Showing 1–45 of 45 results for author: Hao, S

Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy

Authors: Se H. Kim, Hanjoo Lee, Dong Gwan Kim, Donghan Kim, Seugki Kim, Hyunho Yang, Yunsu Jang, Jangho Yoon, Hyunsoo Kim, Seoyong Ha, ByoungTak Lee, Jung-Hee Lee, Roy Byung Kyu Chung, Hongsik Park, Sungkyu Kim, Tae Hoon Lee, Hyun S. Kum

Abstract: Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality free-standing films from a single mother wafer. Successful implementation of these epitaxial techniques depends on creating a robust, uniform two-dimensional (2D) material… ▽ More Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality free-standing films from a single mother wafer. Successful implementation of these epitaxial techniques depends on creating a robust, uniform two-dimensional (2D) material surface. The conventional method for fabricating graphene on silicon carbide (SiC) is high-temperature graphitization. However, the extremely high temperature required for silicon sublimation (typically above 1500 °C) causes step-bunching of the SiC surface, forming non-uniform multilayer graphene stripes and an unfavorable surface morphology for epitaxial growth. Here, we developed a wafer-scale graphitization technique that allows fast synthesis of single-crystalline graphene at ultra-low temperatures by metal-assisted graphitization (MAG). We found annealing conditions that enable SiC dissociation while avoiding silicide formation, producing uniform single-crystalline graphene while maintaining the surface morphology of the substrate. The graphene thickness can be controlled by varying the metal thickness or annealing temperature, enabling remote epitaxy or vdWE. We successfully produced freestanding single-crystalline III-N (AlN, GaN) films on graphene/SiC via the 2D material-based layer transfer technique. Our results show that low-temperature graphene synthesis via MAG offers a promising route to producing large-scale ultra-wide bandgap free-standing crystalline membranes. △ Less

Submitted 20 May, 2025; v1 submitted 24 February, 2025; originally announced February 2025.

Hybridization of Non-Hermitian Topological Interface Modes

Authors: Yuhao Wang, Hai-Chau Nguyen, Zhiyi Yuan, T. Thu Ha Do, Vytautas Valuckas, Hai Son Nguyen, Cuong Dang, Son Tung Ha

Abstract: We propose and experimentally demonstrate the hybridization of radiating topological interface states, analogous to Jackiw-Rebbi states but in gain media with radiation fields. This hybridization not only modifies energy levels under a strong coupling scheme but also significantly reshapes far-field radiation characteristics. The bonding mode exhibits sub-radiant, omnidirectional emission, while t… ▽ More We propose and experimentally demonstrate the hybridization of radiating topological interface states, analogous to Jackiw-Rebbi states but in gain media with radiation fields. This hybridization not only modifies energy levels under a strong coupling scheme but also significantly reshapes far-field radiation characteristics. The bonding mode exhibits sub-radiant, omnidirectional emission, while the antibonding mode becomes super-radiant and highly unidirectional. Crucially, this non-Hermitian hybridization is tunable, allowing simultaneous control of energy splitting, quality factor, and far-field radiation by varying the distance between the two topological interfaces. Our findings establish hybridized radiating topological interface states as a robust platform for engineering two-level systems with tailored far-field responses, offering new possibilities for applications in beam shaping, nonlinear optics, quantum technologies, and beyond. △ Less

Submitted 24 February, 2025; originally announced February 2025.

Two-dimensional Si spin qubit arrays with multilevel interconnects

Authors: Sieu D. Ha, Edwin Acuna, Kate Raach, Zachery T. Bloom, Teresa L. Brecht, James M. Chappell, Maxwell D. Choi, Justin E. Christensen, Ian T. Counts, Dominic Daprano, J. P. Dodson, Kevin Eng, David J. Fialkow, Christina A. C. Garcia, Wonill Ha, Thomas R. B. Harris, nathan holman, Isaac Khalaf, Justine W. Matten, Christi A. Peterson, Clifford E. Plesha, Matthew J. Ruiz, Aaron Smith, Bryan J. Thomas, Samuel J. Whiteley , et al. (4 additional authors not shown)

Abstract: The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semi… ▽ More The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies. △ Less

Submitted 12 February, 2025; originally announced February 2025.

Low temperature state in strontium titanate microcrystals using in situ multi-reflection Bragg coherent X-ray diffraction imaging

Authors: David Yang, Ana F. Suzana, Longlong Wu, Sung Soo Ha, Sungwook Choi, Hieu Minh Ngo, Muhammad Mahmood Nawaz, Hyunjung Kim, Jialun Liu, Daniel Treuherz, Nan Zhang, Zheyi An, Gareth Nisbet, Daniel G. Porter, Ian K. Robinson

Abstract: Strontium titanate is a classic quantum paraelectric oxide material that has been widely studied in bulk and thin films. It exhibits a well-known cubic-to-tetragonal antiferrodistortive phase transition at 105 K, characterized by the rotation of oxygen octahedra. A possible second phase transition at lower temperature is suppressed by quantum fluctuations, preventing the onset of ferroelectric ord… ▽ More Strontium titanate is a classic quantum paraelectric oxide material that has been widely studied in bulk and thin films. It exhibits a well-known cubic-to-tetragonal antiferrodistortive phase transition at 105 K, characterized by the rotation of oxygen octahedra. A possible second phase transition at lower temperature is suppressed by quantum fluctuations, preventing the onset of ferroelectric order. However, recent studies have shown that ferroelectric order can be established at low temperatures by inducing strain and other means. Here, we used in situ multi-reflection Bragg coherent x-ray diffraction imaging to measure the strain and rotation tensors for two strontium titanate microcrystals at low temperature. We observe strains induced by dislocations and inclusion-like impurities in the microcrystals. Based on radial magnitude plots, these strains increase in magnitude and spread as the temperature decreases. Pearson's correlation heat maps show a structural transition at 50 K, which could possibly be the formation of a low-temperature ferroelectric phase in the presence of strain. We do not observe any change in local strains associated with the tetragonal phase transition at 105 K. △ Less

Submitted 24 January, 2025; v1 submitted 11 September, 2024; originally announced September 2024.

