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Emergence of Diverse Topological States in Ge Doped MnBi2Te4
Authors:
Zhijian Shi,
Shengjie Xu,
Jianfeng Wang,
Yi Du,
Weichang Hao
Abstract:
As an ideal platform for studying interplays between symmetry, topology and magnetism, the magnetic topological insulator (MTI) MnBi2Te4 has attracted extensive attentions. However, its strong n-type intrinsic defects hinder the realizations of exotic phenomena. Stimulated by recent discoveries that Ge doping can efficiently tune the position of Fermi level, here we systematically investigate the…
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As an ideal platform for studying interplays between symmetry, topology and magnetism, the magnetic topological insulator (MTI) MnBi2Te4 has attracted extensive attentions. However, its strong n-type intrinsic defects hinder the realizations of exotic phenomena. Stimulated by recent discoveries that Ge doping can efficiently tune the position of Fermi level, here we systematically investigate the band evolution and topological phase diagram with doping concentration from MTI MnBi2Te4 to strong topological insulator GeBi2Te4. Different from magnetically doped Bi2Se3, the topology here is determined by competition of two band inversions arising from band folding of two time-reversal invariant momenta between antiferromagnetic and nonmagnetic/ferromagnetic unit cells. By employing a band momentum mapping method, besides the known MTI phase, remarkably, we find two classes of magnetic Dirac semimetal phases at antiferromagnetic state, two classes of Weyl semimetal phases at ferromagnetic state, and an intermediate trivial state at different doping regions. Interestingly, the trivial state can be tuned into a Weyl phase with two coexisting band inversions and extraordinarily long Fermi arcs by a small strain. Our work reveals diverse topological states with intrinsic quantum phenomena can be achieved with great potential for designing future electronic devices.
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Submitted 28 May, 2025;
originally announced May 2025.
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Controllable and Continuous Quantum Phase Transitions in Intrinsic Magnetic Topological Insulator
Authors:
Shengjie Xu,
Zhijian Shi,
Ming Yang,
Jingwei Zhang,
Hang Xu,
Haifeng Feng,
Ningyan Cheng,
Jianfeng Wang,
Weichang Hao,
Yi Du
Abstract:
The intrinsic magnetic topological material MnBi2Te4 has demonstrated great potential to investigate the interplay between topology and magnetism, which opens up new avenues for manipulating non-trivial electronic states and designing quantum devices. However, challenges and controversies remain due to its inevitable n-type antisite defects, hindering the experimental realization of intrinsic magn…
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The intrinsic magnetic topological material MnBi2Te4 has demonstrated great potential to investigate the interplay between topology and magnetism, which opens up new avenues for manipulating non-trivial electronic states and designing quantum devices. However, challenges and controversies remain due to its inevitable n-type antisite defects, hindering the experimental realization of intrinsic magnetic topological phenomena and rendering the precise control of topological phase transitions (TPTs) unachievable. Here, we study a candidate material family, Mn(1-x)GexBi2Te4, in which the heavy n-type doping features are strongly suppressed when the Ge content reaches 0.46, and multiple topological phases are well maintained with the surface Dirac point located near the Fermi level. Based on angle-resolved photoemission spectroscopy, transport measurements, and first-principles calculations, we reveal two magnetism-induced TPTs: the first is antiferromagnetic-ordering-induced transition from strong topological insulator to a magnetic topological insulator as revealed by gap opening of topological surface states; the second is external-magnetic-field-dependent transition from magnetic topological insulator to a Weyl semimetal with the gap reclosed. Our work paves the way for the realization of intrinsic magnetic topological states in MnBi2Te4 family and provides an ideal platform for achieving controllable and continuous TPTs towards future spintronic applications.
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Submitted 7 March, 2025;
originally announced March 2025.
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Two-dimensional Si spin qubit arrays with multilevel interconnects
Authors:
Sieu D. Ha,
Edwin Acuna,
Kate Raach,
Zachery T. Bloom,
Teresa L. Brecht,
James M. Chappell,
Maxwell D. Choi,
Justin E. Christensen,
Ian T. Counts,
Dominic Daprano,
J. P. Dodson,
Kevin Eng,
David J. Fialkow,
Christina A. C. Garcia,
Wonill Ha,
Thomas R. B. Harris,
nathan holman,
Isaac Khalaf,
Justine W. Matten,
Christi A. Peterson,
Clifford E. Plesha,
Matthew J. Ruiz,
Aaron Smith,
Bryan J. Thomas,
Samuel J. Whiteley
, et al. (4 additional authors not shown)
Abstract:
The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semi…
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The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.
