Showing 1–11 of 11 results for author: Hao, F

Flexo-diffusion effect: the strong influence on lithium diffusion induced by strain gradient

Authors: Gao Xu, Feng Hao, Mouyi Weng, Jiawang Hong, Feng Pan, Daining Fang

Abstract: Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) sig… ▽ More Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) significantly affects Li diffusion barrier, which is termed as the flexo-diffusion effect, through first-principles calculations. The Li diffusion barrier substantially decreases/increases under the positive/negative strain gradient, leading to the change of Li diffusion coefficient in several orders of magnitude at 300 K. Interestingly, the regulation effect of strain gradient is much more significant than that of uniform strain field, which can have a remarkable effect on the rate performance of batteries, with a considerable increase in the ionic conductivity and a slight change of the original material structure. Moreover, our ab initio molecular dynamics simulations (AIMD) show that the asymmetric distorted lattice structure provides a driving force for Li diffusion, resulting in oriented diffusion along the positive strain gradient direction. These findings could extend present LIBs technologies by introducing the novel strain gradient engineering. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Journal ref: Nanoscale 12, 15175 (2020)

Strain gradient drives lithium dendrite growth from the atomic-scale simulations

Authors: Gao Xu, Feng Hao, Jiawang Hong, Daining Fang

Abstract: Dendrite formation is a major obstacle, such as capacity loss and short circuit, to the next-generation high-energy-density lithium (Li) metal batteries. The development of successful Li dendrite mitigation strategies is impeded by an insufficient understanding of Li dendrite growth mechanisms. Li-plating-induced internal stress in Li metal and its effect on dendrite growth have been studied in pr… ▽ More Dendrite formation is a major obstacle, such as capacity loss and short circuit, to the next-generation high-energy-density lithium (Li) metal batteries. The development of successful Li dendrite mitigation strategies is impeded by an insufficient understanding of Li dendrite growth mechanisms. Li-plating-induced internal stress in Li metal and its effect on dendrite growth have been studied in previous models and experiments, while the underlying microcosmic mechanism is elusive. Here, we analyze the role of plating-induced stress in dendrite formation through first-principles calculations and ab initio molecular dynamics simulations. We show that the deposited Li forms a stable atomic nanofilm structure on copper (Cu) substrate. It is found that the adsorption energy of Li atoms increases from the Li-Cu interface to deposited Li surface, leading to more aggregated Li atoms at the interface. Compared to the pristine Li metal, the deposited Li in the early stage becomes compacted and suffers in-plane compressive stress. Interestingly, we find that there is a giant strain gradient distribution from the Li-Cu interface to deposited Li surface, which makes the deposited atoms adjacent to the Cu surface tend to press upwards with perturbation, causing the dendrite growth. This understanding provides an insight to the atomic-scale origin of Li dendrite growth and may be useful for suppressing the Li dendrite in the Li-metal-based rechargeable batteries. △ Less

Submitted 5 January, 2020; originally announced January 2020.

Journal ref: Applied Mathematics and Mechanics volume 41, 533-542 (2020)

Unconventional Localization Prior to Wrinkles and Controllable Surface Patterns of Film Substrate Bilayers Through Patterned Defects in Substrate

Authors: Xiangbiao Liao, Liangliang Zhu, Hang Xiao, Junan Pan, Feng Hao, Xiaoyang Shi, Xi Chen

Abstract: A novel bilayer is introduced, consisting of a stiff film adhered to a soft substrate with patterned holes beneath the film and substrate interface. To uncover the transition of surface patterns, two dimensional plane strain simulations are performed on the defected bilayer subjected to uniaxial compression. Although the substrate is considered as the linear elastic material, the presence of defec… ▽ More A novel bilayer is introduced, consisting of a stiff film adhered to a soft substrate with patterned holes beneath the film and substrate interface. To uncover the transition of surface patterns, two dimensional plane strain simulations are performed on the defected bilayer subjected to uniaxial compression. Although the substrate is considered as the linear elastic material, the presence of defects can directly trigger the formation of locally ridged and then folding configurations from flat surface with a relatively small compressive strain. It is followed by the coexisting phases of folds and wrinkles under further overall compression. This phase transition reverses the traditional transition of wrinkle to ridge or fold for defect free substrates. It is also found that the onset of initial bifurcation is highly dependent on the spatial configuration and geometries of holes, since the interaction of defects allows more strain relief mechanisms beyond wrinkling. Furthermore, a rich diversity of periodic surface topologies, including overall waves, localizations, saw like and coexisting features of folds and wrinkles can be obtained by varying the diameter, depth and spacing of holes as well as compressive strain, which provides a potential approach to engineer various surface patterns for applications. △ Less

Submitted 29 March, 2017; originally announced March 2017.