Comments: 15 pages, 20 figures

Journal ref: Physical Review B, 111(2), 024107 (2025)

Inferring the Langevin Equation with Uncertainty via Bayesian Neural Networks

Authors: Youngkyoung Bae, Seungwoong Ha, Hawoong Jeong

Abstract: Pervasive across diverse domains, stochastic systems exhibit fluctuations in processes ranging from molecular dynamics to climate phenomena. The Langevin equation has served as a common mathematical model for studying such systems, enabling predictions of their temporal evolution and analyses of thermodynamic quantities, including absorbed heat, work done on the system, and entropy production. How… ▽ More Pervasive across diverse domains, stochastic systems exhibit fluctuations in processes ranging from molecular dynamics to climate phenomena. The Langevin equation has served as a common mathematical model for studying such systems, enabling predictions of their temporal evolution and analyses of thermodynamic quantities, including absorbed heat, work done on the system, and entropy production. However, inferring the Langevin equation from observed trajectories is a challenging problem, and assessing the uncertainty associated with the inferred equation has yet to be accomplished. In this study, we present a comprehensive framework that employs Bayesian neural networks for inferring Langevin equations in both overdamped and underdamped regimes. Our framework first provides the drift force and diffusion matrix separately and then combines them to construct the Langevin equation. By providing a distribution of predictions instead of a single value, our approach allows us to assess prediction uncertainties, which can help prevent potential misunderstandings and erroneous decisions about the system. We demonstrate the effectiveness of our framework in inferring Langevin equations for various scenarios including a neuron model and microscopic engine, highlighting its versatility and potential impact. △ Less

Submitted 30 April, 2025; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 34 pages, 17 figures

Journal ref: Chaos, Solitons & Fractals 197 (2025) 116440

Origin of chirality in transition-metal dichalcogenides

Authors: Kwangrae Kim, Hyun-Woo J. Kim, Seunghyeok Ha, Hoon Kim, Jin-Kwang Kim, Jaehwon Kim, Hyunsung Kim, Junyoung Kwon, Jihoon Seol, Saegyeol Jung, Changyoung Kim, Ahmet Alatas, Ayman Said, Michael Merz, Matthieu Le Tacon, Jin Mo Bok, Ki-Seok Kim, B. J. Kim

Abstract: Chirality is a ubiquitous phenomenon in which a symmetry between left- and right-handed objects is broken, examples in nature ranging from subatomic particles and molecules to living organisms. In particle physics, the weak force is responsible for the symmetry breaking and parity violation in beta decay, but in condensed matter systems interactions that lead to chirality remain poorly understood.… ▽ More Chirality is a ubiquitous phenomenon in which a symmetry between left- and right-handed objects is broken, examples in nature ranging from subatomic particles and molecules to living organisms. In particle physics, the weak force is responsible for the symmetry breaking and parity violation in beta decay, but in condensed matter systems interactions that lead to chirality remain poorly understood. Here, we unravel the mechanism of chiral charge density wave formation in the transition-metal dichalcogenide 1T-TiSe2. Using representation analysis, we show that charge density modulations and ionic displacements, which transform as a continuous scalar field and a vector field on a discrete lattice, respectively, follow different irreducible representations of the space group, despite the fact that they propagate with the same wave-vectors and are strongly coupled to each other. This charge-lattice symmetry frustration is resolved by further breaking of all symmetries not common to both sectors through induced lattice distortions, thus leading to chirality. Our theory is verified using Raman spectroscopy and inelastic x-ray scattering, which reveal that all but translation symmetries are broken at a level not resolved by state-of-the-art diffraction techniques. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Comments: 10 pages, 3 figures, 1 table

Quantum spin nematic phase in a square-lattice iridate

Authors: Hoon Kim, Jin-Kwang Kim, Jimin Kim, Hyun-Woo J. Kim, Seunghyeok Ha, Kwangrae Kim, Wonjun Lee, Jonghwan Kim, Gil Young Cho, Hyeokjun Heo, Joonho Jang, J. Strempfer, G. Fabbris, Y. Choi, D. Haskel, Jungho Kim, J. -W. Kim, B. J. Kim

Abstract: Spin nematic (SN) is a magnetic analog of classical liquid crystals, a fourth state of matter exhibiting characteristics of both liquid and solid. Particularly intriguing is a valence-bond SN, in which spins are quantum entangled to form a multi-polar order without breaking time-reversal symmetry, but its unambiguous experimental realization remains elusive. Here, we establish a SN phase in the sq… ▽ More Spin nematic (SN) is a magnetic analog of classical liquid crystals, a fourth state of matter exhibiting characteristics of both liquid and solid. Particularly intriguing is a valence-bond SN, in which spins are quantum entangled to form a multi-polar order without breaking time-reversal symmetry, but its unambiguous experimental realization remains elusive. Here, we establish a SN phase in the square-lattice iridate Sr$_2$IrO$_4$, which approximately realizes a pseudospin one-half Heisenberg antiferromagnet (AF) in the strong spin-orbit coupling limit. Upon cooling, the transition into the SN phase at T$_C$ $\approx$ 263 K is marked by a divergence in the static spin quadrupole susceptibility extracted from our Raman spectra, and concomitant emergence of a collective mode associated with the spontaneous breaking of rotational symmetries. The quadrupolar order persists in the antiferromagnetic (AF) phase below T$_N$ $\approx$ 230 K, and becomes directly observable through its interference with the AF order in resonant x-ray diffraction, which allows us to uniquely determine its spatial structure. Further, we find using resonant inelastic x-ray scattering a complete breakdown of coherent magnon excitations at short-wavelength scales, suggesting a resonating-valence-bond-like quantum entanglement in the AF state. Taken together, our results reveal a quantum order underlying the Néel AF that is widely believed to be intimately connected to the mechanism of high temperature superconductivity (HTSC). △ Less

Submitted 14 December, 2023; v1 submitted 2 October, 2023; originally announced October 2023.