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Submitted 12 February, 2025;
originally announced February 2025.
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Mass Acquisition of Dirac Fermions in Bi4I4 by Spontaneous Symmetry Breaking
Authors:
Ming Yang,
Wenxuan Zhao,
Dan Mu,
Zhijian Shi,
Jingyuan Zhong,
Yaqi Li,
Yundan Liu,
Jianxin Zhong,
Ningyan Cheng,
Wei Zhou,
Jianfeng Wang,
Yan Shi,
Ying Sun,
Weichang Hao,
Lexian Yang,
Jincheng Zhuang,
Yi Du
Abstract:
Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry (TRS) in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies…
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Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry (TRS) in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi4I4, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the TRS. Combined with first-principle calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edges states at the opposite sides of monolayer Bi4I4 after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account. Our results not only demonstrate the formation of the massive Dirac fermions by spontaneous symmetry breaking, but also imply the potential for the engineering of Dirac fermions for device applications.
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Submitted 17 December, 2024;
originally announced December 2024.
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Coherent control of a triangular exchange-only spin qubit
Authors:
Edwin Acuna,
Joseph D. Broz,
Kaushal Shyamsundar,
Antonio B. Mei,
Colin P. Feeney,
Valerie Smetanka,
Tiffany Davis,
Kangmu Lee,
Maxwell D. Choi,
Brydon Boyd,
June Suh,
Wonill D. Ha,
Cameron Jennings,
Andrew S. Pan,
Daniel S. Sanchez,
Matthew D. Reed,
Jason R. Petta
Abstract:
We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking,…
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We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking, with an average single-qubit gate fidelity F = 99.84%. The compact triangular device geometry can be readily scaled to larger two-dimensional quantum dot arrays with high connectivity.
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Submitted 5 June, 2024;
originally announced June 2024.
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Towards Layer-Selective Quantum Spin Hall Channels in Weak Topological Insulator Bi4Br2I2
Authors:
Jingyuan Zhong,
Ming Yang,
Zhijian Shi,
Yaqi Li,
Dan Mu,
Yundan Liu,
Ningyan Cheng,
Wenxuan Zhao,
Weichang Hao,
Jianfeng Wang,
Lexian Yang,
Jincheng Zhuang,
Yi Du
Abstract:
Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically nontrivial edge channels. However, the currently available weak topological insulators are stacks of the same quantum spin Hall layer with translational symmetry in the out-of-plane direction, leading to the absence o…
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Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically nontrivial edge channels. However, the currently available weak topological insulators are stacks of the same quantum spin Hall layer with translational symmetry in the out-of-plane direction, leading to the absence of the channel degree of freedom for edge states. Here, we study a candidate weak topological insulator, Bi4Br2I2, which is alternately stacked by three different quantum spin Hall insulators, each with tunable topologically non-trivial edge states. Our angle-resolved photoemission spectroscopy and first-principles calculations show that an energy gap opens at the crossing points of different Dirac cones correlated with different layers due to the interlayer interaction. This is essential to achieve the tunability of topological edge states as controlled by varying the chemical potential. Our work offers a perspective for the construction of tunable quantized conductance devices for future spintronic applications.
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Submitted 16 August, 2023;
originally announced August 2023.
