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A new FDSOI spin qubit platform with 40nm effective control pitch
Authors:
T. Bédécarrats,
B. Cardoso Paz,
B. Martinez Diaz,
H. Niebojewski,
B. Bertrand1,
N. Rambal,
C. Comboroure,
A. Sarrazin,
F. Boulard,
E. Guyez,
J. -M. Hartmann,
Y. Morand,
A. Magalhaes-Lucas,
E. Nowak,
E. Catapano,
M. Cassé,
M. Urdampilleta,
Y. -M. Niquet,
F. Gaillard,
S. De Franceschi,
T. Meunier,
M. Vinet
Abstract:
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides…
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Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.
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Submitted 7 April, 2023;
originally announced April 2023.
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Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Authors:
A. Elbaz,
D. Buca,
N. Von den Driesch,
K. Pantzas,
G. Patriarche,
N. Zerounian,
E. Herth,
X. Checoury,
S. Sauvage,
I. Sagnes,
A. Foti,
R. Ossikovski,
J. -M. Hartmann,
F. Boeuf,
Z. Ikonic,
P. Boucaud,
D. Grutzmacher,
M. El Kurdi
Abstract:
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la…
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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
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Submitted 14 January, 2020;
originally announced January 2020.
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Towards scalable silicon quantum computing
Authors:
M. Vinet,
L. Hutin,
B. Bertrand,
S. Barraud,
J. -M. Hartmann,
Y. -J. Kim,
V. Mazzocchi,
A. Amisse,
H. Bohuslavskyi,
L. Bourdet,
A. Crippa,
X. Jehl,
R. Maurand,
Y. -M. Niquet,
M. Sanquer,
B. Venitucci,
B. Jadot,
E. Chanrion,
P. -A. Mortemousque,
C. Spence,
M. Urdampilleta,
S. De Franceschi,
T. Meunier
Abstract:
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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Submitted 20 December, 2019;
originally announced December 2019.
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Uniaxially stressed germanium with fundamental direct band gap
Authors:
R. Geiger,
T. Zabel,
E. Marin,
A. Gassenq,
J. -M. Hartmann,
J. Widiez,
J. Escalante,
K. Guilloy,
N. Pauc,
D. Rouchon,
G. Osvaldo Diaz,
S. Tardif,
F. Rieutord,
I. Duchemin,
Y. -M. Niquet,
V. Reboud,
V. Calvo,
A. Chelnokov,
J. Faist,
H. Sigg
Abstract:
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a…
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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Submitted 10 December, 2015;
originally announced March 2016.
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Spin injection in Silicon at zero magnetic field
Authors:
L. Grenet,
M. Jamet,
P. Noé,
V. Calvo,
J. -M. Hartmann,
L. E. Nistor,
B. Rodmacq,
S. Auffret,
P. Warin,
Y. Samson
Abstract:
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the cir…
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In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.
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Submitted 15 January, 2009;
originally announced January 2009.
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Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots
Authors:
E. B. Olshanetsky,
Vincent Thomas Francois Renard,
Z. D. Kvon,
J. -C. Portal,
J. -M. Hartmann
Abstract:
In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In sam…
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In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.
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Submitted 21 September, 2006;
originally announced September 2006.
