Magnon spectroscopy in the electron microscope
Authors:
Demie Kepaptsoglou,
José Ángel Castellanos-Reyes,
Adam Kerrigan,
Júlio Alves Do Nascimento,
Paul M. Zeiger,
Khalil El Hajraoui,
Juan Carlos Idrobo,
Budhika G. Mendis,
Anders Bergman,
Vlado K. Lazarov,
Ján Rusz,
Quentin M. Ramasse
Abstract:
The miniaturisation of transistors is approaching its limits due to challenges in heat management and information transfer speed. To overcome these obstacles, emerging technologies such as spintronics are being developed, which leverage the electron's spin in addition to its charge. Local phenomena at interfaces or structural defects will greatly influence the efficiency of spin-based devices, mak…
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The miniaturisation of transistors is approaching its limits due to challenges in heat management and information transfer speed. To overcome these obstacles, emerging technologies such as spintronics are being developed, which leverage the electron's spin in addition to its charge. Local phenomena at interfaces or structural defects will greatly influence the efficiency of spin-based devices, making the ability to study and control spin wave propagation at the nano- and atomic scales a key challenge. The development of high-spatial-resolution tools to probe spin waves, also called magnons, at relevant lengthscales is thus essential to understand how their properties are affected by such local features. Here, we show the first experimental detection of bulk magnons at the nanoscale using scanning transmission electron microscopy. By employing high-resolution electron energy loss spectroscopy with hybrid-pixel direct electron detectors optimized for low acceleration voltages, we successfully overcome the challenges posed by weak signals and identify magnon excitations in a thin NiO nanocrystal. Advanced inelastic electron scattering simulations corroborate our findings. These results open new avenues for detecting magnons, exploring their dispersions and their modifications arising from nanoscale structural or chemical defects. This marks an important milestone in magnonics and presents exciting opportunities for the future development of spintronic devices.
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Submitted 10 April, 2025; v1 submitted 3 October, 2024;
originally announced October 2024.
Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
Authors:
Marcel S. Claro,
Juan P. Martínez-Pastor,
Alejandro Molina-Sánchez,
Khalil El Hajraoui,
Justyna Grzonka,
Hamid Pashaei Adl,
David Fuertes Marrón,
Paulo J. Ferreira,
Alex Bondarchuk,
Sascha Sadewasser
Abstract:
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devi…
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Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.
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Submitted 11 October, 2022; v1 submitted 13 June, 2022;
originally announced June 2022.