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High-Entropy Enhanced Negative Thermal Expansion Perfomance in Antiperovkites
Authors:
Xiuliang Yuan,
Bing Wang,
Ying Sun,
Huaiming Guo,
Kewen Shi,
Sihao Deng,
Lunhua He,
Huiqing Lu,
Hong Zhang,
Shengdi Xu,
Yi Du,
Weichang Hao,
Shengqi Chu,
Zhijie Ma,
Shihai An,
Jin Cui,
Dongmei Hu,
Huiming Han,
Cong Wang
Abstract:
The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional doping strategies due to composition limitations. The unique sluggish characteris…
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The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional doping strategies due to composition limitations. The unique sluggish characteristic in phase transition and extended optimization space in recent high entropy systems has great potential to broaden the temperature range in electronic transitions-induced NTE materials. Mn-based anti-perovskites offer an ideal platform for the exploration of high entropy NTE material due to their abundant element selection and controllable NTE performance. In this paper, the high entropy strategy is first introduced to broaden the NTE temperature range by relaxing the abrupt phase transition in Mn-based anti-perovskite nitride. We propose an empirical screening method to synthesize the high-entropy anti-perovskite (HEAP). it is found that magnetic phase separation from anti-ferromagnetic CII to paramagnetic CI surviving in an ultra-wide temperature range of 5K<=T<=350K (Delta_T=345K), revealing a unique sluggish characteristic. Consequently, a remarkable NTE behavior (up to Delta_T=235K, 5K<=T<=240K) with a coefficient of thermal expansion of -4.7x10-6/K, has been obtained in HEAP. It is worth noting that the temperature range is two/three times wider than that of low-entropy systems. The sluggish characteristic has been further experimentally proved to come from disturbed phase transition dynamics due to distortion in atomic spacing and chemical environmental fluctuation observed by the spherical aberration-corrected electron microscope. Our demonstration provides a unique paradigm for broadening the temperature range of NTE materials induced by phase transition through entropy engineering.
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Submitted 4 March, 2024; v1 submitted 31 May, 2023;
originally announced May 2023.
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Facet Dependent Topological Phase Transition in Bi4Br4
Authors:
Jingyuan Zhong,
Ming Yang,
Fei Ye,
Chen Liu,
Jiaou Wang,
Weichang Hao,
Jincheng Zhuang,
Yi Du
Abstract:
The realization of the coexistence of various topologically nontrivial surface states in one material is expected to lay a foundation for new electric applications with selective robust spin current. Here we apply the magnetoconductivity characteristic and angle-resolved photoemission spectroscopy (ARPES) to visualize the surface-selected electronic features evolution of quasi-one-dimensional mate…
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The realization of the coexistence of various topologically nontrivial surface states in one material is expected to lay a foundation for new electric applications with selective robust spin current. Here we apply the magnetoconductivity characteristic and angle-resolved photoemission spectroscopy (ARPES) to visualize the surface-selected electronic features evolution of quasi-one-dimensional material Bi4Br4. The transport measurements indicate the quantum interference correction to conductivity possesses symbolic spin rotational characteristic correlated to the value of Berry phase with the effects of weak localization and weak antilocalization for (001) and (100) surfaces, respectively. The ARPES spectra provide the experimental evidence for quasi-one-dimensional massless Dirac surface state at the side (100) surface and anisotropic massive Dirac surface state at the top (001) surface, respectively, which is highly coincide with the angle-dependent scaling behavior of magnetoconductivity. Our results reveal the facet dependent topological phases in quasi-one-dimensional Bi4Br4, stimulating the further investigations of this dual topology classes and the applications of the feasible technologies of topological spintronics.
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Submitted 22 November, 2021;
originally announced November 2021.
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Performance, Successes and Limitations of Deep Learning Semantic Segmentation of Multiple Defects in Transmission Electron Micrographs
Authors:
Ryan Jacobs,
Mingren Shen,
Yuhan Liu,
Wei Hao,
Xiaoshan Li,
Ruoyu He,
Jacob RC Greaves,
Donglin Wang,
Zeming Xie,
Zitong Huang,
Chao Wang,
Kevin G. Field,
Dane Morgan
Abstract:
In this work, we perform semantic segmentation of multiple defect types in electron microscopy images of irradiated FeCrAl alloys using a deep learning Mask Regional Convolutional Neural Network (Mask R-CNN) model. We conduct an in-depth analysis of key model performance statistics, with a focus on quantities such as predicted distributions of defect shapes, defect sizes, and defect areal densitie…
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In this work, we perform semantic segmentation of multiple defect types in electron microscopy images of irradiated FeCrAl alloys using a deep learning Mask Regional Convolutional Neural Network (Mask R-CNN) model. We conduct an in-depth analysis of key model performance statistics, with a focus on quantities such as predicted distributions of defect shapes, defect sizes, and defect areal densities relevant to informing modeling and understanding of irradiated Fe-based materials properties. To better understand the performance and present limitations of the model, we provide examples of useful evaluation tests which include a suite of random splits, and dataset size-dependent and domain-targeted cross validation tests. Overall, we find that the current model is a fast, effective tool for automatically characterizing and quantifying multiple defect types in microscopy images, with a level of accuracy on par with human domain expert labelers. More specifically, the model can achieve average defect identification F1 scores as high as 0.8, and, based on random cross validation, have low overall average (+/- standard deviation) defect size and density percentage errors of 7.3 (+/- 3.8)% and 12.7 (+/- 5.3)%, respectively. Further, our model predicts the expected material hardening to within 10-20 MPa (about 10% of total hardening), which is about the same error level as experiments. Our targeted evaluation tests also suggest the best path toward improving future models is not expanding existing databases with more labeled images but instead data additions that target weak points of the model domain, such as images from different microscopes, imaging conditions, irradiation environments, and alloy types. Finally, we discuss the first phase of an effort to provide an easy-to-use, open-source object detection tool to the broader community for identifying defects in new images.