Predicting a Two-dimensional P2S3 Monolayer: A Global Minimum Structure

Authors: Hang Xiao, Xiaoyang Shi, Feng Hao, Xiangbiao Liao, Yayun Zhang, Xi Chen

Abstract: Based on extensive evolutionary algorithm driven structural search, we propose a new diphosphorus trisulfide (P2S3) 2D crystal, which is dynamically, thermally and chemically stable as confirmed by the computed phonon spectrum and ab initio molecular dynamics simulations. This 2D crystalline phase of P2S3 corresponds to the global minimum in the Born-Oppenheimer surface of the phosphorus sulfide m… ▽ More Based on extensive evolutionary algorithm driven structural search, we propose a new diphosphorus trisulfide (P2S3) 2D crystal, which is dynamically, thermally and chemically stable as confirmed by the computed phonon spectrum and ab initio molecular dynamics simulations. This 2D crystalline phase of P2S3 corresponds to the global minimum in the Born-Oppenheimer surface of the phosphorus sulfide monolayers with 2:3 stoichiometries. It is a wide band gap (4.55 eV) semiconductor with P-S σ bonds. The electronic properties of P2S3 structure can be modulated by stacking into multilayer P2S3 structures, forming P2S3 nanoribbons or rolling into P2S3 nanotubes, expanding its potential applications for the emerging field of 2D electronics. △ Less

Submitted 1 March, 2017; originally announced March 2017.

A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K

Authors: Jikun Chen, Hongyi Chen, Feng Hao, Xinyou Ke, Nuofu Chen, Takeaki Yajima, Yong Jiang, Xun Shi, Kexiong Zhou, Max Döbeli, Tiansong Zhang, Binghui Ge, Hongliang Dong, Huarong Zeng Wenwang Wu, Lidong Chen

Abstract: Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, two-dimensional electron gas (2DEG) related TE materials hold the records for zT near room-temperature. A sharp increase in zT up to ~2.0 was observed previously for superlattice materials such as PbSeTe, Bi2Te3/Sb2Te3 an… ▽ More Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, two-dimensional electron gas (2DEG) related TE materials hold the records for zT near room-temperature. A sharp increase in zT up to ~2.0 was observed previously for superlattice materials such as PbSeTe, Bi2Te3/Sb2Te3 and SrNb0.2Ti0.8O3/SrTiO3, when the thicknesses of these TE materials were spatially confine within sub-nanometre scale. The two-dimensional confinement of carriers enlarges the density of states near the Fermi energy3-6 and triggers electron phonon coupling. This overcomes the conventional σ-S trade-off to more independently improve S, and thereby further increases thermoelectric power factors (PF=S2σ). Nevertheless, practical applications of the present 2DEG materials for high power energy conversions are impeded by the prerequisite of spatial confinement, as the amount of TE material is insufficient. Here, we report similar TE properties to 2DEGs but achieved in SrNb0.2Ti0.8O3 films with thickness within sub-micrometer scale by regulating interfacial and lattice polarizations. High power factor (up to 103 μWcm-1K-2) and zT value (up to 1.6) were observed for the film materials near room-temperature and below. Even reckon in the thickness of the substrate, an integrated power factor of both film and substrate approaching to be 102 μWcm-1K-2 was achieved in a 2 μm-thick SrNb0.2Ti0.8O3 film grown on a 100 μm-thick SrTiO3 substrate. The dependence of high TE performances on size-confinement is reduced by ~103 compared to the conventional 2DEG-related TE materials. As-grown oxide films are less toxic and not dependent on large amounts of heavy elements, potentially paving the way towards applications in localised refrigeration and electric power generations. △ Less

Submitted 28 January, 2017; originally announced January 2017.

