Skip to main content

Showing 1–8 of 8 results for author: Haenen, K

Searching in archive cond-mat. Search in all archives.
.
  1. arXiv:2412.14321  [pdf, other

    cond-mat.mtrl-sci physics.comp-ph

    The impact of strain on the GeV-color center in diamond

    Authors: Thijs G. I. van Wijk, E. Aylin Melan, Rani Mary Joy, Emerick Y. Guillaume, Paulius Pobedinskas, Ken Haenen, Danny E. P. Vanpoucke

    Abstract: Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between th… ▽ More

    Submitted 16 January, 2025; v1 submitted 18 December, 2024; originally announced December 2024.

    Comments: 13 pages, 6 figures, 1 table

    Journal ref: Carbon 234, 119928 (2025)

  2. First-principles investigation of hydrogen-related reactions on (100)--(2$\times$1)$:$H diamond surfaces

    Authors: Emerick Y. Guillaume, Danny E. P. Vanpoucke, Rozita Rouzbahani, Luna Pratali Maffei, Matteo Pelucchi, Yoann Olivier, Luc Henrard, Ken Haenen

    Abstract: Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations -- density func… ▽ More

    Submitted 20 February, 2024; originally announced February 2024.

  3. arXiv:2103.12800  [pdf, other

    cond-mat.mtrl-sci physics.app-ph physics.optics quant-ph

    Enhancement of concentration of XeV and GeV centers in nanocrystalline diamond through He+ irradiation

    Authors: T. Chakraborty, K. J. Sankaran, K. Srinivasu, R. Nongjai, K. Asokan, C. H. Chen, H. Niu, K. Haenen

    Abstract: Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current techn… ▽ More

    Submitted 23 March, 2021; originally announced March 2021.

    Comments: 5 pages, 4 figures

  4. arXiv:1912.09352  [pdf

    physics.app-ph cond-mat.mtrl-sci quant-ph

    Silicon-vacancy color centers in phosphorus-doped diamond

    Authors: Assegid Mengistu Flatae, Stefano Lagomarsino, Florian Sledz, Navid Soltani, Shannon S. Nicley, Ken Haenen, Robert Rechenberg, Michael F. Becker, Silvio Sciortino, Nicla Gelli, Lorenzo Giuntini, Francesco Taccetti, Mario Agio

    Abstract: The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu… ▽ More

    Submitted 19 December, 2019; originally announced December 2019.

    Journal ref: Diam. Relat. Mater. 105, 107797 (2020)

  5. Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study

    Authors: Danny E. P. Vanpoucke, Shannon S. Nicley, Jorne Raymakers, Wouter Maes, Ken Haenen

    Abstract: The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 ele… ▽ More

    Submitted 23 April, 2019; originally announced April 2019.

    Comments: 12 pages, 7 figures, 5 tables

    Journal ref: Diamond and Related Materials 94, 233-241 (2019)

  6. arXiv:1710.06173  [pdf

    cond-mat.mtrl-sci physics.optics

    Exploring possibilities of band gap measurement with off-axis EELS in TEM

    Authors: Svetlana Korneychuk, Bart Partoens, Giulio Guzzinati, Rajesh Ramaneti, Joff Derluyn, Ken Haenen, Jo Verbeeck

    Abstract: A technique to measure the band gap of dielectric materials with high refractive index by means of energy electron loss spectroscopy (EELS) is presented. The technique relies on the use of a circular (Bessel) aperture and suppresses Cherenkov losses and surface-guided light modes by enforcing a momentum transfer selection. The technique also strongly suppresses the elastic zero loss peak, making t… ▽ More

    Submitted 29 April, 2019; v1 submitted 17 October, 2017; originally announced October 2017.

    Comments: 17 pages, 6 figures

    Journal ref: Ultramicroscopy, Volume 189, June 2018, Pages 76-84

  7. arXiv:1503.02844  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Pick-up and drop transfer of diamond nanosheets

    Authors: V. Seshan, J. O. Island, R. van Leeuwen, W. J. Venstra, B. H. Schneider, S. D. Janssens, K. Haenen, E. J. R. Sudhölter, L. C. P. M. de Smet, H. S. J. van der Zant, G. A. Steele, A. Castellanos-Gomez

    Abstract: Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another s… ▽ More

    Submitted 10 March, 2015; originally announced March 2015.

    Comments: 15 pages, 6 figures

    Journal ref: Nanotechnology 26 (2015) 125706

  8. arXiv:1212.2235  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Current-induced nanogap formation and graphitization in boron-doped diamond films

    Authors: V. Seshan, C. R. Arroyo, A. Castellanos-Gomez, F. Prins, M. L. Perrin, S. D. Janssens, K. Haenen, M. Nesládek, E. J. R. Sudhölter, L. C. P. M. de Smet, H. S. J. van der Zant, D. Dulic

    Abstract: A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the el… ▽ More

    Submitted 10 December, 2012; originally announced December 2012.

    Comments: 14 pages 4 figures + 1 supplemental figure

    Journal ref: Appl. Phys. Lett. 101, 193106 (2012)