting 2D weak localization theory expressions to the magnetoresistivity data for magnetic fields perpendicular to the {ab} plane and in plane. Estimates of the parameter {d} ensure the condition of strong carrier confinement and justify a model consisting of almost decoupled 2D metallic sheets for the Nd{2-x}Ce{x}CuO{4-d} single crystal.
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Submitted 30 November, 1999;
originally announced December 1999.
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Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals
Authors:
G. I. Harus,
A. N. Ignatenkov,
A. I. Ponomarev,
L. D. Sabirzyanova,
N. G. Shelushinina,
N. A. Babushkina
Abstract:
The 2D weak localization effects at low temperatures T = (0.2-4.2)K have been investigated in nonsuperconducting sample Nd{1.88}Ce{0.12}CuO{4-d} and in the normal state of the superconducting sample Nd{1.82}Ce{0.18}CuO{4-d} for B>B_c2. The phase coherence time and the effective thickness $d$ of a conducting CuO_2 layer have been estimated by the fitting of 2D weak localization theory expressions…
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The 2D weak localization effects at low temperatures T = (0.2-4.2)K have been investigated in nonsuperconducting sample Nd{1.88}Ce{0.12}CuO{4-d} and in the normal state of the superconducting sample Nd{1.82}Ce{0.18}CuO{4-d} for B>B_c2. The phase coherence time and the effective thickness $d$ of a conducting CuO_2 layer have been estimated by the fitting of 2D weak localization theory expressions to the magnetoresistivity data for the normal to plane and the in-plane magnetic fields.
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Submitted 19 November, 1999;
originally announced November 1999.
