Magnetically tunable Shubnikov-de Hass oscillations in MnBi2Te4
Authors:
X. Lei,
L. Zhou,
Z. Y. Hao,
H. T. Liu,
S. Yang,
H. P. Sun,
X. Z. Ma,
C. Ma,
H. Z. Lu,
J. W. Mei,
J. N. Wang,
H. T. He
Abstract:
Shubnikov-de Hass oscillations are directly observed in undoped antiferromagnetic topological insulator MnBi2Te4. With increasing magnetic fields, the oscillation period decreases gradually in the magnetic transition from canted antiferromagnetism to ferromagnetism and then saturates in high magnetic fields, indicating the field-induced evolution of the band structure. From the analysis of the hig…
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Shubnikov-de Hass oscillations are directly observed in undoped antiferromagnetic topological insulator MnBi2Te4. With increasing magnetic fields, the oscillation period decreases gradually in the magnetic transition from canted antiferromagnetism to ferromagnetism and then saturates in high magnetic fields, indicating the field-induced evolution of the band structure. From the analysis of the high-field oscillations, a nontrivial Berry phase and a small effective mass are extracted, in agreement with the predicted Weyl semimetal phase in ferromagnetic MnBi2Te4. Furthermore, rotating the magnetization of MnBi2Te4 can lead to a splitting of the high-field oscillations, which suggests the enhanced asymmetry of the Weyl cones in tilted fields. Therefore, the observation of these magnetically tunable quantum oscillations clearly demonstrates the indispensable role of field in tuning the band structure or physical properties of MnBi2Te4.
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Submitted 20 December, 2021;
originally announced December 2021.
Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4
Authors:
X. Lei,
L. Zhou,
Z. Y. Hao,
X. Z. Ma,
C. Ma,
Y. Q. Wang,
P. B. Chen,
B. C. Ye,
L. Wang,
F. Ye,
J. N. Wang,
J. W. Mei,
H. T. He
Abstract:
Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states i…
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Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MBT is also noticed, which might suggest the gap opening of surface states due to the paramagnetic-antiferromagnetic phase transition of MBT. Besides these, the failure of the disorder and quantum LMR model in explaining the observed LMR indicates new physics must be invoked to understand this phenomenon.
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Submitted 22 September, 2020;
originally announced September 2020.
