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Controlled thinning and surface smoothening of silicon nanopillars
Authors:
S Kalem,
P Werner,
B Nilsson,
V G Talalaev,
M Hagberg,
O Arthursson,
U Sodervall
Abstract:
A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial ammonium silicon fluoride coating. The results show the formation of an oxide shell and a Silicon core without significantly changing the original length and shape o…
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A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial ammonium silicon fluoride coating. The results show the formation of an oxide shell and a Silicon core without significantly changing the original length and shape of the pillars. The oxide shell layer thickness can be controlled from few nanometers up to few hundred nanometers. While down sizing in diameter, smooth Si pillar surfaces of less than 10 nm roughness within 2 μm were produced after exposure to vapors of HF and HNO3 mixture as evidenced by transmission electron microscopy (TEM) analysis. The attempt to expose for long durations leads to the growth of a thick oxide whose strain effect on pillars can be assessed by coupled LO-TO vibrational modes of Si-O bonds. Photoluminescence (PL) on the pillar structures which have been down sized exhibit visible and infrared emissions, which are attributable to microscopic pillars and to the confinement of excited carriers in Si core, respectively. The formation of a smooth core-shell structures while reducing the diameter of the Si pillars has a potential in fabricating nanoscale electronic devices and functional components.
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Submitted 25 December, 2015;
originally announced December 2015.
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Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release
Authors:
Vikram Passi,
Ulf Sodervall,
Bengt Nilsson,
Goran Petersson,
Mats Hagberg,
Christophe Krzeminski,
Emmanuel Dubois,
Bert Du Bois,
Jean-Pierre Raskin
Abstract:
Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based…
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Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.
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Submitted 10 July, 2012;
originally announced July 2012.
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Black Silicon with high density and high aspect ratio nanowhiskers
Authors:
S Kalem,
P Werner,
Ö Arthursson,
V Talalaev,
B Nilsson,
M Hagberg,
H Frederiksen,
U Södervall
Abstract:
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters o…
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Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3 nm exhibits strong photoluminescence (PL) both in visible and infrared, which are interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicate that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of surface morphology of the nano whiskers.
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Submitted 16 May, 2011;
originally announced May 2011.
