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The impact of strain on the GeV-color center in diamond
Authors:
Thijs G. I. van Wijk,
E. Aylin Melan,
Rani Mary Joy,
Emerick Y. Guillaume,
Paulius Pobedinskas,
Ken Haenen,
Danny E. P. Vanpoucke
Abstract:
Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between th…
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Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between the two strain types: for hydrostatic tensile and compressive strain, red-and blue-shifted ZPL positions are expected, respectively, with a linear relation between the ZPL shift and the experienced stress. By calculating the ZPL shift for varying GeV$^0$ concentrations, a shift of $0.15$ nm/GPa ($0.38$ meV/GPa) is obtained at experimentally relevant concentrations using a hybrid functional. In contrast, only red-shifted ZPL are found for tensile and compressive linear strain along the $\langle100\rangle$ direction. The calculated ZPL shift exceeds that of hydrostatic strain by at least one order of magnitude, with a significant difference between tensile and compressive strains: $3.2$ and $4.8$ nm/GPa ($8.1$ and $11.7$ meV/GPa), respectively. In addition, a peak broadening is expected due to the lifted degeneracy of the GeV$^0$ $e_g$ state, calculated to be about $6$ meV/GPa. These calculated results are placed in perspective with experimental observations, showing values of ZPL shifts and splittings of comparable magnitude.
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Submitted 16 January, 2025; v1 submitted 18 December, 2024;
originally announced December 2024.
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First-principles investigation of hydrogen-related reactions on (100)--(2$\times$1)$:$H diamond surfaces
Authors:
Emerick Y. Guillaume,
Danny E. P. Vanpoucke,
Rozita Rouzbahani,
Luna Pratali Maffei,
Matteo Pelucchi,
Yoann Olivier,
Luc Henrard,
Ken Haenen
Abstract:
Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations -- density func…
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Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations -- density functional theory and climbing image nudged elastic band method -- transition states related to these mechanisms are identified and characterised. In addition, accurate reaction rates are computed using variational transition state theory. Together, these methods provide -- for a broad range of temperatures and hydrogen radical concentrations -- a picture of the relative likelihood of the migration or radical attack processes, along with a statistical description of the hydrogen coverage fraction of the (100) H-passivated surface, refining earlier results via a more thorough analysis of the processes at stake. Additionally, the migration of H-vacancy is shown to be anisotropic, and occurring preferentially across the dimer rows of the reconstructed surface. The approach used in this work can be generalised to other crystallographic orientations of diamond surfaces or other semiconductors.
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Submitted 20 February, 2024;
originally announced February 2024.
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Enhancement of concentration of XeV and GeV centers in nanocrystalline diamond through He+ irradiation
Authors:
T. Chakraborty,
K. J. Sankaran,
K. Srinivasu,
R. Nongjai,
K. Asokan,
C. H. Chen,
H. Niu,
K. Haenen
Abstract:
Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current techn…
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Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current technological challenges. Through this letter we report enhancing the concentration of Ge and Xe vacancy centers in nanocrystalline diamond (NCD) by means of He+ irradiation. We have demonstrated controlled growth of NCD by chemical vapor deposition (CVD) and implantation of Ge and Xe ions into the CVD-grown samples. NCDs were irradiated with He+ ions and characterized through optical spectroscopy measurements. Recorded photoluminescence results revealed a clear signature of enhancement of the Xe-related and Ge vacancies in NCDs.
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Submitted 23 March, 2021;
originally announced March 2021.
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Silicon-vacancy color centers in phosphorus-doped diamond
Authors:
Assegid Mengistu Flatae,
Stefano Lagomarsino,
Florian Sledz,
Navid Soltani,
Shannon S. Nicley,
Ken Haenen,
Robert Rechenberg,
Michael F. Becker,
Silvio Sciortino,
Nicla Gelli,
Lorenzo Giuntini,
Francesco Taccetti,
Mario Agio
Abstract:
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu…
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
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Submitted 19 December, 2019;
originally announced December 2019.
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Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study
Authors:
Danny E. P. Vanpoucke,
Shannon S. Nicley,
Jorne Raymakers,
Wouter Maes,
Ken Haenen
Abstract:
The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 ele…
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The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background luminescence.
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Submitted 23 April, 2019;
originally announced April 2019.
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Exploring possibilities of band gap measurement with off-axis EELS in TEM
Authors:
Svetlana Korneychuk,
Bart Partoens,
Giulio Guzzinati,
Rajesh Ramaneti,
Joff Derluyn,
Ken Haenen,
Jo Verbeeck
Abstract:
A technique to measure the band gap of dielectric materials with high refractive index by means of energy electron loss spectroscopy (EELS) is presented. The technique relies on the use of a circular (Bessel) aperture and suppresses Cherenkov losses and surface-guided light modes by enforcing a momentum transfer selection. The technique also strongly suppresses the elastic zero loss peak, making t…
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A technique to measure the band gap of dielectric materials with high refractive index by means of energy electron loss spectroscopy (EELS) is presented. The technique relies on the use of a circular (Bessel) aperture and suppresses Cherenkov losses and surface-guided light modes by enforcing a momentum transfer selection. The technique also strongly suppresses the elastic zero loss peak, making the acquisition, interpretation and signal to noise ratio of low loss spectra considerably better, especially for excitations in the first few eV of the EELS spectrum. Simulations of the low loss inelastic electron scattering probabilities demonstrate the beneficial influence of the Bessel aperture in this setup even for high accelerating voltages. The importance of selecting the optimal experimental convergence and collection angles is highlighted. The effect of the created off-axis acquisition conditions on the selection of the transitions from valence to conduction bands is discussed in detail on a simplified isotropic two band model. This opens the opportunity for deliberately selecting certain transitions by carefully tuning the microscope parameters. The suggested approach is experimentally demonstrated and provides good signal to noise ratio and interpretable band gap signals on reference samples of diamond, GaN and AlN while offering spatial resolution in the nm range.
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Submitted 29 April, 2019; v1 submitted 17 October, 2017;
originally announced October 2017.
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Pick-up and drop transfer of diamond nanosheets
Authors:
V. Seshan,
J. O. Island,
R. van Leeuwen,
W. J. Venstra,
B. H. Schneider,
S. D. Janssens,
K. Haenen,
E. J. R. Sudhölter,
L. C. P. M. de Smet,
H. S. J. van der Zant,
G. A. Steele,
A. Castellanos-Gomez
Abstract:
Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another s…
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Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another substrate. As a proof of concept, electronic devices and mechanical resonators are fabricated and their properties are characterized. In addition, the versatility of the method is further explored by transferring NCD nanosheets onto an optical fibre, which allows measuring its optical absorption. Finally, we show that NCD nanosheets can also be transferred onto 2D crystals, such as MoS2, to fabricate heterostructures. Pick-up and drop transfer enables the fabrication of a variety of NCD-based devices without requiring lithography or wet processing.
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Submitted 10 March, 2015;
originally announced March 2015.
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Current-induced nanogap formation and graphitization in boron-doped diamond films
Authors:
V. Seshan,
C. R. Arroyo,
A. Castellanos-Gomez,
F. Prins,
M. L. Perrin,
S. D. Janssens,
K. Haenen,
M. Nesládek,
E. J. R. Sudhölter,
L. C. P. M. de Smet,
H. S. J. van der Zant,
D. Dulic
Abstract:
A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the el…
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A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation.
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Submitted 10 December, 2012;
originally announced December 2012.