Comments: Published in https://www.nature.com/articles/s41586-023-06829-4

Multi-Task Mixture Density Graph Neural Networks for Predicting Cu-based Single-Atom Alloy Catalysts for CO2 Reduction Reaction

Authors: Chen Liang, Bowen Wang, Shaogang Hao, Guangyong Chen, Pheng-Ann Heng, Xiaolong Zou

Abstract: Graph neural networks (GNNs) have drawn more and more attention from material scientists and demonstrated a high capacity to establish connections between the structure and properties. However, with only unrelaxed structures provided as input, few GNN models can predict the thermodynamic properties of relaxed configurations with an acceptable level of error. In this work, we develop a multi-task (… ▽ More Graph neural networks (GNNs) have drawn more and more attention from material scientists and demonstrated a high capacity to establish connections between the structure and properties. However, with only unrelaxed structures provided as input, few GNN models can predict the thermodynamic properties of relaxed configurations with an acceptable level of error. In this work, we develop a multi-task (MT) architecture based on DimeNet++ and mixture density networks to improve the performance of such task. Taking CO adsorption on Cu-based single-atom alloy catalysts as an illustration, we show that our method can reliably estimate CO adsorption energy with a mean absolute error of 0.087 eV from the initial CO adsorption structures without costly first-principles calculations. Further, compared to other state-of-the-art GNN methods, our model exhibits improved generalization ability when predicting catalytic performance of out-of-domain configurations, built with either unseen substrate surfaces or doping species. We show that the proposed MT GNN strategy can facilitate catalyst discovery. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: 22 pages, 3 figures, 2 tables

Universal logic with encoded spin qubits in silicon

Authors: Aaron J. Weinstein, Matthew D. Reed, Aaron M. Jones, Reed W. Andrews, David Barnes, Jacob Z. Blumoff, Larken E. Euliss, Kevin Eng, Bryan Fong, Sieu D. Ha, Daniel R. Hulbert, Clayton Jackson, Michael Jura, Tyler E. Keating, Joseph Kerckhoff, Andrey A. Kiselev, Justine Matten, Golam Sabbir, Aaron Smith, Jeffrey Wright, Matthew T. Rakher, Thaddeus D. Ladd, Matthew G. Borselli

Abstract: Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-… ▽ More Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Evolution from helical to collinear ferromagnetic order of the Eu$^{2+}$ spins in RbEu(Fe$_{1-x}$Ni$_{x}$)$_{4}$As$_{4}$

Authors: Qianhui Xu, Yi Liu, Sijie Hao, Jiahui Qian, Cheng Su, Chin-Wei Wang, Thomas Hansen, Zhendong Fu, Yixi Su, Wei Li, Guang-Han Cao, Yinguo Xiao, Wentao Jin

Abstract: The ground-state magnetic structures of the Eu$^{2+}$ spins in recently discovered RbEu(Fe$_{1-x}$Ni$_{x}$)$_{4}$As$_{4}$ superconductors have been investigated by neutron powder diffraction measurements. It is found that as the superconductivity gets suppressed with the increase of Ni doping, the magnetic propagation vector of the Eu sublattice diminishes, corresponding to the decrease of the rot… ▽ More The ground-state magnetic structures of the Eu$^{2+}$ spins in recently discovered RbEu(Fe$_{1-x}$Ni$_{x}$)$_{4}$As$_{4}$ superconductors have been investigated by neutron powder diffraction measurements. It is found that as the superconductivity gets suppressed with the increase of Ni doping, the magnetic propagation vector of the Eu sublattice diminishes, corresponding to the decrease of the rotation angle between the moments in neighboring Eu layers. The ferromagnetic Eu layers are helically modulated along the $\mathit{c}$ axis with an incommensurate magnetic propagation vector in both the ferromagnetic superconductor RbEu(Fe$_{0.95}$Ni$_{0.05}$)$_{4}$As$_{4}$ and the superconducting ferromagnet RbEu(Fe$_{0.93}$Ni$_{0.07}$)$_{4}$As$_{4}$. Such a helical structure transforms into a purely collinear ferromagnetic structure for non-superconducting RbEu(Fe$_{0.91}$Ni$_{0.09}$)$_{4}$As$_{4}$, with all the Eu$^{2+}$ spins lying along the tetragonal (1 1 0) direction. The evolution from helical to collinear ferromagnetic order of the Eu$^{2+}$ spins with increasing Ni doping is supported by first-principles calculations. The variation of the rotation angle between adjacent Eu$^{2+}$ layers can be well explained by considering the change of magnetic exchange couplings mediated by the indirect Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. △ Less

Submitted 16 January, 2022; originally announced January 2022.

Comments: 9 pages, 6 figures, accepted for publication in Physical Review Research

Journal ref: Phys. Rev. Research 4, 013077 (2022)

Heterogeneous relational message passing networks for molecular dynamics simulations

Authors: Zun Wang, Chong Wang, Sibo Zhao, Yong Xu, Shaogang Hao, Chang Yu Hsieh, Bing-Lin Gu, Wenhui Duan

Abstract: With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecula… ▽ More With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecular systems in terms of homogeneous graph, which severely limits the expressive power for representing diverse interactions. In practice, graph data with multiple node and edge types is ubiquitous and more appropriate for molecular systems. Thus, we propose the heterogeneous relational message passing network (HermNet), an end-to-end heterogeneous graph neural networks, to efficiently express multiple interactions in a single model with {\it ab initio} accuracy. HermNet performs impressively against many top-performing models on both molecular and extended systems. Specifically, HermNet outperforms other tested models in nearly 75\%, 83\% and 94\% of tasks on MD17, QM9 and extended systems datasets, respectively. Finally, we elucidate how the design of HermNet is compatible with quantum mechanics from the perspective of the density functional theory. Besides, HermNet is a universal framework, whose sub-networks could be replaced by other advanced models. △ Less

Submitted 2 September, 2021; originally announced September 2021.