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Submitted 15 October, 2021;
originally announced October 2021.
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Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4
Authors:
Ming Yang,
Yundan Liu,
Wei Zhou,
Chen Liu,
Dan Mu,
Yani Liu,
Jiaou Wang,
Weichang Hao,
Jin Li,
Jianxin Zhong,
Yi Du,
Jincheng Zhuang
Abstract:
Searching for new quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention due to the one-dimensional (1D) spin-momentum locked topological edge states serving as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. Here, we report th…
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Searching for new quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention due to the one-dimensional (1D) spin-momentum locked topological edge states serving as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. Here, we report the investigation of topological nature of monolayer Bi4Br4 by the techniques of scanning tunneling microscopy and angle-resolved photoemission spectroscopy (ARPES). The topological non-triviality of 1D edge state integrals within the large bulk energy gap (~ 0.2 eV) is revealed by the first-principle calculations. The ARPES measurements at different temperature show a temperature-induced Lifshitz transition, corresponding to the resistivity anomaly caused by the shift of chemical potential. The connection between the emergency of superconductivity and the Lifshitz transition is discussed.
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Submitted 13 October, 2021;
originally announced October 2021.
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Epitaxial growth of bilayer Bi(110) on two-dimensional ferromagnetic Fe3GeTe2
Authors:
Yilian Xi,
Mengting Zhao,
Haifeng Feng,
Ying Sun,
Xingkun Man,
Xun Xu,
Weichang Hao,
Shi Xue Dou,
Yi Du
Abstract:
Heterostructures of two-dimensional (2D) layered materials with selective compositions play an important role in creating novel functionalities. Effective interface coupling between 2D ferromagnet and electronic materials would enable the generation of exotic physical phenomena caused by intrinsic symmetry breaking and proximity effect at interfaces. Here, epitaxial growth of bilayer Bi(110) on 2D…
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Heterostructures of two-dimensional (2D) layered materials with selective compositions play an important role in creating novel functionalities. Effective interface coupling between 2D ferromagnet and electronic materials would enable the generation of exotic physical phenomena caused by intrinsic symmetry breaking and proximity effect at interfaces. Here, epitaxial growth of bilayer Bi(110) on 2D ferromagnetic Fe3GeTe2 (FGT) with large magnetic anisotropy has been reported. Bilayer Bi(110) islands are found to extend along fixed lattice directions of FGT. The six preferred orientations could be divided into two groups of three-fold symmetry axes with the difference approximately to 26°. Moreover, dI/dV measurements confirm the existence of interface coupling between bilayer Bi(110) and FGT. A variation of the energy gap at the edges of bilayer Bi(110) is also observed which is modulated by the interface coupling strengths associated with its buckled atomic structure. This system provides a good platform for further study of the exotic electronic properties of epitaxial Bi(110) on 2D ferromagnetic substrate and promotes potential applications in the field of spin devices.
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Submitted 18 October, 2021; v1 submitted 11 October, 2021;
originally announced October 2021.