Enhanced Superconductivity in TiO Epitaxial Thin Films

Authors: Chao Zhang, Feixiang Hao, Guanyin Gao, Xiang Liu, Chao Ma, Yue Lin, Yuewei Yin, Xiaoguang Li

Abstract: Titanium oxides have many fascinating optical and electrical properties, such as the superconductivity at 2.0 K in cubic titanium monoxide TiO polycrystalline bulk. However, the lack of TiO single crystals or epitaxial films has prevented systematic investigations on its superconductivity. Here, we report the basic superconductivity characterizations of cubic TiO films epitaxially grown on (0001)-… ▽ More Titanium oxides have many fascinating optical and electrical properties, such as the superconductivity at 2.0 K in cubic titanium monoxide TiO polycrystalline bulk. However, the lack of TiO single crystals or epitaxial films has prevented systematic investigations on its superconductivity. Here, we report the basic superconductivity characterizations of cubic TiO films epitaxially grown on (0001)-oriented Al2O3 substrates. The magnetic and electronic transport measurements confirmed that TiO is a type-II superconductor and the record high Tc is about 7.4 K. The lower critical field (Hc1) at 1.9 K, the extrapolated upper critical field Hc2(0) and coherence length are about 18 Oe, 13.7 T and 4.9 nm, respectively. With increasing pressure, the value of Tc shifts to lower temperature while the normal state resistivity increases. Our results on the superconducting TiO films confirm the strategy to achieve higher Tc in epitaxial films, which may be helpful for finding more superconducting materials in various related systems. △ Less

Submitted 19 December, 2016; originally announced December 2016.

Prediction of a Two-dimensional Sulfur Nitride (S3N2) Solid for Nanoscale Optoelectronic Applications

Authors: Hang Xiao, Xiaoyang Shi, Feng Hao, Xiangbiao Liao, Yayun Zhang, Xi Chen

Abstract: Two-dimensional materials have attracted tremendous attention for their fascinating electronic, optical, chemical and mechanical properties. However, the band gaps of most 2D materials reported are smaller than 2.0 eV, which greatly restricted their optoelectronic applications in blue and ultraviolet range of the spectrum. Here, we propose a new stable sulfur nitride (S3N2) 2D crystal that is a co… ▽ More Two-dimensional materials have attracted tremendous attention for their fascinating electronic, optical, chemical and mechanical properties. However, the band gaps of most 2D materials reported are smaller than 2.0 eV, which greatly restricted their optoelectronic applications in blue and ultraviolet range of the spectrum. Here, we propose a new stable sulfur nitride (S3N2) 2D crystal that is a covalent network composed solely of S-N σ bonds. S3N2 crystal is dynamically stable as confirmed by the computed phonon spectrum and ab initio molecular dynamics simulations in the NPT ensemble. Hybrid density functional calculations show that 2D S3N2 crystal is a wide, direct band-gap (3.17 eV) semiconductor with good hole mobility. These fascinating electronic properties could pave the way for its optoelectronic applications such as blue or ultra-violet light-emitting diodes (LEDs) and photodetectors. △ Less

Submitted 5 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. Materials 2, 024002 (2018)

Prediction of a Two-dimensional Phosphorus Nitride Monolayer

Authors: Hang Xiao, Feng Hao, Xiangbiao Liao, Xiaoyang Shi, Yayun Zhang, Xi Chen

Abstract: Today, 2D semiconductor materials have been extended into the nitrogen group: phosphorene, arsenene, antimonene and even nitrogene. Motivated by them, based upon first-principles density functional calculations, we propose a new two-dimensional phosphorus nitride (PN) structure that is stable well above the room temperature, due to its extremely high cohesive energy. Unlike phosphorene, PN structu… ▽ More Today, 2D semiconductor materials have been extended into the nitrogen group: phosphorene, arsenene, antimonene and even nitrogene. Motivated by them, based upon first-principles density functional calculations, we propose a new two-dimensional phosphorus nitride (PN) structure that is stable well above the room temperature, due to its extremely high cohesive energy. Unlike phosphorene, PN structure is resistant to high temperature oxidation. The structure is predicted to be a semiconductor with a wide, indirect band gap of 2.64 eV. More interestingly, the phosphorus nitride monolayer experiences an indirect-to-direct band-gap transition at a relatively small tensile strain. Such dramatic transformation in the electronic structure combined with structural stability and oxidation resistance at high temperature could pave the way for exciting innovations in high-speed ultrathin transistors, power electronic modules, ultra-high efficiency LEDs and semiconductor lasers. △ Less

Submitted 9 March, 2016; v1 submitted 7 March, 2016; originally announced March 2016.