A flexible design platform for Si/SiGe exchange-only qubits with low disorder

Authors: Wonill Ha, Sieu D. Ha, Maxwell D. Choi, Yan Tang, Adele E. Schmitz, Mark P. Levendorf, Kangmu Lee, James M. Chappell, Tower S. Adams, Daniel R. Hulbert, Edwin Acuna, Ramsey S. Noah, Justine W. Matten, Michael P. Jura, Jeffrey A. Wright, Matthew T. Rakher, Matthew G. Borselli

Abstract: Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar… ▽ More Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Authors: Xiaowei Liu, Yaojia Wang, Qiqi Guo, Shijun Liang, Tao Xu, Bo Liu, Jiabin Qiao, Shengqiang Lai, Junwen Zeng, Song Hao, Chenyi Gu, Tianjun Cao, Chenyu Wang, Yu Wang, Chen Pan, Guangxu Su, Yuefeng Nie, Xiangang Wan, Litao Sun, Zhenlin Wang, Lin He, Bin Cheng, Feng Miao

Abstract: Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco… ▽ More Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: 24 pages, 12 figures, accepted by Physical Review Materials

Gate-Tunable Optical Extinction of Graphene Nanoribbon Nanoclusters

Authors: Erin Sheridan, Gang Li, Mamun Sarker, Shan Hao, Ki-Tae Eom, Chang-Beom Eom, Alexander Sinitskii, Patrick Irvin, Jeremy Levy

Abstract: We investigate the optical response of graphene nanoribbons (GNRs) using the broadband nonlinear generation and detection capabilities of nanoscale junctions created at the LaAlO$_3$/SrTiO$_3$ interface. GNR nanoclusters measured to be as small as 1-2 GNRs in size are deposited on the LaAlO$_3$ surface with an atomic force microscope tip. Time-resolved nonlinear optical probes of GNR nanoclusters… ▽ More We investigate the optical response of graphene nanoribbons (GNRs) using the broadband nonlinear generation and detection capabilities of nanoscale junctions created at the LaAlO$_3$/SrTiO$_3$ interface. GNR nanoclusters measured to be as small as 1-2 GNRs in size are deposited on the LaAlO$_3$ surface with an atomic force microscope tip. Time-resolved nonlinear optical probes of GNR nanoclusters reveal a strong, gate-tunable second and third harmonic response, as well as strong extinction of visible to near-infrared (VIS-NIR) light at distinct wavelengths, similar to previous reports with graphene. △ Less

Submitted 12 March, 2021; originally announced March 2021.

Comments: 17 pages, 5 figures

Optimization of Quantum-dot Qubit Fabrication via Machine Learning

Authors: Antonio B. Mei, Ivan Milosavljevic, Amanda L. Simpson, Valerie A. Smetanka, Colin P. Feeney, Shay M. Seguin, Sieu D. Ha, Wonill Ha, Matthew D. Reed

Abstract: Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process w… ▽ More Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for developing robust processes, shortening development cycles, and enforcing quality control during qubit fabrication. △ Less

Submitted 15 December, 2020; originally announced December 2020.

Journal ref: Appl. Phys. Lett. 118, 204001 (2021)

Anisotropic layer-by-layer carbon nanotubes/boron nitride/rubber composite and its application in electromagnetic shielding

Authors: Yanhu Zhan, Emanuele Lago, Chiara Santillo, Antonio Esau Del Rio Castillo, Shuai Hao, Giovanna G. Buonocore, Zhenming Chen, Hesheng Xia, Marino Lavorgna, Francesco Bonaccorso

Abstract: Multifunctional polymer composites with anisotropic properties are attracting interests as they fulfil the growing demand of multitasking materials. In this work, anisotropic polymer composites are fabricated by combining the layer-by-layer (LBL) filtration method with the alternative assembling of carbon nanotubes (CNTs) and hexagonal boron nitride flakes (hBN) on natural rubber latex particles (… ▽ More Multifunctional polymer composites with anisotropic properties are attracting interests as they fulfil the growing demand of multitasking materials. In this work, anisotropic polymer composites are fabricated by combining the layer-by-layer (LBL) filtration method with the alternative assembling of carbon nanotubes (CNTs) and hexagonal boron nitride flakes (hBN) on natural rubber latex particles (NR). The layered composites exhibit anisotropic thermal and electrical conductivities, which are tailored through the layer formulations. The best composite consists of four layers of NR modified with 8 phr (parts per Hundred Rubber) CNTs (~7.4 wt%) and four alternated layers with 12 phr hBN (~10.7 wt%). The composites exhibit an electromagnetic interference (EMI) shielding effectiveness of 22.41+-0.14 dB mm-1 at 10.3 GHz and a thermal conductivity equal to 0.25 W/(mK). Furthermore, when the layered composite is used as an electrical thermal heater the surface reaches a stable temperature of ~103 C in approx. 2 min, with an input bias of 2.5 V. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Comments: 13 pages, 5 figures

Journal ref: Nanoscale, 2020,12, 7782-7791

Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits

Authors: J. Kerckhoff, B. Sun, B. H. Fong, C. Jones, A. A. Kiselev, D. W. Barnes, R. S. Noah, E. Acuna, M. Akmal, S. D. Ha, J. A. Wright, B. J. Thomas, C. A. C. Jackson, L. F. Edge, K. Eng, R. S. Ross, T. D. Ladd

Abstract: We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width… ▽ More We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Comments: 17 pages, 11 figures

Journal ref: PRX Quantum 2, 010347 (2021)

Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

Authors: Dengyu Yang, Shan Hao, Jun Chen, Qing Guo, Muqing Yu, Yang Hu, KiTae Eom, Jung-Woo Lee, Chang-Beom Eom, Patrick Irvin, Jeremy Levy

Abstract: We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing techniqu… ▽ More We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. △ Less

Submitted 29 August, 2020; originally announced August 2020.