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Two-dimensional ZIF-L nanosheets as high performance non-enzymatic glucose sensor
Authors:
Nana Liu,
Ningyan Cheng,
Chengwu Yang,
Weichang Hao,
Yi Du
Abstract:
An effective biosensor based on two-dimensional (2D) Co-ZIF-L nanosheets for sensitive electrochemical non-enzymatic glucose detection is developed, which exhibits high electrocalalytic activities towards glucose due to the ordered porous structure as well as ultrahigh specific surface area. The fabricated Co-ZIF-L nanosheets electrodes present an outstanding performance with higher sensitivity of…
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An effective biosensor based on two-dimensional (2D) Co-ZIF-L nanosheets for sensitive electrochemical non-enzymatic glucose detection is developed, which exhibits high electrocalalytic activities towards glucose due to the ordered porous structure as well as ultrahigh specific surface area. The fabricated Co-ZIF-L nanosheets electrodes present an outstanding performance with higher sensitivity of 769.5 *10$^{-6}$ A mM$^{-1}$ cm$^{-2}$ and lower detect limit of 90.4 nM, while the constructed 3D ZIF-67 nanoparticles electrodes show a weaker sensitivity of 697.4 *10$^{-6}$ A mM$^{-1}$ cm$^{-2}$ and a limited detection range from 2 *10$^{-6}$ M to 414 *10$^{-6}$ M. Furthermore, the Co-ZIF-L based non-enzymatic glucose biosensors possess an acceptable selectivity, long-term stability as well as reproducibility. This work may offer a new approach to develop 2D ZIF nanosheets as a potential candidate in electrochemical biosensors.
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Submitted 14 February, 2022; v1 submitted 9 October, 2021;
originally announced October 2021.
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Multi defect detection and analysis of electron microscopy images with deep learning
Authors:
Mingren Shen,
Guanzhao Li,
Dongxia Wu,
Yuhan Liu,
Jacob Greaves,
Wei Hao,
Nathaniel J. Krakauer,
Leah Krudy,
Jacob Perez,
Varun Sreenivasan,
Bryan Sanchez,
Oigimer Torres,
Wei Li,
Kevin Field,
Dane Morgan
Abstract:
Electron microscopy is widely used to explore defects in crystal structures, but human detecting of defects is often time-consuming, error-prone, and unreliable, and is not scalable to large numbers of images or real-time analysis. In this work, we discuss the application of machine learning approaches to find the location and geometry of different defect clusters in irradiated steels. We show tha…
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Electron microscopy is widely used to explore defects in crystal structures, but human detecting of defects is often time-consuming, error-prone, and unreliable, and is not scalable to large numbers of images or real-time analysis. In this work, we discuss the application of machine learning approaches to find the location and geometry of different defect clusters in irradiated steels. We show that a deep learning based Faster R-CNN analysis system has a performance comparable to human analysis with relatively small training data sets. This study proves the promising ability to apply deep learning to assist the development of automated microscopy data analysis even when multiple features are present and paves the way for fast, scalable, and reliable analysis systems for massive amounts of modern electron microscopy data.
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Submitted 19 August, 2021;
originally announced August 2021.
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A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
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Superconductivity in Layered van der Waals Hydrogenated Germanene at High Pressure
Authors:
Yilian Xi,
Xiaoling Jing,
Zhongfei Xu,
Nana Liu,
Yani Liu,
Miao-Ling Lin,
Ming Yang,
Ying Sun,
Jincheng Zhuang,
Xun Xu,
Weichang Hao,
Yanchun Li,
Xiaodong Li,
Ping-Heng Tan,
Quanjun Li,
Bingbing Liu,
Shi Xue Dou,
Yi Du
Abstract:
Structural and superconducting transitions of layered van der Waals (vdW) hydrogenated germanene (GeH) were observed under high-pressure compression and decompression processes. GeH possesses a superconducting transition at critical temperature (Tc) of 5.41 K at 8.39 GPa. A crystalline to amorphous transition occurs at 16.80 GPa while superconductivity remains. An abnormally increased Tc up to 6.1…
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Structural and superconducting transitions of layered van der Waals (vdW) hydrogenated germanene (GeH) were observed under high-pressure compression and decompression processes. GeH possesses a superconducting transition at critical temperature (Tc) of 5.41 K at 8.39 GPa. A crystalline to amorphous transition occurs at 16.80 GPa while superconductivity remains. An abnormally increased Tc up to 6.1 K has been observed in the decompression process while the GeH remained amorphous. Thorough in-situ high-pressure synchrotron X-ray diffraction and in-situ high-pressure Raman spectroscopy with the density functional theory simulations suggest that the superconductivity of GeH should be attributed to the increased density of states at the Fermi level as well as the enhanced electron-phonon coupling effect under high pressure. The decompression-driven superconductivity enhancement arises from pressure-induced phonon softening related to an in-plane Ge-Ge phonon mode. As an amorphous metal hydride superconductor, GeH provides a platform to study amorphous hydride superconductivity in layered vdW materials.