Effects of intrinsic strain on the structural stability and mechanical properties of phosphorene nanotubes

Authors: Xiangbiao Liao, Feng Hao, Hang Xiao, Xi Chen

Abstract: Using molecular dynamics (MD) simulations, we explore the structural stability and mechanical integrity of phosphorene nanotubes (PNTs), where the intrinsic strain in the tubular PNT structure plays an important role. It is proposed that the atomic structure of larger-diameter armchair PNTs (armPNTs) can remain stable at higher temperature, but the high intrinsic strain in the hoop direction rende… ▽ More Using molecular dynamics (MD) simulations, we explore the structural stability and mechanical integrity of phosphorene nanotubes (PNTs), where the intrinsic strain in the tubular PNT structure plays an important role. It is proposed that the atomic structure of larger-diameter armchair PNTs (armPNTs) can remain stable at higher temperature, but the high intrinsic strain in the hoop direction renders zigzag PNTs (zigPNTs) less favorable. The mechanical properties of PNTs, including the Young's modulus and fracture strength, are sensitive to the diameter, showing a size dependence. A simple model is proposed to express the Young's modulus as a function of the intrinsic axial strain which in turns depends on the diameter of PNTs. In addition, the compressive buckling of armPNTs is length-dependent, whose instability modes transit from column buckling to shell buckling are observed as the ratio of diameter/length increases. △ Less

Submitted 14 January, 2016; v1 submitted 23 December, 2015; originally announced December 2015.

Comments: 22 pages, 7 figures

Thermal conductivity of armchair black phosphorus nanotubes: a molecular dynamics study

Authors: Feng Hao, Xiangbiao Liao, Hang Xiao, Xi Chen

Abstract: The effects of size, strain, and vacancies on thermal properties of armchair black phosphorus nanotubes are investigated based on qualitative analysis from molecular dynamics simulations. It is found that the thermal conductivity has a remarkable size effect because of the restricted paths for phonon transport, strongly depending on the diameter and length of nanotube. Owing to the intensified low… ▽ More The effects of size, strain, and vacancies on thermal properties of armchair black phosphorus nanotubes are investigated based on qualitative analysis from molecular dynamics simulations. It is found that the thermal conductivity has a remarkable size effect because of the restricted paths for phonon transport, strongly depending on the diameter and length of nanotube. Owing to the intensified low-frequency phonons, axial tensile strain can facilitate thermal transport. On the contrary, compressive strain weakens thermal transport due to the enhanced phonon scattering around the buckling of nanotube. In addition, the thermal conductivity is dramatically reduced by single vacancies, especially upon high defect concentrations. △ Less

Submitted 3 April, 2017; v1 submitted 16 December, 2015; originally announced December 2015.

Exceptionally large room-temperature ferroelectric polarization in the novel PbNiO3 multiferroic oxide

Authors: X. F. Hao, A. Stroppa, S. Picozzi, A. Filippetti, C. Franchini

Abstract: We present a study based on several advanced First-Principles methods, of the recently synthesized PbNiO3 [J. Am. Chem. Soc 133, 16920 (2011)], a rhombohedral antiferromagnetic insulator which crystallizes in the highly distorted R3c crystal structure. We find this compound electrically polarized, with a very large electric polarization of about 100 (\muC/cm)^2, thus even exceeding the polarizatio… ▽ More We present a study based on several advanced First-Principles methods, of the recently synthesized PbNiO3 [J. Am. Chem. Soc 133, 16920 (2011)], a rhombohedral antiferromagnetic insulator which crystallizes in the highly distorted R3c crystal structure. We find this compound electrically polarized, with a very large electric polarization of about 100 (\muC/cm)^2, thus even exceeding the polarization of well-known BiFeO3. PbNiO3 is a proper ferroelectric, with polarization driven by large Pb-O polar displacements along the [111] direction. Contrarily to naive expectations, a definite ionic charge of 4+ for Pb ion can not be assigned, and in fact the large Pb 6s-O 2p hybridization drives the ferroelectric distortion through a lone-pair mechanism similar to that of other Pb- and Bi-based multiferroics △ Less

Submitted 13 June, 2012; originally announced June 2012.