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Frontier orbitals control dynamical disorder in molecular semiconductors
Authors:
Alexander Neef,
Sebastian Hammer,
Yuxuan Yao,
Shubham Sharma,
Samuel Beaulieu,
Shuo Dong,
Tommaso Pincelli,
Maximillian Frank,
Martin Wolf,
Mariana Rossi,
Harld Oberhofer,
Laurenz Rettig,
Jens Pflaum,
Ralph Ernstorfer
Abstract:
Charge transport in organic semiconductors is limited by dynamical disorder. Design rules for new high-mobility materials have therefore focused on limiting its two foundations: structural fluctuations and the transfer integral gradient. However, it has remained unclear how these goals should be translated into molecular structures. Here we show that a specific shape of the frontier orbital, with…
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Charge transport in organic semiconductors is limited by dynamical disorder. Design rules for new high-mobility materials have therefore focused on limiting its two foundations: structural fluctuations and the transfer integral gradient. However, it has remained unclear how these goals should be translated into molecular structures. Here we show that a specific shape of the frontier orbital, with a lack of nodes along the long molecular axis, reduces the transfer integral gradient and therefore the dynamical disorder. We investigated single crystals of the prototypical molecular semiconductors pentacene and picene by angle-resolved photoemission spectroscopy and dynamical disorder calculations. We found that picene exhibits a remarkably low dynamical disorder. By separating in- and out-of-plane components of dynamical disorder, we identify the reason as a reduced out-of-plane disorder from a small transfer integral derivative. Our results demonstrate that molecules with an armchair $π$-electron topology and same-phase frontier orbitals like picene are promising molecular building blocks for the next generation of organic semiconductors.
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Submitted 8 December, 2024;
originally announced December 2024.
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Surface doping of rubrene single crystals by molecular electron donors and acceptors
Authors:
Christos Gatsios,
Andreas Opitz,
Dominique Lungwitz,
Ahmed E. Mansour,
Thorsten Schultz,
Dongguen Shin,
Sebastian Hammer,
Jens Pflaum,
Yadong Zhang,
Stephen Barlow,
Seth R. Marder,
Norbert Koch
Abstract:
The surface molecular doping of organic semiconductors can play an important role in the development of organic electronic or optoelectronic devices. Single-crystal rubrene remains a leading molecular candidate for applications in electronics due to its high hole mobility. In parallel, intensive research into the fabrication of flexible organic electronics requires the careful design of functional…
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The surface molecular doping of organic semiconductors can play an important role in the development of organic electronic or optoelectronic devices. Single-crystal rubrene remains a leading molecular candidate for applications in electronics due to its high hole mobility. In parallel, intensive research into the fabrication of flexible organic electronics requires the careful design of functional interfaces to enable optimal device characteristics. To this end, the present work seeks to understand the effect of surface molecular doping on the electronic band structure of rubrene single crystals. Our angle-resolved photoemission measurements reveal that the Fermi level moves in the band gap of rubrene depending on the direction of surface electron-transfer reactions with the molecular dopants, yet the valence band dispersion remains essentially unperturbed. This indicates that surface electron-transfer doping of a molecular single crystal can effectively modify the near-surface charge density, while retaining good charge-carrier mobility.
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Submitted 11 January, 2024;
originally announced January 2024.
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Spectroscopic analysis of vibrational coupling in multi-molecular excited states
Authors:
Sebastian Hammer,
Theresa Linderl,
Kristofer Tvingstedt,
Wolfgang Brütting,
Jens Pflaum
Abstract:
Multi-molecular excited states accompanied by an intra- and inter-molecular geometric relaxation are commonly encountered in optical and electrooptical studies and applications of organic semiconductors as, for example excimers or charge transfer states. Understanding the dynamics of these states is crucial to improve organic devices such as light emitting diodes and solar cells. Their full micros…
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Multi-molecular excited states accompanied by an intra- and inter-molecular geometric relaxation are commonly encountered in optical and electrooptical studies and applications of organic semiconductors as, for example excimers or charge transfer states. Understanding the dynamics of these states is crucial to improve organic devices such as light emitting diodes and solar cells. Their full microscopic description, however, demands for sophisticated tools such as ab-initio quantum chemical calculations which come at the expenses of high computational costs and are prone to errors by assumptions as well as iterative algorithmic procedures. Hence, the analysis of spectroscopic data is often conducted on a phenomenological level only. Here, we present a toolkit to analyze temperature dependent luminescence data and gain first insights into the relevant microscopic parameters of the molecular system at hand. By means of a Franck-Condon based approach considering a single effective inter-molecular vibrational mode and different potentials for the ground and excited state we are able to explain the luminescence spectra of such multi-molecular states. We demonstrate that by applying certain reasonable simplifications the luminescence of charge transfer states as well as excimers can be satisfactorily reproduced for temperatures ranging from cryogenics to above room temperature. We present a semi-classical and a quantum-mechanical description of our model and, for both cases, demonstrate its applicability by analyzing the temperature depended luminescence of the amorphous donor-acceptor heterojunction tetraphenyldibenzoperiflanthene:C$_{60}$ as well as polycrystalline zinc-phthalocyanine to reproduce the luminescence spectra and extract relevant system parameters such as the excimer binding energy.
