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Effect of doping of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors
Authors:
Maria S. Hammer,
Carsten Deibel,
Jens Pflaum,
Vladimir Dyakonov
Abstract:
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al doping between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. el…
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Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al doping between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. electron mobility and morphology. With increasing doping level we observe on the one hand a decrease of the electron mobilities by two orders of magnitude,on the other hand doping enforces a morphological change of the zinc oxide layer which enables the infiltration of P3HT into the inorganic matrix. X-ray reflectivity (XRR) measurements confirm this significant change in the interface morphology for the various doping levels. We demonstrate that doping of ZnO is a tool to adjust the charge transport in ZnO/P3HT hybrids, using one single injecting metal (Au bottom contact) on a SiO2 dielectric. We observe an influence of the zinc oxide layer on the hole mobility in P3HT which we can modify via Al doping of ZnO. Hence, maximum hole mobility of 5e-4 cm^2/Vs in the hybrid system with 2 at.% Al doping. 5 at.% Al doping leads to a balanced mobility in the organic/inorganic hybrid system but also to a small on/off ratio due to high off-currents.
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Submitted 25 June, 2010;
originally announced June 2010.
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Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization
Authors:
Rebecca Winter,
Maria S Hammer,
Carsten Deibel,
Jens Pflaum
Abstract:
We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused…
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We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37meV (NL) and 104meV (PQ) below 190K, which are smaller than without functionalization, 117meV.
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Submitted 7 December, 2009;
originally announced December 2009.
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Effect of doping-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO
Authors:
Maria S Hammer,
Daniel Rauh,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the dop…
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Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping were compared to the accumulation of charge carriers in field effect transistor structures. This allowed to assess the scattering effects due to extrinsic doping on the electron mobility. The latter decreases from 4.6*10^-3 cm^2/Vs to 4.5*10^-4 cm^2/Vs with increasing doping density. In contrast, the accumulation leads to an increasing mobility up to 1.5*10^-2 cm^2/Vs. The potential barrier heights related to grain boundaries between the crystallites were derived from temperature dependent mobility measurements. The extrinsic doping initially leads to a grain boundary barrier height lowering, followed by an increase due to doping-induced structural defects. We conclude that the conductivity of sol--gel processed nanocrystalline ZnO:Al is governed by an interplay of the enhanced charge carrier density and the doping-induced charge carrier scattering effects, achieving a maximum at 0.8 at% in our case.
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Submitted 12 November, 2008;
originally announced November 2008.