Comments: 4 figures

A Deep Neural Network Model of Particle Thermal Radiation in Packed Bed

Authors: Hao Wu, Shuang Hao

Abstract: Prediction of particle radiative heat transfer flux is an important task in the large discrete granular systems, such as pebble bed in power plants and industrial fluidized beds. For particle motion and packing, discrete element method (DEM) now is widely accepted as the excellent Lagrangian approach. For thermal radiation, traditional methods focus on calculating the obstructed view factor direct… ▽ More Prediction of particle radiative heat transfer flux is an important task in the large discrete granular systems, such as pebble bed in power plants and industrial fluidized beds. For particle motion and packing, discrete element method (DEM) now is widely accepted as the excellent Lagrangian approach. For thermal radiation, traditional methods focus on calculating the obstructed view factor directly by numerical algorithms. The major challenge for the simulation is that the method is proven to be time-consuming and not feasible to be applied in the practical cases. In this work, we propose an analytical model to calculate macroscopic effective conductivity from particle packing structures Then, we develop a deep neural network (DNN) model used as a predictor of the complex view factor function. The DNN model is trained by a large dataset and the computational speed is greatly improved with good accuracy. It is feasible to perform real-time simulation with DNN model for radiative heat transfer in large pebble bed. The trained model also can be coupled with DEM and used to analyze efficiently the directional radiative conductivity, anisotropic factor and wall effect of the particle thermal radiation. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Journal ref: Proceedings of the AAAI Conference on Artificial Intelligence. Vol. 34. No. 01. 2020

Observation of Negative THz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

Authors: Peng Suo, Huiyun Zhang, Shengnan Yan, Wenjie Zhang, Jibo Fu, Xian Lin, Song Hao, Zuanming Jin, Yuping Zhang, Chao Zhang, Feng Miao, Shi-Jun Liang, Guohong Ma

Abstract: As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Althoug… ▽ More As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices. △ Less

Submitted 1 February, 2021; v1 submitted 23 June, 2020; originally announced June 2020.

Comments: 18 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 227402 (2021)

Deep learning reveals hidden interactions in complex systems

Authors: Seungwoong Ha, Hawoong Jeong

Abstract: Rich phenomena from complex systems have long intrigued researchers, and yet modeling system micro-dynamics and inferring the forms of interaction remain challenging for conventional data-driven approaches, being generally established by human scientists. In this study, we propose AgentNet, a model-free data-driven framework consisting of deep neural networks to reveal and analyze the hidden inter… ▽ More Rich phenomena from complex systems have long intrigued researchers, and yet modeling system micro-dynamics and inferring the forms of interaction remain challenging for conventional data-driven approaches, being generally established by human scientists. In this study, we propose AgentNet, a model-free data-driven framework consisting of deep neural networks to reveal and analyze the hidden interactions in complex systems from observed data alone. AgentNet utilizes a graph attention network with novel variable-wise attention to model the interaction between individual agents, and employs various encoders and decoders that can be selectively applied to any desired system. Our model successfully captured a wide variety of simulated complex systems, namely cellular automata (discrete), the Vicsek model (continuous), and active Ornstein--Uhlenbeck particles (non-Markovian) in which, notably, AgentNet's visualized attention values coincided with the true interaction strength and exhibited collective behavior that was absent in the training data. A demonstration with empirical data from a flock of birds showed that AgentNet could identify hidden interaction ranges exhibited by real birds, which cannot be detected by conventional velocity correlation analysis. We expect our framework to open a novel path to investigating complex systems and to provide insight into general process-driven modeling. △ Less

Submitted 12 November, 2020; v1 submitted 2 January, 2020; originally announced January 2020.

Comments: 17 pages, 8 figures, 3 tables

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Authors: Akshay A. Murthy, Teodor K. Stanev, Roberto dos Reis, Shiqiang Hao, Chris Wolverton, Nathaniel P. Stern, Vinayak P. Dravid

Abstract: Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order… ▽ More Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished, and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of non-uniform heating and preferential oxidation at grain boundary sites in these materials. △ Less

Submitted 11 February, 2020; v1 submitted 7 October, 2019; originally announced October 2019.

Comments: 4 figures, ACS Nano

Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit

Authors: R. W. Andrews, C. Jones, M. D. Reed, A. M. Jones, S. D. Ha, M. P. Jura, J. Kerckhoff, M. Levendorf, S. Meenehan, S. T. Merkel, A. Smith, B. Sun, A. J. Weinstein, M. T. Rakher, T. D. Ladd, M. G. Borselli

Abstract: Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and… ▽ More Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations. △ Less

Submitted 6 December, 2018; originally announced December 2018.

Comments: 15 pages, 6 figures

Journal ref: Nature Nanotechnology 14, 747-750 (2019)

Reconfigurable edge-state engineering in graphene using LaAlO$_3$/SrTiO$_3$ nanostructures

Authors: Jianan Li, Qing Guo, Lu Chen, Shan Hao, Yang Hu, Jen-Feng Hsu, Hyungwoo Lee, Jung-Woo Lee, Chang-Beom Eom, Brian D'Urso, Patrick Irvin, Jeremy Levy

Abstract: The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The loca… ▽ More The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO nanostructures shift the position of graphene CNP by ~ $10^{12}$ cm$^{-2}$, and are also gateable. Here we use this effect to create reconfigurable edge states in graphene, which are probed using the quantum Hall effect. Quantized resistance plateaus at $h/e^2$ and $h/3e^2$ are observed in a split Hall device, demonstrating edge transport along the c-AFM written edge that depends on the polarity of both the magnetic field and direction of currents. This technique can be readily extended to other device geometries. △ Less

Submitted 26 March, 2019; v1 submitted 5 November, 2018; originally announced November 2018.

Comments: 12 pages

Journal ref: Appl. Phys. Lett. 114, 123103 (2019)

Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots

Authors: A. M. Jones, E. J. Pritchett, E. H. Chen, T. E. Keating, R. W. Andrews, J. Z. Blumoff, L. A. De Lorenzo, K. Eng, S. D. Ha, A. A. Kiselev, S. M. Meenehan, S. T. Merkel, J. A. Wright, L. F. Edge, R. S. Ross, M. T. Rakher, M. G. Borselli, A. Hunter

Abstract: We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea… ▽ More We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Comments: 18 pages, 9 figures

Journal ref: Phys. Rev. Applied 12, 014026 (2019)

High-Performance Multi-Mode Ptychography Reconstruction on Distributed GPUs

Authors: Zhihua Dong, Yao-Lung L. Fang, Xiaojing Huang, Hanfei Yan, Sungsoo Ha, Wei Xu, Yong S. Chu, Stuart I. Campbell, Meifeng Lin

