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Conductivity of LaAlO/SrTiO3 Interfaces made by Sputter Deposition
Authors:
I. M. Dildar,
D. B. Boltje,
M. H. S. Hesselberth,
Q. Xu,
H. W. Zandbergen,
S. Harkema
Abstract:
We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measu…
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We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measured by EDX is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by Pulsed Laser Deposition because of the different interplay between stoichiometry, mixing and oxygen vacancies.
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Submitted 21 November, 2011;
originally announced November 2011.
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Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling
Authors:
H. J. H. Smilde,
A. A. Golubov,
Ariando,
G. Rijnders,
J. M. Dekkers,
S. Harkema,
D. H. A. Blank,
H. Rogalla,
H. Hilgenkamp
Abstract:
We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}% \cong 1.8$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $θ$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($θ$)-dependence presents 2-fold…
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We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}% \cong 1.8$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $θ$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($θ$)-dependence presents 2-fold symmetry. The minima in $I_{c}R_{n}$ at $θ\cong 50^{\circ}$ suggest a real s-wave subdominant component and negligible $d_{xy}$-wave or imaginary s-wave admixtures. The $I_{c}R_{n}$($θ$)-dependence is well-fitted by 83% $d_{x^{2}-y^{2}}$-, 15% isotropic $s$- and 2% anisotropic s-wave order parameter symmetry, consistent with $Δ_{b}/Δ_{a} \cong 1.5$.
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Submitted 26 October, 2005;
originally announced October 2005.
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Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition
Authors:
A. Brinkman,
D. Mijatovic,
G. Rijnders,
V. Leca,
H. J. H. Smilde,
I. Oomen,
A. A. Golubov,
F. Roesthuis,
S. Harkema,
H. Hilgenkamp,
D. H. A. Blank,
H. Rogalla
Abstract:
Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the la…
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Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.
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Submitted 8 March, 2001;
originally announced March 2001.