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Submitted 3 July, 2022;
originally announced July 2022.
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Microscopic 3D printed optical tweezers for atomic quantum technology
Authors:
Pavel Ruchka,
Sina Hammer,
Marian Rockenhäuser,
Ralf Albrecht,
Johannes Drozella,
Simon Thiele,
Harald Giessen,
Tim Langen
Abstract:
Trapping of single ultracold atoms is an important tool for applications ranging from quantum computation and communication to sensing. However, most experimental setups, while very precise and versatile, can only be operated in specialized laboratory environments due to their large size, complexity and high cost. Here, we introduce a new trapping concept for ultracold atoms in optical tweezers ba…
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Trapping of single ultracold atoms is an important tool for applications ranging from quantum computation and communication to sensing. However, most experimental setups, while very precise and versatile, can only be operated in specialized laboratory environments due to their large size, complexity and high cost. Here, we introduce a new trapping concept for ultracold atoms in optical tweezers based on micrometer-scale lenses that are 3D printed onto the tip of standard optical fibers. The unique properties of these lenses make them suitable for both trapping individual atoms and capturing their fluorescence with high efficiency. In an exploratory experiment, we have established the vacuum compatibility and robustness of the structures, and successfully formed a magneto-optical trap for ultracold atoms in their immediate vicinity. This makes them promising components for portable atomic quantum devices.
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Submitted 22 June, 2022;
originally announced June 2022.
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Orbital-resolved Observation of Singlet Fission
Authors:
Alexander Neef,
Samuel Beaulieu,
Sebastian Hammer,
Shuo Dong,
Julian Maklar,
Tommaso Pincelli,
R. Patrick Xian,
Martin Wolf,
Laurenz Rettig,
Jens Pflaum,
Ralph Ernstorfer
Abstract:
Singlet fission may boost photovoltaic efficiency [by transforming a singlet exciton into two triplet excitons and thereby doubling the number of excited charge carriers. The primary step of singlet fission is the ultrafast creation of the correlated triplet pair. While several mechanisms have been proposed to explain this step, none has emerged as a consensus. The challenge lies in tracking the t…
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Singlet fission may boost photovoltaic efficiency [by transforming a singlet exciton into two triplet excitons and thereby doubling the number of excited charge carriers. The primary step of singlet fission is the ultrafast creation of the correlated triplet pair. While several mechanisms have been proposed to explain this step, none has emerged as a consensus. The challenge lies in tracking the transient excitonic states. Here we use time- and angle-resolved photoemission spectroscopy to observe the primary step of singlet fission in crystalline pentacene. Our results suggest a charge-transfer mediated mechanism with a hybridization of Frenkel and charge-transfer states in the lowest bright singlet exciton. We gained intimate knowledge about the localization and the orbital character of the exciton wave functions recorded in momentum maps. This allowed us to directly compare the localization of singlet and bitriplet excitons and decompose energetically overlapping states based on their orbital character. Orbital- and localization- resolved many-body dynamics promise deep insights into the mechanics governing molecular systems and topological materials.
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Submitted 28 February, 2023; v1 submitted 14 April, 2022;
originally announced April 2022.