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Submitted 3 June, 2021; v1 submitted 9 May, 2021;
originally announced May 2021.
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Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States
Authors:
Jincheng Zhuang,
Jin Li,
Yundan Liu,
Dan Mu,
Ming Yang,
Yani Liu,
Wei Zhou,
Weichang Hao,
Jianxin Zhong,
Yi Du
Abstract:
Quantum spin Hall insulators have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, the clean and atomically sharp ES serving as ideal 1D conducting channels are still lack. Here, we report the formation…
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Quantum spin Hall insulators have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, the clean and atomically sharp ES serving as ideal 1D conducting channels are still lack. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observations of the topological ES at the step edge by scanning tunneling microscopy and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits remarkable robustness against non time reversal symmetry perturbations. The theoretical simulations verify the topological non-trivial character of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, paving the way to engineer the novel topological features by using the nanoribbons as the 1D building block.
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Submitted 12 March, 2021;
originally announced March 2021.
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Optimization of Quantum-dot Qubit Fabrication via Machine Learning
Authors:
Antonio B. Mei,
Ivan Milosavljevic,
Amanda L. Simpson,
Valerie A. Smetanka,
Colin P. Feeney,
Shay M. Seguin,
Sieu D. Ha,
Wonill Ha,
Matthew D. Reed
Abstract:
Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process w…
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Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for developing robust processes, shortening development cycles, and enforcing quality control during qubit fabrication.
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Submitted 15 December, 2020;
originally announced December 2020.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Kondo holes in the 2D itinerant Ising ferromagnet Fe3GeTe2
Authors:
Mengting Zhao,
Binbin Chen,
Yilian Xi,
Yanyan Zhao,
Hongrun Zhang,
Haifeng Feng,
Jincheng Zhuang,
Xun Xu,
Weichang Hao,
Wei Li,
Si Zhou,
Shi Xue Dou,
Yi Du
Abstract:
Heavy fermion (HF) states emerge in correlated quantum materials due to the interplay between localized magnetic moments and itinerant electrons, but rarely appear in 3d-electron systems due to high itinerancy of d-electrons. Here, an anomalous enhancement of Kondo screening is observed at the Kondo hole of local Fe vacancies in Fe3GeTe2 which is a recently discovered 3d-HF system featuring of Kon…
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Heavy fermion (HF) states emerge in correlated quantum materials due to the interplay between localized magnetic moments and itinerant electrons, but rarely appear in 3d-electron systems due to high itinerancy of d-electrons. Here, an anomalous enhancement of Kondo screening is observed at the Kondo hole of local Fe vacancies in Fe3GeTe2 which is a recently discovered 3d-HF system featuring of Kondo lattice and two-dimensional itinerant ferromagnetism. An itinerant Kondo-Ising model is established to reproduce the experimental results which provides insight of the competition between Ising ferromagnetism and Kondo screening. This work explains the microscopic origin of the d-electron HF states and inspires study of the enriched quantum many-body phenomena with Kondo holes in Ising ferromagnets.
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Submitted 31 August, 2020; v1 submitted 25 August, 2020;
originally announced August 2020.
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Knot theory for two-band model of two-dimensional square lattice with high topological numbers
Authors:
Xin Liu,
Zhiwen Chang,
Weichang Hao
Abstract:
A knot theory for two-dimensional square lattice is proposed, which sheds light on design of new two-dimensional material with high topological numbers. We consider a two-band model, focusing on the Hall conductance σxy = e^2/hbar*P, where P is a topological number, the so-called Pontrjagin index. By re-interpreting the periodic momentum components kx and ky as the string parameters of two entangl…
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A knot theory for two-dimensional square lattice is proposed, which sheds light on design of new two-dimensional material with high topological numbers. We consider a two-band model, focusing on the Hall conductance σxy = e^2/hbar*P, where P is a topological number, the so-called Pontrjagin index. By re-interpreting the periodic momentum components kx and ky as the string parameters of two entangled knots, we discover that P becomes the Gauss linking number between the knots. This leads to a successful re-derivation of the typical P-evaluations in literature: P = 0;{\pm}1. Furthermore, with the aid of this explicit knot theoretical picture we modify the two-band model to achieve higher topological numbers, P = 0;{\pm}1;{\pm}2.
