Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane
Authors:
Joon Young Park,
Young Jae Shin,
Jeacheol Shin,
Jehyun Kim,
Janghyun Jo,
Hyobin Yoo,
Danial Haei,
Chohee Hyun,
Jiyoung Yun,
Robert M. Huber,
Arijit Gupta,
Kenji Watanabe,
Takashi Taniguchi,
Wan Kyu Park,
Hyeon Suk Shin,
Miyoung Kim,
Dohun Kim,
Gyu-Chul Yi,
Philip Kim
Abstract:
Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materi…
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Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface.
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Submitted 30 May, 2024;
originally announced May 2024.