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Nuclear dynamics of singlet exciton fission: a direct observation in pentacene single crystals
Authors:
Hélène Seiler,
Marcin Krynski,
Daniela Zahn,
Sebastian Hammer,
Yoav William Windsor,
Thomas Vasileiadis,
Jens Pflaum,
Ralph Ernstorfer,
Mariana Rossi,
Heinrich Schwoerer
Abstract:
Singlet exciton fission (SEF) is a key process in the development of efficient opto-electronic devices. An aspect that is rarely probed directly, and yet has a tremendous impact on SEF properties, is the nuclear structure and dynamics involved in this process. Here we directly observe the nuclear dynamics accompanying the SEF process in single crystal pentacene using femtosecond electron diffracti…
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Singlet exciton fission (SEF) is a key process in the development of efficient opto-electronic devices. An aspect that is rarely probed directly, and yet has a tremendous impact on SEF properties, is the nuclear structure and dynamics involved in this process. Here we directly observe the nuclear dynamics accompanying the SEF process in single crystal pentacene using femtosecond electron diffraction. The data reveal coherent atomic motions at 1 THz, incoherent motions, and an anisotropic lattice distortion representing the polaronic character of the triplet excitons. Combining molecular dynamics simulations, time-dependent density functional theory and experimental structure factor analysis, the coherent motions are identified as collective sliding motions of the pentacene molecules along their long axis. Such motions modify the excitonic coupling between adjacent molecules. Our findings reveal that long-range motions play a decisive part in the disintegration of the electronically correlated triplet pairs, and shed light on why SEF occurs on ultrafast timescales.
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Submitted 24 November, 2020;
originally announced November 2020.
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Scalable Transfer-Free Fabrication of MoS$_2$/SiO$_2$ Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
Authors:
Sebastian Hammer,
Hans-Moritz Mangold,
Ariana E. Nguyen,
Dominic Martinez-Ta,
Sahar Naghibi Alvillar,
Ludwig Bartels,
Hubert J. Krenner
Abstract:
We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS$_2$) - silicon dioxide (SiO$_2$) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS$_2$ photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS$_2$ simply by var…
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We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS$_2$) - silicon dioxide (SiO$_2$) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS$_2$ photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS$_2$ simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS$_2$ using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photon crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain simulations.
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Submitted 28 June, 2017;
originally announced June 2017.
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Effect of doping of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors
Authors:
Maria S. Hammer,
Carsten Deibel,
Jens Pflaum,
Vladimir Dyakonov
Abstract:
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al doping between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. el…
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Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al doping between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. electron mobility and morphology. With increasing doping level we observe on the one hand a decrease of the electron mobilities by two orders of magnitude,on the other hand doping enforces a morphological change of the zinc oxide layer which enables the infiltration of P3HT into the inorganic matrix. X-ray reflectivity (XRR) measurements confirm this significant change in the interface morphology for the various doping levels. We demonstrate that doping of ZnO is a tool to adjust the charge transport in ZnO/P3HT hybrids, using one single injecting metal (Au bottom contact) on a SiO2 dielectric. We observe an influence of the zinc oxide layer on the hole mobility in P3HT which we can modify via Al doping of ZnO. Hence, maximum hole mobility of 5e-4 cm^2/Vs in the hybrid system with 2 at.% Al doping. 5 at.% Al doping leads to a balanced mobility in the organic/inorganic hybrid system but also to a small on/off ratio due to high off-currents.
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Submitted 25 June, 2010;
originally announced June 2010.
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Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization
Authors:
Rebecca Winter,
Maria S Hammer,
Carsten Deibel,
Jens Pflaum
Abstract:
We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused…
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We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37meV (NL) and 104meV (PQ) below 190K, which are smaller than without functionalization, 117meV.
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Submitted 7 December, 2009;
originally announced December 2009.
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Effect of doping-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO
Authors:
Maria S Hammer,
Daniel Rauh,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the dop…
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Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping were compared to the accumulation of charge carriers in field effect transistor structures. This allowed to assess the scattering effects due to extrinsic doping on the electron mobility. The latter decreases from 4.6*10^-3 cm^2/Vs to 4.5*10^-4 cm^2/Vs with increasing doping density. In contrast, the accumulation leads to an increasing mobility up to 1.5*10^-2 cm^2/Vs. The potential barrier heights related to grain boundaries between the crystallites were derived from temperature dependent mobility measurements. The extrinsic doping initially leads to a grain boundary barrier height lowering, followed by an increase due to doping-induced structural defects. We conclude that the conductivity of sol--gel processed nanocrystalline ZnO:Al is governed by an interplay of the enhanced charge carrier density and the doping-induced charge carrier scattering effects, achieving a maximum at 0.8 at% in our case.
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Submitted 12 November, 2008;
originally announced November 2008.