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Submitted 23 June, 2020;
originally announced June 2020.
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Topological Lattice Metamaterials -- A Platform For Novel Electromagnetic Material Design Based On An Artificial Topological "Atom"
Authors:
Wenjin Zhang,
Ziyuan Meng,
Zidong Zhang,
Ke Bi,
Runhua Fan,
Yi Du,
Weichang Hao
Abstract:
In nature, most materials are composed of atoms with periodic structures. Hence, it's impossible to introduce topological structures into their lattice compose, because the atoms as basic blocks cannot be modulated. However, the lattice compose of metamaterials can be designed conveniently. In our work, we propose to introduce topological non-trivial structures, Mobius unknots, as the basic block…
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In nature, most materials are composed of atoms with periodic structures. Hence, it's impossible to introduce topological structures into their lattice compose, because the atoms as basic blocks cannot be modulated. However, the lattice compose of metamaterials can be designed conveniently. In our work, we propose to introduce topological non-trivial structures, Mobius unknots, as the basic block (the artificial chiral "atoms") to design metamaterials. A 5.95 GHz intrinsic peak, in addition to the electrical resonance peak near 11 GHz on the transmission coefficient spectrum was confirmed by theoretical calculations, finite-difference time-domain (FDTD) simulations and experiments when electromagnetic waves transfer to a chiral Mobius unknot. Theoretical analysis indicates that this intrinsic peak originates from the phase transition caused by the electromagnetic waves propagate along the Mobius unknot non-trivial structure. It is similar to the state of spin-splitting of electron levels. Take the artificial chiral "atoms" - Mobius unknots as the basic block, we can construct two-dimensional and even three-dimensional ordered metamaterials. The simulation and experimental results showed that the response to electromagnetic wave in the GHz band can be modulated by the coupling between the periodic potential and the spin-like of energy levels.
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Submitted 4 October, 2020; v1 submitted 12 December, 2019;
originally announced December 2019.
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Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy
Authors:
Zhi Li,
Haifeng Feng,
Jincheng Zhuang,
Na Pu,
Li Wang,
Xun Xu,
Weichang Hao,
Yi Du
Abstract:
Ag atoms have been deposited on 3x3 silicene and R3xR3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3x3 silicene and R3xR3 silicene films,which is due to chemically inert surface of silicene. On 3x3 silicene films, Ag atoms mostly form into stable flat top…
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Ag atoms have been deposited on 3x3 silicene and R3xR3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3x3 silicene and R3xR3 silicene films,which is due to chemically inert surface of silicene. On 3x3 silicene films, Ag atoms mostly form into stable flat top Ag islands. In contrast, Ag atoms form nanoclusters and glide on silicene films, suggesting more inert nature. Raman spectroscopy suggests that there is more sp2 hybridization in R3xR3 than in R7xR7/3x3silicene films
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Submitted 8 July, 2015;
originally announced July 2015.
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Counting solutions of the Bethe equations of the quantum group invariant open XXZ chain at roots of unity
Authors:
Azat M. Gainutdinov,
Wenrui Hao,
Rafael I. Nepomechie,
Andrew J. Sommese
Abstract:
We consider the sl(2)_q-invariant open spin-1/2 XXZ quantum spin chain of finite length N. For the case that q is a root of unity, we propose a formula for the number of admissible solutions of the Bethe ansatz equations in terms of dimensions of irreducible representations of the Temperley-Lieb algebra; and a formula for the degeneracies of the transfer matrix eigenvalues in terms of dimensions o…
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We consider the sl(2)_q-invariant open spin-1/2 XXZ quantum spin chain of finite length N. For the case that q is a root of unity, we propose a formula for the number of admissible solutions of the Bethe ansatz equations in terms of dimensions of irreducible representations of the Temperley-Lieb algebra; and a formula for the degeneracies of the transfer matrix eigenvalues in terms of dimensions of tilting sl(2)_q-modules. These formulas include corrections that appear if two or more tilting modules are spectrum-degenerate. For the XX case (q=exp(i pi/2)), we give explicit formulas for the number of admissible solutions and degeneracies. We also consider the cases of generic q and the isotropic (q->1) limit. Numerical solutions of the Bethe equations up to N=8 are presented. Our results are consistent with the Bethe ansatz solution being complete.