Abstract: Ptychography is an emerging imaging technique that is able to provide wavelength-limited spatial resolution from specimen with extended lateral dimensions. As a scanning microscopy method, a typical two-dimensional image requires a number of data frames. As a diffraction-based imaging technique, the real-space image has to be recovered through iterative reconstruction algorithms. Due to these two… ▽ More Ptychography is an emerging imaging technique that is able to provide wavelength-limited spatial resolution from specimen with extended lateral dimensions. As a scanning microscopy method, a typical two-dimensional image requires a number of data frames. As a diffraction-based imaging technique, the real-space image has to be recovered through iterative reconstruction algorithms. Due to these two inherent aspects, a ptychographic reconstruction is generally a computation-intensive and time-consuming process, which limits the throughput of this method. We report an accelerated version of the multi-mode difference map algorithm for ptychography reconstruction using multiple distributed GPUs. This approach leverages available scientific computing packages in Python, including mpi4py and PyCUDA, with the core computation functions implemented in CUDA C. We find that interestingly even with MPI collective communications, the weak scaling in the number of GPU nodes can still remain nearly constant. Most importantly, for realistic diffraction measurements, we observe a speedup ranging from a factor of $10$ to $10^3$ depending on the data size, which reduces the reconstruction time remarkably from hours to typically about 1 minute and is thus critical for real-time data processing and visualization. △ Less

Submitted 30 August, 2018; originally announced August 2018.

Comments: work presented in NYSDS 2018

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Authors: Song Hao, Junwen Zeng, Tao Xu, Xin Cong, Chenyu Wang, Chenchen Wu, Yaojia Wang, Xiaowei Liu, Tianjun Cao, Guangxu Su, Lanxin Jia, Zhangting Wu, Qian Lin, Lili Zhang, Shengnan Yan, Mengfan Guo, Zhenlin Wang, Pingheng Tan, Litao Sun, Zhenhua Ni, Shi-Jun Liang, Xinyi Cui, Feng Miao

Abstract: Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis pr… ▽ More Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Advanced Functional Materials 2018, 1803746

Out-of-Plane Mechanical Properties of 2D Hybrid Organic-Inorganic Perovskites by Nanoindentation

Authors: Qing Tu, Ioannis Spanopoulos, Shiqiang Hao, Christopher Wolverton, Mercouri G. Kanatzidis, Gajendra S. Shekhawat, Vinayak P. Dravid

Abstract: 2D layered hybrid organic-inorganic perovskites (HOIPs) have demonstrated improved stability and promising photovoltaic performance. The mechanical properties of such functional materials are both fundamentally and practically important to achieve both high performance and mechanical stable (flexible) devices. Here we report the mechanical properties of a series of 2D layered lead iodide HOIPs and… ▽ More 2D layered hybrid organic-inorganic perovskites (HOIPs) have demonstrated improved stability and promising photovoltaic performance. The mechanical properties of such functional materials are both fundamentally and practically important to achieve both high performance and mechanical stable (flexible) devices. Here we report the mechanical properties of a series of 2D layered lead iodide HOIPs and investigate the role of structural sub-units (e.g., variation of the length of the organic spacer molecules -R and the number of inorganic layer -n) on the mechanical properties. While 2D HOIPs have much lower nominal elastic moduli and hardness than 3D HOIPs, larger n number and shorter R lead to stiffer materials. DFT simulations showed a similar trend to the experimental results. We compared these findings with other 2D layered crystals and shed light on routes to further tune the out-of-plane mechanical properties of 2D layered HOIPs. △ Less

Submitted 7 June, 2018; v1 submitted 29 March, 2018; originally announced March 2018.

Computational investigation of multivalent binding of a ligand coated particle: Role of shape, size and ligand heterogeneity from a free energy landscape perspective

Authors: Matt McKenzie, Sung Min Ha, Aravind Rammohan, Ravi Radhakrishnan, N. Ramakrishnan

Abstract: We utilize a multiscale modeling framework to study the effect of shape, size and ligand composition on the efficacy of binding of a ligand-coated-particle to a substrate functionalized with the target receptors. First, we show how molecular dynamics (MD) along with Steered MD calculations can be used to accurately parameterize the molecular binding free energy and the effective spring constant fo… ▽ More We utilize a multiscale modeling framework to study the effect of shape, size and ligand composition on the efficacy of binding of a ligand-coated-particle to a substrate functionalized with the target receptors. First, we show how molecular dynamics (MD) along with Steered MD calculations can be used to accurately parameterize the molecular binding free energy and the effective spring constant for a receptor-ligand pair. We demonstrate this for two ligands that bind to the $α_5β_1$-domain of integrin. Next, we show how these effective potentials can be used to build computational models at the meso- and continuum- scales. These models incorporate the molecular nature of the receptor-ligand interactions and yet provide an inexpensive route to study the multivalent interaction of receptors and ligands through the construction of Bell potentials customized to the molecular identities. We quantify the binding efficacy of the ligand-coated-particle in terms of its multivalency, binding free energy landscape and the losses in the configurational entropies. We show that (i) the binding avidity for particle sizes less than $350$ nm is set by the competition between the enthalpic and entropic contributions while that for sizes above $350$ nm is dominated by the enthalpy of binding, (ii) anisotropic particles display higher multivalent binding compared to spherical particles and (iii) variations in ligand composition can alter binding avidity without altering the average multivalency. The methods and results presented here have wide applications in the rational design of functionalized carriers and also in understanding cell adhesion. △ Less

Submitted 6 March, 2018; v1 submitted 25 October, 2017; originally announced October 2017.

