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Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis
Authors:
James G. Champlain,
Vikrant J. Gokhale,
Matthew T. Hardy,
Eric N. Jin
Abstract:
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly represent the behavior of most practical structures, resulting in incorrect electronic material property extraction and evaluation. The methodology and model presented…
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A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly represent the behavior of most practical structures, resulting in incorrect electronic material property extraction and evaluation. The methodology and model presented in this paper properly characterizes practical structures and can be employed to more accurately understand and evaluate experimental results, extract various electronic and dielectric properties of the constituent materials, and predict possible behavior of new structures and materials. The impact of dielectric properties (e.g., real versus complex permittivity, conductance, Cole-Cole dielectric response) and geometry on observed behavior of practical structures, especially with regard to extracting correct property values, is discussed.
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Submitted 26 March, 2025;
originally announced March 2025.
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Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
Authors:
Vikrant J. Gokhale,
James G. Champlain,
Matthew T. Hardy,
James L. Hart,
Andrew C. Lang,
Saikat Mukhopadhyay,
Jason A. Roussos,
Shawn C. Mack,
Gabriel Giribaldi,
Luca Colombo,
Matteo Rinaldi,
Brian P. Downey
Abstract:
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-fraction (30%-40% ScN fraction) samples from 20 Hz to 10 GHz. We find that real permittivity ε' increases significantly with increasing ScN fraction; a trend con…
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We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-fraction (30%-40% ScN fraction) samples from 20 Hz to 10 GHz. We find that real permittivity ε' increases significantly with increasing ScN fraction; a trend confirmed by density functional theory. Further, ε' is strongly dispersive with frequency and increasing ScN fraction, with values for Sc0.4Al0.6N varying from 150 down to 60 with increasing frequency. Loss, dispersion, and DC leakage current correspondingly increase with ScN fraction. The high ε' and strongly dispersive behavior in MBE ScAlN are not observed in a sputter-deposited ScAlN control with a similar ScN fraction, highlighting fundamental differences between films produced by the two deposition methods. Microscopy and spectroscopy analyses are carried out on MBE- and sputter-deposited samples to compare microstructure, alloy, and dopant concentration.
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Submitted 6 February, 2025;
originally announced February 2025.
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Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures
Authors:
Daniel C. Ratchford,
Christopher J. Winta,
Ioannis Chatzakis,
Chase T. Ellis,
Nikolai C. Passler,
Jonathan Winterstein,
Pratibha Dev,
Ilya Razdolski,
Joseph G. Tischler,
Igor Vurgaftman,
Michael B. Katz,
Neeraj Nepal,
Matthew T. Hardy,
Jordan A. Hachtel,
Juan Carlos Idrobo,
Thomas L. Reinecke,
Alexander J. Giles,
D. Scott Katzer,
Nabil D. Bassim,
Rhonda M. Stroud,
Martin Wolf,
Alexander Paarmann,
Joshua D. Caldwell
Abstract:
Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technological opportunities for nanophotonics in the infrared (IR) spectral region. Here, we present a novel approach to overcome the major limitation of SPhPs, namely the narrow, material-specific spectral range where SPhPs can be…
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Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technological opportunities for nanophotonics in the infrared (IR) spectral region. Here, we present a novel approach to overcome the major limitation of SPhPs, namely the narrow, material-specific spectral range where SPhPs can be supported, called the Reststrahlen band. We use an atomic-scale superlattice (SL) of two polar semiconductors, GaN and AlN, to create a hybrid material featuring layer thickness-tunable optic phonon modes. As the IR dielectric function is governed by the optic phonon behavior, such control provides a means to create a new dielectric function distinct from either constituent material and to tune the range over which SPhPs can be supported. This work offers the first glimpse of the guiding principles governing the degree to which the dielectric function can be designed using this approach.
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Submitted 18 June, 2018;
originally announced June 2018.