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Submitted 9 July, 2015; v1 submitted 8 May, 2015;
originally announced May 2015.
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Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy
Authors:
Jincheng Zhuang,
Xun Xu,
Yi Du,
Kehui Wu,
Lan Chen,
Weichang Hao,
Jiaou Wang,
Wai Kong Yeoh,
Xiaolin Wang,
Shi Xue Dou
Abstract:
In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from th…
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In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.
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Submitted 16 February, 2015;
originally announced February 2015.
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On the completeness of solutions of Bethe's equations
Authors:
Wenrui Hao,
Rafael I. Nepomechie,
Andrew J. Sommese
Abstract:
We consider the Bethe equations for the isotropic spin-1/2 Heisenberg quantum spin chain with periodic boundary conditions. We formulate a conjecture for the number of solutions with pairwise distinct roots of these equations, in terms of numbers of so-called singular (or exceptional) solutions. Using homotopy continuation methods, we find all such solutions of the Bethe equations for chains of le…
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We consider the Bethe equations for the isotropic spin-1/2 Heisenberg quantum spin chain with periodic boundary conditions. We formulate a conjecture for the number of solutions with pairwise distinct roots of these equations, in terms of numbers of so-called singular (or exceptional) solutions. Using homotopy continuation methods, we find all such solutions of the Bethe equations for chains of length up to 14. The numbers of these solutions are in perfect agreement with the conjecture. We also discuss an indirect method of finding solutions of the Bethe equations by solving the Baxter T-Q equation. We briefly comment on implications for thermodynamical computations based on the string hypothesis.
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Submitted 28 August, 2013; v1 submitted 21 August, 2013;
originally announced August 2013.
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Impeding effect of cerium on the growth of helium bubble in iron
Authors:
W. Hao,
W. T. Geng
Abstract:
Our first-principles density functional theory calculations suggest that the rare earth element, Ce, has a stronger attraction (-1.31eV) to He than He-He (-1.18eV) in bcc Fe. Consequently, the mobile He atoms could be pinned to Ce, and hence a reduced merging of He clusters. Moreover, we find that the segregated Ce layer at the He bubble surface presents an energy barrier of 0.33 eV to the upcomin…
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Our first-principles density functional theory calculations suggest that the rare earth element, Ce, has a stronger attraction (-1.31eV) to He than He-He (-1.18eV) in bcc Fe. Consequently, the mobile He atoms could be pinned to Ce, and hence a reduced merging of He clusters. Moreover, we find that the segregated Ce layer at the He bubble surface presents an energy barrier of 0.33 eV to the upcoming He atom and thus slows down the bubble growth.
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Submitted 2 May, 2011;
originally announced May 2011.
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Gold slows down the growth of helium bubble in iron
Authors:
W. Hao,
W. T. Geng
Abstract:
We predict by first-principles calculations that Au have strong affinity to He in bcc Fe. The Au-Au bonding in the segregated Au layer at the He bubble surface is stronger than Fe-Fe and Au-Fe interactions; therefore this layer becomes an effective barrier to further He and slows down the bubble growth.
We predict by first-principles calculations that Au have strong affinity to He in bcc Fe. The Au-Au bonding in the segregated Au layer at the He bubble surface is stronger than Fe-Fe and Au-Fe interactions; therefore this layer becomes an effective barrier to further He and slows down the bubble growth.
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Submitted 1 February, 2011;
originally announced February 2011.
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Single-filament Composite MgB2/SUS Ribbons by Powder-In-Tube Process
Authors:
K. J. Song,
N. J. Lee,
H. M. Jang,
H. S. Ha,
D. W. Ha,
S. S. OH,
M. H. Sohn,
Y. K. Kwon,
K. S. Ryu
Abstract:
We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K w…
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We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K were observed at self-field, for the non-sintered composite MgB2/SUS ribbon. In addition, the persistent current density Jp values, that were estimated by Bean formula, were more than ~ 7  105 A/cm2 at T = 5 K, and ~ 1.2  105 A/cm2 at T = 30 K, for the sintered composite MgB2/SUS ribbon, at H = 0 G.
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Submitted 6 June, 2001;
originally announced June 2001.