Comments: 28 pages, 10 figures

Lithium transport through Lithium-ion battery cathode coatings

Authors: Shenzhen Xu, Ryan M. Jacobs, Ha M. Nguyen, Shiqiang Hao, Mahesh Mahanthappa, Chris Wolverton, Dane Morgan

Abstract: The surface coating of cathodes using insulator films has proven to be a promising method for high-voltage cathode stabilization in Li-ion batteries. However, there is still substantial uncertainty about how these films function, specifically with regard to important coating design principles such as lithium solubility and transport through the films. This study uses Density Functional Theory to e… ▽ More The surface coating of cathodes using insulator films has proven to be a promising method for high-voltage cathode stabilization in Li-ion batteries. However, there is still substantial uncertainty about how these films function, specifically with regard to important coating design principles such as lithium solubility and transport through the films. This study uses Density Functional Theory to examine the diffusivity of interstitial lithium in crystalline α-$AlF_3$, α-$Al_2O_3$, m-$ZrO_2$, c-MgO, and α-quartz $SiO_2$, which provide benchmark cases for further understanding of insulator coatings in general. In addition, we propose an Ohmic electrolyte model to predict resistivities and overpotential contributions under battery operating conditions. For the crystalline materials considered we predict that Li+ diffuses quite slowly, with a migration barrier larger than 0.9 eV in all crystalline materials except α-quartz $SiO_2$, which is predicted to have a migration barrier of 0.276 eV along <001>. These results suggest that the stable crystalline forms of these insulator materials, except for oriented α-quartz $SiO_2$, are not practical for conformal cathode coatings. Amorphous $Al_2O_3$ and $AlF_3$ have higher Li+ diffusivities than their crystalline counterparts. Our predicted amorphous $Al_2O_3$ resistivity (1789 MΩm) is near the top of the range of fitted resistivities extracted from previous experiments on nominal $Al_2O_3$ coatings (7.8 to 913 MΩm) while our predicted amorphous $AlF_3$ resistivity (114 MΩm) is close to the middle of the range. These comparisons support our framework for modeling and understanding the impact on overpotential of conformal coatings in terms of their fundamental thermodynamic and kinetic properties, and support that these materials can provide practical conformal coatings in their amorphous form. △ Less

Submitted 7 July, 2016; originally announced July 2016.

Ultralow Thermal Conductivity in Full-Heusler Semiconductors

Authors: Jiangang He, Maximilian Amsler, Yi Xia, S. Shahab Naghavi, Vinay I. Hegde, Shiqiang Hao, Stefan Goedecker, Vidvuds Ozoliņš, Chris Wolverton

Abstract: Semiconducting half- and, to a lesser extent, full-Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class… ▽ More Semiconducting half- and, to a lesser extent, full-Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full-Heusler compounds with ten valence electrons ($X_2YZ$, $X$=Ca, Sr, and Ba; $Y$= Au and Hg; $Z$=Sn, Pb, As, Sb, and Bi) through high-throughput $ab-initio$ screening. These new compounds exhibit ultralow lattice thermal conductivity $κ_{\text{L}}$ close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials. △ Less

Submitted 14 April, 2016; v1 submitted 13 April, 2016; originally announced April 2016.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Lett. 117, 046602 (2016)

Neuromimetic Circuits with Synaptic Devices based on Strongly Correlated Electron Systems

Authors: Sieu D. Ha, Jian Shi, Yasmine Meroz, L. Mahadevan, Shriram Ramanathan

Abstract: Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and… ▽ More Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and non-associative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogues may provide insight into biological processes such as decision making, learning and adaptation, while facilitating advanced parallel information processing in hardware. △ Less

Submitted 15 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. Applied 2, 064003 (2014)

Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films

Authors: Anindita Sahoo, Sieu D. Ha, Shriram Ramanathan, Arindam Ghosh

Abstract: Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is… ▽ More Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates. △ Less

Submitted 3 August, 2014; originally announced August 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 90, 085116 (2014)

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

Authors: R. Jaramillo, Sieu D. Ha, D. M. Silevitch, Shriram Ramanathan

Abstract: For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3… ▽ More For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle. △ Less

Submitted 27 September, 2013; originally announced September 2013.

Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices

Authors: Sieu D. Ha, You Zhou, Christopher J. Fisher, Shriram Ramanathan, Jacob P. Treadway

Abstract: Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-M… ▽ More Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Journal ref: J. Appl. Phys. 113, 184501 (2013)

Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films

Authors: Sieu D. Ha, Ulrich Vetter, Jian Shi, Shriram Ramanathan

Abstract: The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We… ▽ More The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We show that resistance modulation is predominantly due to electrostatic charge accumulation and not electrochemical doping by control experiments in inert and air en-vironments. We model the resistance behavior and estimate the accumulated sheet density (~1-2 x 10^14 cm^-2) and EDL capacitance (~12 μF/cm^2). △ Less

Submitted 9 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 102, 183102 (2013)

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

Authors: Sieu D. Ha, R. Jaramillo, D. M. Silevitch, Frank Schoofs, Kian Kerman, John D. Baniecki, Shriram Ramanathan

Abstract: The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va… ▽ More The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation. △ Less

Submitted 5 March, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Comments: *Equally contributing first authors

Journal ref: Phys. Rev. B 87, 125150 (2013)

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

Authors: Pilkyung Moon, J. D. Lee, S. K. Ha, E. H. Lee, W. J. Choi, J. D. Song, J. S. Kim, L. S. Dang

Abstract: We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and… ▽ More We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and cathodoluminescence measurements, and specified the emissions from the dots by selectively etching the structure down to a lower layer of quantum dots. We studied the influences of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, which has the same composition as the dots, since the superlattice has uniform and well-defined geometry. Theoretical analysis provided the diffusion length dependence of the peak shifts of the emission spectra. △ Less

Submitted 21 August, 2012; originally announced August 2012.

Journal ref: Phys. Status Solidi RRL 6, No. 11, pp. 445-447 (2012)

Nonlinear stability of phase-locked states for the Kuramoto model with finite inertia

Authors: Young-Pil Choi, Chulho Choi, Meesoon Ha, Seung-Yeal Ha

Abstract: We discuss the {\it nonlinear stability} of phase-locked states for globally coupled nonlinear oscillators with finite inertia, namely the modified Kuramoto model, in the context of the robust $\ell^{\infty}$-norm. We show that some classes of phase-locked states are orbitally $\ell{\infty}$-stable in the sense that its small perturbation asymptotically leads to only the phase shift of the phase-l… ▽ More We discuss the {\it nonlinear stability} of phase-locked states for globally coupled nonlinear oscillators with finite inertia, namely the modified Kuramoto model, in the context of the robust $\ell^{\infty}$-norm. We show that some classes of phase-locked states are orbitally $\ell{\infty}$-stable in the sense that its small perturbation asymptotically leads to only the phase shift of the phase-locked state from the original one without changing its fine structures as keeping the same suitable coupling strength among oscillators and the same natural frequencies. The phase shift is uniquely determined by the average of initial phases, the average of initial frequencies, and the strength of inertia. We numerically confirm the stability of the phase-locked state as well as its uniqueness and the phase shift, where various initial conditions are considered. Finally, we argue that some restricted conditions employed in the mathematical proof are not necessary, based on numerical simulation results. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Comments: 15 pages, 6 figures (10 eps files), 2 tables; submitted to JSP

Numerical Simulation of Magnetic Interactions in Polycrystalline YFeO3

Authors: E. Lima Jr., T. B. Martins, H. R. Rechenberg, G. F. Goya, C. Cavelius, R. Rapalaviciute, S. Hao, S. Mathur

Abstract: The magnetic behavior of polycrystalline yttrium orthoferrite was studied from the experimental and theoretical points of view. Magnetization measurements up to 170 kOe were carried out on a single-phase YFeO3 sample synthesized from heterobimetallic alkoxides. The complex interplay between weak-ferromagnetic and antiferromagnetic interactions, observed in the experimental M(H) curves, was success… ▽ More The magnetic behavior of polycrystalline yttrium orthoferrite was studied from the experimental and theoretical points of view. Magnetization measurements up to 170 kOe were carried out on a single-phase YFeO3 sample synthesized from heterobimetallic alkoxides. The complex interplay between weak-ferromagnetic and antiferromagnetic interactions, observed in the experimental M(H) curves, was successfully simulated by locally minimizing the magnetic energy of two interacting Fe sublattices. The resulting values of exchange field (H_E = 5590 kOe), anisotropy field (H_A = 0.5 kOe) and Dzyaloshinsky-Moriya antisymmetric field (H_D = 149 kOe) are in good agreement with previous reports on this system. △ Less

Submitted 23 March, 2011; originally announced March 2011.

Comments: 26 pages, 9 figures

Journal ref: Journal of Magnetism and Magnetic Materials 320 (2008) 622-629

Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

Authors: Sieu D. Ha, Gulgun H. Aydogdu, Shriram Ramanathan

Abstract: The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperat… ▽ More The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices. △ Less

Submitted 18 January, 2011; originally announced January 2011.

Analytic expression of the temperature increment in a spin transfer torque nanopillar structure

Authors: Chun-Yeol You, Seung-Seok Ha, Hyun-Woo Lee

Abstract: The temperature increment due to the Joule heating in a nanopillar spin transfer torque system is investigated. We obtain a time dependent analytic solution of the heat conduction equation in nanopillar geometry by using the Green's function method after some simplifications of the problem. While Holm's equation is applicable only to steady states in metallic systems, our solution describes the… ▽ More The temperature increment due to the Joule heating in a nanopillar spin transfer torque system is investigated. We obtain a time dependent analytic solution of the heat conduction equation in nanopillar geometry by using the Green's function method after some simplifications of the problem. While Holm's equation is applicable only to steady states in metallic systems, our solution describes the time dependence and is also applicable to a nanopillar-shaped magnetic tunneling junction with an insulator barrier layer. The validity of the analytic solution is confirmed by numerical finite element method simulations and by the comparison with Holm's equation. △ Less

Submitted 11 June, 2009; originally announced June 2009.

Adsorption of gas molecules on graphene nanoribbons and its implication for nano-scale molecule sensor

Authors: Bing Huang, Zuanyi Li, Zhirong Liu, Gang Zhou, Shaogang Hao, Jian Wu, Bing-Lin Gu, Wenhui Duan

Abstract: We have studied the adsorption of gas molecules (CO, NO, NO2, O2, N2, CO2, and NH3) on graphene nanoribbons (GNRs) using first principles methods. The adsorption geometries, adsorption energies, charge transfer, and electronic band structures are obtained. We find that the electronic and transport properties of the GNR with armchair-shaped edges are sensitive to the adsorption of NH3 and the sys… ▽ More We have studied the adsorption of gas molecules (CO, NO, NO2, O2, N2, CO2, and NH3) on graphene nanoribbons (GNRs) using first principles methods. The adsorption geometries, adsorption energies, charge transfer, and electronic band structures are obtained. We find that the electronic and transport properties of the GNR with armchair-shaped edges are sensitive to the adsorption of NH3 and the system exhibits n type semiconducting behavior after NH3 adsorption. Other gas molecules have little effect on modifying the conductance of GNRs. Quantum transport calculations further indicate that NH3 molecules can be detected out of these gas molecules by GNR based sensor. △ Less

Submitted 10 March, 2008; originally announced March 2008.

Comments: 13 pages and 5 figures

Journal ref: J. Phys. Chem. C 2008, 112, 13442?C13446

Intrinsic magnetism of open boron nitride nanotubes

Authors: Shaogang Hao, Gang Zhou, Wenhui Duan, Jian Wu, Bing-Lin Gu

Abstract: This paper has been withdrawn by the author due to the incomplete results. This paper has been withdrawn by the author due to the incomplete results. △ Less

Submitted 22 May, 2006; v1 submitted 12 September, 2005; originally announced September 2005.

Comments: This paper has been withdrawn

Single-filament Composite MgB2/SUS Ribbons by Powder-In-Tube Process

Authors: K. J. Song, N. J. Lee, H. M. Jang, H. S. Ha, D. W. Ha, S. S. OH, M. H. Sohn, Y. K. Kwon, K. S. Ryu

Abstract: We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K w… ▽ More We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K were observed at self-field, for the non-sintered composite MgB2/SUS ribbon. In addition, the persistent current density Jp values, that were estimated by Bean formula, were more than ~ 7 &#61620; 105 A/cm2 at T = 5 K, and ~ 1.2 &#61620; 105 A/cm2 at T = 30 K, for the sintered composite MgB2/SUS ribbon, at H = 0 G. △ Less

Submitted 6 June, 2001; originally announced June 2001.

Comments: 10 pages, 4 figures